Renesas HZU7.5B2JTRF-E

Overview

HZU7.5B2JTRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications, with a nominal Zener voltage of 7.5 V, dynamic resistance of 400 Ω at 5 mA, and ultra-low noise voltage (≈1/3–1/10 that of standard HZU series). It operates within −55°C to +150°C storage range and dissipates up to 150 mW in its URP surface-mount package.

For engineers reviewing the HZU7.5B2JTRF-E datasheet, HZU7.5B2JTRF-E pinout, HZU7.5B2JTRF-E application, or HZU7.5B2JTRF-E equivalent, key selection criteria include Zener voltage tolerance (±5%), low temperature coefficient (−2.0 mV/°C), semi-logarithmic V_Z–I_Z linearity from 1 nA to 1 mA, and suitability for precision analog reference and low-drift biasing circuits.

Technical Context

The HZU7.5B2JTRF-E implements a hard-knee Zener breakdown mechanism with epitaxial planar construction to minimize noise and improve knee sharpness. Its V_Z–I_Z characteristic exhibits semi-logarithmic linearity across six decades of current (1 nA–1 mA), enabling stable operation under micro-power bias conditions.

Designed for low-drift reference generation, it achieves a temperature coefficient of −2.0 mV/°C (≈1/2 that of the legacy HZU series) and maintains tight Zener voltage tolerance (7.13–7.88 V at I_ZT = 5 mA), supporting high-accuracy analog signal conditioning in industrial and test equipment.

Key Specifications

Pinout & Package

Package: Ultra Small Resin Package (URP), JEITA code PTSP0002ZA-A, Renesas code SC-76A, mass ≈ 0.004 g. Surface-mount compatible with 0.8 mm × 1.55 mm footprint and 0.45 mm max height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with MMBZ5236BS-7-F and BZX84-C7V5, the HZU7.5B2JTRF-E delivers superior low-noise performance, tighter thermal stability, and verified semi-logarithmic behavior down to 1 nA - making it uniquely suitable for precision analog reference and micro-power sensor biasing where those parameters are design-critical.

Availability

HZU7.5B2JTRF-E is available at Aetrix Electronics and suitable for high-precision voltage reference, low-noise analog front-end biasing, and micro-power sensor excitation requiring stable component supply across industrial, test & measurement, and medical electronics programs.

Supply support for HZU7.5B2JTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog & power devices, and advanced SoCs for industrial, automotive, and infrastructure applications.

The HZU-LL Series was developed specifically for low-noise, hard-knee Zener reference applications demanding high stability, ultra-low leakage, and predictable V_Z–I_Z behavior across extreme current ranges - targeting precision instrumentation and metrology systems.

FAQ

What is the Zener voltage tolerance of the HZU7.5B2JTRF-E?

The HZU7.5B2JTRF-E has a Zener voltage tolerance of ±5%, specified as 7.13 V minimum to 7.88 V maximum at test current I_ZT = 5 mA. This tight tolerance ensures consistent reference accuracy across production lots and supports high-precision applications such as calibrated test equipment and industrial sensor signal chains where absolute voltage stability is critical. The HZU7.5B2JTRF-E achieves this via epitaxial planar process control and laser trimming during manufacturing.

Does the HZU7.5B2JTRF-E support operation at very low currents?

Yes, the HZU7.5B2JTRF-E exhibits semi-logarithmic V_Z–I_Z linearity from 1 nA to 1 mA, confirmed in Renesas' characterization data. This enables stable regulation and predictable voltage output even at nanoampere bias levels - ideal for ultra-low-power sensor excitation, battery monitoring, and energy-harvesting systems. The HZU7.5B2JTRF-E's behavior in this range is explicitly validated, unlike generic Zeners which typically specify only at ≥1 mA.

What is the temperature coefficient of the HZU7.5B2JTRF-E, and how does it compare to standard Zeners?

The HZU7.5B2JTRF-E has a temperature coefficient of −2.0 mV/°C, approximately half that of the legacy HZU series and significantly lower than typical 7.5 V Zeners (e.g., −3.5 mV/°C for BZX84-C7V5). This reduced drift directly translates to <±1.5 mV total change over 0–70°C ambient, enhancing long-term stability in unregulated environments. The HZU7.5B2JTRF-E achieves this via optimized epitaxial layer doping and junction geometry.

Is the HZU7.5B2JTRF-E suitable for low-noise applications?

Yes - the HZU7.5B2JTRF-E is explicitly characterized for low-noise operation, with noise voltage approximately 1/3 to 1/10 that of the standard HZU series. This makes it appropriate for precision analog front-ends, high-resolution ADC/DAC references, and medical-grade amplifiers where added noise degrades signal integrity. The HZU7.5B2JTRF-E's low-noise performance stems from its hard-knee epitaxial planar structure and optimized junction design.

What package type does the HZU7.5B2JTRF-E use, and what are its mounting considerations?

The HZU7.5B2JTRF-E uses the Ultra Small Resin Package (URP), JEITA code PTSP0002ZA-A (SC-76A), with dimensions 0.8 mm × 1.55 mm and max height 0.45 mm. It is a two-terminal surface-mount device with cathode marked on terminal 1. PCB layout must minimize thermal coupling and parasitic inductance - especially critical for low-noise applications - and follow Renesas' recommended pad pattern (1.10 mm × 0.75 mm lands with 0.8 mm pitch).