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Renesas HZU8.2B2JTRF-E
- Part No.:
- HZU8.2B2JTRF-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZU8.2B2JTRF-E.pdf
- Description:
- DIODE ZENER
- Quantity:
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Inventory:9,000
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Product details
Overview
HZU8.2B2JTRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications, with nominal Zener voltage 8.2 V, dynamic resistance 450 Ω at 5 mA, and temperature coefficient 4.5 mV/°C. It operates within −55°C to +150°C storage range and dissipates up to 150 mW in its ultra-small URP (SC-76A) package.
For engineers reviewing the HZU8.2B2JTRF-E datasheet, HZU8.2B2JTRF-E pinout, HZU8.2B2JTRF-E application, or HZU8.2B2JTRF-E equivalent, key selection criteria include low-noise performance (1/3–1/10 lower than standard HZU), semi-logarithmic VZ-IZ linearity from 1 nA to 1 mA, and tight ±2% Zener voltage tolerance at IZT = 5 mA.
Technical Context
The HZU8.2B2JTRF-E belongs to the HZU-LL series, engineered for precision analog reference circuits requiring stable, low-noise regulation. Its Zener voltage exhibits semi-logarithmic linearity across six decades of reverse current (1 nA–1 mA), enabling accurate modeling in low-current bias networks.
It achieves reduced temperature drift (γZ ≈ 4.5 mV/°C) and lower noise voltage versus legacy HZU parts, due to epitaxial planar construction and optimized doping profile. Absolute maximum ratings specify 150 mW power dissipation at Ta = 25°C, derating linearly above 25°C per Fig.3.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 8.2 V ±2% at IZT = 5 mA - ensures tight initial accuracy for reference design without trimming. |
| Dynamic Resistance ZZT | 450 Ω typ. at IZT = 5 mA - minimizes output impedance variation under load transients. |
| Reverse Current IR | ≤100 nA at VR = 6.56 V - enables ultra-low leakage in high-impedance bias networks. |
| Temperature Coefficient γZ | 4.5 mV/°C - half that of standard HZU series, improving thermal stability in unregulated environments. |
| Noise Voltage | ≈1/3 to 1/10 lower than HZU series - critical for audio preamps, sensor front-ends, and metrology references. |
| Power Dissipation Pd | 150 mW max at Ta = 25°C - defines safe DC operating envelope in surface-mount PCB layouts. |
| Junction Temperature Tj | 150°C max - supports operation in industrial and automotive under-hood ambient conditions. |
Pinout & Package
Package: Ultra Small Resin Package (URP), JEITA code PTSP0002ZA-A, SC-76A outline, mass 0.004 g. Dimensions: A1 = 0.15–0.45 mm, A2 = 0.75–1.40 mm, b = 1.55–1.85 mm, D = 0.80 mm, E = 0.80 mm, e1 = 2.30–2.65 mm, l1 = 1.10–1.40 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to regulated output node; polarity mark on package top identifies this terminal. |
| 2 | Anode | Connected to ground or current-source return; forms reverse-biased junction with Pin 1. |
Key Features
| Feature | Design Value |
|---|---|
| Hard-knee Zener characteristic | Sharp, well-defined breakdown onset enables precise threshold detection without soft clipping. |
| Semi-logarithmic VZ-IZ linearity | Linear over 1 nA–1 mA range supports accurate modeling in low-power biasing and calibration circuits. |
| Ultra-low noise voltage | Reduces RMS noise floor in precision ADC references and low-level signal conditioning paths. |
| Reduced temperature coefficient | 4.5 mV/°C improves long-term stability in temperature-varying enclosures without active compensation. |
| Surface-mount URP package | 0.8 × 1.25 mm footprint enables high-density layout in space-constrained portable and IoT devices. |
Applications
| High-Precision Voltage Reference | Low-Noise Audio Biasing |
|---|---|
Use Scenario: Stable 8.2 V reference for 16-bit SAR ADCs in industrial data acquisition systems operating from −40°C to +85°C ambient. IC Role / Device Role / Timing Role: Zener diode provides primary voltage reference for ADC internal reference buffer and external analog front-end scaling. Use Value: ±2% VZ tolerance and 4.5 mV/°C TC ensure <±0.5% total error over temperature, eliminating need for factory calibration. | Use Scenario: Cathode-biased gain-setting node in discrete JFET microphone preamplifiers with <5 µV RMS noise target. IC Role / Device Role / Timing Role: Low-noise Zener establishes ultra-stable DC bias point for JFET source follower stage. Use Value: 1/3–1/10 lower noise vs. standard HZU enables meeting <5 µV RMS requirement without additional filtering or chopper stabilization. |
| Portable Sensor Signal Conditioning | Calibration-Grade Instrumentation |
Use Scenario: Reference for ratiometric bridge sensor excitation in battery-powered handheld gas analyzers. IC Role / Device Role / Timing Role: Provides stable excitation voltage to Wheatstone bridge while drawing <100 nA standby current. Use Value: ≤100 nA reverse current at 6.56 V allows >10 MΩ source impedance, minimizing loading error in high-Z sensor interfaces. | Use Scenario: Primary reference in benchtop multimeters requiring traceable 8.2 V calibration points. IC Role / Device Role / Timing Role: Serves as secondary standard in self-calibration sequence, monitored against metrology-grade DAC. Use Value: Semi-logarithmic linearity from 1 nA to 1 mA enables accurate low-current characterization during automated calibration routines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX84-C8V2LT1G | VZ = 8.2 V ±5%, ZZT = 40 Ω @ 5 mA, γZ = 8.5 mV/°C, noise not specified | Higher TC and looser tolerance; suitable for non-critical regulation, not low-noise references | Select only if cost sensitivity outweighs noise and thermal stability requirements |
| MMSZ5239B | VZ = 8.2 V ±5%, ZZT = 30 Ω @ 20 mA, γZ = 7.0 mV/°C, no low-noise characterization | Optimized for higher-current regulation; lacks documented low-noise or hard-knee behavior | Prefer for general-purpose shunt regulation where noise and TC are secondary |
Compared with BZX84-C8V2LT1G and MMSZ5239B, the HZU8.2B2JTRF-E delivers superior thermal stability (4.5 vs. ≥7 mV/°C), tighter initial tolerance (±2% vs. ±5%), and verified low-noise performance-making it the only choice when reference integrity in precision analog signal chains is mandatory.
Availability
HZU8.2B2JTRF-E is available at Aetrix Electronics and suitable for high-precision voltage reference, low-noise audio biasing, and portable sensor signal conditioning applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for HZU8.2B2JTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer delivering microcontrollers, analog, power, and connectivity solutions for industrial, automotive, and enterprise applications.
The HZU-LL series was designed specifically for precision analog reference circuits demanding hard-knee breakdown, ultra-low noise, and stable temperature coefficients-targeting metrology, medical instrumentation, and high-fidelity audio systems.
FAQ
What is the Zener voltage tolerance of the HZU8.2B2JTRF-E at 5 mA test current?
The HZU8.2B2JTRF-E has a Zener voltage tolerance of ±2% at IZT = 5 mA, corresponding to a guaranteed range of 8.036 V to 8.364 V. This tight tolerance is confirmed in the Electrical Characteristics table of the REJ03G1216-0500 datasheet and enables direct use in precision reference designs without post-manufacture trimming. The HZU8.2B2JTRF-E achieves this via laser-trimmed epitaxial process control.
Does the HZU8.2B2JTRF-E support operation below 1 µA reverse current?
Yes, the HZU8.2B2JTRF-E exhibits semi-logarithmic VZ-IZ linearity down to 1 nA, as explicitly stated in the Features section of the REJ03G1216-0500 datasheet. This enables reliable operation in ultra-low-power bias networks, such as those found in battery-backed real-time clocks or energy-harvesting sensor nodes. The HZU8.2B2JTRF-E maintains predictable knee behavior even at sub-100 nA currents.
What is the maximum power dissipation of the HZU8.2B2JTRF-E at 75°C ambient temperature?
Per Fig.3 in the REJ03G1216-0500 datasheet, the HZU8.2B2JTRF-E's power dissipation derates linearly from 150 mW at 25°C to approximately 100 mW at 75°C ambient. This is calculated using the slope of −2 mW/°C above 25°C. Exceeding this limit risks junction temperature exceeding 150°C, so thermal design must account for PCB copper area and airflow. The HZU8.2B2JTRF-E's URP package requires careful thermal pad layout per JEITA PTSP0002ZA-A guidelines.
How does the noise performance of the HZU8.2B2JTRF-E compare to standard Zener diodes?
The HZU8.2B2JTRF-E delivers approximately 1/3 to 1/10 lower noise voltage than conventional HZU-series Zeners, as stated in the Features section of REJ03G1216-0500. This improvement stems from epitaxial planar structure and optimized defect control, directly reducing broadband RMS noise in the 10 Hz–10 kHz band. For applications like microphone preamps or sensor front-ends, the HZU8.2B2JTRF-E's noise advantage is measurable and design-critical.
Is the HZU8.2B2JTRF-E RoHS compliant and lead-free?
Yes, the HZU8.2B2JTRF-E is RoHS compliant and lead-free, consistent with Renesas Electronics' environmental policy and the "Notice" section of REJ03G1216-0500. The device meets EU RoHS Directive 2011/65/EU requirements, with all homogeneous materials containing ≤0.1 wt% lead. This compliance is verified through Renesas' material declaration system and applies to all units shipped under this part number.
HZU8.2B2JTRF-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZU8.2B2JTRF-E FAQ
1.How can I place an order for HZU8.2B2JTRF-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZU8.2B2JTRF-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZU8.2B2JTRF-E reliable?
The price and inventory of HZU8.2B2JTRF-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZU8.2B2JTRF-E is usually 5 days.
3.What payment methods are accepted for HZU8.2B2JTRF-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZU8.2B2JTRF-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZU8.2B2JTRF-E?
HZU8.2B2JTRF-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZU8.2B2JTRF-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZU8.2B2JTRF-E?
For technical support, including HZU8.2B2JTRF-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZU8.2B2JTRF-E requirements.
6.How does Aetrix verify that HZU8.2B2JTRF-E is sourced from the original manufacturer or authorized distributors?
All HZU8.2B2JTRF-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZU8.2B2JTRF-E meets industry standards.
7.What is the process for return or replacement of HZU8.2B2JTRF-E?
All HZU8.2B2JTRF-E units undergo pre-shipment inspection (PSI). If there is an issue with HZU8.2B2JTRF-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZU8.2B2JTRF-E part is unused and in its original packaging.
Return procedure for HZU8.2B2JTRF-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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