Renesas HZU8.2B3TRF-E

Overview

HZU8.2B3TRF-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, with a nominal Zener voltage of 8.28 V to 8.64 V at 5 mA, dynamic resistance of 30 Ω, and power dissipation rating of 200 mW in an ultra-small URP surface-mount package.

For engineers reviewing the HZU8.2B3TRF-E datasheet, HZU8.2B3TRF-E pinout, HZU8.2B3TRF-E application, or HZU8.2B3TRF-E equivalent, this device serves as a compact, grade-B3 tolerance voltage reference for power supply regulation, sensor biasing, and overvoltage protection where tight V_Z control and low rd are required.

Technical Context

The HZU8.2B3TRF-E operates as a two-terminal reverse-biased junction device, delivering stable breakdown voltage under controlled test conditions (I_Z = 5 mA, pulse width = 40 ms). Its planar construction ensures reproducible Zener characteristics and low temperature coefficient near zero crossing (~±0.02 %/°C per Fig.2).

It is rated for junction temperatures up to 150°C and storage from –55°C to +150°C, with thermal derating defined in Fig.3. The URP package enables high-density PCB layout while maintaining adequate thermal path for 200 mW operation at 25°C ambient.

Key Specifications

Pinout & Package

URP (Ultra Small Resin Package) is a 2-pin SC-76A molded plastic surface-mount package with cathode marking on top surface. Dimensions: 0.8 mm × 0.8 mm body, 0.45 mm height, 0.65 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C8V2LT1G and MMSZ5236BT1G, the HZU8.2B3TRF-E offers superior V_Z tolerance (±2.2% vs. ±5%) and smaller URP footprint-critical for wearables and miniaturized sensor nodes-while trading off absolute power headroom for tighter regulation and thermal efficiency at low current.

Availability

HZU8.2B3TRF-E is available at Aetrix Electronics and suitable for precision voltage reference, sensor excitation, overvoltage protection, and signal level translation requiring stable component supply and consistent grade-B3 Zener performance.

Supply support for HZU8.2B3TRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and consumer applications.

The HZU Series is part of Renesas' discrete Zener portfolio, engineered for high-precision, low-power voltage stabilization in space-constrained surface-mount designs where tight V_Z tolerance and low dynamic resistance are essential.

FAQ

What is the Zener voltage range for HZU8.2B3TRF-E at 5 mA test current?

The HZU8.2B3TRF-E has a specified Zener voltage range of 8.28 V to 8.64 V when tested at I_Z = 5 mA, corresponding to its B3 grade tolerance band. This range is verified per Renesas Preliminary Datasheet R07DS0423EJ1000 Rev.10.00, Page 3, and reflects guaranteed performance across production lots without binning or selection.

Does HZU8.2B3TRF-E support continuous DC operation at its full 200 mW rating?

No-HZU8.2B3TRF-E's 200 mW power dissipation rating applies only at T_a = 25°C ambient. Derating is required above that temperature per Fig.3 in the datasheet, reaching zero allowable dissipation at ~125°C ambient. For continuous DC use, thermal design must ensure junction temperature remains ≤150°C, typically limiting sustained power to <100 mW in enclosed environments.

What is the reverse leakage current specification for HZU8.2B3TRF-E?

HZU8.2B3TRF-E guarantees reverse current I_R ≤ 2 μA when biased at V_R = 5.0 V, as stated in the Electrical Characteristics table on Page 3 of the datasheet. This low leakage supports accurate biasing in high-impedance sensor and reference circuits where current draw must remain sub-microampere.

Is HZU8.2B3TRF-E RoHS compliant and halogen-free?

Yes-HZU8.2B3TRF-E meets RoHS Directive 2011/65/EU requirements and is halogen-free per Renesas' environmental compliance documentation. The device uses lead-free matte tin terminal plating and complies with JEDEC J-STD-609A Class 1 definition for halogen content (<900 ppm Br, <900 ppm Cl, total halogens <1500 ppm).

How does the URP package of HZU8.2B3TRF-E compare to standard SOD-323 in size and thermal performance?

The URP package of HZU8.2B3TRF-E measures 0.8 mm × 0.8 mm × 0.45 mm, approximately 40% smaller in footprint than SOD-323 (1.7 mm × 1.25 mm). While its thermal resistance is higher due to reduced copper pad area, the 200 mW rating is validated for typical reflow-soldered land patterns per Renesas Package Dimensions drawing on Page 6, making it viable for low-power, high-density applications where space is prioritized over extreme thermal headroom.