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Renesas HZU9C3LTRF-E
- Part No.:
- HZU9C3LTRF-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZU9C3LTRF-E.pdf
- Description:
- DIODE ZENER
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Product details
Overview
HZU9C3LTRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications. It delivers a nominal Zener voltage of 3.1 V to 3.5 V at 0.5 mA, exhibits ultra-low noise voltage (~1/3–1/10 that of standard HZU series), and features a temperature coefficient of approximately −0.02 mV/°C - half that of the HZU series. Its semi-logarithmic linear VZ–IZ characteristic (1 nA to 1 mA) supports precision biasing in analog sensor interfaces.
For engineers reviewing the HZU9C3LTRF-E datasheet, HZU9C3LTRF-E pinout, HZU9C3LTRF-E application, or HZU9C3LTRF-E equivalent, key selection criteria include its ultra-low noise performance, tight 3.1–3.5 V Zener tolerance at 0.5 mA, URP surface-mount package compatibility, and verified linearity down to 1 nA reverse current - critical for low-power reference and calibration circuits.
Technical Context
The HZU9C3LTRF-E belongs to the HZU-LL Series, engineered specifically to reduce both voltage noise and temperature drift relative to legacy HZU diodes. Its Zener voltage is specified with ±0.2 V tolerance at IZ = 0.5 mA, and dynamic resistance is typ. 360 Ω at IZT = 0.5 mA, enabling stable regulation under light-load conditions.
It operates within a junction temperature range of −55°C to +150°C and is rated for 150 mW power dissipation at Ta = 25°C, derating linearly above 25°C per Fig.3. The device uses a silicon epitaxial planar structure with hard-knee breakdown characteristics, ensuring predictable turn-on behavior without soft saturation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 3.1 V min to 3.5 V max at IZ = 0.5 mA - defines precise low-voltage reference window for sensor biasing and ADC reference scaling. |
| Reverse Current (IR) | ≤100 nA at VR = 1.0 V - ensures minimal leakage in high-impedance reference nodes. |
| Dynamic Resistance (ZZT) | Typ. 360 Ω at IZT = 0.5 mA - maintains voltage stability against small load variations in precision analog circuits. |
| Temperature Coefficient (γZ) | ≈−0.02 mV/°C - reduces thermal drift by ~50% vs. HZU series, improving long-term reference accuracy over temperature. |
| Noise Voltage | ~1/3 to 1/10 of standard HZU series - directly lowers RMS noise floor in low-noise amplifiers and precision instrumentation front-ends. |
| Power Dissipation (Pd) | 150 mW at Ta = 25°C - supports operation in compact SMT layouts without forced cooling. |
Pinout & Package
Package: Ultra Small Resin Package (URP), JEITA code PTSP0002ZA-A, Renesas code SC-76A, mass typ. 0.004 g. Dimensions: 1.10 × 0.80 × 0.45 mm (L × W × H), compatible with standard 0402 footprint reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to higher-potential node; reverse-biased terminal where Zener breakdown occurs - marked with cathode band on package top surface. |
| 2 | Anode | Connected to lower-potential node (typically ground or common return); completes bias path for controlled Zener conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Hard-knee Zener breakdown | Sharp, well-defined turn-on at VZ with minimal knee curvature - enables accurate threshold detection and stable clamping without soft saturation artifacts. |
| Semi-logarithmic VZ–IZ linearity | Linear over 6 decades (1 nA to 1 mA) - supports reliable operation across ultra-low-current biasing (e.g., micropower sensors) and moderate-current reference buffering. |
| Ultra-low noise voltage | Reduction to 10–33% of HZU-series noise - directly improves signal-to-noise ratio in precision op-amp references and low-level signal conditioning stages. |
| Reduced temperature coefficient | ≈−0.02 mV/°C - cuts thermal drift contribution by half versus HZU, easing compensation requirements in wide-temperature industrial environments. |
Applications
| High-Precision Sensor Biasing | Low-Noise ADC Reference |
|---|---|
Use Scenario: Providing stable excitation voltage to resistive bridge sensors (e.g., strain gauges, RTDs) in industrial process monitoring systems operating from −40°C to +85°C. IC Role / Device Role / Timing Role: Low-drift, low-noise Zener reference source replacing larger, noisier alternatives in front-end analog signal chains. Use Value: Enables sub-0.1% full-scale measurement accuracy by minimizing thermal and noise-induced reference error - critical for Class 0.1 pressure transducers. | Use Scenario: Supplying reference voltage to 16-bit SAR ADCs in portable medical instrumentation (e.g., ECG front-ends) where supply headroom is limited to 3.3 V. IC Role / Device Role / Timing Role: Precision 3.3 V-compatible reference diode delivering stable VREF with <1 µVRMS broadband noise contribution. Use Value: Preserves effective number of bits (ENOB) by limiting reference noise to <0.5 LSB - directly supporting 16-bit resolution at 100 kSPS sampling. |
| Micropower Calibration Reference | Low-Voltage Clamp Protection |
Use Scenario: Serving as a factory-trimmable voltage reference in battery-powered IoT node MCUs requiring <1 µA quiescent current during sleep mode. IC Role / Device Role / Timing Role: Ultra-low-leakage Zener element used in self-calibration routines to verify internal bandgap reference stability over time. Use Value: Maintains ≤100 nA reverse leakage at 1.0 V - allows calibration circuitry to remain active for >10 years on a single CR2032 cell. | Use Scenario: Protecting input pins of low-voltage logic ICs (e.g., 3.3 V GPIO) from transient overvoltage events in automotive body-control modules. IC Role / Device Role / Timing Role: Fast-response, hard-knee clamp diode shunting ESD pulses above 3.5 V while presenting negligible capacitance (<0.8 pF). Use Value: Limits clamped voltage to ≤3.5 V with <1 ns response - prevents latch-up in 3.3 V CMOS inputs without degrading signal integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor MMBZ5226BS-7-F | Zener voltage 3.3 V ±5%, higher noise (typ. 20 µVRMS/√Hz), TC ≈ −1.5 mV/°C, SOD-323 package (1.7 × 1.3 mm). | Larger footprint and higher thermal drift limit use in space-constrained, wide-temperature designs. | Select when cost sensitivity outweighs noise/TC requirements and board area permits larger package. |
| Vishay BZX84-C3V3-7-F | Zener voltage 3.3 V ±5%, dynamic resistance 90 Ω (lower), but noise ~3× higher and TC ≈ −2.0 mV/°C; SOT-23 package (3.0 × 1.4 mm). | Higher power handling (300 mW) but unsuitable for ultra-low-noise or high-stability reference roles. | Prefer for general-purpose clamping where regulation stability is secondary to surge robustness. |
Compared with MMBZ5226BS-7-F and BZX84-C3V3-7-F, the HZU9C3LTRF-E provides superior noise suppression and thermal stability in a 40% smaller URP package - making it the optimal choice for miniaturized, high-accuracy analog subsystems where reference integrity is non-negotiable.
Availability
HZU9C3LTRF-E is available at Aetrix Electronics and suitable for high-precision sensor biasing, low-noise ADC reference design, and micropower calibration reference applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for HZU9C3LTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.
The HZU-LL Series was developed to address demand for ultra-low-noise, low-drift Zener references in compact SMT form factors - targeting precision analog signal conditioning, sensor excitation, and calibration-critical embedded systems.
FAQ
What is the exact Zener voltage range for HZU9C3LTRF-E at 0.5 mA?
The HZU9C3LTRF-E has a guaranteed Zener voltage range of 3.1 V minimum to 3.5 V maximum when tested at IZ = 0.5 mA and Ta = 25°C. This 0.4 V span reflects the "C" grade tolerance within the HZU3CLL variant designation, and is confirmed in the Electrical Characteristics table on page 2 of REJ03G1216-0500 Rev.5.00. The HZU9C3LTRF-E is the Renesas orderable part number corresponding to HZU3CLL.
Does HZU9C3LTRF-E support operation below 1 µA reverse current?
Yes, the HZU9C3LTRF-E exhibits semi-logarithmic linear VZ–IZ characteristics from IZ = 1 nA up to 1 mA, as explicitly stated in the Features section of the datasheet. At 1 nA, the device remains in controlled Zener conduction with predictable voltage - enabling use in nanoampere-bias circuits such as ultra-low-power sensor wake-up comparators.
What is the package type and footprint compatibility of HZU9C3LTRF-E?
HZU9C3LTRF-E uses the Ultra Small Resin Package (URP), JEITA code PTSP0002ZA-A, also designated SC-76A. Its dimensions are 1.10 mm × 0.80 mm × 0.45 mm, matching the industry-standard 0402 metric footprint (1005 imperial). The cathode is marked on the top surface, and pin 1 is cathode, pin 2 is anode - consistent with SC-76A orientation conventions.
How does the noise performance of HZU9C3LTRF-E compare to standard Zener diodes?
The HZU9C3LTRF-E achieves approximately 1/3 to 1/10 the noise voltage of the legacy HZU series, as documented in the Features section. This ultra-low noise is intrinsic to its silicon epitaxial planar structure and hard-knee design - not achieved via external filtering. For example, at 10 kHz, typical noise is <0.5 µVRMS/√Hz, making it suitable for 16-bit+ data acquisition systems where reference noise dominates total error budget.
Is HZU9C3LTRF-E suitable for automotive applications?
HZU9C3LTRF-E is classified as a Standard-grade Renesas product, intended for applications including industrial equipment, test instruments, and consumer electronics - not for automotive safety-critical or AEC-Q101-qualified systems. While its junction temperature rating extends to +150°C, it lacks automotive-specific qualification, traceability, or PPAP documentation. Use in automotive contexts requires explicit validation and approval by a Renesas sales office per their quality grade policy.
HZU9C3LTRF-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZU9C3LTRF-E FAQ
1.How can I place an order for HZU9C3LTRF-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZU9C3LTRF-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZU9C3LTRF-E reliable?
The price and inventory of HZU9C3LTRF-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZU9C3LTRF-E is usually 5 days.
3.What payment methods are accepted for HZU9C3LTRF-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZU9C3LTRF-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZU9C3LTRF-E?
HZU9C3LTRF-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZU9C3LTRF-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZU9C3LTRF-E?
For technical support, including HZU9C3LTRF-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZU9C3LTRF-E requirements.
6.How does Aetrix verify that HZU9C3LTRF-E is sourced from the original manufacturer or authorized distributors?
All HZU9C3LTRF-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZU9C3LTRF-E meets industry standards.
7.What is the process for return or replacement of HZU9C3LTRF-E?
All HZU9C3LTRF-E units undergo pre-shipment inspection (PSI). If there is an issue with HZU9C3LTRF-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZU9C3LTRF-E part is unused and in its original packaging.
Return procedure for HZU9C3LTRF-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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