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Renesas IDT6116LA20SO
- Part No.:
- IDT6116LA20SO
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116LA20SO.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,979
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Product details
Overview
IDT6116LA20SO from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 20 ns access time, TTL-compatible I/O, and battery-backed data retention at 2 V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous read/write cycles without clocks or refresh, and is packaged in 24-pin SOIC for high-density PCB layouts in embedded controllers and instrumentation.
For engineers reviewing the IDT6116LA20SO datasheet, IDT6116LA20SO pinout, IDT6116LA20SO application, or IDT6116LA20SO equivalent, key selection criteria include standby current (≤35 mA TTL-level / ≤0.1 mA CMOS-level), data retention capability at 2 V, 24-pin SOIC footprint compatibility, and guaranteed 20 ns access timing under industrial conditions.
Technical Context
The IDT6116LA20SO implements fully static asynchronous operation using advanced CMOS technology, eliminating need for clocks or refresh cycles. Its control logic uses independent Chip Select (CS), Output Enable (OE), and Write Enable (WE) inputs to manage read, write, and standby modes - with automatic transition to low-power standby when CS is HIGH.
It features dual standby modes: TTL-level standby (ISB = 35 mA max) and full CMOS-level standby (ISB1 = 0.1 µA max), plus battery backup support enabling data retention at VCC = 2.0 V with ICCDR ≤ 20 µA (commercial) or ≤ 300 µA (military). Input/output pins meet TTL voltage thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and exhibit ≤8 pF capacitance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2K × 8 organization) |
| Access Time (tAA) | 20 ns max - guarantees address-to-data valid delay in read cycles at industrial temp |
| Supply Voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails |
| Standby Current (ISB1) | 0.1 µA max at CMOS-level CS - enables ultra-low-power battery backup mode |
| Data Retention Voltage | 2.0 V min - allows operation from coin-cell or backup battery without regulator |
| Operating Temperature | –45°C to +85°C - qualified for industrial environments including factory automation and telecom infrastructure |
| I/O Compatibility | TTL-input and TTL-output - direct interface with 74LS/74HC families without level shifters |
Pinout & Package
Package: 24-pin Small Outline Integrated Circuit (SOIC), gull-wing lead form, 300 mil body width (SO24-2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel interface for read data output or write data input |
| CS | Chip Select | Active-low enable; drives device into standby when HIGH |
| WE | Write Enable | Active-low control for write operations; latches data on falling edge |
| OE | Output Enable | Active-low control for read data output; places I/O pins in high-Z when HIGH |
| VCC | Power Supply | +5 V ±10% main supply; powers core logic and I/O drivers |
| GND | Ground Reference | 0 V return path for all internal circuits and I/O signals |
Key Features
| Feature | Design Value |
|---|---|
| Battery-backed data retention | Operates down to 2.0 V with ≤300 µA retention current - enables non-volatile storage without external NVSRAM or EEPROM |
| Dual standby power modes | TTL-level standby (35 mA) and CMOS-level standby (0.1 µA) - selectable via CS and input voltage thresholds for system-level power optimization |
| No clock or refresh required | Fully static architecture - eliminates timing-critical refresh circuitry and simplifies controller design in microcontroller-based systems |
| TTL-compatible I/O | VIH ≥ 2.2 V, VIL ≤ 0.8 V, VOL ≤ 0.4 V, VOH ≥ 2.4 V - interoperable with legacy 5 V logic families without translation |
| High-reliability CMOS process | Alpha-particle soft-error immunity - suitable for industrial and mission-critical applications where data integrity is essential |
Applications
| Industrial PLC Memory Buffer | Telecom Line Card Data Cache |
|---|---|
|
Use Scenario: Storing real-time sensor data and configuration registers in programmable logic controllers during power interruption. IC Role / Device Role / Timing Role: Non-refreshing SRAM buffer maintaining volatile state during brownout, enabled by 2 V data retention. Use Value: Eliminates need for external backup capacitors or supercapacitors, reducing BOM count and board space in DIN-rail mounted controllers. |
Use Scenario: Caching packet header metadata and lookup tables in TDM-based telecom line cards operating in extended temperature cabinets. IC Role / Device Role / Timing Role: Low-latency 20 ns read/write memory interfacing directly with FPGA or ASIC datapaths. Use Value: Enables deterministic memory access within tight timing budgets of E1/T1 framing engines without clock domain crossing logic. |
| Medical Diagnostic Instrument RAM | Avionics Display Controller Frame Buffer |
|
Use Scenario: Holding calibration coefficients and real-time waveform buffers in portable ultrasound or ECG devices with battery backup. IC Role / Device Role / Timing Role: Battery-retentive SRAM preserving critical settings during battery swaps or charging cycles. Use Value: Achieves >10-year data retention at 2 V with <30 µA typical current - extends field service intervals and reduces recalibration frequency. |
Use Scenario: Serving as dual-port frame buffer for cockpit display units requiring glitch-free video updates during aircraft power transients. IC Role / Device Role / Timing Role: Asynchronous SRAM providing independent read/write access paths for graphics engine and display controller. Use Value: Guarantees 20 ns access time across –45°C to +85°C - ensures consistent rendering latency despite cabin temperature fluctuations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 512K × 16-bit, 45 ns access, 3.3 V only, no 2 V retention | Higher density but incompatible voltage and retention profile; requires level-shifting and external backup | Select only if migrating to 3.3 V systems and increasing memory depth beyond 16K × 8 |
| AS6C1008-20PCN | 128K × 8-bit, 20 ns access, 5 V, industrial temp, no battery retention | Larger capacity and same speed, but lacks 2 V data retention and has higher ISB1 (1 µA vs. 0.1 µA) | Prefer when board space permits larger SOIC-28 and battery backup is handled externally |
Compared with IDT6116LA20SO, CY62167EV30LL-45ZSXIT offers greater density but sacrifices 2 V retention and introduces voltage incompatibility, while AS6C1008-20PCN matches speed and voltage but requires external retention circuitry and consumes 10× more standby current in full sleep mode.
Availability
IDT6116LA20SO is available at Aetrix Electronics and suitable for industrial automation, telecom infrastructure, and medical instrumentation requiring stable component supply, long-lifecycle support, and verified 20 ns timing performance across temperature extremes.
Supply support for IDT6116LA20SO includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.
IDT6116LA20SO belongs to IDT's legacy high-reliability CMOS SRAM product line, designed specifically for industrial and military applications demanding zero-refresh operation, wide temperature tolerance, and robust data retention under brownout conditions.
FAQ
What is the maximum operating temperature range for IDT6116LA20SO?
IDT6116LA20SO is rated for industrial temperature operation from –45°C to +85°C. This specification is confirmed in the Absolute Maximum Ratings table and Recommended Operating Conditions section of the official datasheet, and applies specifically to the LA version in SOIC packaging. It does not support military-grade –55°C to +125°C operation unless ordered with MIL-spec suffixes (e.g., IDT6116LA20D).
Does IDT6116LA20SO require an external clock or refresh signal?
No, IDT6116LA20SO is a fully static RAM and requires no clock or refresh signals. Its asynchronous architecture relies solely on CS, OE, and WE control lines to manage read, write, and standby states. This eliminates timing-critical refresh circuitry and simplifies integration with microcontrollers lacking dedicated SRAM controllers.
What is the minimum supply voltage for data retention in IDT6116LA20SO?
IDT6116LA20SO supports data retention down to 2.0 V DC, as specified in the Data Retention Characteristics table. At this voltage, it draws ≤300 µA (military grade) or ≤20 µA (commercial/industrial grade), enabling reliable operation from lithium coin cells or backup batteries without regulation.
Is IDT6116LA20SO pin-compatible with other 2K × 8 SRAMs in 24-pin SOIC?
IDT6116LA20SO follows industry-standard 24-pin SOIC pinout for 2K × 8 SRAMs (e.g., A0–A10, I/O0–I/O7, CS, WE, OE, VCC, GND), matching JEDEC MS-012. However, functional compatibility depends on timing parameters and standby behavior - for example, competitors may lack 2 V retention or CMOS-level ISB1.
What is the typical standby current consumption of IDT6116LA20SO in battery backup mode?
In full CMOS-level standby (CS > VHC, VIN < VLC or > VHC), IDT6116LA20SO consumes 0.1 µA typical and 0.9 µA maximum - verified in the ISB1 parameter table. This ultra-low current enables multi-year data retention from small backup batteries, distinguishing it from standard SA versions which draw 2–10 mA in the same condition.
IDT6116LA20SO Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116LA20SO FAQ
1.How can I place an order for IDT6116LA20SO through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116LA20SO on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116LA20SO reliable?
The price and inventory of IDT6116LA20SO are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116LA20SO is usually 5 days.
3.What payment methods are accepted for IDT6116LA20SO?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116LA20SO transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116LA20SO?
IDT6116LA20SO orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116LA20SO order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116LA20SO?
For technical support, including IDT6116LA20SO datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116LA20SO requirements.
6.How does Aetrix verify that IDT6116LA20SO is sourced from the original manufacturer or authorized distributors?
All IDT6116LA20SO products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116LA20SO meets industry standards.
7.What is the process for return or replacement of IDT6116LA20SO?
All IDT6116LA20SO units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116LA20SO, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116LA20SO part is unused and in its original packaging.
Return procedure for IDT6116LA20SO:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116LA20SO Tags
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