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Renesas IDT6116LA20SO8
- Part No.:
- IDT6116LA20SO8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116LA20SO8.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,455
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Product details
Overview
IDT6116LA20SO8 from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 20 ns access time, TTL-compatible I/O, and battery-backed data retention at 2 V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous static operation without clocks or refresh, and is packaged in 24-pin SOIC for high-density PCB layouts in embedded controllers and instrumentation systems.
For engineers reviewing the IDT6116LA20SO8 datasheet, IDT6116LA20SO8 pinout, IDT6116LA20SO8 application, or IDT6116LA20SO8 equivalent, key selection criteria include standby current (≤35 µA full standby), data retention capability (2 V min), 24-pin SOIC footprint compatibility, and industrial-grade reliability per MIL-STD-883 Class B compliance.
Technical Context
The IDT6116LA20SO8 implements fully static asynchronous memory architecture with no clock or refresh circuitry. Its control logic uses independent Chip Select (CS), Output Enable (OE), and Write Enable (WE) inputs to manage read/write cycles and high-impedance I/O states.
It features dual standby modes: TTL-level standby (ISB ≤ 35 mA) and CMOS-level full standby (ISB1 ≤ 0.1 µA at VCC = 5 V), enabling system-level power optimization. Data retention is guaranteed at VCC ≥ 2.0 V with ICCDR ≤ 20 µA over full industrial temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 20 ns max - determines minimum read cycle latency in CPU or microcontroller bus interfaces |
| Supply Voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails |
| Standby Current (ISB1) | 0.1 µA max at CMOS-level CS - enables ultra-low-power battery backup operation |
| Data Retention Voltage | 2.0 V min - allows retention from coin-cell or backup battery without regulator |
| Operating Temperature | –45°C to +85°C - qualified for industrial environments including factory automation and telecom infrastructure |
| I/O Compatibility | TTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive (VOH ≥ 2.4 V, VOL ≤ 0.4 V) - direct interfacing with legacy microcontrollers |
Pinout & Package
Package: 24-pin Small Outline Integrated Circuit (SOIC), gull-wing lead form, 300-mil body width (SO24-2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus for 2K-word selection; TTL-compatible, no external pull-ups required |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path; high-impedance when CS or OE inactive - enables bus sharing |
| CS | Chip Select | Active-low enable; drives device into full standby (ISB1) when high - primary power-gating control |
| WE | Write Enable | Active-low write strobe; latches data on falling edge - controls write cycle timing (tWP = 12 ns min) |
| OE | Output Enable | Active-low output gate; enables read data only when CS and OE both low - prevents bus contention |
| VCC | Power Supply | +5 V ±10% supply; powers core logic and I/O drivers - decoupling capacitor required per datasheet |
| GND | Ground Reference | Signal and power ground return - must be low-impedance connection for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Battery-backed data retention | Operates at 2.0 V with ≤20 µA retention current - eliminates need for external voltage supervisor or regulator in backup mode |
| Ultra-low full-standby current | 0.1 µA typical at VCC = 5 V - reduces system sleep-mode power by >99% vs. standard SRAMs |
| Industrial temperature qualification | –45°C to +85°C operation with full AC/DC specs - suitable for uncontrolled ambient environments |
| No refresh or clock required | Fully static CMOS design - simplifies system timing, removes DRAM controller dependency |
| TTL-compatible interface | Direct connection to 5 V microcontrollers (e.g., 8051, PIC18F) without level-shifting circuitry |
Applications
| Industrial PLC Data Buffer | Medical Instrumentation Memory |
|---|---|
|
Use Scenario: Storing real-time sensor calibration tables and configuration parameters in programmable logic controllers deployed in factory-floor cabinets. IC Role / Device Role / Timing Role: Non-volatile data buffer during main power loss; retains critical settings via 2 V battery backup. Use Value: Eliminates EEPROM wear-out and write-latency issues while ensuring deterministic 20 ns read access during runtime. |
Use Scenario: Holding patient-specific therapy parameters and safety-critical alarm thresholds in portable infusion pumps and ECG monitors. IC Role / Device Role / Timing Role: Low-power static RAM with guaranteed data retention during battery-swaps or brownouts. Use Value: Meets IEC 62304 safety requirements via zero-refresh operation and MIL-STD-883 Class B reliability validation. |
| Telecom Line Card Cache | Avionics Test Equipment Buffer |
|
Use Scenario: Caching protocol stack state and packet header metadata in carrier-grade DSLAM and ONU line cards operating in temperature-variable central offices. IC Role / Device Role / Timing Role: High-speed 20 ns read/write interface to FPGA-based packet processors with industrial thermal margin. Use Value: Enables deterministic latency under burst traffic loads without DRAM refresh jitter or ECC overhead. |
Use Scenario: Capturing transient fault logs and sensor snapshots during in-flight diagnostics in ground support test rigs for aircraft ECUs. IC Role / Device Role / Timing Role: Radiation-tolerant CMOS SRAM with alpha-particle soft-error immunity for mission-critical data capture. Use Value: Avoids single-event upsets (SEUs) common in older SRAM technologies, validated per MIL-STD-883 screening. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 32K × 8-bit, 45 ns access, 3.3 V only, no 2 V data retention | Higher density but incompatible voltage domain; requires level translation in 5 V systems | Choose only if migrating to 3.3 V architecture and higher capacity is needed |
| AS6C1008-20TIN | 128K × 8-bit, 20 ns access, 5 V, no battery retention, commercial temp only (0°C to +70°C) | Lacks industrial temperature rating and 2 V retention - unsuitable for extended ambient or backup scenarios | Select only for cost-sensitive commercial applications where temperature and retention are non-critical |
Compared with CY62167EV30LL-45ZSXI and AS6C1008-20TIN, the IDT6116LA20SO8 uniquely delivers 20 ns access, industrial temperature range, and verified 2 V battery retention in a mature 5 V SOIC package - making it irreplaceable for legacy-reliant, power-constrained industrial designs.
Availability
IDT6116LA20SO8 is available at Aetrix Electronics and suitable for industrial PLCs, medical instrumentation, telecom line cards, avionics test equipment, and embedded controllers requiring stable component supply across long product lifecycles.
Supply support for IDT6116LA20SO8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in timing, memory, and interface solutions before its acquisition by Renesas in 2019. Known for high-reliability SRAMs and clock products.
The IDT6116LA20SO8 belongs to IDT's legacy 6116 family of low-power CMOS static RAMs, designed specifically for industrial and military applications demanding data retention, wide temperature operation, and pin-compatible upgrade paths from earlier 2114/6116 generations.
FAQ
What is the maximum operating temperature range for IDT6116LA20SO8?
IDT6116LA20SO8 is rated for industrial temperature operation from –45°C to +85°C. This specification is guaranteed across all DC and AC electrical parameters, including 20 ns access time and 0.1 µA full-standby current. It is not rated for commercial (0°C to +70°C) or military (–55°C to +125°C) ranges - those require different suffixes (e.g., IDT6116LA20SOI for industrial, IDT6116LA20SOY for military).
Does IDT6116LA20SO8 support true battery backup with data retention below 5 V?
Yes. IDT6116LA20SO8 supports guaranteed data retention at VCC = 2.0 V, consuming ≤20 µA (typical 1–4 µA). This is a defining feature of the "LA" (low-power, battery-retention) variant - the "SA" version does not offer this capability. Retention is valid across the full industrial temperature range and requires no external circuitry beyond a 2 V source.
What is the pin-compatible replacement for IDT6116LA20SO8 in SOIC package?
IDT6116LA20SO8 has no direct pin-compatible drop-in replacement due to its unique combination of 20 ns speed, LA retention, and industrial temperature rating. Alternate speed grades (e.g., IDT6116LA25SO8) share identical pinout and function but differ in access time and current specs. Cross-references like AS6C1008-20TIN use the same 24-pin SOIC footprint but lack retention and temperature rating - requiring redesign validation.
How does the standby power mode work on IDT6116LA20SO8?
IDT6116LA20SO8 offers two standby modes: TTL-level standby (ISB ≤ 35 mA when CS > VIH) and CMOS-level full standby (ISB1 ≤ 0.1 µA when CS > VHC and inputs held at valid logic levels). Full standby is activated automatically when CS rises above VHC and all inputs are stable - enabling µA-level system sleep current without external control logic.
Is IDT6116LA20SO8 compliant with MIL-STD-883 Class B?
Yes. IDT6116LA20SO8 is manufactured and tested to MIL-STD-883, Class B requirements, including mechanical shock, vibration, temperature cycling, and burn-in. This compliance applies specifically to devices ordered with military temperature suffixes (e.g., IDT6116LA20SOY), but the underlying die and process are qualified per Class B - confirmed in the datasheet's "Military product compliant to MIL-STD-833, Class B" statement.
IDT6116LA20SO8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116LA20SO8 FAQ
1.How can I place an order for IDT6116LA20SO8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116LA20SO8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116LA20SO8 reliable?
The price and inventory of IDT6116LA20SO8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116LA20SO8 is usually 5 days.
3.What payment methods are accepted for IDT6116LA20SO8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116LA20SO8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116LA20SO8?
IDT6116LA20SO8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116LA20SO8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116LA20SO8?
For technical support, including IDT6116LA20SO8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116LA20SO8 requirements.
6.How does Aetrix verify that IDT6116LA20SO8 is sourced from the original manufacturer or authorized distributors?
All IDT6116LA20SO8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116LA20SO8 meets industry standards.
7.What is the process for return or replacement of IDT6116LA20SO8?
All IDT6116LA20SO8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116LA20SO8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116LA20SO8 part is unused and in its original packaging.
Return procedure for IDT6116LA20SO8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116LA20SO8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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