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Renesas IDT6116LA25SO
- Part No.:
- IDT6116LA25SO
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116LA25SO.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,332
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Product details
Overview
IDT6116LA25SO from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 25 ns access time, TTL-compatible I/O, and battery-backed data retention at 2 V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous read/write cycles without clocks or refresh, and is used in embedded controllers, instrumentation buffers, and legacy system memory expansion.
For engineers reviewing the IDT6116LA25SO datasheet, IDT6116LA25SO pinout, IDT6116LA25SO application, or IDT6116LA25SO equivalent, key selection criteria include standby current (0.1 mA full standby), data retention capability (2 V min), 24-pin SOIC package compatibility, and industrial-grade reliability per MIL-STD-883 Class B compliance.
Technical Context
The IDT6116LA25SO implements fully static asynchronous operation using advanced CMOS technology, eliminating need for clocks or refresh cycles. Its control logic uses independent Chip Select (CS), Output Enable (OE), and Write Enable (WE) signals to manage read/write/standby modes with precise timing windows defined by tRC (25 ns), tAA (25 ns), and tACS (25 ns).
It features dual standby modes: TTL-level standby (ISB = 35 mA max) and CMOS-level full standby (ISB1 = 0.1 mA typ), plus battery backup support enabling data retention at VCC = 2.0 V with ICCDR ≤ 30 µA across all temperatures - a capability exclusive to the LA variant.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2K × 8), supporting byte-wide data bus interfacing |
| Access Time (tAA) | 25 ns max - defines minimum address-to-data-valid delay in read operations |
| Supply Voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails |
| Standby Current (ISB1) | 0.1 mA typical at CMOS-level CS deassertion - enables ultra-low-power hold mode |
| Data Retention Voltage | 2.0 V min - allows operation from backup battery during main power loss |
| Operating Temperature | –45°C to +85°C - qualified for industrial environments without derating |
| I/O Compatibility | TTL-input and TTL-output - direct interface with 74LS/74HC logic without level shifters |
Pinout & Package
Package: 24-pin Small Outline IC (SOIC), gull-wing lead form, 300 mil body width (SO24-2), RoHS-compliant plastic construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel data path for read/write; high-impedance when disabled |
| CS | Chip Select | Active-low enable; drives device into full standby when HIGH |
| WE | Write Enable | Active-low control for write cycle initiation; latches data on falling edge |
| OE | Output Enable | Active-low control for output buffer activation during read |
| VCC | Power Supply | +5 V supply; supports 2 V data retention in battery-backup mode |
| GND | Ground Reference | Signal and power return plane; decoupling required per high-speed layout rules |
Key Features
| Feature | Design Value |
|---|---|
| Static asynchronous architecture | No clock or refresh circuitry needed - simplifies timing design and reduces system overhead |
| 2 V data retention | Preserves stored data during main power failure using external 2 V battery source |
| CMOS-level full standby | Draws only 0.1 mA when CS > VHC - extends battery life in backup applications |
| TTL-compatible I/O | Direct connection to legacy 5 V logic families without interface components |
| MIL-STD-883 Class B compliance | Validated for high-reliability industrial use with screening for burn-in and parametric stability |
Applications
| Industrial PLC Memory Buffer | Avionics Data Logger |
|---|---|
Use Scenario: Temporary storage of sensor readings and control state between CPU polling intervals in programmable logic controllers. IC Role / Device Role / Timing Role: Byte-accessible SRAM providing deterministic 25 ns read latency and zero-refresh operation. Use Value: Eliminates DRAM refresh overhead while maintaining data integrity during brownouts via 2 V battery retention. |
Use Scenario: Capturing flight telemetry during transient power loss in certified avionics subsystems. IC Role / Device Role / Timing Role: Nonvolatile shadow memory holding last valid dataset until recovery. Use Value: Guarantees data persistence at –45°C to +85°C with <30 µA retention current, meeting DO-160 environmental stress requirements. |
| Medical Diagnostic Equipment Cache | Legacy Industrial HMI |
Use Scenario: Storing calibration coefficients and real-time waveform buffers in ultrasound imaging front-ends. IC Role / Device Role / Timing Role: Low-noise, static memory interfaced directly to 8-bit microcontroller data bus. Use Value: TTL compatibility avoids level-shifter complexity; 0.1 mA standby current minimizes thermal load in sealed enclosures. |
Use Scenario: Expanding RAM capacity in aging human-machine interface panels running proprietary firmware. IC Role / Device Role / Timing Role: Pin-compatible drop-in replacement for obsolete 6116-series SRAMs in 24-pin SOIC footprint. Use Value: Matches original timing specs (25 ns) and electrical behavior, enabling field upgrades without PCB redesign. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 32K × 8, 45 ns access, 3.3 V core, SOIC-28 | Higher density, lower voltage, larger package - requires PCB layout change | Select only if upgrading system memory capacity and migrating to 3.3 V logic |
| AS6C1008-25ZIN | 128K × 8, 25 ns, 5 V, SOIC-28, no battery retention | Same speed but no 2 V data retention; incompatible pinout (28-pin vs. 24-pin) | Use where higher density is needed and battery backup is unnecessary |
Compared with IDT6116LA25SO, CY62167EV30LL-45ZSXI offers greater density but demands voltage and footprint changes, while AS6C1008-25ZIN matches speed but sacrifices data retention and requires board rework - neither is pin-compatible, making IDT6116LA25SO irreplaceable for drop-in industrial retrofits requiring 2 V hold.
Availability
IDT6116LA25SO is available at Aetrix Electronics and suitable for industrial automation, avionics data logging, and medical diagnostic equipment requiring stable component supply and long-term obsolescence management.
Supply support for IDT6116LA25SO includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The IDT6116LA25SO belongs to IDT's legacy CMOS SRAM product line, engineered specifically for industrial and military systems needing reliable, low-power, battery-backed memory with TTL interoperability and extended temperature operation.
FAQ
What is the maximum operating temperature range for the IDT6116LA25SO?
The IDT6116LA25SO is rated for industrial temperature operation from –45°C to +85°C. This range is explicitly specified in the ordering information and DC characteristics tables, and it supports sustained operation without derating under continuous thermal stress within these limits. The IDT6116LA25SO does not support commercial (0°C to +70°C) or military (–55°C to +125°C) grades - its marking and documentation confirm industrial qualification only.
Does the IDT6116LA25SO require a clock signal or refresh cycles?
No, the IDT6116LA25SO uses fully static CMOS architecture and requires no clock input or periodic refresh. Its operation is purely asynchronous, controlled solely by CS, OE, and WE timing. This eliminates timing-critical refresh overhead and makes the IDT6116LA25SO ideal for simple microcontroller interfaces where deterministic access without background maintenance is essential.
What is the minimum supply voltage required for data retention on the IDT6116LA25SO?
The IDT6116LA25SO guarantees data retention down to 2.0 V (VDR = 2.0 V), as confirmed in Table 10 (Data Retention Characteristics). At this voltage, typical retention current is 30 µA max over full temperature range. This 2 V capability is exclusive to the LA version and enables use with standard lithium or coin-cell backup sources - a feature not present in the SA variant.
Is the IDT6116LA25SO pin-compatible with other 24-pin 6116-series SRAMs?
Yes, the IDT6116LA25SO shares identical 24-pin SOIC pinout (SO24-2) and functional pin assignments with industry-standard 2K × 8 SRAMs including the IDT6116SA25SO and original Mostek MK6116. Address (A0–A10), data (I/O0–I/O7), and control (CS, WE, OE, VCC, GND) pins align exactly - enabling direct substitution where 25 ns speed and LA retention are acceptable.
What is the standby current consumption of the IDT6116LA25SO in full CMOS standby mode?
In full CMOS standby mode (CS > VHC, VIN < VLC or VIN > VHC), the IDT6116LA25SO draws only 0.1 mA typical (100 µA), with a maximum of 0.9 mA across temperature - specified as ISB1 in Table 8. This ultra-low quiescent draw enables multi-year battery operation in backup configurations, distinguishing it from the SA variant which consumes 2 mA minimum in the same mode.
IDT6116LA25SO Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116LA25SO FAQ
1.How can I place an order for IDT6116LA25SO through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116LA25SO on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116LA25SO reliable?
The price and inventory of IDT6116LA25SO are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116LA25SO is usually 5 days.
3.What payment methods are accepted for IDT6116LA25SO?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116LA25SO transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116LA25SO?
IDT6116LA25SO orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116LA25SO order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116LA25SO?
For technical support, including IDT6116LA25SO datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116LA25SO requirements.
6.How does Aetrix verify that IDT6116LA25SO is sourced from the original manufacturer or authorized distributors?
All IDT6116LA25SO products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116LA25SO meets industry standards.
7.What is the process for return or replacement of IDT6116LA25SO?
All IDT6116LA25SO units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116LA25SO, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116LA25SO part is unused and in its original packaging.
Return procedure for IDT6116LA25SO:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116LA25SO Tags
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