Renesas IDT6116LA25SO8

Overview

IDT6116LA25SO8 from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 25 ns access time, TTL-compatible I/O, and battery-backed data retention down to 2V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous static operation without clocks or refresh, and is packaged in 24-pin SOIC for high-density board layouts-used in legacy industrial controllers, avionics subsystems, and instrumentation requiring nonvolatile SRAM holdover.

For engineers reviewing the IDT6116LA25SO8 datasheet, IDT6116LA25SO8 pinout, IDT6116LA25SO8 application, or IDT6116LA25SO8 equivalent, key selection criteria include guaranteed 25 ns read cycle time, 0.1 µA full-standby current at CMOS-level chip select, 2V data retention capability, industrial-grade reliability per MIL-STD-883 Class B compliance, and direct TTL interface compatibility without level-shifting.

Technical Context

The IDT6116LA25SO8 implements fully static asynchronous memory architecture with no internal clocks or refresh circuitry. Its control logic uses independent Chip Select (CS), Output Enable (OE), and Write Enable (WE) inputs to manage read/write/standby states, with automatic transition to low-power standby when CS is deasserted.

It features dual standby modes: TTL-level standby (ISB = 35 mA max) and CMOS-level full-standby (ISB1 = 0.1 µA typical), plus battery backup support enabling data retention at VCC = 2.0 V with ICCDR ≤ 30 µA across all temperatures. All DC and AC parameters-including tAA = 25 ns, tRC = 25 ns, and VIH/VIL thresholds-are specified over –45°C to +85°C.

Key Specifications

Pinout & Package

Package: 24-pin Small Outline Integrated Circuit (SOIC), gull-wing lead form, 300-mil body width (SO24-2), RoHS-compliant plastic construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IDT6116LA25SO8, CY62167EV30LL-45ZSXI offers greater density and modern low-voltage operation but introduces interface complexity, while AS6C1008-25ZIN matches speed and voltage but omits the critical 2V data retention feature essential for fail-safe holdover.

Availability

IDT6116LA25SO8 is available at Aetrix Electronics and suitable for industrial automation, avionics data acquisition, and medical diagnostic instruments requiring stable component supply across extended product lifecycles.

Supply support for IDT6116LA25SO8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF solutions for communications and computing markets.

IDT6116LA25SO8 belongs to IDT's legacy high-reliability CMOS SRAM product line, designed specifically for industrial and aerospace applications demanding guaranteed data retention, wide temperature operation, and long-term obsolescence support.

FAQ

What is the maximum operating temperature range for IDT6116LA25SO8?

IDT6116LA25SO8 is rated for industrial temperature operation from –45°C to +85°C. This range is explicitly defined in the ordering information and verified across all AC/DC electrical specifications in the datasheet. The device maintains full functionality-including 25 ns access time and 0.1 µA standby current-across this entire span without derating. IDT6116LA25SO8 does not support commercial (0°C to +70°C) or military (–55°C to +125°C) grades in the SO8 package variant.

Does IDT6116LA25SO8 require external refresh circuitry?

No, IDT6116LA25SO8 is a fully static RAM and requires no clocks, timers, or refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied above the 2.0 V retention threshold. The datasheet confirms "static operation: no clocks or refresh required" and validates this behavior across all temperature ranges. IDT6116LA25SO8 eliminates refresh overhead in microcontroller-based systems, simplifying firmware and reducing EMI.

Can IDT6116LA25SO8 retain data at 2.0 V, and what is the typical current draw in that mode?

Yes, IDT6116LA25SO8 supports guaranteed data retention at VCC = 2.0 V, a feature exclusive to the LA (low-power) version. In this mode, typical data retention current (ICCDR) is 20 µA at +25°C and ≤30 µA across the full –45°C to +85°C range. This enables direct coin-cell backup without regulators. The datasheet specifies VDR = 2.0 V min and provides waveform diagrams confirming stable operation down to this voltage. IDT6116LA25SO8 delivers deterministic holdover without external supervision.

What is the pin-compatible replacement for IDT6116LA25SO8 if it becomes obsolete?

IDT6116LA25SO8 has no documented pin-compatible replacement due to its specific combination of 24-pin SOIC packaging, 2K × 8 organization, 25 ns speed, and 2V retention. While AS6C1008-25ZIN shares the same speed and voltage, it is 128K × 8 and physically incompatible. CY62167EV30LL-45ZSXI differs in density, voltage, and timing. IDT6116LA25SO8 remains supported through Aetrix's long-term availability program, with lifecycle coordination to prevent unplanned obsolescence.

How does the dual standby mode (TTL vs. CMOS level) work on IDT6116LA25SO8?

IDT6116LA25SO8 enters TTL-level standby (ISB = 35 mA max) when CS exceeds VIH (≥2.2 V), and full CMOS-level standby (ISB1 = 0.1 µA typical) only when CS exceeds VHC (VCC – 0.2 V, e.g., ≥4.8 V at VCC = 5.0 V). This two-threshold design allows flexible power management: moderate standby for quick wake-up, deep standby for extended hold. The distinction is defined in Table 8 and confirmed by the truth table. IDT6116LA25SO8 leverages this to optimize both responsiveness and energy efficiency.