Renesas IDT6116LA35SO

Overview

IDT6116LA35SO from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 35 ns access time, TTL-compatible I/O, and battery-backed data retention at 2 V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous read/write cycles without clocks or refresh, and is packaged in 24-pin SOIC for high-density PCB layouts in embedded controllers and instrumentation systems.

For engineers reviewing the IDT6116LA35SO datasheet, IDT6116LA35SO pinout, IDT6116LA35SO application, or IDT6116LA35SO equivalent, key selection criteria include standby current (25 µA TTL-level, 0.1 µA CMOS-level), data retention capability (2 V min), 24-pin SOIC footprint compatibility, and industrial-grade reliability per MIL-STD-883 Class B compliance.

Technical Context

The IDT6116LA35SO implements fully static asynchronous operation using advanced CMOS technology, eliminating need for clocks or refresh cycles. Its control logic uses independent Chip Select (CS), Output Enable (OE), and Write Enable (WE) signals to manage read, write, and standby modes - with automatic transition to low-power standby when CS is HIGH.

It features dual standby modes: TTL-level standby (ISB = 25 µA max) and full CMOS-level standby (ISB1 = 0.1 µA max), plus battery backup data retention down to 2 V (ICCDR ≤ 20 µA). All inputs and outputs meet TTL voltage thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and drive ±4 mA/±8 mA loads.

Key Specifications

Pinout & Package

Package: 24-pin Small Outline Integrated Circuit (SOIC), gull-wing lead form, 300 mil body width (SO24-2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IDT6116LA35SO, CY62167EV30LL-45ZSXI offers higher density and lower voltage operation but demands full system requalification, while AS6C1008-35PCN provides identical speed and voltage but requires layout changes due to 28-pin SOIC packaging and extended address bus.

Availability

IDT6116LA35SO is available at Aetrix Electronics and suitable for industrial automation, medical instrumentation, avionics control panels, and test equipment requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for IDT6116LA35SO includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

IDT6116LA35SO belongs to IDT's legacy high-reliability CMOS SRAM product line, designed specifically for industrial and military applications demanding low-power operation, battery backup, and extended temperature tolerance without refresh circuitry.

FAQ

What is the maximum operating temperature range for IDT6116LA35SO?

IDT6116LA35SO is rated for industrial temperature operation from –45°C to +85°C. This specification is guaranteed per the manufacturer's datasheet and validated under MIL-STD-883 Class B test conditions. The device maintains full functionality-including 35 ns access time and 0.1 µA standby current-across this entire range. No derating is required for timing or power parameters within these limits.

Does IDT6116LA35SO require an external clock or refresh signal?

No, IDT6116LA35SO does not require any external clock or refresh signal. It is a fully static RAM built with CMOS technology that retains data indefinitely as long as power is applied. The IDT6116LA35SO uses asynchronous control lines (CS, OE, WE) only, making it ideal for simple microcontroller interfaces where timing predictability and minimal external components are critical.

What is the minimum supply voltage required for data retention in IDT6116LA35SO?

IDT6116LA35SO supports data retention down to 2.0 V, a feature exclusive to the LA (low-power) version. At this voltage, the device consumes ≤20 µA (typical 1–4 µA), enabling long-term memory hold using small backup batteries or supercapacitors. This capability is confirmed in the datasheet's Data Retention Characteristics table and applies only when CS is HIGH and no active read/write cycles occur.

Is IDT6116LA35SO pin-compatible with other 24-pin SRAMs like the HM6116 or IS61LV256AL?

IDT6116LA35SO shares the same 24-pin SOIC package and 2K × 8 organization as HM6116, but differs in pin function mapping: HM6116 uses separate CE and OE pins, whereas IDT6116LA35SO combines chip select and output enable logic differently. IS61LV256AL is a 32K × 8 device in 28-pin SOIC and is not pin-compatible. Therefore, IDT6116LA35SO is not a drop-in replacement for either part without schematic and layout revision.

What are the two standby current modes supported by IDT6116LA35SO?

IDT6116LA35SO supports two distinct standby modes: TTL-level standby (ISB = 25 µA max) activated when CS > VIH, and full CMOS-level standby (ISB1 = 0.1 µA max) triggered when CS > VHC and all inputs are held at valid logic levels (VIN < VLC or VIN > VHC). The latter enables ultra-low-power operation in battery-critical applications, and both modes are specified across the full industrial temperature range.