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Renesas IDT6116LA35SO8
- Part No.:
- IDT6116LA35SO8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116LA35SO8.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,058
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Product details
Overview
IDT6116LA35SO8 from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 35 ns access time, TTL-compatible I/O, and battery-backed data retention at 2V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous read/write cycles without clocks or refresh, and is used in embedded controllers, instrumentation buffers, and legacy system memory expansion.
For engineers reviewing the IDT6116LA35SO8 datasheet, IDT6116LA35SO8 pinout, IDT6116LA35SO8 application, or IDT6116LA35SO8 equivalent, key selection criteria include standby current (25 µA TTL-level, 0.1 µA CMOS-level), 2V data retention capability, 24-pin SOIC package compatibility, and industrial-grade reliability per MIL-STD-883 Class B compliance.
Technical Context
The IDT6116LA35SO8 implements fully static asynchronous operation using high-reliability CMOS technology, eliminating need for clocks or refresh cycles. Its control logic uses independent Chip Select (CS), Output Enable (OE), and Write Enable (WE) signals to manage read/write/standby states via TTL-compatible voltage thresholds (VIH = 2.2 V min, VIL = 0.8 V max).
It features dual standby modes: TTL-level standby (ISB = 25 µA max at VCC = 5.5 V) and full CMOS-level standby (ISB1 = 0.1 µA max), plus guaranteed data retention at VCC ≥ 2.0 V with ICCDR ≤ 20 µA over full industrial temperature range. All timing parameters-including tAA = 35 ns, tRC = 35 ns, and tPD = 35 ns-are specified and production-tested for this speed grade.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2,048 × 8), enabling byte-wide data storage without external demultiplexing |
| Access Time (tAA) | 35 ns max - defines minimum address-to-valid-data delay in read cycles |
| Read Cycle Time (tRC) | 35 ns max - sets shortest interval between successive read operations |
| Standby Current (ISB) | 25 µA max at TTL-level CS deassertion - enables low-power sleep in battery-backed systems |
| Data Retention Voltage | 2.0 V min - allows persistent memory hold during main power loss using backup battery |
| Operating Temperature | –45°C to +85°C - qualified for industrial environments including factory automation and telecom infrastructure |
| I/O Compatibility | TTL-compatible inputs/outputs - interfaces directly with 5V microcontrollers and logic without level-shifting |
Pinout & Package
Package: 24-pin Small Outline Integrated Circuit (SOIC), gull-wing lead form, 300 mil body width, RoHS-compliant plastic encapsulation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus accepting 0–2047 row/column selections for 2K-word addressing |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel interface supporting simultaneous read or write of one byte per cycle |
| CS | Chip Select | Active-low enable controlling device activation; HIGH forces high-Z outputs and standby mode |
| WE | Write Enable | Active-low signal initiating write cycle when CS is LOW and OE is HIGH |
| OE | Output Enable | Active-low signal enabling output drivers during read; must be HIGH for writes |
| VCC | Power Supply | +5.0 V ±10% supply rail; supports 2V data retention during brownout conditions |
| GND | Ground Reference | 0 V reference for all input thresholds and output logic levels |
Key Features
| Feature | Design Value |
|---|---|
| Battery-backed data retention | Operates at 2.0 V with ICCDR ≤ 20 µA - sustains memory contents during main power failure |
| Dual standby power modes | TTL-level ISB = 25 µA; CMOS-level ISB1 = 0.1 µA - selectable low-power states for system optimization |
| Fully static architecture | No clocks or refresh required - simplifies timing design and eliminates dynamic power overhead |
| TTL-compatible I/O | VIH = 2.2 V min, VIL = 0.8 V max - direct interfacing with legacy 5V microcontrollers and FPGAs |
| MIL-STD-883 Class B compliance | Qualified for industrial applications requiring enhanced reliability and extended temperature operation |
Applications
| Industrial PLC Memory Buffer | Legacy Instrumentation Data Cache |
|---|---|
Use Scenario: Storing real-time sensor readings and configuration parameters in programmable logic controllers operating in factory-floor environments. IC Role / Device Role / Timing Role: Byte-addressable non-refreshing SRAM providing deterministic 35 ns read/write latency for deterministic control loop execution. Use Value: Enables reliable data capture during transient power dips via 2V battery retention, avoiding volatile memory loss in unattended operation. |
Use Scenario: Holding calibration tables and measurement history in benchtop multimeters and oscilloscopes with long service life requirements. IC Role / Device Role / Timing Role: Low-power static RAM serving as local scratchpad memory for microcontroller-based front-end processing. Use Value: Reduces system standby current to <30 µA while maintaining data integrity-critical for battery-powered portable instruments. |
| Telecom Line Card Buffer | Avionics System Configuration Store |
Use Scenario: Acting as packet buffer and status register storage in T1/E1 line interface cards exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: Industrial-temperature-rated SRAM interfacing directly with FPGA-based framing logic via 8-bit parallel bus. Use Value: Guarantees 35 ns access and 25 µA standby across –45°C to +85°C, eliminating thermal derating concerns in chassis-mounted designs. |
Use Scenario: Storing flight-critical configuration flags and fault logs in airborne computing modules where power interruption is possible. IC Role / Device Role / Timing Role: MIL-STD-883 Class B qualified memory preserving state during engine start transients and auxiliary power switching. Use Value: Provides certified data retention at 2.0 V with <0.1 µA CMOS standby - meets DO-160 lightning-induced transient resilience requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 512K × 16-bit, 45 ns access, 3.3 V only, no 2V retention | Higher density but incompatible voltage and retention capability | Select only if migrating to 3.3 V systems and requiring >16K capacity; not drop-in compatible |
| AS6C1008-35PCN | 128K × 8-bit, 35 ns, 5 V, 1 µA standby, no 2V retention | Same speed and voltage but lacks battery backup functionality | Use where ultra-low standby suffices but 2V retention is unnecessary; requires redesign for larger footprint |
Compared with IDT6116LA35SO8, CY62167EV30LL-45ZSXI offers higher density at slower speed and different voltage, while AS6C1008-35PCN matches speed and voltage but omits critical 2V data retention-making IDT6116LA35SO8 uniquely suited for battery-backed industrial memory.
Availability
IDT6116LA35SO8 is available at Aetrix Electronics and suitable for industrial PLCs, legacy instrumentation, telecom line cards, and avionics configuration storage requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for IDT6116LA35SO8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory, and interface solutions for communications, computing, and industrial markets.
IDT6116LA35SO8 belongs to the IDT6116SA/LA family of high-reliability CMOS static RAMs designed specifically for industrial and military applications demanding zero-refresh operation, low standby power, and robust data retention under power interruption.
FAQ
What is the maximum operating temperature range for IDT6116LA35SO8?
IDT6116LA35SO8 is rated for industrial temperature operation from –45°C to +85°C. This range is explicitly defined in the ordering information and DC electrical characteristics tables, and it applies to the SO8 (SOIC) package variant with LA (low-power) and 35 ns speed grade. The device does not support commercial (0°C to +70°C) or military (–55°C to +125°C) grades in this specific SO8 configuration.
Does IDT6116LA35SO8 require a clock or refresh signal to retain data?
No, IDT6116LA35SO8 is a fully static RAM and requires no clock or refresh signal for data retention. Its CMOS latch-based memory cells maintain state indefinitely as long as VCC remains within specification (4.5 V to 5.5 V) or drops to the 2.0 V data retention threshold. This eliminates timing-critical refresh circuitry in host system design.
What is the standby current consumption of IDT6116LA35SO8 under TTL-level chip deselect?
IDT6116LA35SO8 draws a maximum of 25 µA in TTL-level standby mode (ISB), measured when CS is HIGH, VCC = 5.5 V, and f = fMAX. In full CMOS-level standby (ISB1), with CS > VHC and input voltages outside valid logic range, current drops to 0.1 µA max - critical for battery-backed retention scenarios.
Can IDT6116LA35SO8 operate with a 2V backup supply while main power is off?
Yes, IDT6116LA35SO8 guarantees data retention at VCC ≥ 2.0 V, consuming ≤20 µA (typical 1–4 µA) in this mode. This feature is exclusive to the LA version and is validated across the full industrial temperature range, enabling seamless transition to battery backup during main power loss without data corruption.
Is IDT6116LA35SO8 pin-compatible with other 24-pin SRAMs like the HM6116 or 6116 series?
IDT6116LA35SO8 follows the industry-standard 24-pin 2K × 8 SRAM pinout (A0–A10, I/O0–I/O7, CS, WE, OE, VCC, GND), matching HM6116, MK6116, and most second-source 6116 variants. However, timing parameters, standby current, and 2V retention are unique to the IDT LA version - functional substitution requires verification of system-level timing margins and power management.
IDT6116LA35SO8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116LA35SO8 FAQ
1.How can I place an order for IDT6116LA35SO8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116LA35SO8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116LA35SO8 reliable?
The price and inventory of IDT6116LA35SO8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116LA35SO8 is usually 5 days.
3.What payment methods are accepted for IDT6116LA35SO8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116LA35SO8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116LA35SO8?
IDT6116LA35SO8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116LA35SO8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116LA35SO8?
For technical support, including IDT6116LA35SO8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116LA35SO8 requirements.
6.How does Aetrix verify that IDT6116LA35SO8 is sourced from the original manufacturer or authorized distributors?
All IDT6116LA35SO8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116LA35SO8 meets industry standards.
7.What is the process for return or replacement of IDT6116LA35SO8?
All IDT6116LA35SO8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116LA35SO8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116LA35SO8 part is unused and in its original packaging.
Return procedure for IDT6116LA35SO8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116LA35SO8 Tags
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