Renesas IDT6116LA35SOG8

Overview

IDT6116LA35SOG8 from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 35 ns access time, TTL-compatible I/O, and battery-backed data retention at 2 V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous read/write cycles without clocks or refresh, and is used in embedded controllers, instrumentation, and legacy system memory expansion where power-constrained nonvolatile storage is required.

For engineers reviewing the IDT6116LA35SOG8 datasheet, IDT6116LA35SOG8 pinout, IDT6116LA35SOG8 application, or IDT6116LA35SOG8 equivalent, key selection considerations include standby current (25 µA TTL-level, 0.1 µA CMOS-level), data retention capability at 2 V, 24-pin SOIC package compatibility, and industrial-grade reliability under sustained bias conditions.

Technical Context

The IDT6116LA35SOG8 implements fully static asynchronous operation using high-reliability CMOS technology, eliminating need for clocks or refresh cycles. Its control logic responds to independent CS, OE, and WE signals to manage read, write, and high-impedance output states per the truth table - no internal state machines or timing dependencies beyond specified setup/hold windows.

It features dual standby modes: TTL-level standby (ISB = 25 µA max) triggered by CS > VIH, and ultra-low-power CMOS-level standby (ISB1 = 0.1 µA max) activated when CS > VHC and inputs held at valid logic levels. Data retention at VCC = 2.0 V is guaranteed across full industrial temperature range with ICCDR ≤ 1.5 µA.

Key Specifications

Pinout & Package

Package: 24-pin Small Outline IC (SOIC), gull-wing lead form, 300 mil body width (SO24-2), RoHS-compliant lead finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IDT6116LA35SOG8, CY62167EV30LL-45ZSXIT offers greater density but mandates 3.3 V design changes, while AS6C1008-35PCN provides same-speed 128K capacity at higher standby draw - neither matches the unique 2 V data retention and 0.1 µA CMOS standby of IDT6116LA35SOG8.

Availability

IDT6116LA35SOG8 is available at Aetrix Electronics and suitable for industrial automation, medical diagnostics, and avionics subsystems requiring stable component supply, long-lifecycle support, and proven reliability in extended temperature operation.

Supply support for IDT6116LA35SOG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in timing, memory, and interface solutions before its acquisition by Renesas in 2019. It pioneered high-reliability CMOS SRAMs for military and industrial markets.

IDT6116LA35SOG8 belongs to the IDT6116SA/LA family of low-power static RAMs designed specifically for battery-backed, mission-critical embedded systems where data integrity during power loss is mandatory.

FAQ

What is the maximum operating temperature range for IDT6116LA35SOG8?

IDT6116LA35SOG8 is rated for industrial temperature operation from –45°C to +85°C. This range is explicitly defined in the ordering information and DC electrical characteristics tables, and it supports sustained bias conditions up to +85°C without derating. The device does not support commercial (0°C to +70°C) or military (–55°C to +125°C) grades - its marking and specification sheet confirm industrial-grade qualification only.

Does IDT6116LA35SOG8 require external refresh circuitry?

No, IDT6116LA35SOG8 is a fully static RAM and requires no clocks or refresh cycles. Its internal circuitry maintains data indefinitely as long as VCC remains within specification and CS is asserted appropriately. This eliminates timing-critical refresh overhead in microcontroller-based systems and simplifies PCB layout by removing associated timing constraints.

What is the data retention current of IDT6116LA35SOG8 at 2 V?

IDT6116LA35SOG8 draws ≤1.5 µA typical and ≤30 µA maximum (MIL grade) for data retention at VCC = 2.0 V across the full industrial temperature range. This value is specified in Table 10 (Data Retention Characteristics) and enables multi-year data hold using standard lithium coin cells without supplemental regulation or charging circuitry.

Can IDT6116LA35SOG8 be used with 3.3 V logic systems?

IDT6116LA35SOG8 is a 5 V-only device with TTL-compatible inputs (VIH ≥ 2.2 V) and outputs (VOH ≥ 2.4 V at I_OH = –4 mA). While its inputs accept 3.3 V as valid HIGH, its outputs cannot drive 3.3 V logic reliably without level translation due to VOL = 0.4 V and VOH < 3.3 V. Direct interface is not recommended unless the receiving device has 5 V-tolerant inputs and accepts TTL voltage thresholds.

What package type does IDT6116LA35SOG8 use?

IDT6116LA35SOG8 uses a 24-pin Small Outline IC (SOIC) package with gull-wing leads and 300 mil body width (designated SO24-2 in IDT documentation). The "G8" suffix in the part number confirms this packaging variant, and the pin configuration diagram shows standard 24-pin DIP-compatible layout with pins 1–12 on one side and 13–24 on the other.