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Renesas IDT6116LA35SOGI
- Part No.:
- IDT6116LA35SOGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116LA35SOGI.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,353
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Product details
Overview
IDT6116LA35SOGI from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 35 ns access time, TTL-compatible I/O, and battery-backed data retention down to 2 V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous static operation without clocks or refresh, and is packaged in 24-pin SOIC. Used in embedded controllers, instrumentation, and legacy industrial systems requiring nonvolatile SRAM backup.
For engineers reviewing the IDT6116LA35SOGI datasheet, IDT6116LA35SOGI pinout, IDT6116LA35SOGI application, or IDT6116LA35SOGI equivalent, key selection criteria include standby current (≤25 mA TTL-level, ≤0.1 mA CMOS-level), data retention at 2 V, 24-pin SOIC footprint compatibility, and industrial-temperature reliability without refresh circuitry.
Technical Context
The IDT6116LA35SOGI implements fully static asynchronous memory architecture with independent chip select (CS), output enable (OE), and write enable (WE) controls. Its dual standby modes-TTL-level (ISB) and CMOS-level (ISB1)-enable system-level power optimization based on control signal voltage thresholds.
It uses high-reliability CMOS process with alpha-particle soft-error immunity and direct TTL interface compatibility (VIH = 2.2 V min, VIL = 0.8 V max). The LA variant specifically enables battery retention via 2 V VCC support and sub-microwatt ISB1 current (0.1 µA typ), distinguishing it from SA variants.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), single-port asynchronous SRAM |
| Access Time (tAA) | 35 ns max - defines minimum address-to-data valid delay in read cycles |
| Supply Voltage (VCC) | 4.5 V to 5.5 V - standard 5 V TTL-compatible rail; 2.0 V supported only for data retention |
| Standby Current (ISB1) | 0.1 µA max at CMOS-level CS - enables ultra-low-power battery backup mode |
| Data Retention Voltage | 2.0 V min - maintains stored data without refresh when main VCC is removed |
| Operating Temperature | –45°C to +85°C - qualified for industrial environments per ordering code "I" |
| Package | 24-pin SOIC (SO24-2), 300-mil width - surface-mount compatible with JEDEC MS-012 |
Pinout & Package
24-pin Small Outline Integrated Circuit (SOIC), 300-mil body width, gull-wing lead form (JEDEC MO-012AC), RoHS-compliant lead finish. Pin 1 marked by notch or dot; pin numbering counterclockwise from top-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit binary address bus selecting one of 2K memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel interface for read data output or write data input; high-impedance when disabled |
| CS | Chip Select | Active-low enable; drives device into full standby (ISB/ISB1) when HIGH |
| WE | Write Enable | Active-low control for write operations; must be LOW with CS LOW to initiate write |
| OE | Output Enable | Active-low control for output drivers; allows read data to appear on I/O pins |
| VCC | Power Supply | +5 V nominal supply; 2 V minimum for data retention only |
| GND | Ground Reference | 0 V return path for all signals and power; decoupling required near pin 12 |
Key Features
| Feature | Design Value |
|---|---|
| Battery-backed data retention | Operates at 2 V VCC with ≤0.9 µA ISB1 current - enables long-term memory hold using coin-cell backup |
| Dual standby power modes | TTL-level CS (ISB ≤25 mA) and CMOS-level CS (ISB1 ≤0.1 µA) - selectable via control logic threshold |
| Fully static operation | No clocks, no refresh cycles required - simplifies timing design and eliminates dynamic power overhead |
| TTL-compatible interface | VIH ≥2.2 V, VIL ≤0.8 V, VOH ≥2.4 V, VOL ≤0.4 V - direct connection to 5 V microcontrollers and FPGAs |
| Industrial temperature qualification | –45°C to +85°C operation with MIL-STD-883 Class B reliability testing - suitable for harsh environmental deployment |
Applications
| Industrial PLC Data Buffer | Medical Instrumentation Memory |
|---|---|
|
Use Scenario: Storing real-time sensor calibration tables and fault logs in programmable logic controllers during power interruption. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer retaining critical configuration data while main power is cycled or backed up. Use Value: Eliminates need for external EEPROM write cycles and wear leveling; 2 V retention ensures >10-year data hold with CR2032 battery. |
Use Scenario: Holding patient parameter history and device self-test results in portable ECG monitors between clinical sessions. IC Role / Device Role / Timing Role: Low-power static RAM providing instant-access storage with zero refresh latency during battery-only operation. Use Value: Sub-microwatt ISB1 current extends battery life beyond 200 hours per charge; 35 ns access supports real-time waveform buffering. |
| Avionics Maintenance Log | Legacy Industrial HMI Cache |
|
Use Scenario: Recording flight-critical maintenance timestamps and diagnostic codes in airborne data acquisition units. IC Role / Device Role / Timing Role: Radiation-hardened CMOS SRAM preserving integrity of mission-critical logs under thermal and electrical stress. Use Value: Alpha-particle immunity and –45°C to +85°C rating ensure reliable operation in unpressurized avionics bays. |
Use Scenario: Caching display refresh data and user input buffers in factory-floor HMIs running on aging 8-bit microcontrollers. IC Role / Device Role / Timing Role: Pin-compatible drop-in replacement for obsolete 6116-family SRAMs in legacy 5 V bus architectures. Use Value: Direct TTL compatibility avoids level-shifter redesign; 24-pin SOIC fits existing PCB footprints without layout change. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 32K × 8-bit, 45 ns access, 3 V core (with 5 V tolerant I/O), 48-pin TSOP | Higher density and lower voltage; requires PCB redesign due to pin count and package mismatch | Select only if upgrading capacity and migrating to 3 V systems; not pin-compatible with IDT6116LA35SOGI |
| AS6C1008-35TIN | 128K × 8-bit, 35 ns access, 5 V only, 28-pin SOIC | 4× memory depth, same speed and voltage, but 28-pin vs. 24-pin - incompatible footprint | Use only for new designs where board space permits larger package and higher capacity is needed |
Compared with IDT6116LA35SOGI, CY62167EV30LL-45ZSXIT offers greater density and modern low-voltage operation but demands layout revision, while AS6C1008-35TIN matches speed and voltage yet requires 4 extra pins and cannot fit the 24-pin SOIC footprint - neither serves as a drop-in replacement.
Availability
IDT6116LA35SOGI is available at Aetrix Electronics and suitable for industrial automation, medical instrumentation, and avionics maintenance systems requiring stable component supply, long-lifecycle support, and guaranteed industrial-temperature performance.
Supply support for IDT6116LA35SOGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.
IDT6116LA35SOGI belongs to IDT's legacy high-reliability static RAM product line, designed specifically for industrial and military applications demanding zero-refresh operation, battery backup, and extended temperature resilience.
FAQ
What is the maximum operating temperature range for IDT6116LA35SOGI?
IDT6116LA35SOGI is rated for industrial temperature operation from –45°C to +85°C, as confirmed by its ordering code "I" and compliance with industrial-grade qualification testing. This range exceeds commercial-grade parts (0°C to +70°C) and supports deployment in factory-floor controllers, outdoor instrumentation, and transportation electronics where ambient heat buildup occurs.
Does IDT6116LA35SOGI require external refresh circuitry?
No, IDT6116LA35SOGI is a fully static RAM and requires no clocks or refresh cycles. Its internal CMOS latches retain data indefinitely as long as VCC remains within specification and CS is asserted appropriately. This eliminates timing-critical refresh logic and reduces system-level power and complexity compared to DRAM solutions.
Can IDT6116LA35SOGI retain data on a 2 V battery alone?
Yes, IDT6116LA35SOGI supports true battery backup operation at 2.0 V VCC, drawing only 0.1 µA to 0.9 µA in full standby (ISB1 mode). This enables multi-year data retention using standard lithium coin cells, making it ideal for applications like PLC event logging or medical device calibration storage where main power may be intermittent.
What package type does IDT6116LA35SOGI use?
IDT6116LA35SOGI uses a 24-pin Small Outline Integrated Circuit (SOIC) package, 300-mil body width (SO24-2), with gull-wing leads compliant with JEDEC MO-012AC. It is surface-mount compatible, RoHS-compliant, and matches footprint standards used across legacy industrial PCBs.
How does the standby current differ between TTL-level and CMOS-level chip select on IDT6116LA35SOGI?
IDT6116LA35SOGI provides two standby modes: ISB (≤25 mA) activates when CS ≥2.0 V (TTL HIGH), while ISB1 (≤0.1 µA) engages when CS ≥VCC – 0.2 V (CMOS HIGH). Designers use ISB1 for battery backup scenarios and ISB for fast wake-up from system sleep - both reduce power without losing data integrity.
IDT6116LA35SOGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116LA35SOGI FAQ
1.How can I place an order for IDT6116LA35SOGI through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116LA35SOGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116LA35SOGI reliable?
The price and inventory of IDT6116LA35SOGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116LA35SOGI is usually 5 days.
3.What payment methods are accepted for IDT6116LA35SOGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116LA35SOGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116LA35SOGI?
IDT6116LA35SOGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116LA35SOGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116LA35SOGI?
For technical support, including IDT6116LA35SOGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116LA35SOGI requirements.
6.How does Aetrix verify that IDT6116LA35SOGI is sourced from the original manufacturer or authorized distributors?
All IDT6116LA35SOGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116LA35SOGI meets industry standards.
7.What is the process for return or replacement of IDT6116LA35SOGI?
All IDT6116LA35SOGI units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116LA35SOGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116LA35SOGI part is unused and in its original packaging.
Return procedure for IDT6116LA35SOGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116LA35SOGI Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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AT24C08C-STUM-T
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