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Renesas IDT6116LA35SOGI8
- Part No.:
- IDT6116LA35SOGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116LA35SOGI8.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,181
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Product details
Overview
IDT6116LA35SOGI8 from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 35 ns access time, TTL-compatible I/O, and battery-backed data retention down to 2V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous read/write cycles without clocks or refresh, and is packaged in 24-pin SOIC for high-density PCB layouts - used in legacy industrial controllers and embedded instrumentation requiring nonvolatile SRAM holdover.
For engineers reviewing the IDT6116LA35SOGI8 datasheet, IDT6116LA35SOGI8 pinout, IDT6116LA35SOGI8 application, or IDT6116LA35SOGI8 equivalent, key selection criteria include standby current (≤30 µA at CMOS-level chip select), guaranteed 35 ns tAA/tACS timing over full temperature range, 2V data retention capability, and compatibility with 5V ±10% supply and TTL logic thresholds.
Technical Context
This device implements a fully static, asynchronous memory array using advanced CMOS process technology to eliminate refresh requirements and minimize soft-error susceptibility. Its control architecture uses independent Chip Select (CS), Output Enable (OE), and Write Enable (WE) signals to manage read, write, and high-impedance output states without external timing constraints.
The IDT6116LA35SOGI8 integrates address decoding for 11-bit address inputs (A0–A10), bidirectional 8-bit data I/O (I/O0–I/O7), and power management circuitry enabling two standby modes: TTL-level (ISB ≤30 mA) and CMOS-level (ISB1 ≤0.9 µA). Data retention at 2V is exclusive to the LA variant and verified across –45°C to +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2K × 8), supporting byte-wide data bus interfacing without external demultiplexing |
| Access Time (tAA) | 35 ns max at VCC = 4.5–5.5 V, –45°C to +85°C - ensures reliable timing margin in 28 MHz bus systems |
| Standby Current (ISB1) | 0.9 µA max at VCC = 5.5 V, CMOS-level CS - enables multi-year battery backup operation |
| Data Retention Voltage | 2.0 V min - allows use of single-cell lithium or coin-cell batteries for memory holdover during main power loss |
| I/O Compatibility | TTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive (VOH ≥ 2.4 V @ –4 mA, VOL ≤ 0.4 V @ 8 mA) |
| Operating Supply | 5.0 V ±10%, no regulation tolerance required - simplifies power design in legacy 5V systems |
| Package | 24-pin SOIC (SO24-2), 300-mil width - compatible with standard surface-mount reflow profiles and automated assembly |
Pinout & Package
Package: 24-pin Small Outline Integrated Circuit (SOIC), gull-wing lead form, 300-mil body width (SO24-2), RoHS-compliant matte tin lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit parallel address bus; latched on CS/WE transitions - no external address latch needed |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit TTL-compatible data path; high-impedance when CS=HIGH or OE=HIGH during read, driven during write |
| CS | Chip Select | Active-low enable; asserts memory access and controls standby entry/exit - primary power gating signal |
| WE | Write Enable | Active-low write strobe; combined with CS to define write cycle window - supports WE- or CS-controlled timing modes |
| OE | Output Enable | Active-low output control; isolates data bus during reads when CS=LOW but output not required |
| VCC | Power Supply | +5V ±10% supply pin; decoupling capacitor placement critical for noise immunity in high-speed access |
| GND | Ground Reference | Signal and power ground return; requires low-inductance connection to minimize switching noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| 2V Data Retention | Retains stored data at 2.0 V VCC across full industrial temperature range - eliminates need for external backup regulators |
| CMOS-Level Standby | 0.1–0.9 µA ISB1 current when CS > VHC and inputs held valid - extends battery life by orders of magnitude vs TTL-level standby |
| No Refresh Required | Fully static architecture eliminates DRAM-style refresh circuitry, timing constraints, and associated system overhead |
| TTL-Compatible I/O | Direct interface to 5V microcontrollers, FPGAs, and ASICs without level-shifting or bus buffers |
| Military-Grade Process | Manufactured using alpha-particle-hardened CMOS - reduces soft error rate in radiation-prone environments |
Applications
| Industrial PLC Data Buffer | Avionics Sensor Log Memory |
|---|---|
|
Use Scenario: Real-time logging of analog sensor outputs in programmable logic controllers during mains power interruption. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer holding last 2K samples; retains data via onboard 2V coin cell during brownout events. Use Value: Eliminates need for external EEPROM write cycles or battery-backed NVSRAM modules - reduces BOM cost and firmware complexity. |
Use Scenario: Storing calibrated sensor coefficients and flight-critical status snapshots in airborne environmental monitoring units. IC Role / Device Role / Timing Role: High-reliability, radiation-tolerant memory for mission-critical parameter storage with guaranteed data integrity over –45°C to +85°C. Use Value: Leverages hardened CMOS process and MIL-STD-883 Class B compliance to meet DO-160E environmental stress requirements. |
| Medical Diagnostic Equipment Cache | Legacy Telecom Line Card Buffer |
|
Use Scenario: Temporary storage of waveform acquisition buffers in portable ECG analyzers between USB transfers to host PC. IC Role / Device Role / Timing Role: Low-latency (35 ns), byte-accessible SRAM interfaced directly to 8-bit microcontroller data bus. Use Value: Enables deterministic real-time capture without DMA arbitration delays - supports 20 kSPS sampling with zero dropped frames. |
Use Scenario: Configuration and statistics storage in T1/E1 line interface cards operating in telecom central offices. IC Role / Device Role / Timing Role: Industrial-temperature SOIC-packaged memory supporting hot-swap and long-term unattended operation. Use Value: SO24-2 package enables high board density in space-constrained line card designs while maintaining 35 ns timing at +85°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 512K × 16-bit, 45 ns access, 3.3 V only, no 2V retention | Higher density but incompatible voltage and retention profile; requires level translation in 5V systems | Select only if migrating to 3.3V architecture and needing larger memory footprint |
| AS6C1008-35TIN | 128K × 8-bit, 35 ns access, 5V, 2V retention supported, but industrial temp rated only to +70°C | Larger capacity and same speed, but lacks –45°C lower limit - unsuitable for extended cold-environment deployment | Acceptable for commercial-temp industrial equipment where ambient stays above 0°C |
Compared with IDT6116LA35SOGI8, CY62167EV30LL-45ZSXIT offers higher density but mandates 3.3V infrastructure and forfeits battery retention, while AS6C1008-35TIN matches speed and voltage but sacrifices low-temperature operational margin - making IDT6116LA35SOGI8 uniquely suited for ruggedized 5V systems requiring true industrial-range 2V holdover.
Availability
IDT6116LA35SOGI8 is available at Aetrix Electronics and suitable for industrial PLCs, avionics data loggers, and medical diagnostic equipment requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for IDT6116LA35SOGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF solutions for communications and computing infrastructure.
IDT6116LA35SOGI8 belongs to the IDT6116SA/LA family of high-reliability CMOS SRAMs designed specifically for legacy 5V embedded systems demanding industrial/military temperature operation and battery-backed data persistence.
FAQ
What is the maximum operating temperature range for IDT6116LA35SOGI8?
IDT6116LA35SOGI8 is rated for industrial temperature operation from –45°C to +85°C. This range is explicitly specified in the ordering information and DC electrical characteristics tables, and confirmed by its "GI" suffix designation per IDT's packaging nomenclature (G = SOIC, I = industrial temp).
Does IDT6116LA35SOGI8 support true battery backup with data retention below 5V?
Yes. IDT6116LA35SOGI8 supports data retention at VCC = 2.0 V minimum, as documented in Table 10 (Data Retention Characteristics). This feature is exclusive to the LA variant and validated across the full industrial temperature range, enabling direct coin-cell or lithium primary battery backup without voltage regulation.
What is the standby current consumption of IDT6116LA35SOGI8 under CMOS-level chip select?
IDT6116LA35SOGI8 draws ≤0.9 µA in full standby mode (ISB1) when CS exceeds VHC (VCC – 0.2 V) and all inputs are held valid. This ultra-low current enables multi-year operation on small batteries and is measured at VCC = 5.5 V, TA = +25°C per Table 8 and Table 9.
Is IDT6116LA35SOGI8 pin-compatible with other variants in the IDT6116SA/LA family?
Yes. All IDT6116SA/LA devices share identical 24-pin SOIC (SO24-2) pinout and functional assignment per Pin Description Table 1. Speed grade (e.g., 35 ns vs 45 ns) and power variant (SA vs LA) do not affect pin configuration or signal definitions - enabling drop-in replacement within same package type.
What logic family is IDT6116LA35SOGI8 compatible with for direct interfacing?
IDT6116LA35SOGI8 features fully TTL-compatible inputs and outputs: VIH ≥ 2.2 V, VIL ≤ 0.8 V, VOH ≥ 2.4 V (at –4 mA), and VOL ≤ 0.4 V (at 8 mA). It interfaces directly with 5V microcontrollers, CPLDs, and legacy logic families without level shifters or bus buffers.
IDT6116LA35SOGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116LA35SOGI8 FAQ
1.How can I place an order for IDT6116LA35SOGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116LA35SOGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116LA35SOGI8 reliable?
The price and inventory of IDT6116LA35SOGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116LA35SOGI8 is usually 5 days.
3.What payment methods are accepted for IDT6116LA35SOGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116LA35SOGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116LA35SOGI8?
IDT6116LA35SOGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116LA35SOGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116LA35SOGI8?
For technical support, including IDT6116LA35SOGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116LA35SOGI8 requirements.
6.How does Aetrix verify that IDT6116LA35SOGI8 is sourced from the original manufacturer or authorized distributors?
All IDT6116LA35SOGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116LA35SOGI8 meets industry standards.
7.What is the process for return or replacement of IDT6116LA35SOGI8?
All IDT6116LA35SOGI8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116LA35SOGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116LA35SOGI8 part is unused and in its original packaging.
Return procedure for IDT6116LA35SOGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116LA35SOGI8 Tags
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