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Renesas IDT6116LA45SO8
- Part No.:
- IDT6116LA45SO8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116LA45SO8.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,690
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Product details
Overview
IDT6116LA45SO8 from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 45 ns maximum access time, TTL-compatible I/O, and battery-backed data retention at 2V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous read/write cycles without clocks or refresh, and is packaged in 24-pin SOIC for high-density PCB layouts in embedded controllers and instrumentation systems.
For engineers reviewing the IDT6116LA45SO8 datasheet, IDT6116LA45SO8 pinout, IDT6116LA45SO8 application, or IDT6116LA45SO8 equivalent, key selection criteria include standby current (25 µA TTL-level, 0.1 µA CMOS-level), data retention capability at 2V, industrial-grade reliability, and compatibility with legacy 5V TTL bus interfaces.
Technical Context
The IDT6116LA45SO8 implements fully static asynchronous memory architecture with independent chip select (CS), output enable (OE), and write enable (WE) controls. Its dual standby modes-TTL-level (ISB = 25 µA) and CMOS-level (ISB1 = 0.1 µA)-enable system-level power optimization during idle states.
It features address-access timing (tAA ≤ 45 ns), read cycle time (tRC = 45 ns), and write pulse width (tWP ≥ 25 ns), all guaranteed over –45°C to +85°C. Input leakage (|ILI| ≤ 5 µA) and output leakage (|ILO| ≤ 2 µA) meet industrial reliability requirements, and the device retains data at VCC = 2.0 V with ICCDR ≤ 30 µA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2,048 × 8), enabling byte-wide data storage without external multiplexing |
| Access Time | 45 ns max (tAA, tACS), supporting 22.2 MHz burst read/write in synchronous systems |
| Supply Voltage | 5.0 V ±10%, compatible with standard 5V TTL logic rails and legacy microcontroller buses |
| Standby Current | 25 µA (TTL-level CS), 0.1 µA (CMOS-level CS), reducing idle power in battery-backed systems |
| Data Retention | 2.0 V minimum VCC, allowing operation from backup coin cells or low-voltage hold circuits |
| Operating Temp | –45°C to +85°C, qualified for industrial control, test equipment, and automotive under-hood modules |
| I/O Compatibility | TTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive (VOH ≥ 2.4 V, VOL ≤ 0.4 V at 8 mA) |
Pinout & Package
Package: 24-pin SOIC (SO24-2), 300-mil width, gull-wing lead form, RoHS-compliant plastic body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus accepting 0–2047 row/column selections; no internal latching required |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit TTL-compatible data path; high-impedance when CS or OE inactive |
| CS | Chip Select | Active-low enable; drives device into full standby (ISB1 = 0.1 µA) when held HIGH at CMOS level |
| OE | Output Enable | Active-low control for output buffer; allows read-only access while WE remains HIGH |
| WE | Write Enable | Active-low write strobe; initiates write cycle only when CS is LOW and OE is HIGH |
| VCC | Power Supply | +5 V ±10% supply; powers core logic and I/O buffers; supports 2V data retention mode |
| GND | Ground Reference | Signal and power return; decoupling capacitor placement critical for AC noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Battery-backed data retention | Operates at 2.0 V with ICCDR ≤ 30 µA, enabling years of nonvolatile storage on coin-cell backup |
| Dual standby power modes | TTL-level (25 µA) and CMOS-level (0.1 µA) standby, selectable via CS voltage threshold |
| No clock or refresh required | Fully static design eliminates timing controller overhead and simplifies FPGA/microcontroller interface |
| Military/industrial qualification | MIL-STD-883 Class B compliant; tested for alpha-particle soft-error immunity and extended thermal cycling |
| TTL-compatible I/O | Direct interface to 5V microcontrollers, CPLDs, and legacy bus architectures without level-shifting |
Applications
| Industrial PLC Memory Buffer | Automotive ECU Parameter Storage |
|---|---|
Use Scenario: Storing real-time sensor calibration tables and fault logs in programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer holding configuration data between power cycles; accessed asynchronously by ARM Cortex-M4 host MCU. Use Value: 2V data retention enables seamless parameter persistence during brownouts; 45 ns access supports deterministic scan-cycle timing at 20 kHz update rates. | Use Scenario: Holding adaptive fuel trim values and diagnostic trouble codes in engine control units exposed to under-hood thermal stress. IC Role / Device Role / Timing Role: Low-power static RAM providing fast, reliable read/write access to runtime-critical engine parameters during active operation. Use Value: Industrial temperature rating (–45°C to +85°C) ensures functional integrity across ambient extremes; 0.1 µA CMOS standby minimizes parasitic drain on vehicle battery. |
| Test Equipment Configuration Store | Medical Device Setup Memory |
Use Scenario: Saving instrument-specific setup profiles (voltage ranges, sampling rates, trigger conditions) in benchtop oscilloscopes and signal generators. IC Role / Device Role / Timing Role: Byte-addressable SRAM interfaced via parallel bus to FPGA-based control logic for rapid profile recall. Use Value: 45 ns tAA enables sub-50 ns configuration reloads; TTL compatibility avoids interface glue logic in legacy 5V designs. | Use Scenario: Retaining user-defined therapy parameters and safety limits in portable infusion pumps and patient monitors. IC Role / Device Role / Timing Role: Battery-backed memory preserving critical settings during AC power loss or battery swap events. Use Value: Guaranteed 2V data retention meets IEC 62304 power-fail safety requirements; 0.1 µA ISB1 extends backup battery life beyond 5 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 3.3V core, 45 ns access, 2M × 8 organization, SOIC-32 package | Requires level-shifting for 5V systems; larger density but incompatible pinout and voltage domain | Select only if migrating to 3.3V architecture and requiring >16K capacity |
| AS6C1008-45ZIN | 5V, 45 ns, 128K × 8, SOIC-28, higher ICC1 (35 mA vs. 75 mA) | Pin-compatible 24-pin variant unavailable; SOIC-28 requires PCB redesign | Consider for cost-sensitive volume production where footprint change is acceptable |
Compared with CY62167EV30LL-45ZSXIT and AS6C1008-45ZIN, the IDT6116LA45SO8 uniquely delivers 2V data retention, industrial temperature support, and true 24-pin SOIC pinout in a 5V TTL-native interface-making it irreplaceable in legacy-reliant, battery-backed, and thermally demanding applications.
Availability
IDT6116LA45SO8 is available at Aetrix Electronics and suitable for industrial automation, automotive electronics, and medical instrumentation requiring stable component supply, long-term lifecycle support, and guaranteed data retention under brownout conditions.
Supply support for IDT6116LA45SO8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory, and interface solutions for communications, computing, and industrial markets.
The IDT6116LA series was designed specifically for high-reliability, low-power static RAM applications in harsh environments-emphasizing data retention, wide temperature operation, and TTL interoperability in legacy and upgrade systems.
FAQ
What is the guaranteed data retention voltage for IDT6116LA45SO8?
IDT6116LA45SO8 guarantees data retention down to 2.0 V (VDR = 2.0 V), verified across its full industrial temperature range (–45°C to +85°C). At this voltage, typical data retention current (ICCDR) is ≤30 µA, enabling multi-year backup operation from standard 2V lithium batteries or supercapacitor hold-up circuits without external regulation.
Does IDT6116LA45SO8 require a clock or refresh signal?
No, IDT6116LA45SO8 is a fully static RAM and requires no clock, refresh, or periodic access to retain data. Its CMOS latch-based memory cells maintain state indefinitely as long as VCC remains within specification and CS is held HIGH in standby mode. This eliminates timing controller complexity and reduces system power management overhead.
What is the difference between ISB and ISB1 current specifications for IDT6116LA45SO8?
IDT6116LA45SO8 defines two standby current modes: ISB (25 µA max) activates when CS is driven above VIH (≥2.2 V), and ISB1 (0.1 µA max) engages only when CS exceeds VHC (VCC – 0.2 V) and all inputs are at valid TTL levels. ISB1 enables ultra-low-power battery backup; ISB suits simpler TTL-level control schemes where precise voltage margining is impractical.
Can IDT6116LA45SO8 be used in a 3.3V system?
IDT6116LA45SO8 is specified for 5.0 V ±10% operation (4.5–5.5 V) and is not rated for 3.3V supply. While some units may function at 3.3V, VIH and VOL thresholds will violate TTL compatibility, and data retention at 2V is only guaranteed with 5V nominal supply. For 3.3V systems, consider modern low-voltage SRAMs such as ISSI IS61WV102416BLL.
Is IDT6116LA45SO8 pin-compatible with other 24-pin SOIC SRAMs like the HM6116?
IDT6116LA45SO8 uses the industry-standard 24-pin SOIC pinout for 2K × 8 SRAMs (A0–A10, I/O0–I/O7, CS, OE, WE, VCC, GND), matching HM6116, MK6116, and most second-source 16K-bit SRAMs. However, timing parameters (e.g., tWP = 25 ns vs. HM6116's 100 ns) and standby current behavior differ significantly-system validation is required before drop-in replacement.
IDT6116LA45SO8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116LA45SO8 FAQ
1.How can I place an order for IDT6116LA45SO8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116LA45SO8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116LA45SO8 reliable?
The price and inventory of IDT6116LA45SO8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116LA45SO8 is usually 5 days.
3.What payment methods are accepted for IDT6116LA45SO8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116LA45SO8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116LA45SO8?
IDT6116LA45SO8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116LA45SO8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116LA45SO8?
For technical support, including IDT6116LA45SO8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116LA45SO8 requirements.
6.How does Aetrix verify that IDT6116LA45SO8 is sourced from the original manufacturer or authorized distributors?
All IDT6116LA45SO8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116LA45SO8 meets industry standards.
7.What is the process for return or replacement of IDT6116LA45SO8?
All IDT6116LA45SO8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116LA45SO8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116LA45SO8 part is unused and in its original packaging.
Return procedure for IDT6116LA45SO8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116LA45SO8 Tags
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