My Inquiry
My Account
Renesas IDT6116LA45SOG
- Part No.:
- IDT6116LA45SOG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116LA45SOG.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,910
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IDT6116LA45SOG from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 45 ns access time, TTL-compatible I/O, and battery-backed data retention at 2 V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous static operation without clocks or refresh, and is packaged in 24-pin SOIC. Used in embedded controllers, instrumentation, and legacy industrial systems requiring nonvolatile SRAM backup.
For engineers reviewing the IDT6116LA45SOG datasheet, IDT6116LA45SOG pinout, IDT6116LA45SOG application, or IDT6116LA45SOG equivalent, key selection criteria include standby current (20 µA TTL-level, 0.1 µA CMOS-level), data retention capability at 2 V, 24-pin SOIC footprint compatibility, and industrial-grade reliability per MIL-STD-883 Class B test methods.
Technical Context
The IDT6116LA45SOG implements fully static asynchronous memory architecture with no clock or refresh circuitry. Its control logic uses independent chip select (CS), output enable (OE), and write enable (WE) signals to manage read/write/standby states via a truth table-defined mode matrix.
It features dual standby modes: TTL-level standby (ISB = 20 µA max at VCC = 5.5 V) and full CMOS-level standby (ISB1 = 0.1 µA max), plus guaranteed 2 V data retention (ICCDR ≤ 1.5 µA typical at 2.0 V). All DC and AC parameters are specified over –45°C to +85°C for industrial grade.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2,048 × 8), enabling byte-wide data bus interfacing without external demultiplexing |
| Access Time (tAA) | 45 ns max - defines minimum address-to-valid-data delay in read cycles under industrial conditions |
| Standby Current (ISB) | 20 µA max (TTL-level CS high) - enables low-power sleep in battery-backed systems |
| Data Retention Voltage | 2.0 V min - allows operation from single-cell lithium or backup coin cell without regulation |
| I/O Compatibility | TTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive (VOH ≥ 2.4 V @ –4 mA, VOL ≤ 0.4 V @ 8 mA) |
| Operating Temperature | –45°C to +85°C - qualified for industrial environments including factory automation and telecom infrastructure |
| Package | 24-pin SOIC (SO24-2), 300-mil width - surface-mount compatible with standard reflow profiles and IPC-7351 footprints |
Pinout & Package
Package: 24-pin Small Outline Integrated Circuit (SOIC), 300-mil body width, gull-wing leads (JEDEC MS-012AC), RoHS-compliant lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit binary address bus selecting one of 2,048 memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel interface supporting simultaneous read/write with tristate control via OE/WE |
| CS | Chip Select | Active-low global enable; drives device into low-power standby when high |
| WE | Write Enable | Active-low signal controlling write cycle initiation; latches data on falling edge |
| OE | Output Enable | Active-low signal enabling output drivers during read; high-Z when deasserted |
| VCC | Power Supply | +5.0 V ±10% supply; powers core logic and I/O buffers |
| GND | Ground Reference | 0 V reference for all inputs, outputs, and internal circuitry |
Key Features
| Feature | Design Value |
|---|---|
| Low-power standby modes | 20 µA (TTL-level CS) and 0.1 µA (CMOS-level CS) - reduces system power budget in always-on instrumentation |
| Battery backup data retention | Operates down to 2.0 V with ≤1.5 µA retention current - eliminates need for external voltage supervisor or regulator |
| Fully static asynchronous design | No clocks, no refresh, no timing constraints beyond tRC/tAA - simplifies controller interface and PCB layout |
| TTL-compatible I/O | Direct connection to legacy microcontrollers (e.g., 8051, Z80) and FPGAs without level-shifting |
| MIL-STD-883 Class B compliance | Qualified for high-reliability industrial use with burn-in, temperature cycling, and hermeticity testing |
Applications
| Industrial PLC Memory Buffer | Legacy Telecom Line Card Cache |
|---|---|
Use Scenario: Real-time I/O status buffering in programmable logic controllers where firmware must retain volatile state during brief AC loss. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-access scratchpad memory with seamless transition to 2 V battery backup. Use Value: Eliminates need for external EEPROM write cycles or supercapacitor hold-up, reducing BOM count and failure points. |
Use Scenario: Configuration storage in T1/E1 line interface cards requiring fast read access and immunity to power glitches. IC Role / Device Role / Timing Role: Byte-addressable static RAM serving as shadow RAM for FPGA configuration registers and channel mapping tables. Use Value: 45 ns tAA ensures sub-100 ns register updates during live traffic, avoiding packet loss during hot-swap events. |
| Medical Diagnostic Equipment FIFO | Avionics Sensor Data Logger |
Use Scenario: Temporary waveform storage in portable ultrasound units where battery life and data integrity are critical. IC Role / Device Role / Timing Role: High-reliability SRAM acting as acquisition buffer between ADC and ARM processor, retaining data during sleep mode. Use Value: 0.1 µA ISB1 enables multi-week standby on coin cell; 2 V retention avoids brownout-induced corruption. |
Use Scenario: Black-box flight data recording in UAVs operating across –40°C to +85°C ambient with intermittent GPS power. IC Role / Device Role / Timing Role: Industrial-grade SRAM capturing sensor timestamps and telemetry with guaranteed retention during engine start transients. Use Value: MIL-STD-883 Class B qualification ensures operation under vibration, thermal shock, and EMI common in airframes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 512K × 16-bit, 3.3 V only, 45 ns access, 32-pin TSOP-II - higher density but incompatible voltage and pinout | Requires level-shifting and PCB redesign; suited for modern 3.3 V systems, not drop-in replacement | Select only if upgrading system voltage and memory bandwidth; not suitable for direct IDT6116LA45SOG substitution |
| AS6C1008-45ZIN | 128K × 8-bit, 5 V, 45 ns, 28-pin SOIC - larger capacity, same voltage, but 4-pin wider package and different pin mapping | Needs board layout revision due to 28-pin vs. 24-pin footprint and relocated A10/WE/OE pins | Consider for capacity expansion where mechanical redesign is acceptable; not pin-compatible |
Compared with IDT6116LA45SOG, CY62167EV30LL-45ZSXIT offers greater density but mandates 3.3 V operation and new layout, while AS6C1008-45ZIN provides 8× capacity at 5 V but requires 28-pin routing - neither supports the original's 2 V data retention or 24-pin SOIC fit.
Availability
IDT6116LA45SOG is available at Aetrix Electronics and suitable for industrial automation, legacy telecom infrastructure, and medical diagnostics requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature performance.
Supply support for IDT6116LA45SOG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory, and interface solutions for communications, computing, and industrial markets.
IDT6116LA45SOG belongs to IDT's legacy CMOS static RAM product line, designed specifically for industrial and military applications demanding high reliability, low-power standby, and battery-backed data retention without external support circuitry.
FAQ
What is the maximum operating temperature range for IDT6116LA45SOG?
IDT6116LA45SOG is rated for industrial temperature operation from –45°C to +85°C. This range is validated per manufacturer specifications and supports deployment in factory-floor controllers, outdoor telecom cabinets, and transportation electronics where ambient extremes are expected. The device does not support commercial (0°C to +70°C) or military (–55°C to +125°C) grades - only the industrial variant is embodied in the IDT6116LA45SOG suffix.
Does IDT6116LA45SOG require an external clock or refresh signal?
No, IDT6116LA45SOG is a fully static RAM and requires no clock, refresh, or periodic access to retain data. Its asynchronous design relies solely on address, CS, WE, and OE timing - eliminating timing-critical controller overhead and simplifying integration with microcontrollers lacking dedicated SRAM interfaces. This behavior is inherent to the IDT6116LA45SOG architecture and confirmed in its functional description and truth table.
Can IDT6116LA45SOG retain data at 2.0 V, and what is the typical current draw in that mode?
Yes, IDT6116LA45SOG guarantees data retention at VCC = 2.0 V, a feature exclusive to the LA (low-power) version. In this mode, typical ICCDR is 0.5 µA at 2.0 V and 25°C, with a maximum of 1.5 µA across temperature. This enables direct connection to lithium primary cells or backup batteries without regulators - a core design attribute of the IDT6116LA45SOG family.
What package type does IDT6116LA45SOG use, and is it RoHS-compliant?
IDT6116LA45SOG uses a 24-pin SOIC (Small Outline Integrated Circuit) package, specifically the 300-mil width gull-wing variant designated SO24-2 in IDT documentation. It is RoHS-compliant with lead-free terminations and meets JEDEC standard MS-012AC dimensions. This package enables automated SMT assembly and is compatible with IPC-7351 land patterns used in industrial PCB designs.
How does the standby current of IDT6116LA45SOG compare between TTL-level and CMOS-level chip select?
IDT6116LA45SOG offers two standby modes: ISB = 20 µA max when CS > VIH (TTL-high threshold), and ISB1 = 0.1 µA max when CS > VHC (CMOS-high threshold, ~VCC – 0.2 V). The latter requires stricter control of the CS signal but delivers 200× lower current - critical for ultra-low-power battery backup. Both values are measured at VCC = 5.5 V and are guaranteed across the industrial temperature range for IDT6116LA45SOG.
IDT6116LA45SOG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116LA45SOG FAQ
1.How can I place an order for IDT6116LA45SOG through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116LA45SOG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116LA45SOG reliable?
The price and inventory of IDT6116LA45SOG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116LA45SOG is usually 5 days.
3.What payment methods are accepted for IDT6116LA45SOG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116LA45SOG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116LA45SOG?
IDT6116LA45SOG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116LA45SOG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116LA45SOG?
For technical support, including IDT6116LA45SOG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116LA45SOG requirements.
6.How does Aetrix verify that IDT6116LA45SOG is sourced from the original manufacturer or authorized distributors?
All IDT6116LA45SOG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116LA45SOG meets industry standards.
7.What is the process for return or replacement of IDT6116LA45SOG?
All IDT6116LA45SOG units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116LA45SOG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116LA45SOG part is unused and in its original packaging.
Return procedure for IDT6116LA45SOG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116LA45SOG Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
