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Renesas IDT6116LA45SOG8
- Part No.:
- IDT6116LA45SOG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116LA45SOG8.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,068
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Product details
Overview
IDT6116LA45SOG8 from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 45 ns maximum access time, TTL-compatible I/O, and battery-backed data retention at 2V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous static operation without clocks or refresh, and is packaged in 24-pin SOIC. Used in embedded controllers and legacy instrumentation requiring nonvolatile SRAM backup.
For engineers reviewing the IDT6116LA45SOG8 datasheet, IDT6116LA45SOG8 pinout, IDT6116LA45SOG8 application, or IDT6116LA45SOG8 equivalent, key selection criteria include standby current (≤20 µA at CMOS-level chip deselect), data retention capability (2V min.), industrial-temperature reliability, and pin-compatible migration path from earlier IDT6116LA variants.
Technical Context
The IDT6116LA45SOG8 implements fully static asynchronous memory architecture with independent chip select (CS), output enable (OE), and write enable (WE) controls. Its dual-power-mode design enables TTL-level standby (ISB ≤ 20 mA) and ultra-low CMOS-level full standby (ISB1 ≤ 0.9 µA), enabling battery backup operation.
It features 11 address inputs (A0–A10), 8 bidirectional data lines (I/O0–I/O7), and standard control logic supporting read, write, and high-impedance tri-state modes per JEDEC-compliant truth table. All DC and AC parameters-including tAA = 45 ns, tRC = 45 ns, and tOE = 25 ns-are guaranteed over –45°C to +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2,048 × 8), enabling byte-wide data storage without external multiplexing |
| Access Time (tAA) | 45 ns max - defines minimum address-to-valid-data delay in read cycles |
| Supply Voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails; no regulation required |
| Standby Current (ISB1) | 0.9 µA max at CMOS-level CS - enables multi-year battery retention from 2V source |
| Data Retention Voltage | 2.0 V min - allows use of single-cell lithium or coin-cell backup without voltage boosting |
| Operating Temperature | –45°C to +85°C - qualified for industrial environments including factory automation and telecom infrastructure |
| I/O Compatibility | TTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive (VOH ≥ 2.4 V, VOL ≤ 0.4 V) - direct interface with 5V microcontrollers |
Pinout & Package
Package: 24-pin Small Outline IC (SOIC), gull-wing lead form, 300-mil body width (SO24-2), RoHS-compliant lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit binary address bus selecting one of 2,048 memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel interface; high-impedance when CS or OE inactive |
| CS | Chip Select | Active-low enable; forces standby mode (ISB1) when HIGH, enabling battery retention |
| WE | Write Enable | Active-low control for write cycles; must be LOW concurrent with CS LOW to store data |
| OE | Output Enable | Active-low control for read output drivers; decouples data bus when HIGH |
| VCC | Power Supply | +5 V supply pin; powers core logic and I/O buffers |
| GND | Ground Reference | 0 V reference for all signals and internal circuitry |
Key Features
| Feature | Design Value |
|---|---|
| Battery-backed data retention | Operates down to 2.0 V with ICCDR ≤ 30 µA - supports long-term memory preservation during main power loss |
| Ultra-low full-standby current | ISB1 ≤ 0.9 µA at VCC = 5 V - minimizes battery drain in always-on backup mode |
| TTL-compatible interface | VIH/VIL and VOH/VOL meet TTL specs - eliminates level-shifting in legacy 5V systems |
| Fully static operation | No clocks or refresh required - simplifies timing design and reduces system overhead |
| Military-grade process | CMOS fabrication with alpha-particle soft-error immunity - enhances reliability in harsh EMI environments |
Applications
| Industrial PLC Data Buffer | Legacy Telecom Line Card Cache |
|---|---|
|
Use Scenario: Stores real-time I/O state and configuration registers in programmable logic controllers during power interruption. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer maintaining critical runtime data without external NVRAM or EEPROM write cycles. Use Value: Enables instant recovery after brownout using 2V coin-cell backup, eliminating boot-time reinitialization delays. |
Use Scenario: Caches protocol stack variables and call setup tables in T1/E1 line interface units operating in temperature-variable central office cabinets. IC Role / Device Role / Timing Role: High-reliability, low-latency (45 ns) memory for deterministic real-time packet processing. Use Value: Industrial-temperature rating (–45°C to +85°C) and MIL-STD-883 process ensure uptime in uncontrolled telecom environments. |
| Medical Diagnostic Equipment Log Memory | Avionics Sensor Calibration Storage |
|
Use Scenario: Retains fault logs and calibration history in portable ultrasound and ECG devices between clinical sessions. IC Role / Device Role / Timing Role: Low-power SRAM providing persistent storage without wear-out mechanisms inherent in flash. Use Value: 0.9 µA ISB1 current extends battery life >5 years on CR2032, meeting IEC 62304 safety-critical data retention requirements. |
Use Scenario: Stores sensor offset/gain coefficients and self-test results in flight-critical inertial measurement units (IMUs). IC Role / Device Role / Timing Role: Radiation-tolerant CMOS SRAM used for mission-critical parameter storage where EEPROM write endurance is insufficient. Use Value: Alpha-particle immunity and Class B MIL-STD-883 qualification support DO-254 compliance for airborne hardware. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 512K × 16-bit, 3.3 V core, 45 ns access, SOIC-44 package | Higher density and lower voltage; requires PCB redesign and level translation | Choose for new designs needing higher capacity and modern 3.3 V rail compatibility |
| AS6C1008-45ZIN | 128K × 8-bit, 5 V, 45 ns, SOIC-28 package; no 2V retention | Larger memory but lacks battery backup; industrial temp only (–40°C to +85°C) | Choose when extended data retention is unnecessary and board space permits SOIC-28 footprint |
Compared with IDT6116LA45SOG8, CY62167EV30LL-45ZSXIT offers greater density but demands voltage translation and layout change, while AS6C1008-45ZIN provides more memory at same speed but forfeits 2V battery retention-making IDT6116LA45SOG8 uniquely suited for drop-in replacement in legacy 5V industrial systems requiring true nonvolatile SRAM behavior.
Availability
IDT6116LA45SOG8 is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, and medical diagnostic equipment requiring stable component supply, long-lifecycle support, and guaranteed industrial-temperature performance.
Supply support for IDT6116LA45SOG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory, and interface solutions for communications, computing, and industrial markets.
IDT6116LA45SOG8 belongs to IDT's legacy high-reliability static RAM product line, designed specifically for industrial and military applications demanding zero-refresh operation, battery backup, and extended temperature resilience.
FAQ
What is the guaranteed data retention voltage for IDT6116LA45SOG8?
IDT6116LA45SOG8 guarantees data retention down to 2.0 V (VDR = 2.0 V), enabling reliable operation from a single lithium or alkaline cell. This specification is validated across the full industrial temperature range (–45°C to +85°C) and is exclusive to the LA (low-power) variant-IDT6116LA45SOG8 does not require external voltage regulators or boost converters for backup functionality.
Does IDT6116LA45SOG8 require a clock or refresh signal?
No, IDT6116LA45SOG8 is a fully static RAM and requires no clock, timer, or periodic refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as VCC or backup voltage is applied and CS remains asserted appropriately. This eliminates timing controller overhead and simplifies integration into microcontroller-based systems where IDT6116LA45SOG8 serves as a plug-and-play memory extension.
What package type is used for IDT6116LA45SOG8?
IDT6116LA45SOG8 uses a 24-pin Small Outline IC (SOIC) package with gull-wing leads and a 300-mil body width (designated SO24-2 in IDT documentation). It is lead-free and RoHS-compliant, with standard JEDEC MO-012AC dimensions (7.5 mm × 10.3 mm), making it compatible with automated SMT assembly and legacy through-hole adapter boards.
How does the standby current of IDT6116LA45SOG8 compare between TTL and CMOS chip-select levels?
IDT6116LA45SOG8 offers two standby modes: TTL-level standby (ISB ≤ 20 mA when CS > VIH) and CMOS-level full standby (ISB1 ≤ 0.9 µA when CS > VHC and inputs held valid). The latter enables true battery-backed retention-IDT6116LA45SOG8 draws less than 1 µA in this mode, extending single-cell battery life to over five years in typical applications.
Is IDT6116LA45SOG8 pin-compatible with other IDT6116 variants?
Yes, IDT6116LA45SOG8 shares identical pinout and footprint with all IDT6116SA/LA family members in SOIC-24 packaging, including IDT6116LA25SOG8 and IDT6116SA45SOG8. Signal assignments (A0–A10, I/O0–I/O7, CS, WE, OE, VCC, GND) and electrical tolerances are consistent-enabling speed- or power-binning upgrades without PCB revision, provided timing margins accommodate the selected access time.
IDT6116LA45SOG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116LA45SOG8 FAQ
1.How can I place an order for IDT6116LA45SOG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116LA45SOG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116LA45SOG8 reliable?
The price and inventory of IDT6116LA45SOG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116LA45SOG8 is usually 5 days.
3.What payment methods are accepted for IDT6116LA45SOG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116LA45SOG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116LA45SOG8?
IDT6116LA45SOG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116LA45SOG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116LA45SOG8?
For technical support, including IDT6116LA45SOG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116LA45SOG8 requirements.
6.How does Aetrix verify that IDT6116LA45SOG8 is sourced from the original manufacturer or authorized distributors?
All IDT6116LA45SOG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116LA45SOG8 meets industry standards.
7.What is the process for return or replacement of IDT6116LA45SOG8?
All IDT6116LA45SOG8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116LA45SOG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116LA45SOG8 part is unused and in its original packaging.
Return procedure for IDT6116LA45SOG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116LA45SOG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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