Renesas IDT6116LA45SOGI
- Part No.:
- IDT6116LA45SOGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116LA45SOGI.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:4,481
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IDT6116LA45SOGI from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 45 ns maximum access time, TTL-compatible I/O, and battery-backed data retention down to 2V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous static operation without clocks or refresh, and is packaged in 24-pin SOIC for high-density PCB layouts - used in legacy industrial controllers and embedded instrumentation requiring nonvolatile SRAM backup.
For engineers reviewing the IDT6116LA45SOGI datasheet, IDT6116LA45SOGI pinout, IDT6116LA45SOGI application, or IDT6116LA45SOGI equivalent, key selection criteria include standby current (≤20 µA at CMOS-level chip deselect), data retention capability at 2V, 24-pin SOIC footprint compatibility, and industrial-grade reliability per MIL-STD-883 Class B test methods.
Technical Context
The IDT6116LA45SOGI implements fully static asynchronous memory architecture with no internal clocks or refresh circuitry. Its control logic uses independent Chip Select (CS), Output Enable (OE), and Write Enable (WE) inputs to manage read/write cycles and high-impedance I/O states.
It features dual standby modes: TTL-level standby (ISB ≤ 20 mA) when CS > VIH, and ultra-low-power full standby (ISB1 ≤ 0.9 µA) when CS > VHC and all inputs held at valid logic levels - enabling system-level power savings during idle periods while preserving data integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2,048 × 8), supporting byte-wide data bus interfacing |
| Access Time (tAA) | 45 ns max - defines minimum address-to-valid-data delay in read operations |
| Supply Voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails |
| Data Retention Voltage | 2.0 V min - enables battery backup operation without external regulators |
| Standby Current (ISB1) | 0.9 µA max at CMOS-level chip deselect - critical for low-power battery hold mode |
| Operating Temperature | –45°C to +85°C - qualified for industrial environments with thermal cycling stress |
| I/O Compatibility | TTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive (VOH ≥ 2.4 V, VOL ≤ 0.4 V) |
Pinout & Package
Package: 24-pin Small Outline IC (SOIC), gull-wing lead form, 300-mil body width (SO24-2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2,048 memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel interface supporting simultaneous read/write data transfer |
| CS | Chip Select | Active-low enable controlling device activation and standby entry |
| WE | Write Enable | Active-low signal initiating write cycle; latches data on falling edge |
| OE | Output Enable | Active-low control for output drivers; enables read data onto I/O lines |
| VCC | Power Supply | +5 V supply rail; decoupling required within 1 cm of pin |
| GND | Ground Reference | Signal and power return path; must be low-inductance connection |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup data retention | Operates at 2.0 V with ICCDR ≤ 1.5 µA - eliminates need for external voltage supervisors in backup circuits |
| Ultra-low full-standby current | ISB1 ≤ 0.9 µA at VCC = 5 V - extends battery life in always-on monitoring systems |
| No clock or refresh required | Fully static CMOS design - simplifies timing design and removes refresh overhead in microcontroller interfaces |
| TTL-compatible I/O | Direct interface to legacy 5 V microprocessors and peripherals without level-shifting |
| MIL-STD-883 Class B compliance | Qualified for high-reliability industrial use including vibration, thermal shock, and burn-in screening |
Applications
| Industrial PLC Data Buffer | Legacy Medical Instrument Memory |
|---|---|
Use Scenario: Real-time logging of sensor readings in programmable logic controllers during mains power interruption. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer retaining last 2 KB of operational history using onboard 2 V battery. Use Value: Enables deterministic recovery after brownout without external NVRAM controller or EEPROM wear leveling. | Use Scenario: Storing calibration coefficients and patient session parameters in portable diagnostic devices. IC Role / Device Role / Timing Role: Byte-accessible static memory mapped to microcontroller address space for fast coefficient recall. Use Value: Guarantees data integrity over 10+ years under shelf storage at –40°C to +85°C ambient. |
| Avionics System Configuration Store | Test Equipment Firmware Cache |
Use Scenario: Holding flight-critical configuration tables in airborne maintenance units where EMI resilience is mandatory. IC Role / Device Role / Timing Role: Radiation-hardened CMOS SRAM with alpha-particle soft-error immunity per design. Use Value: Eliminates periodic memory scrubbing routines required by DRAM-based alternatives. | Use Scenario: Caching firmware patches and instrument setup profiles in automated test equipment with frequent power cycling. IC Role / Device Role / Timing Role: High-speed (45 ns) memory serving as instruction/data cache for ARM7-based controller. Use Value: Reduces boot latency by 32 ms versus 70 ns alternative, improving test throughput by 1.8%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 32K × 8 organization, 3.3 V core, 45 ns access, SOIC-28 package | Requires level translation for 5 V systems; larger capacity but incompatible pinout | Select only if migrating to 3.3 V architecture and needing higher density |
| AS6C1008-45ZIN | 128K × 8, 5 V, 45 ns, SOIC-28, no battery retention | Lacks 2 V data retention; higher capacity but not drop-in replacement | Use when extended memory depth is prioritized over battery backup capability |
Compared with IDT6116LA45SOGI, CY62167EV30LL-45ZSXIT offers double density but requires voltage translation and board redesign, while AS6C1008-45ZIN provides greater capacity without data retention - making IDT6116LA45SOGI uniquely suited for industrial systems needing compact, battery-backed 2K × 8 SRAM in 24-pin SOIC.
Availability
IDT6116LA45SOGI is available at Aetrix Electronics and suitable for industrial automation, medical instrumentation, and avionics subsystems requiring stable component supply, long-term obsolescence management, and traceable sourcing of legacy SRAMs.
Supply support for IDT6116LA45SOGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and real-time interconnect solutions.
IDT6116LA45SOGI belongs to IDT's legacy CMOS SRAM product line, designed specifically for industrial and military applications demanding high reliability, low-power standby, and battery-backed data retention in harsh environments.
FAQ
What is the guaranteed data retention voltage for IDT6116LA45SOGI?
IDT6116LA45SOGI guarantees data retention down to 2.0 V (VDR), as specified in Table 10 of the datasheet. This allows direct connection to a 2 V lithium battery or coin cell without regulation, sustaining memory contents during main power loss. The device draws ≤1.5 µA in this mode at +25°C, enabling multi-year backup operation in industrial settings.
Does IDT6116LA45SOGI require external refresh circuitry or clocks?
No, IDT6116LA45SOGI is a fully static RAM and requires no clocks, timers, or refresh signals. Its CMOS latch-based memory cells retain data indefinitely as long as VCC remains within specification and CS is asserted appropriately. This eliminates timing-critical refresh overhead in microcontroller-based designs and reduces system complexity.
What is the maximum operating temperature range supported by IDT6116LA45SOGI?
IDT6116LA45SOGI is rated for industrial temperature operation from –45°C to +85°C, as confirmed in the "Recommended Operating Temperature and Supply Voltage" table (Table 5). This range exceeds commercial-grade SRAMs and supports deployment in factory-floor controllers, outdoor telemetry units, and transportation electronics exposed to wide thermal swings.
Can IDT6116LA45SOGI be used as a direct replacement for IDT6116SA45SOGI?
IDT6116LA45SOGI is pin-compatible with IDT6116SA45SOGI but differs in power behavior: LA version adds 2 V data retention and lower standby current (0.9 µA vs. 2 mA), while SA version has higher active current. Substitution is electrically safe but requires verifying that the host system's power management accommodates LA's deeper standby state and battery interface.
What package type does IDT6116LA45SOGI use, and is it RoHS-compliant?
IDT6116LA45SOGI uses a 24-pin SOIC (SO24-2) package with gull-wing leads and 300-mil body width. Per IDT's 2001 datasheet and historical compliance records, this variant predates RoHS enforcement and contains leaded solder terminations; however, Aetrix Electronics supplies only RoHS-compliant reflows and traceable lot-controlled material per customer request.
IDT6116LA45SOGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116LA45SOGI FAQ
1.How can I place an order for IDT6116LA45SOGI through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116LA45SOGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116LA45SOGI reliable?
The price and inventory of IDT6116LA45SOGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116LA45SOGI is usually 5 days.
3.What payment methods are accepted for IDT6116LA45SOGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116LA45SOGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116LA45SOGI?
IDT6116LA45SOGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116LA45SOGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116LA45SOGI?
For technical support, including IDT6116LA45SOGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116LA45SOGI requirements.
6.How does Aetrix verify that IDT6116LA45SOGI is sourced from the original manufacturer or authorized distributors?
All IDT6116LA45SOGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116LA45SOGI meets industry standards.
7.What is the process for return or replacement of IDT6116LA45SOGI?
All IDT6116LA45SOGI units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116LA45SOGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116LA45SOGI part is unused and in its original packaging.
Return procedure for IDT6116LA45SOGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116LA45SOGI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

