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Renesas IDT6116LA45SOGI8
- Part No.:
- IDT6116LA45SOGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116LA45SOGI8.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,678
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Product details
Overview
IDT6116LA45SOGI8 from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 45 ns maximum access time, TTL-compatible I/O, and battery-backed data retention at 2 V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous static operation without clocks or refresh, and is packaged in 24-pin SOIC (300 mil gull-wing). Used in legacy industrial controllers and embedded instrumentation requiring non-volatile SRAM holdover.
For engineers reviewing the IDT6116LA45SOGI8 datasheet, IDT6116LA45SOGI8 pinout, IDT6116LA45SOGI8 application, or IDT6116LA45SOGI8 equivalent, key selection criteria include its 45 ns read cycle time, 2V data retention capability, industrial-grade temperature rating, SOIC-24 package compatibility, and TTL-level interface compliance - all critical for maintaining legacy system reliability during power interruption or brownout conditions.
Technical Context
The IDT6116LA45SOGI8 implements fully static asynchronous memory architecture with independent chip select (CS), output enable (OE), and write enable (WE) controls. Its address decoder drives a 128 × 128 memory array, supporting random access with no internal timing constraints beyond tRC, tAA, and tACS.
It features dual standby modes: TTL-level standby (ISB = 20 mA max at VCC = 5.5 V) and full CMOS-level standby (ISB1 = 0.1 µA typical at VCC = 5.5 V), plus guaranteed 2 V data retention (ICCDR ≤ 30 µA) across –45°C to +85°C. Input/output capacitance is specified at 8 pF each.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2K × 8), enabling byte-wide data storage without external multiplexing |
| Access Time (tAA) | 45 ns max - defines minimum address-to-valid-data delay in read cycles |
| Data Retention Voltage | 2.0 V min - allows backup from coin-cell or low-voltage auxiliary supply during main power loss |
| Standby Current (ISB1) | 0.1 µA typical at CMOS-level CS deassertion - enables ultra-low-power hold mode in battery-critical systems |
| Operating Temperature | –45°C to +85°C - qualified for industrial environments including factory automation and telecom infrastructure |
| I/O Interface | TTL-compatible inputs/outputs - eliminates level-shifting requirements when interfacing with legacy 5 V microcontrollers |
| Package | 24-pin SOIC (SO24-2, 300 mil gull-wing) - surface-mount compatible with standard reflow profiles and PCB space constraints |
Pinout & Package
Package: 24-pin Small Outline Integrated Circuit (SOIC), 300 mil body width, gull-wing lead form (JEDEC MS-012AC), RoHS-compliant lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit binary address bus selecting one of 2,048 memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel interface supporting simultaneous read/write with high-impedance tri-state control |
| CS | Chip Select | Active-low enable controlling device activation and automatic entry into standby mode when HIGH |
| WE | Write Enable | Active-low signal qualifying write operations; must be LOW concurrent with CS LOW and stable address |
| OE | Output Enable | Active-low control for output drivers; allows read data to appear on I/O lines only when asserted |
| VCC | Power Supply | +5.0 V ±10% supply rail; powers core logic and I/O buffers |
| GND | Ground Reference | 0 V reference plane for all digital and analog functions; requires low-impedance PCB connection |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup data retention | Operates at 2 V with ICCDR ≤ 30 µA - sustains memory contents during extended main power outages |
| Two-tier standby power management | ISB = 20 mA (TTL-level CS) and ISB1 = 0.1 µA (CMOS-level CS) - enables hierarchical power gating in multi-rail systems |
| Fully static asynchronous operation | No clock, no refresh, no wait states - simplifies timing design and eliminates dynamic power overhead |
| TTL-compatible I/O levels | VIH = 2.2 V min, VOL = 0.4 V max at 8 mA - ensures direct interfacing with 5 V MCUs and FPGAs without translators |
| Military/industrial qualification | MIL-STD-883 Class B compliant (for military variants); industrial temp grade validated per IDT specification DSC-3089/03 |
Applications
| Industrial PLC Data Buffer | Legacy Telecom Line Card Cache |
|---|---|
|
Use Scenario: Storing real-time I/O state and configuration parameters in programmable logic controllers during AC mains interruption. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical process variables and firmware settings between power cycles. Use Value: 2 V data retention ensures >10-year backup with CR2032 cell; 45 ns access supports scan-cycle timing in sub-millisecond PLCs. |
Use Scenario: Caching protocol headers and call setup tables in TDM-based line cards where FPGA boot ROM is slow. IC Role / Device Role / Timing Role: High-speed local memory for fast lookup and modification of active channel metadata. Use Value: TTL compatibility eliminates level shifters; SOIC-24 footprint fits dense backplane card layouts with minimal routing overhead. |
| Avionics Sensor Calibration Storage | Medical Diagnostic Equipment Parameter Store |
|
Use Scenario: Holding calibrated sensor offsets and gain coefficients in flight control units exposed to thermal cycling. IC Role / Device Role / Timing Role: Radiation-tolerant (alpha-particle hardened) static RAM preserving calibration integrity over mission lifetime. Use Value: CMOS process eliminates soft errors; –45°C to +85°C rating covers avionics bay thermal extremes without derating. |
Use Scenario: Storing user-configurable acquisition parameters and safety thresholds in portable ultrasound and ECG devices. IC Role / Device Role / Timing Role: Low-power memory retaining setup data during battery-swapping or standby mode. Use Value: 0.1 µA full-standby current extends single-charge operation; SOIC package supports automated assembly in Class II medical PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 512K × 16-bit, 3.3 V core, 45 ns access, TSOP-44 package | Higher density and lower voltage, but incompatible pinout and wider package | Select only if redesigning PCB for higher capacity and modern 3.3 V systems; not drop-in |
| AS6C1008-45ZIN | 128K × 8-bit, 5 V, 45 ns, SOIC-28 package, no 2 V retention | Larger capacity and same speed, but lacks battery backup and uses 28-pin SOIC | Use when extended memory depth is required and 2 V retention is unnecessary; board layout change needed |
Compared with IDT6116LA45SOGI8, CY62167EV30LL-45ZSXIT offers greater density and lower voltage operation but requires full system voltage and layout revision, while AS6C1008-45ZIN provides more storage in a larger SOIC package but omits the critical 2 V data retention feature essential for legacy holdover designs.
Availability
IDT6116LA45SOGI8 is available at Aetrix Electronics and suitable for industrial PLCs, legacy telecom infrastructure, avionics subsystems, and medical diagnostic equipment requiring stable component supply across long product lifecycles.
Supply support for IDT6116LA45SOGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory, interface, and RF solutions for communications, computing, and industrial markets.
IDT6116LA45SOGI8 belongs to IDT's legacy CMOS SRAM product line, designed specifically for high-reliability, low-power, battery-backed memory applications in industrial and military systems where data persistence during power loss is mandatory.
FAQ
What is the guaranteed data retention voltage for IDT6116LA45SOGI8?
IDT6116LA45SOGI8 guarantees data retention down to 2.0 V across its rated industrial temperature range (–45°C to +85°C), with typical retention current of 0.5–30 µA depending on temperature and VCC. This enables reliable operation from lithium coin cells or low-voltage auxiliary supplies during main power failure.
Does IDT6116LA45SOGI8 require a clock or refresh signal?
No, IDT6116LA45SOGI8 is a fully static RAM and requires no clock, refresh cycles, or wait states. Its asynchronous design relies solely on address, CS, OE, and WE timing - simplifying integration with microcontrollers, FPGAs, and legacy bus architectures that lack dedicated memory controllers.
What package type is used for IDT6116LA45SOGI8?
IDT6116LA45SOGI8 is supplied in a 24-pin Small Outline Integrated Circuit (SOIC) package with 300 mil body width and gull-wing leads (JEDEC MO-012AC, IDT designation SO24-2). It is RoHS-compliant and compatible with standard surface-mount reflow processes.
How does the standby power consumption differ between TTL and CMOS-level chip select for IDT6116LA45SOGI8?
When CS is driven to TTL HIGH (>2.2 V), IDT6116LA45SOGI8 draws up to 20 mA (ISB). When CS is pulled to CMOS HIGH (>VCC – 0.2 V), it enters full standby mode drawing only 0.1 µA (ISB1). This two-tier behavior allows flexible power management based on system-level voltage rail capabilities.
Is IDT6116LA45SOGI8 pin-compatible with other IDT6116 variants?
Yes, IDT6116LA45SOGI8 shares identical pinout and function mapping with all IDT6116SA/LA family members in the same package (e.g., IDT6116LA25SOGI8, IDT6116SA45SOGI8), differing only in access speed, power profile, and temperature grade - enabling speed-bin upgrades without PCB changes.
IDT6116LA45SOGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116LA45SOGI8 FAQ
1.How can I place an order for IDT6116LA45SOGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116LA45SOGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116LA45SOGI8 reliable?
The price and inventory of IDT6116LA45SOGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116LA45SOGI8 is usually 5 days.
3.What payment methods are accepted for IDT6116LA45SOGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116LA45SOGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116LA45SOGI8?
IDT6116LA45SOGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116LA45SOGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116LA45SOGI8?
For technical support, including IDT6116LA45SOGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116LA45SOGI8 requirements.
6.How does Aetrix verify that IDT6116LA45SOGI8 is sourced from the original manufacturer or authorized distributors?
All IDT6116LA45SOGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116LA45SOGI8 meets industry standards.
7.What is the process for return or replacement of IDT6116LA45SOGI8?
All IDT6116LA45SOGI8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116LA45SOGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116LA45SOGI8 part is unused and in its original packaging.
Return procedure for IDT6116LA45SOGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116LA45SOGI8 Tags
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