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Renesas IDT6116LA45SOI
- Part No.:
- IDT6116LA45SOI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116LA45SOI.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,945
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Product details
Overview
IDT6116LA45SOI from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 45 ns access time, TTL-compatible I/O, and battery-backed data retention at 2V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous read/write cycles without clocks or refresh, and is packaged in 24-pin SOIC for high-density PCB layouts in embedded controllers and instrumentation.
For engineers reviewing the IDT6116LA45SOI datasheet, IDT6116LA45SOI pinout, IDT6116LA45SOI application, or IDT6116LA45SOI equivalent, key selection criteria include standby current (20 µA TTL-level, 0.1 µA CMOS-level), data retention capability (2V min.), industrial-grade reliability, and compatibility with legacy 5V bus systems requiring zero-refresh memory.
Technical Context
The IDT6116LA45SOI implements fully static asynchronous operation using advanced CMOS technology, eliminating clocking and refresh circuitry. Its control logic decodes CS, OE, and WE signals to manage three operational modes: read (CS=L, OE=L, WE=H), write (CS=L, WE=L), and standby (CS=H).
It features dual standby power states-TTL-level (ISB = 20 µA max) and CMOS-level (ISB1 = 0.1 µA max)-triggered by chip select voltage thresholds (VIH/VIL). Data retention is guaranteed down to VCC = 2.0 V with ICCDR ≤ 200 µA (military) or ≤ 30 µA (commercial/industrial), validated across full operating temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size & Organization | 16,384 bits (2K × 8); supports byte-wide data bus interfacing without external demultiplexing |
| Access Time (tAA) | 45 ns max; enables direct connection to 12–15 MHz microcontrollers without wait states |
| Supply Voltage | 5.0 V ±10%; compatible with standard 5V logic families and legacy system rails |
| Standby Current (ISB) | 20 µA max (TTL-level CS); reduces system power during idle periods in portable instruments |
| Data Retention Voltage | 2.0 V min; allows backup from coin-cell batteries or low-voltage hold-up circuits |
| Operating Temperature | –45°C to +85°C; qualified for industrial environments including factory automation and telecom infrastructure |
| I/O Compatibility | TTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V); ensures interoperability with 74LS/ALS and early microprocessor buses |
Pinout & Package
Package: 24-pin Small Outline Integrated Circuit (SOIC), 300 mil width, gull-wing lead form (SO24-2), RoHS-compliant lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus supporting 2K-word addressing; latched on CS transition for asynchronous access |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit TTL-compatible data path; high-impedance when CS=H or OE=H during read, driven during write |
| CS | Chip Select | Active-low enable; controls power state (standby when HIGH) and memory activation (active when LOW) |
| WE | Write Enable | Active-low write strobe; combined with CS determines write cycle timing per tWC and tWP specs |
| OE | Output Enable | Active-low output gate; isolates data bus during reads when deasserted, enabling bus sharing |
| VCC | Power Supply | +5V supply pin; requires local 0.1 µF ceramic decoupling per JEDEC guidelines |
| GND | Ground Reference | Signal and power ground return; must be low-inductance connection to minimize noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Zero-refresh static architecture | Eliminates DRAM-style refresh circuitry and timing constraints, simplifying FPGA/microcontroller interface design |
| Battery-backed data retention | Operates at 2V with ≤200 µA retention current, enabling >10-year backup from CR2032 cells in unpowered systems |
| Dual standby power modes | 0.1 µA CMOS-level standby (CS > VHC) and 20 µA TTL-level standby (CS > VIH) support flexible power management strategies |
| MIL-STD-883 Class B compliance | Validated for high-reliability industrial use with screening including burn-in, temperature cycling, and hermeticity tests |
| TTL-compatible I/O | Direct interface to 74LS, 8085, Z80, and 68000-family buses without level-shifting or buffering |
Applications
| Industrial PLC Memory Buffer | Legacy Microprocessor System Cache |
|---|---|
Use Scenario: Stores real-time I/O status and configuration parameters in programmable logic controllers during power interruption. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer retaining critical state data while main power is lost, enabled by 2V data retention capability. Use Value: Prevents machine re-homing or process restart after brownouts, reducing downtime in automated manufacturing lines. |
Use Scenario: Serves as fast scratchpad memory for Z80 or 8085-based test equipment where CPU lacks on-chip cache. IC Role / Device Role / Timing Role: Asynchronous 45 ns read/write interface directly mapped into CPU address space without wait-state generation. Use Value: Enables deterministic 12 MHz CPU operation with no external timing glue logic, lowering BOM cost and board area. |
| Telecom Line Card Configuration Store | Avionics Sensor Data Logger |
Use Scenario: Holds port mapping, gain settings, and calibration coefficients in T1/E1 line interface cards. IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing reliable parameter storage across –45°C to +85°C ambient with zero refresh overhead. Use Value: Ensures consistent signal conditioning performance despite thermal cycling in outdoor telecom cabinets. |
Use Scenario: Captures inertial measurement unit (IMU) outputs during flight for post-flight diagnostics in UAVs and light aircraft. IC Role / Device Role / Timing Role: Low-power LA-version SRAM powered from backup battery during main power loss, retaining last 2K samples. Use Value: Guarantees crash-data recovery even after total electrical failure, meeting DO-160E environmental compliance requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 3.3V core, 45 ns access, 2M × 8 organization; higher density but incompatible voltage domain | Requires level translation or separate 3.3V rail; unsuitable for pure 5V legacy systems | Select only if migrating to 3.3V architecture and needing >16K capacity |
| AS6C1008-45TIN | 5V, 45 ns, 128K × 8; larger capacity, same pinout but different address depth (A0–A16 vs A0–A10) | Not pin-compatible-requires PCB redesign due to extra address pins and different package footprint | Consider for new designs needing scalability beyond 2K words, not drop-in replacement |
Compared with IDT6116LA45SOI, CY62167EV30LL-45ZSXI offers higher density but mandates voltage translation, while AS6C1008-45TIN provides greater capacity at the cost of non-interchangeable pinout and layout changes-neither serves as a direct functional or physical substitute.
Availability
IDT6116LA45SOI is available at Aetrix Electronics and suitable for industrial automation, legacy microprocessor systems, and telecom infrastructure requiring stable component supply, long-lifecycle support, and guaranteed industrial-temperature qualification.
Supply support for IDT6116LA45SOI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in timing, memory, and interface solutions before its acquisition by Renesas Electronics in 2019. It pioneered high-reliability CMOS SRAMs for military and industrial markets.
IDT6116LA45SOI belongs to the IDT6116SA/LA family of low-power static RAMs designed specifically for zero-refresh, battery-backed, and harsh-environment applications where data integrity and long-term stability outweigh raw speed or density.
FAQ
What is the maximum operating temperature range for IDT6116LA45SOI?
IDT6116LA45SOI is rated for industrial temperature operation from –45°C to +85°C. This specification is confirmed in the Absolute Maximum Ratings table and Recommended Operating Conditions section of the official datasheet (DSC-3089/03, February 2001), and applies specifically to the LA version in SOIC packaging.
Does IDT6116LA45SOI require external refresh circuitry?
No, IDT6116LA45SOI is a fully static RAM and requires no clocks or refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied above the 2.0 V retention threshold, making it suitable for systems with minimal timing control overhead.
What is the minimum supply voltage for data retention in IDT6116LA45SOI?
IDT6116LA45SOI guarantees data retention down to VCC = 2.0 V, as specified in the Data Retention Characteristics table (Symbol VDR). At this voltage, typical retention current is ≤200 µA under military conditions and ≤30 µA for commercial/industrial grades.
Is IDT6116LA45SOI pin-compatible with the standard IDT6116SA45SOI?
IDT6116LA45SOI shares identical pinout, package, and logic interface with IDT6116SA45SOI, differing only in power consumption profiles and data retention capability. Both use the same 24-pin SOIC footprint and support identical address/data/control signal assignments per the Pin Description table.
What are the standby current specifications for IDT6116LA45SOI?
IDT6116LA45SOI specifies two standby current modes: ISB = 20 µA maximum (TTL-level chip select, CS > VIH) and ISB1 = 0.1 µA maximum (CMOS-level chip select, CS > VHC). These values are measured at VCC = 5.5 V and f = 0, per DC Electrical Characteristics Table 8.
IDT6116LA45SOI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116LA45SOI FAQ
1.How can I place an order for IDT6116LA45SOI through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116LA45SOI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116LA45SOI reliable?
The price and inventory of IDT6116LA45SOI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116LA45SOI is usually 5 days.
3.What payment methods are accepted for IDT6116LA45SOI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116LA45SOI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116LA45SOI?
IDT6116LA45SOI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116LA45SOI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116LA45SOI?
For technical support, including IDT6116LA45SOI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116LA45SOI requirements.
6.How does Aetrix verify that IDT6116LA45SOI is sourced from the original manufacturer or authorized distributors?
All IDT6116LA45SOI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116LA45SOI meets industry standards.
7.What is the process for return or replacement of IDT6116LA45SOI?
All IDT6116LA45SOI units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116LA45SOI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116LA45SOI part is unused and in its original packaging.
Return procedure for IDT6116LA45SOI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116LA45SOI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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