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Renesas IDT6116LA45SOI8
- Part No.:
- IDT6116LA45SOI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116LA45SOI8.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,691
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Product details
Overview
IDT6116LA45SOI8 from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 45 ns maximum access time, TTL-compatible I/O, and battery-backed data retention at 2 V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous read/write cycles without clocks or refresh, and is packaged in 24-pin SOIC (SOI8 = SOIC-24, 300-mil width). Used in embedded controllers and instrumentation requiring nonvolatile SRAM backup.
For engineers reviewing the IDT6116LA45SOI8 datasheet, IDT6116LA45SOI8 pinout, IDT6116LA45SOI8 application, or IDT6116LA45SOI8 equivalent, key selection criteria include standby current (≤20 µA at CMOS-level chip deselect), 2V data retention capability, industrial-grade reliability, and compatibility with legacy 5V TTL bus systems.
Technical Context
The IDT6116LA45SOI8 implements fully static asynchronous memory architecture with independent chip select (CS), output enable (OE), and write enable (WE) controls. Its internal 128 × 128 memory array uses advanced CMOS process to eliminate alpha-particle soft errors and support zero-refresh operation.
It features dual standby modes: TTL-level standby (ISB ≤ 20 mA) when CS > VIH, and ultra-low-power CMOS-level full standby (ISB1 ≤ 0.9 µA) when CS > VHC and inputs held valid. Data retention at 2 V is exclusive to the LA variant and verified over full industrial temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 45 ns max - defines minimum address-to-data-valid delay in read cycles |
| Supply Voltage | 5.0 V ±10% - compatible with standard 5V TTL logic rails |
| Data Retention Voltage | 2.0 V min - enables battery backup without external regulators |
| Full Standby Current (ISB1) | 0.9 µA max at VCC = 5.5 V - enables multi-year coin-cell operation |
| Operating Temperature | –45°C to +85°C - qualified for industrial environments including factory automation |
| Input/Output Compatibility | TTL-compatible - interfaces directly with 74LS/ALS logic without level shifters |
Pinout & Package
Package: 24-pin Small Outline Integrated Circuit (SOIC), 300-mil body width, gull-wing leads (JEDEC MS-013AC).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2,048 memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path for read and write operations |
| CS | Chip Select | Active-low enable; places device in standby when HIGH |
| WE | Write Enable | Active-low control for write cycles; must be LOW during data-in phase |
| OE | Output Enable | Active-low control for read output drivers; high-Z when HIGH |
| VCC | Power Supply | +5 V supply pin; decoupling required within 1 cm of pin |
| GND | Ground | Signal and power reference plane; requires low-inductance connection |
Key Features
| Feature | Design Value |
|---|---|
| Battery-backed data retention | Operates down to 2.0 V with ICCDR ≤ 1.5 µA - enables seamless backup using CR2032 cells |
| Ultra-low full-standby current | ISB1 ≤ 0.9 µA at VCC = 5.5 V - reduces system sleep-mode power by >99% vs. standard SRAM |
| No clock or refresh required | Fully static design - eliminates timing controller overhead and refresh interrupt latency |
| TTL-compatible I/O | VIH ≥ 2.2 V, VOL ≤ 0.4 V at 8 mA - interoperable with legacy 5V microcontrollers and FPGAs |
| MIL-STD-883 Class B compliance option | Available in military-grade variants - supports extended reliability screening for critical systems |
Applications
| Industrial PLC Data Buffer | Medical Instrumentation Memory |
|---|---|
Use Scenario: Real-time logging of sensor readings in programmable logic controllers during mains power loss. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer retaining last 2KB of operational history without external NV memory. Use Value: Enables deterministic recovery after brownout using on-board 2V coin cell, eliminating EEPROM wear-out and write-latency penalties. |
Use Scenario: Storing calibration coefficients and patient session data in portable ECG monitors between battery swaps. IC Role / Device Role / Timing Role: Low-leakage memory holding critical configuration during 10+ year device lifecycle. Use Value: 0.9 µA full-standby current extends single CR2032 life beyond 5 years while preserving data integrity at –40°C. |
| Avionics System Configuration Store | Test Equipment Firmware Cache |
Use Scenario: Holding flight-critical configuration parameters in airborne navigation units subject to thermal cycling and radiation. IC Role / Device Role / Timing Role: Radiation-hardened CMOS SRAM providing error-free storage without refresh-induced glitches. Use Value: Alpha-particle soft-error immunity and MIL-STD-883 Class B qualification ensure data integrity in high-altitude environments. |
Use Scenario: Caching FPGA configuration bitstreams in automated test equipment to reduce boot time between test sequences. IC Role / Device Role / Timing Role: High-speed 45 ns read-access memory enabling sub-millisecond reconfiguration. Use Value: 45 ns tAA allows direct CPU access without wait states, accelerating test throughput by >12% vs. slower SRAMs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 3V core, 45 ns access, 2M × 8 organization, 1.8–3.6 V supply | Requires level-shifting for 5V TTL buses; no 2V data retention | Preferred for new 3V designs with higher density needs; not drop-in for 5V TTL systems |
| AS6C1008-45ZIN | 5V supply, 45 ns access, 128K × 8, ISB1 = 1 µA, no 2V retention | Larger capacity but lacks battery backup; industrial temp only | Valid upgrade path where capacity >2K × 8 is needed and backup is handled externally |
Compared with IDT6116LA45SOI8, CY62167EV30LL-45ZSXIT offers higher density and lower voltage operation but requires board-level voltage translation, while AS6C1008-45ZIN provides greater memory depth without battery retention - making IDT6116LA45SOI8 uniquely suited for space-constrained, battery-backed 5V industrial systems.
Availability
IDT6116LA45SOI8 is available at Aetrix Electronics and suitable for industrial automation, medical instrumentation, avionics configuration storage, and test equipment firmware caching requiring stable component supply across long production lifecycles.
Supply support for IDT6116LA45SOI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory, and interface solutions for communications, computing, and industrial markets.
IDT6116LA45SOI8 belongs to IDT's legacy high-reliability CMOS SRAM product line, designed specifically for industrial and military applications demanding zero-refresh operation, battery backup, and robust 5V TTL interoperability.
FAQ
What is the guaranteed data retention voltage for IDT6116LA45SOI8?
IDT6116LA45SOI8 guarantees data retention down to 2.0 V across its full industrial temperature range (–45°C to +85°C). This specification is exclusive to the LA variant and enables reliable operation from standard 2V lithium coin cells. The retention current (ICCDR) remains ≤1.5 µA at 2.0 V, ensuring multi-year backup life without external regulation.
Does IDT6116LA45SOI8 require a clock or refresh signal?
No, IDT6116LA45SOI8 is a fully static RAM and requires no clock, refresh cycles, or periodic access to retain data. Its CMOS latch-based memory cells maintain state indefinitely as long as VCC and/or VDR (data retention voltage) is applied. This eliminates timing controller complexity and ensures deterministic behavior in safety-critical systems.
What is the meaning of "SOI8" in IDT6116LA45SOI8?
"SOI8" denotes the package variant: 24-pin Small Outline IC (SOIC) with 300-mil body width and gull-wing leads (JEDEC MS-013AC). It is distinct from SOJ (J-bend) and DIP packages. Pin pitch is 1.27 mm, and the package is RoHS-compliant per IDT's 2001 manufacturing standards.
Can IDT6116LA45SOI8 operate with 3.3V logic levels?
IDT6116LA45SOI8 is specified for 5.0 V ±10% operation only. Its input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive (VOL ≤ 0.4 V at 8 mA) meet TTL standards but are not optimized for 3.3V CMOS. Direct interfacing with 3.3V systems requires level translation to avoid marginal timing or excessive input leakage.
How does the standby current of IDT6116LA45SOI8 compare between TTL and CMOS chip-select modes?
IDT6116LA45SOI8 offers two standby modes: TTL-level standby (ISB ≤ 20 mA when CS > VIH) and CMOS-level full standby (ISB1 ≤ 0.9 µA when CS > VHC and inputs held valid). The latter reduces power by >99% and is essential for battery-backed applications - it requires clean, rail-to-rail CS signaling and stable address/data hold.
IDT6116LA45SOI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116LA45SOI8 FAQ
1.How can I place an order for IDT6116LA45SOI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116LA45SOI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116LA45SOI8 reliable?
The price and inventory of IDT6116LA45SOI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116LA45SOI8 is usually 5 days.
3.What payment methods are accepted for IDT6116LA45SOI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116LA45SOI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116LA45SOI8?
IDT6116LA45SOI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116LA45SOI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116LA45SOI8?
For technical support, including IDT6116LA45SOI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116LA45SOI8 requirements.
6.How does Aetrix verify that IDT6116LA45SOI8 is sourced from the original manufacturer or authorized distributors?
All IDT6116LA45SOI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116LA45SOI8 meets industry standards.
7.What is the process for return or replacement of IDT6116LA45SOI8?
All IDT6116LA45SOI8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116LA45SOI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116LA45SOI8 part is unused and in its original packaging.
Return procedure for IDT6116LA45SOI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116LA45SOI8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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