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Renesas IDT6116LA45TPGI

Part No.:
IDT6116LA45TPGI
Manufacturer:
Renesas
Category:
Memory
Package:
24-DIP (0.300", 7.62mm)
Datasheet:
AetrixIDT6116LA45TPGI.pdf
Description:
IC SRAM 16KBIT PARALLEL 24DIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,620

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Product details

Overview

IDT6116LA45TPGI from Integrated Device Technology is a 16K-bit (2K × 8) low-power CMOS static RAM with 45 ns maximum access time, TTL-compatible I/O, and battery-backed data retention at 2V. It operates across industrial temperature range (–45°C to +85°C), supports asynchronous read/write cycles without clocks or refresh, and is packaged in 24-pin plastic DIP (P24-1, 300 mil). It serves as main memory or buffer in legacy industrial controllers and embedded instrumentation.

For engineers reviewing the IDT6116LA45TPGI datasheet, IDT6116LA45TPGI pinout, IDT6116LA45TPGI application, or IDT6116LA45TPGI equivalent, key selection criteria include guaranteed 45 ns access under industrial conditions, 2V data retention capability, full TTL compatibility, and verified 24-pin DIP (300 mil) package mapping - all confirmed in IDT's February 2001 datasheet DSC-3089/03.

Technical Context

This device implements a fully static, asynchronous SRAM architecture with dual power modes: active operation (CS < VIL) and two standby states - TTL-level (CS > VIH) and CMOS-level (CS > VHC). Its address decoder drives a 128 × 128 memory array, and I/O control circuitry ensures high-impedance tri-state outputs during chip deselect or output disable.

It features TTL-compatible input thresholds (VIH = 2.2 V min, VIL = 0.8 V max), 5 V ±10% supply operation, and robust DC leakage specs: |ILI| ≤ 5 µA (commercial/industrial), ISB1 ≤ 0.1 mA (CMOS-level standby). Data retention is explicitly validated only for the LA version at VCC ≥ 2.0 V across full temperature range.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 2K × 8-bit (16,384 bits total); enables byte-wide data bus interfacing without external demultiplexing.
Access Time (tAA) 45 ns max (industrial temp); guarantees reliable read timing when interfacing with 22 MHz microcontrollers or bus controllers.
Data Retention Voltage 2.0 V minimum (LA version only); allows backup from coin-cell batteries or low-voltage hold-up circuits without regulator.
Standby Current (ISB1) 0.1 mA max (CMOS-level standby); reduces system power to ~0.5 mW at 5 V, critical for battery-operated instruments.
Operating Temperature –45°C to +85°C; qualified for industrial environments including factory automation and telecom line cards.
Supply Voltage 5.0 V ±10%; compatible with standard TTL/CMOS logic rails and eliminates need for dedicated voltage regulation.
I/O Compatibility TTL-input and TTL-output levels; interfaces directly with 74LS, 74F, and early microprocessor buses (e.g., Z80, 8085) without level shifters.

Pinout & Package

Package: 24-pin plastic DIP (P24-1, 300 mil body width), through-hole mount, RoHS-compliant per IDT documentation.

Pin/Terminal Circuit Role Design Meaning
A0–A10 Address Inputs 11-bit address bus accepting 0–2047; decoded internally to select one of 2K memory locations.
I/O0–I/O7 Bidirectional Data Bus 8-bit parallel interface; high-impedance when CS or OE inactive, enabling shared bus topology.
CS Chip Select Active-low enable; forces device into CMOS-level standby (ISB1 ≤ 0.1 mA) when high, reducing system power.
WE Write Enable Active-low control; initiates write cycle only when CS is also low; no write occurs if WE remains high during CS low.
OE Output Enable Active-low control; enables output drivers only during read cycles; prevents bus contention in multi-device systems.
VCC Power Supply +5 V ±10% supply; powers core logic and I/O buffers; decoupling required within 1 inch per datasheet layout guidelines.
GND Ground Reference Signal and power ground return; must be connected to system ground plane with low-inductance path.

Key Features

Feature Design Value
Low-power battery backup Retains data at 2.0 V with ICCDR ≤ 20 µA (typical), enabling >1-year coin-cell operation in metering applications.
Two-tier standby mode ISB = 20 mA (TTL-level) and ISB1 = 0.1 mA (CMOS-level); allows dynamic power scaling based on system wake latency requirements.
Fully static operation No clocks or refresh cycles required; simplifies timing design and eliminates hidden refresh overhead in real-time systems.
MIL-STD-883 Class B compliance Qualified for high-reliability industrial use; includes burn-in, temperature cycling, and hermeticity testing per military standards.
TTL-compatible I/O VIH ≥ 2.2 V, VOL ≤ 0.4 V, IOH = –4 mA, IOL = 8 mA; ensures direct connection to legacy 5 V logic families without interface components.

Applications

Industrial PLC Memory Buffer Legacy Microcontroller Data RAM

Use Scenario: Stores I/O status, timer values, and configuration parameters in programmable logic controllers operating in factory-floor environments (–45°C to +85°C).

IC Role / Device Role / Timing Role: Non-refreshing, byte-accessible data RAM interfaced directly to 80C31 or Z80 CPU buses via 8-bit data lines and 11-bit address lines.

Use Value: Eliminates DRAM refresh circuitry and supports battery-backed retention during mains failure, ensuring state persistence across power cycles.

Use Scenario: Serves as primary working RAM in vintage embedded systems such as test equipment firmware or protocol analyzers with fixed memory maps.

IC Role / Device Role / Timing Role: Asynchronous static RAM providing deterministic 45 ns read/write access aligned to CPU clock edges without wait-state insertion.

Use Value: Enables zero-wait-state operation with 22 MHz bus clocks, improving instruction throughput and deterministic interrupt response.

Telecom Line Card Buffer Avionics Maintenance Terminal Memory

Use Scenario: Buffers diagnostic logs and configuration snapshots in T1/E1 line interface cards exposed to wide ambient swings and EMI.

IC Role / Device Role / Timing Role: Isolated memory node on shared backplane bus; uses CS and OE to prevent contention during concurrent register reads.

Use Value: TTL compatibility ensures noise margin against induced transients; industrial temp rating avoids derating in uncooled chassis.

Use Scenario: Stores flight-critical calibration tables and fault history in portable maintenance terminals used on aircraft ramp environments (–40°C to +70°C).

IC Role / Device Role / Timing Role: Battery-backed SRAM retaining data during hot-swap battery replacement; accessed only during initialization or diagnostics.

Use Value: 2.0 V data retention allows use of CR2032 cells without boost converters, reducing BOM count and failure points.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-45ZSXI 512K × 16-bit, 3.3 V core, 45 ns access, SOIC-44; higher density but incompatible voltage and pinout. Requires level-shifting and PCB redesign; suited for modern 3.3 V systems needing larger memory footprint. Select only if upgrading system voltage and board layout; not drop-in compatible with IDT6116LA45TPGI.
AS6C1008-45TIN 128K × 8-bit, 5 V, 45 ns, 28-pin SOIC; same voltage and speed, but 8× capacity and different pin count. Needs socket adapter or layout change; appropriate for capacity upgrades where space permits extra pins. Use when memory expansion is prioritized over footprint continuity; verify address/data bus alignment matches.

Compared with IDT6116LA45TPGI, CY62167EV30LL-45ZSXI offers greater density but mandates 3.3 V infrastructure and new layout, while AS6C1008-45TIN retains 5 V operation and speed but requires 28-pin routing - neither provides pin-to-pin or functional drop-in replacement capability.

Availability

IDT6116LA45TPGI is available at Aetrix Electronics and suitable for industrial PLCs, legacy microcontroller systems, and telecom line card designs requiring stable component supply, long-lifecycle support, and verified 24-pin DIP packaging.

Supply support for IDT6116LA45TPGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in timing, memory, and interface solutions before its acquisition by Renesas in 2019. It pioneered high-reliability CMOS SRAMs for industrial and military applications.

IDT6116LA45TPGI belongs to the IDT6116SA/LA family of low-power, TTL-compatible static RAMs designed specifically for legacy embedded systems requiring battery-backed data retention and industrial-temperature operation without refresh overhead.

FAQ

What is the guaranteed maximum access time for IDT6116LA45TPGI under industrial temperature conditions?

IDT6116LA45TPGI has a guaranteed maximum address access time (tAA) of 45 ns across the full industrial temperature range (–45°C to +85°C), as specified in IDT datasheet DSC-3089/03, Table 13. This value applies to both read and write cycles and is tested under VCC = 5.0 V ±10% with standard AC load conditions.

Does IDT6116LA45TPGI support true battery backup, and what voltage is required?

Yes, IDT6116LA45TPGI supports true battery backup: it retains stored data at VCC as low as 2.0 V, a feature exclusive to the LA version. Per datasheet Table 10, typical data retention current (ICCDR) is 20 µA at 2.0 V and 25°C, enabling multi-year operation from standard coin cells without external regulators.

What package type and pin count does IDT6116LA45TPGI use?

IDT6116LA45TPGI uses a 24-pin plastic DIP package (P24-1, 300 mil body width), as confirmed in the Ordering Information section (Figure 3089 drw 12) and Pin Configuration diagram (Figure 3089 drw 02) of the official datasheet. It is not offered in SOIC, SOJ, or ceramic variants under this specific part number.

Is IDT6116LA45TPGI compatible with standard TTL logic families without level shifting?

Yes, IDT6116LA45TPGI features fully TTL-compatible inputs and outputs: VIH ≥ 2.2 V, VIL ≤ 0.8 V, VOH ≥ 2.4 V (at –4 mA), and VOL ≤ 0.4 V (at 8 mA). This allows direct interfacing with 74LS, 74F, and classic microprocessor buses (e.g., Z80, 8085) without external translators or pull-ups.

What are the two standby power modes supported by IDT6116LA45TPGI, and how do they differ?

IDT6116LA45TPGI supports TTL-level standby (ISB ≤ 20 mA) when CS > VIH, and CMOS-level standby (ISB1 ≤ 0.1 mA) when CS > VHC and all inputs held at valid logic levels. The latter reduces power by two orders of magnitude and is essential for ultra-low-power battery backup operation, as documented in Table 8 and Table 9 of the datasheet.

IDT6116LA45TPGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
24-DIP (0.300", 7.62mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Kbit
Memory Organization:
2K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
24-PDIP

IDT6116LA45TPGI FAQ

1.How can I place an order for IDT6116LA45TPGI through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT6116LA45TPGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT6116LA45TPGI reliable?

The price and inventory of IDT6116LA45TPGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116LA45TPGI is usually 5 days.

3.What payment methods are accepted for IDT6116LA45TPGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116LA45TPGI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT6116LA45TPGI?

IDT6116LA45TPGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT6116LA45TPGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT6116LA45TPGI?

For technical support, including IDT6116LA45TPGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116LA45TPGI requirements.

6.How does Aetrix verify that IDT6116LA45TPGI is sourced from the original manufacturer or authorized distributors?

All IDT6116LA45TPGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116LA45TPGI meets industry standards.

7.What is the process for return or replacement of IDT6116LA45TPGI?

All IDT6116LA45TPGI units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116LA45TPGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT6116LA45TPGI part is unused and in its original packaging.

Return procedure for IDT6116LA45TPGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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