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Renesas IDT6116SA20SO8
- Part No.:
- IDT6116SA20SO8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116SA20SO8.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,676
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Product details
Overview
IDT6116SA20SO8 from Integrated Device Technology is a 16K-bit (2K × 8) high-speed CMOS static RAM with 20 ns maximum access time, TTL-compatible I/O, and full static operation requiring no clocks or refresh. It operates at 5.0 V ±10%, supports industrial temperature range (–45°C to +85°C), and features dual standby modes-TTL-level (40 mA) and CMOS-level (2 mA)-for system power optimization in embedded controllers and data acquisition systems.
For engineers reviewing the IDT6116SA20SO8 datasheet, IDT6116SA20SO8 pinout, IDT6116SA20SO8 application, or IDT6116SA20SO8 equivalent, key selection criteria include guaranteed 20 ns read cycle time (tRC), chip-select–controlled low-power standby, 24-pin SOIC package compatibility, and verified operation across industrial temperature extremes without refresh circuitry.
Technical Context
The IDT6116SA20SO8 implements a fully static asynchronous architecture with address decoding, I/O control, and input data circuitry integrated into a 128 × 128 memory array. Its control logic responds to independent CS, OE, and WE signals to enable read, write, and high-impedance tri-state output modes without clocking.
It supports two distinct standby states: TTL-level standby (ISB = 40 mA max) activated when CS > VIH, and deep CMOS-level standby (ISB1 = 2 mA max) triggered by CMOS-compatible CS deassertion (CS > VHC) with inputs held valid-enabling scalable power management in battery-backed or thermally constrained systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 20 ns max - guarantees data valid within 20 ns of stable address and CS assertion |
| Read Cycle Time (tRC) | 20 ns max - defines minimum interval between successive read operations |
| Supply Voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails; no regulation required |
| Operating Temperature | –45°C to +85°C - qualified for industrial environments including factory automation and motor drives |
| Standby Current (ISB1) | 2 mA max at CMOS-level CS deassertion - enables ultra-low-power retention during idle periods |
| I/O Compatibility | TTL-input and TTL-output - interoperable with legacy 74LS, 74F, and microcontroller GPIO without level shifters |
Pinout & Package
Package: 24-pin Small Outline Integrated Circuit (SOIC), 300 mil body width, gull-wing lead form (SO24-2), RoHS-compliant plastic encapsulation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit binary address bus selecting one of 2,048 memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path supporting simultaneous read/write with automatic direction control |
| CS | Chip Select | Active-low enable controlling device activation and entry into TTL/CMOS standby modes |
| WE | Write Enable | Active-low signal qualifying write cycles; high during reads to maintain output drive |
| OE | Output Enable | Active-low control for output buffer; allows shared bus operation with other devices |
| VCC | Power Supply | +5 V supply pin; decoupling required within 1 cm for stable 20 ns timing |
| GND | Ground Reference | Signal and power return; must be low-inductance connection to minimize noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Fully static CMOS design eliminates external refresh circuitry and associated timing overhead |
| Dual standby modes | Supports both TTL-level (40 mA) and CMOS-level (2 mA) standby, enabling adaptive power scaling |
| TTL-compatible I/O | Direct interface with 5 V microcontrollers, FPGAs, and legacy logic without level translation |
| Industrial temperature rating | Validated operation from –45°C to +85°C ensures reliability in uncontrolled industrial enclosures |
| Low alpha-particle sensitivity | Advanced CMOS process minimizes soft-error rate-critical for long-term data integrity in fielded systems |
Applications
| Industrial PLC Data Buffers | Legacy Microcontroller Memory Expansion |
|---|---|
Use Scenario: Real-time I/O scanning in programmable logic controllers where deterministic memory access latency is required between scan cycles. IC Role / Device Role / Timing Role: Byte-wide static RAM providing zero-wait-state scratchpad memory for temporary register storage and intermediate calculation results. Use Value: 20 ns tRC enables sub-microsecond memory access, supporting 500 kHz+ scan rates without CPU wait states. |
Use Scenario: Adding external RAM to 8-bit microcontrollers (e.g., Intel 8051, Zilog Z8) with limited on-chip memory for firmware overlays and stack extension. IC Role / Device Role / Timing Role: Asynchronous parallel memory mapped at fixed address space, interfaced via dedicated address/data bus and discrete CS/OE/WE controls. Use Value: TTL compatibility and 20 ns access eliminate glue logic, reducing BOM count and PCB area in cost-sensitive designs. |
| Motor Drive Control Registers | Test Equipment Data Capture Buffers |
Use Scenario: Storing real-time PWM duty cycle values, fault logs, and calibration coefficients in servo amplifier modules operating in harsh thermal environments. IC Role / Device Role / Timing Role: Non-refreshing SRAM holding configuration and status registers accessible by both DSP and safety monitor circuits. Use Value: Industrial temperature rating (–45°C to +85°C) and low standby current ensure uninterrupted operation inside sealed motor drive cabinets. |
Use Scenario: Capturing high-speed analog-to-digital conversion streams in benchtop oscilloscopes and logic analyzers where burst-mode acquisition requires local buffering. IC Role / Device Role / Timing Role: High-speed parallel memory acting as first-stage FIFO, accepting data at up to 50 MHz (20 ns cycle) before DMA transfer to host processor. Use Value: Guaranteed 20 ns tRC and tAA support sustained 50 Mwords/s read/write throughput without cycle stretching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 32K × 8-bit, 45 ns access, 3.3 V only, SOIC-28 package | Higher density but slower speed and incompatible voltage; requires level-shifting for 5 V systems | Select only if migrating to 3.3 V architecture and needing >16K capacity; not drop-in for IDT6116SA20SO8 |
| AS6C1008-20TIN | 128K × 8-bit, 20 ns access, 5 V, SOIC-28, higher ICC1 (55 mA vs. 80 mA) | Larger memory footprint and different pinout; not pin-compatible due to extra address lines (A11–A16) | Use when expanding memory beyond 16K is required; board redesign needed for A11–A16 routing and SOIC-28 footprint |
Compared with CY62167EV30LL-45ZSXI and AS6C1008-20TIN, the IDT6116SA20SO8 delivers verified 20 ns performance at 5 V in a compact 24-pin SOIC, making it uniquely suitable for legacy industrial designs where voltage, timing, and footprint constraints prohibit migration.
Availability
IDT6116SA20SO8 is available at Aetrix Electronics and suitable for industrial automation, test equipment, and legacy microcontroller-based systems requiring stable component supply, long-lifecycle support, and guaranteed 20 ns timing performance across –45°C to +85°C.
Supply support for IDT6116SA20SO8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.
The IDT6116SA/LA product line was designed for high-reliability, low-power, and refresh-free memory expansion in military, industrial, and commercial embedded systems-emphasizing timing precision, radiation tolerance, and wide-temperature operability.
FAQ
What is the maximum guaranteed read cycle time for IDT6116SA20SO8?
The IDT6116SA20SO8 has a maximum guaranteed read cycle time (tRC) of 20 ns across its specified industrial temperature range (–45°C to +85°C) and supply voltage (5.0 V ±10%). This value is production-tested and documented in the AC Electrical Characteristics table under "6116SA20" speed grade. The IDT6116SA20SO8 achieves this timing without requiring external clocks or refresh cycles, supporting deterministic memory access in real-time control applications.
Does IDT6116SA20SO8 support battery backup operation?
No, the IDT6116SA20SO8 does not support battery backup operation. Battery retention capability is exclusive to the LA variant (e.g., IDT6116LA20SO8), which specifies 2 V data retention voltage and microamp-level ISB1 current. The "SA" suffix denotes the standard-power version; the IDT6116SA20SO8 requires continuous 5 V supply for data retention and exhibits 2 mA CMOS-level standby current-not µA-level retention current.
Is IDT6116SA20SO8 pin-compatible with other 24-pin SOIC SRAMs like the HM6116LP-2?
IDT6116SA20SO8 shares the industry-standard 24-pin SOIC pinout for 2K × 8 SRAMs-including identical A0–A10, I/O0–I/O7, CS, WE, OE, VCC, and GND assignments-but differs electrically in timing and drive strength. While pinout matches HM6116LP-2, the IDT6116SA20SO8 offers faster 20 ns access versus HM6116LP-2's 200 ns, and lower standby current. System validation is required for timing-critical replacements.
What is the operating supply current of IDT6116SA20SO8 during active read cycles?
The IDT6116SA20SO8 draws a maximum operating supply current (ICC1) of 80 mA when CS < VIL, outputs open, VCC at maximum (5.5 V), and address inputs static (f = 0). Under dynamic conditions at maximum frequency (f = fMAX), ICC2 reaches 100 mA. These values are specified for the industrial temperature grade and reflect worst-case power consumption during sustained memory access in systems such as data loggers and motion controllers.
Can IDT6116SA20SO8 be used in military-temperature applications?
No, the IDT6116SA20SO8 is rated for industrial temperature range only (–45°C to +85°C). Military-grade operation (–55°C to +125°C) requires the "Y" or "TP" suffix variants (e.g., IDT6116SA20Y or IDT6116SA20TP) packaged in CERDIP and compliant with MIL-STD-883 Class B. Using IDT6116SA20SO8 outside its rated range risks timing violation, increased leakage, or functional failure.
IDT6116SA20SO8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116SA20SO8 FAQ
1.How can I place an order for IDT6116SA20SO8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116SA20SO8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116SA20SO8 reliable?
The price and inventory of IDT6116SA20SO8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116SA20SO8 is usually 5 days.
3.What payment methods are accepted for IDT6116SA20SO8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116SA20SO8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116SA20SO8?
IDT6116SA20SO8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116SA20SO8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116SA20SO8?
For technical support, including IDT6116SA20SO8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116SA20SO8 requirements.
6.How does Aetrix verify that IDT6116SA20SO8 is sourced from the original manufacturer or authorized distributors?
All IDT6116SA20SO8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116SA20SO8 meets industry standards.
7.What is the process for return or replacement of IDT6116SA20SO8?
All IDT6116SA20SO8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116SA20SO8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116SA20SO8 part is unused and in its original packaging.
Return procedure for IDT6116SA20SO8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116SA20SO8 Tags
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