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Renesas IDT6116SA20SOI

Part No.:
IDT6116SA20SOI
Manufacturer:
Renesas
Category:
Memory
Package:
24-SOIC (0.295", 7.50mm Width)
Datasheet:
AetrixIDT6116SA20SOI.pdf
Description:
IC SRAM 16KBIT PARALLEL 24SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,940

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Product details

Overview

IDT6116SA20SOI from Integrated Device Technology is a 16K-bit (2K × 8) high-speed CMOS static RAM with 20 ns maximum access time, TTL-compatible I/O, and industrial temperature range (–45°C to +85°C). It operates at 5.0 V ±10%, supports full static asynchronous operation with no refresh required, and features dual standby modes - TTL-level (40 mA) and CMOS-level (2 mA) - for power-sensitive embedded control and data buffering applications.

For engineers reviewing the IDT6116SA20SOI datasheet, IDT6116SA20SOI pinout, IDT6116SA20SOI application, or IDT6116SA20SOI equivalent, key selection considerations include its 24-pin SOIC package, 2K × 8 organization, guaranteed 20 ns read cycle time across industrial temperatures, and compatibility with legacy 5 V TTL bus systems in avionics, test equipment, and industrial PLCs.

Technical Context

The IDT6116SA20SOI implements a fully static asynchronous memory architecture with independent chip select (CS), output enable (OE), and write enable (WE) controls, enabling flexible read/write timing without clocks or refresh cycles. Its address decoder drives a 128 × 128 memory array, and all inputs/outputs meet TTL voltage thresholds (VIH = 2.2 V min, VIL = 0.8 V max) for direct interfacing with 5 V logic families.

Two distinct standby modes are supported: TTL-level standby (ISB = 40 mA max) activates when CS > VIH, while CMOS-level standby (ISB1 = 2 mA max) engages when CS > VHC and input pins are held at valid logic levels. This dual-mode design enables system-level power optimization in battery-backed or thermally constrained environments.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 2K × 8-bit (16,384 bits), single-port SRAM with byte-wide data interface
Access Time (tAA) 20 ns max at VCC = 4.5–5.5 V, TA = –45°C to +85°C - guarantees deterministic read latency in real-time control loops
Supply Voltage 5.0 V ±10% - compatible with standard 5 V logic rails and legacy industrial power supplies
Standby Current (ISB1) 2 mA max (CMOS-level) - enables ultra-low-power retention during system sleep without external power gating
I/O Compatibility TTL-input and TTL-output - eliminates level-shifter requirements when interfacing with 74LS/ALS or microcontroller GPIO
Operating Temperature –45°C to +85°C - qualified for industrial automation, motor drives, and outdoor instrumentation
Package 24-pin SOIC (SO24-2), 300-mil width - surface-mount compatible with standard reflow profiles and IPC-7351 footprints

Pinout & Package

24-pin Small Outline Integrated Circuit (SOIC), 300-mil body width, gull-wing lead form (JEDEC MS-012AC), RoHS-compliant matte tin lead finish.

Pin/Terminal Circuit Role Design Meaning
A0–A10 Address Inputs 11-bit binary address bus selecting one of 2,048 memory locations
I/O0–I/O7 Bi-directional Data Bus 8-bit parallel interface supporting simultaneous read or write of one byte
CS Chip Select Active-low enable controlling device activation and standby entry/exit
WE Write Enable Active-low signal qualifying write operations; high = read or high-Z state
OE Output Enable Active-low control for output drivers; decouples data bus during writes or idle periods
VCC Power Supply +5 V supply pin; requires local 0.1 µF ceramic bypass capacitor per datasheet layout guidelines
GND Ground Reference Signal and power return path; must be low-impedance connection to minimize noise coupling

Key Features

Feature Design Value
No refresh required Fully static CMOS core eliminates DRAM-style refresh circuitry, simplifying controller firmware and reducing system jitter
Dual standby modes TTL-level (40 mA) and CMOS-level (2 mA) standby currents allow dynamic power scaling based on wake-up latency requirements
Battery backup support Not applicable to SA version - only LA variant supports 2 V data retention; SA prioritizes speed over ultra-low-power retention
Military-grade reliability Manufactured using alpha-particle-hardened CMOS process, reducing soft-error rate in radiation-prone environments
Direct TTL interface Input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive (IOH = –4 mA, IOL = 8 mA) match 74LS family specs without pull-ups or buffers

Applications

Industrial PLC Data Buffering Avionics Display Memory

Use Scenario: Storing real-time sensor fusion outputs and command history in programmable logic controllers operating in factory-floor environments with wide thermal swings.

IC Role / Device Role / Timing Role: Byte-accessible scratchpad memory providing deterministic 20 ns read access for cyclic executive tasks and interrupt service routines.

Use Value: Eliminates wait states in 5 V microcontroller buses, enabling sub-10 µs response to fieldbus events without DMA overhead.

Use Scenario: Holding frame-buffer data for monochrome cockpit displays in certified airborne systems requiring extended operational life and EMI resilience.

IC Role / Device Role / Timing Role: Non-refreshing static RAM serving as display memory mapped into CPU address space with guaranteed timing across –45°C to +85°C.

Use Value: Supports flicker-free rendering at 60 Hz refresh via burst reads, leveraging TTL-compatible drive strength to directly drive display controller inputs.

Test Equipment Pattern Storage Legacy Industrial Controller Upgrade

Use Scenario: Storing digital stimulus patterns and expected response vectors in automated test equipment where pattern repeatability and timing fidelity are critical.

IC Role / Device Role / Timing Role: High-speed memory accessed by FPGA-based sequencers generating precise edge-aligned waveforms with <20 ns setup/hold margins.

Use Value: Enables 50 MHz pattern clocking (tRC = 20 ns) without pipeline stalls, maintaining deterministic vector delivery across temperature extremes.

Use Scenario: Replacing obsolete 27C64 EPROMs in aging CNC machine controllers where firmware patching requires writable non-volatile storage with fast random access.

IC Role / Device Role / Timing Role: Drop-in SRAM replacement for boot ROM shadowing and runtime variable storage, retaining existing 5 V bus and 24-pin footprint.

Use Value: Provides zero-latency read/write capability for real-time axis interpolation variables, improving motion control jitter by >3× versus EPROM+RAM hybrid designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-45ZSXI 32K × 8, 45 ns access, 3.3 V core (with 5 V tolerant I/O), SOIC-28 package Higher density and lower voltage, but requires level translation or redesign for pure 5 V systems Select when upgrading capacity or migrating to 3.3 V infrastructure; not pin-compatible with IDT6116SA20SOI
AS6C1008-20TIN 128K × 8, 20 ns access, 5 V operation, SOIC-28 package, higher ICC1 (120 mA vs. 80 mA) Same speed grade and voltage, but larger memory map and incompatible pinout (28-pin vs. 24-pin) Choose for increased buffer depth in new designs; requires PCB layout change and address decoding update

Compared with CY62167EV30LL-45ZSXI and AS6C1008-20TIN, the IDT6116SA20SOI offers the only 24-pin SOIC 2K × 8 solution with guaranteed 20 ns industrial-temperature performance and native 5 V TTL compatibility - making it uniquely suitable for footprint-constrained legacy 5 V upgrades where density and voltage migration are secondary to timing predictability and drop-in replaceability.

Availability

IDT6116SA20SOI is available at Aetrix Electronics and suitable for industrial automation, avionics subsystems, and test equipment requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature qualification.

Supply support for IDT6116SA20SOI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

IDT6116SA20SOI belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for 5 V TTL-system designers needing reliable, no-refresh memory with military- and industrial-grade reliability and timing guarantees.

FAQ

What is the maximum guaranteed access time for IDT6116SA20SOI across its rated temperature range?

IDT6116SA20SOI has a maximum guaranteed address access time (tAA) of 20 ns over its full industrial temperature range of –45°C to +85°C, measured at VCC = 4.5 V to 5.5 V. This specification is production-tested and applies to all units shipped under this part number, ensuring deterministic timing for real-time embedded applications without derating.

Does IDT6116SA20SOI support battery backup data retention like the LA variant?

No, IDT6116SA20SOI does not support battery backup data retention. That feature is exclusive to the LA suffix variants (e.g., IDT6116LA20SOI), which specify 2 V minimum retention voltage and sub-1 µA retention current. The SA version prioritizes speed and TTL drive strength over ultra-low-power retention capability.

Is IDT6116SA20SOI pin-compatible with other 24-pin 2K × 8 SRAMs such as the HM6116 or IS61C256?

IDT6116SA20SOI shares the industry-standard 24-pin SOIC pinout for 2K × 8 SRAMs (A0–A10, I/O0–I/O7, CS, WE, OE, VCC, GND), matching HM6116 and compatible with IS61C256's 28-pin variant only in functional signal mapping - not physical pinout. No PCB changes are needed when replacing HM6116LP-20 or equivalent 24-pin 2K × 8 SRAMs.

What are the two standby current specifications for IDT6116SA20SOI and how are they triggered?

IDT6116SA20SOI specifies two standby currents: ISB = 40 mA max (TTL-level standby) when CS > VIH, and ISB1 = 2 mA max (CMOS-level standby) when CS > VHC and all inputs are held at valid logic levels (VIL or VIH). The latter requires stricter input biasing but delivers 20× lower quiescent power for deep-sleep system states.

Can IDT6116SA20SOI operate reliably with a 5.5 V supply voltage?

Yes, IDT6116SA20SOI is fully specified for VCC = 5.0 V ±10%, meaning it operates reliably from 4.5 V to 5.5 V. All AC and DC parameters - including 20 ns access time, TTL compatibility, and standby currents - are guaranteed across this full voltage range at industrial temperatures, supporting designs with unregulated 5 V rails.

IDT6116SA20SOI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
24-SOIC (0.295", 7.50mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Kbit
Memory Organization:
2K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
20ns
Access Time:
20 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-SOIC

IDT6116SA20SOI FAQ

1.How can I place an order for IDT6116SA20SOI through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT6116SA20SOI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT6116SA20SOI reliable?

The price and inventory of IDT6116SA20SOI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116SA20SOI is usually 5 days.

3.What payment methods are accepted for IDT6116SA20SOI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116SA20SOI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT6116SA20SOI?

IDT6116SA20SOI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT6116SA20SOI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT6116SA20SOI?

For technical support, including IDT6116SA20SOI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116SA20SOI requirements.

6.How does Aetrix verify that IDT6116SA20SOI is sourced from the original manufacturer or authorized distributors?

All IDT6116SA20SOI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116SA20SOI meets industry standards.

7.What is the process for return or replacement of IDT6116SA20SOI?

All IDT6116SA20SOI units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116SA20SOI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT6116SA20SOI part is unused and in its original packaging.

Return procedure for IDT6116SA20SOI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT6116SA20SOI Tags

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