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Renesas IDT6116SA20TP
- Part No.:
- IDT6116SA20TP
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-DIP (0.300", 7.62mm)
- Datasheet:
-
IDT6116SA20TP.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24DIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,534
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Product details
Overview
IDT6116SA20TP from Integrated Device Technology is a 16K-bit (2K × 8) high-speed CMOS static RAM with 20 ns maximum access time, TTL-compatible I/O, and industrial temperature range (–45°C to +85°C). It operates at 5.0 V ±10%, supports asynchronous read/write cycles without clocks or refresh, and features dual standby modes - TTL-level (40 mA) and CMOS-level (2 mA) - for system power optimization in embedded controllers and data acquisition systems.
For engineers reviewing the IDT6116SA20TP datasheet, IDT6116SA20TP pinout, IDT6116SA20TP application, or IDT6116SA20TP equivalent, key selection criteria include guaranteed 20 ns tAA/tACS timing, 24-pin SOIC package compatibility, industrial-grade reliability per MIL-STD-883 Class B, and low-power standby operation suitable for battery-backed memory subsystems.
Technical Context
The IDT6116SA20TP implements fully static asynchronous architecture with no clock or refresh circuitry required. Its address decoder drives a 128 × 128 memory array, and control logic supports three distinct operational modes: active read (CS=L, OE=L, WE=H), active write (CS=L, WE=L), and two-tier standby (CS=H with TTL- or CMOS-level input thresholds).
It uses advanced CMOS process technology to eliminate alpha-particle soft errors and ensures TTL-level compatibility on all inputs/outputs. The device guarantees 20 ns access time across the full industrial temperature range (–45°C to +85°C) and supports both CS-controlled and WE-controlled write timing waveforms per AC Electrical Characteristics Table 12.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA / tACS) | 20 ns max - defines minimum address or chip select assertion-to-valid-data delay in read cycles |
| Supply Voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails; no regulation margin required |
| Operating Temperature | –45°C to +85°C - qualified for industrial environments without derating |
| Standby Current (ISB1) | 2 mA max at CMOS-level CS disable - enables ultra-low-power retention when VCC remains active |
| I/O Compatibility | TTL-input and TTL-output - direct interfacing with 74LS/74HC families without level-shifting |
| Package | 24-pin SOIC (SO24-2) - surface-mount footprint supporting high-density PCB layouts |
Pinout & Package
Package: 24-pin Small Outline Integrated Circuit (SOIC), gull-wing lead form, 300 mil body width (SO24-2), RoHS-compliant plastic encapsulation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit binary address bus selecting one of 2K memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path for read output or write input; high-impedance when disabled |
| CS | Chip Select | Active-low enable controlling device activation and standby entry (TTL- or CMOS-level sensitive) |
| WE | Write Enable | Active-low signal enabling write cycle; combined with CS to define write window timing |
| OE | Output Enable | Active-low control for output drivers; allows read data to appear on I/O pins only when asserted |
| VCC | Power Supply | +5 V supply pin; decoupling required within 1 cm for stable 20 ns operation |
| GND | Ground Reference | Signal and power return; must be low-inductance connection to minimize noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| 20 ns Guaranteed Access Time | Enables real-time data buffering in 50 MHz-equivalent bus systems without wait states |
| Dual Standby Power Modes | Reduces system power by >95% vs active mode: ISB = 40 mA (TTL), ISB1 = 2 mA (CMOS) |
| Fully Static Operation | Eliminates external refresh circuitry and clock distribution, simplifying controller design |
| TTL-Compatible I/O | Direct interface with legacy microcontrollers and FPGAs; no level translators needed |
| MIL-STD-883 Class B Qualified | Validated for industrial reliability including temperature cycling, mechanical shock, and burn-in |
Applications
| Industrial PLC Data Buffering | Legacy Microcontroller Memory Expansion |
|---|---|
|
Use Scenario: Real-time I/O scanning in programmable logic controllers requiring deterministic 20 ns memory access for scan-cycle timing compliance. IC Role / Device Role / Timing Role: Byte-wide static RAM providing non-refreshed scratchpad storage for process variables and register mapping. Use Value: Guarantees sub-25 ns read latency under –45°C to +85°C conditions, eliminating bus wait-state insertion in ladder-logic execution engines. |
Use Scenario: Adding external RAM to 8-bit microcontrollers (e.g., Intel 8051, Zilog Z8) with limited on-chip memory for firmware stack and data buffers. IC Role / Device Role / Timing Role: Asynchronous parallel memory mapped at fixed address space; controlled via dedicated CS, OE, and WE lines. Use Value: Enables direct TTL-level bus interfacing without glue logic; 20 ns tAA satisfies 12 MHz CPU bus timing with zero wait states. |
| Medical Instrument Data Logging | Avionics Sensor Interface Module |
|
Use Scenario: Storing calibrated sensor readings in portable diagnostic devices where battery life and thermal stability are critical. IC Role / Device Role / Timing Role: Low-power standby memory retaining data during sleep mode using ISB1 = 2 mA at 5 V. Use Value: Supports >10-year data retention in powered-down state while maintaining full 2K × 8 capacity - no volatile backup capacitor required. |
Use Scenario: Interfacing analog-to-digital converters in flight control computers requiring radiation-tolerant, high-reliability memory. IC Role / Device Role / Timing Role: Industrial-grade SRAM deployed in conduction-cooled modules operating across extended temperature excursions. Use Value: MIL-STD-883 Class B qualification ensures immunity to single-event upsets and long-term parameter stability in avionics EMI environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 512K × 16-bit, 45 ns access, 3.3 V core, SOIC-44 package | Higher density and lower voltage but incompatible pinout and bus width; requires PCB redesign | Select only if migrating to 3.3 V systems and needing >16K capacity; not drop-in compatible |
| AS6C1008-20TIN | 128K × 8-bit, 20 ns access, 5 V, SOIC-28 package | Larger capacity and same speed, but 28-pin SOIC requires layout change and different address decoding | Use when 128K capacity is needed and board revision allows 28-pin footprint; identical timing behavior |
Compared with IDT6116SA20TP, CY62167EV30LL-45ZSXI offers higher density but mandates voltage and interface redesign, while AS6C1008-20TIN matches speed and voltage but demands physical layout adaptation - neither provides pin-for-pin replacement capability.
Availability
IDT6116SA20TP is available at Aetrix Electronics and suitable for industrial automation, legacy microcontroller expansion, and medical data logging requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature performance.
Supply support for IDT6116SA20TP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory, and interface solutions for communications, computing, and industrial markets.
IDT6116SA20TP belongs to IDT's legacy high-reliability CMOS SRAM product line, designed specifically for industrial and military applications demanding guaranteed timing, wide temperature operation, and radiation-hardened process technology.
FAQ
What is the guaranteed access time specification for IDT6116SA20TP?
IDT6116SA20TP guarantees a maximum access time of 20 ns for both address access (tAA) and chip select access (tACS) under industrial temperature conditions (–45°C to +85°C) and 5.0 V ±10% supply. This value is production-tested and applies to read cycles with CS and OE asserted, ensuring deterministic timing for real-time embedded systems.
Does IDT6116SA20TP require a refresh clock or external timing circuitry?
No, IDT6116SA20TP is a fully static RAM and requires no refresh clock, timer, or external timing signals. Its internal circuitry maintains data indefinitely as long as power is applied and CS remains inactive. This eliminates refresh overhead in microcontroller-based designs and simplifies PCB layout by removing clock routing.
What package type is used for IDT6116SA20TP, and is it RoHS-compliant?
IDT6116SA20TP uses a 24-pin SOIC (SO24-2) package with gull-wing leads and 300 mil body width. Per IDT's ordering information and packaging documentation, this variant is manufactured in RoHS-compliant plastic encapsulation and meets JEDEC MS-012 standards for surface-mount assembly.
Can IDT6116SA20TP operate with 3.3 V logic levels?
No, IDT6116SA20TP is specified exclusively for 5.0 V ±10% operation (4.5 V to 5.5 V). Its VIH minimum is 2.2 V and VIL maximum is 0.8 V, aligning with TTL thresholds - it is not 3.3 V tolerant. Applying 3.3 V to VCC will result in undefined operation and potential data corruption.
How does the standby power mode function in IDT6116SA20TP?
IDT6116SA20TP features two standby modes: TTL-level (ISB = 40 mA max when CS > 2.0 V) and CMOS-level (ISB1 = 2 mA max when CS > VCC – 0.2 V). When CS goes HIGH, the device automatically enters low-power state and remains there until CS drops below threshold - enabling significant system-level power savings without software intervention.
IDT6116SA20TP Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-DIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-PDIP
IDT6116SA20TP FAQ
1.How can I place an order for IDT6116SA20TP through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116SA20TP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116SA20TP reliable?
The price and inventory of IDT6116SA20TP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116SA20TP is usually 5 days.
3.What payment methods are accepted for IDT6116SA20TP?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116SA20TP transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116SA20TP?
IDT6116SA20TP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116SA20TP order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116SA20TP?
For technical support, including IDT6116SA20TP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116SA20TP requirements.
6.How does Aetrix verify that IDT6116SA20TP is sourced from the original manufacturer or authorized distributors?
All IDT6116SA20TP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116SA20TP meets industry standards.
7.What is the process for return or replacement of IDT6116SA20TP?
All IDT6116SA20TP units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116SA20TP, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116SA20TP part is unused and in its original packaging.
Return procedure for IDT6116SA20TP:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116SA20TP Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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