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Renesas IDT6116SA25SOI
- Part No.:
- IDT6116SA25SOI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116SA25SOI.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,529
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Product details
Overview
IDT6116SA25SOI from Integrated Device Technology is a 16K-bit (2K × 8) high-speed CMOS static RAM with 25 ns maximum access time, TTL-compatible I/O, and industrial temperature range operation (–45°C to +85°C). It features automatic standby mode on chip select high, low-power operation (80 mA typical ICC1), and 24-pin SOIC packaging. Used in real-time data buffering for industrial controllers and legacy instrumentation systems requiring non-refreshed memory.
For engineers reviewing the IDT6116SA25SOI datasheet, IDT6116SA25SOI pinout, IDT6116SA25SOI application, or IDT6116SA25SOI equivalent, key selection criteria include guaranteed 25 ns read cycle time (tRC), CMOS-level standby current of 2 mA (ISB1), TTL-compatible voltage thresholds (VIH = 2.2 V min, VIL = 0.8 V max), and compatibility with 5.0 V ±10% supply across industrial temperature range.
Technical Context
The IDT6116SA25SOI implements fully static asynchronous logic with no clocks or refresh required. Its address decoder drives a 128 × 128 memory array, and control circuitry supports three operational modes-standby (CS high), read (CS & OE low, WE high), and write (CS & WE low)-with high-impedance I/O during deselect and output enable control.
It uses advanced CMOS process technology to eliminate alpha-particle soft errors and supports dual standby modes: TTL-level (ISB = 40 mA max) and CMOS-level (ISB1 = 2 mA max) power reduction. Input/output pins are directly TTL-compatible, eliminating level-shifting requirements in mixed-logic systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2,048 words × 8 bits); supports byte-wide data bus interfacing without external demultiplexing. |
| Access Time (tAA) | 25 ns max; ensures reliable read timing in 40 MHz bus systems with adequate setup/hold margins. |
| Read Cycle Time (tRC) | 25 ns max; defines minimum consecutive read interval for sustained throughput in burst-access applications. |
| Standby Current (ISB1) | 2 mA max at CMOS-level chip select; enables ultra-low-power hold state when CS > VHC, critical for battery-backed systems. |
| Supply Voltage | 5.0 V ±10%; operates robustly across 4.5–5.5 V, compatible with standard TTL/CMOS logic rails. |
| Operating Temperature | –45°C to +85°C; qualified for industrial environments including factory automation and transportation electronics. |
| I/O Compatibility | TTL-compatible inputs (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and outputs (VOH ≥ 2.4 V, VOL ≤ 0.4 V); interoperable with 74LS/ALS logic families. |
Pinout & Package
Package: 24-pin SOIC (SO24-2), gull-wing surface-mount, 300 mil body width, RoHS-compliant lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus accepting 0–2047 word locations; synchronous with CS/WE/OE for full decoding. |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit TTL-compatible data path; high-impedance when CS high or OE high during reads, driven during writes. |
| CS | Chip Select | Active-low enable; forces standby mode (ISB1 = 2 mA) when high, enabling system-level power gating. |
| WE | Write Enable | Active-low write control; latches data on falling edge when CS is low; disables outputs during write. |
| OE | Output Enable | Active-low output control; allows read data to appear on I/O lines only when CS and OE are both low. |
| VCC | Power Supply | +5 V ±10% supply input; decoupling capacitor required within 1 cm for stable 25 ns operation. |
| GND | Ground Reference | Signal and power ground return; must be low-inductance connection to minimize noise in high-speed access. |
Key Features
| Feature | Design Value |
|---|---|
| Static Operation | No clock or refresh circuitry required-simplifies system design and eliminates refresh overhead in microcontroller-based systems. |
| Two-Tier Standby Mode | Supports both TTL-level (ISB = 40 mA) and CMOS-level (ISB1 = 2 mA) standby, enabling flexible power management strategies. |
| Battery Backup Ready (LA variant only) | Not applicable to IDT6116SA25SOI (SA version); LA variants support 2 V data retention, but SA prioritizes speed over retention. |
| Alpha-Particle Immunity | CMOS fabrication eliminates soft-error susceptibility-critical for long-life industrial deployments without ECC overhead. |
| Military-Grade Packaging Option | Same die available in ceramic DIP (D24-2) for MIL-STD-883 Class B compliance; SOIC variant meets industrial reliability standards. |
Applications
| Industrial PLC Data Buffer | Legacy Test Equipment Memory |
|---|---|
|
Use Scenario: Real-time acquisition and temporary storage of sensor readings in programmable logic controller backplanes. IC Role / Device Role / Timing Role: Byte-wide static RAM providing zero-wait-state data capture at 40 MHz bus rates using 25 ns tRC timing. Use Value: Eliminates need for DRAM refresh logic and external buffers, reducing BOM count and PCB area in space-constrained DIN-rail modules. |
Use Scenario: Storing calibration tables and intermediate measurement results in benchtop oscilloscopes and signal analyzers. IC Role / Device Role / Timing Role: Non-volatile-holding SRAM interface for microprocessor-controlled front-end digitizers with deterministic latency. Use Value: Guarantees 25 ns read access under –45°C to +85°C thermal cycling, ensuring consistent instrument response time across environmental chambers. |
| Avionics Display Frame Buffer | Medical Imaging Control Memory |
|
Use Scenario: Holding display refresh data for monochrome cockpit displays in certified airborne systems. IC Role / Device Role / Timing Role: High-reliability SRAM with alpha-immune CMOS process serving as pixel buffer for FPGA-driven video pipelines. Use Value: Meets DO-254 hardware assurance requirements via proven military-grade process and MIL-STD-883 traceability (shared die lineage). |
Use Scenario: Storing real-time beam control parameters and safety interlock states in X-ray generator subsystems. IC Role / Device Role / Timing Role: Fail-safe memory element retaining configuration integrity during AC line dips or brownouts. Use Value: Supports immediate resumption of imaging sequences after transient faults due to static architecture and fast 25 ns recovery from standby. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 512K × 16-bit, 45 ns access, 3.3 V core, SOIC-44; higher density but slower and different voltage domain. | Requires level shifters and board redesign; unsuitable for direct replacement in 5 V, 2K × 8 footprint-constrained designs. | Select only when migrating to 3.3 V systems and requiring >16K capacity; not drop-in compatible. |
| AS6C1008-25PIN | 128K × 8-bit, 25 ns access, 5 V, PDIP-28; same speed but larger package and higher density. | Pinout incompatible (28-pin vs. 24-pin); requires PCB layout change and additional address decoding logic. | Consider for new designs needing scalability beyond 16K; not suitable for IDT6116SA25SOI footprint replacement. |
Compared with IDT6116SA25SOI, CY62167EV30LL-45ZSXI offers greater density but mandates voltage translation and sacrifices pin compatibility, while AS6C1008-25PIN matches speed but demands mechanical and routing changes-neither provides true drop-in replacement capability.
Availability
IDT6116SA25SOI is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy test equipment memory upgrades, and avionics display frame buffer applications requiring stable component supply across extended product lifecycles.
Supply support for IDT6116SA25SOI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory, and interface solutions for communications, computing, and industrial markets.
IDT6116SA25SOI belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for industrial and military systems demanding deterministic timing, zero-refresh operation, and long-term reliability without ECC overhead.
FAQ
What is the maximum operating temperature range for IDT6116SA25SOI?
IDT6116SA25SOI is rated for industrial temperature operation from –45°C to +85°C. This specification is guaranteed per the ordering information table (DSC-3089/03, page 10), where "I" suffix denotes industrial grade. It is not rated for military (–55°C to +125°C) or commercial (0°C to +70°C) ranges-only the "I" variant meets this exact range.
Does IDT6116SA25SOI support battery backup data retention?
No, IDT6116SA25SOI does not support battery backup data retention. That feature is exclusive to the LA variant (e.g., IDT6116LA25SOI), which specifies 2 V data retention voltage and sub-microwatt standby current. The "SA" in IDT6116SA25SOI explicitly denotes standard power, optimized for speed-not low-voltage retention.
What is the pin-compatible replacement for IDT6116SA25SOI?
There is no verified pin-compatible replacement for IDT6116SA25SOI. Alternative SRAMs like AS6C1008-25PIN or CY62167EV30LL-45ZSXI differ in pin count (28 vs. 24), voltage (3.3 V vs. 5 V), or organization (128K×8 vs. 2K×8), requiring PCB and logic redesign. IDT6116SA25SOI remains the only 24-pin SOIC, 2K×8, 25 ns, 5 V industrial SRAM with this exact footprint and timing.
What is the minimum supply voltage required for IDT6116SA25SOI to meet its 25 ns timing spec?
IDT6116SA25SOI requires VCC = 5.0 V ±10%, meaning 4.5 V minimum, to guarantee 25 ns access time (tAA) and read cycle time (tRC). At voltages below 4.5 V, timing parameters degrade beyond specification-no reduced-voltage timing data is provided in the datasheet for IDT6116SA25SOI.
How does the standby power mode function in IDT6116SA25SOI?
IDT6116SA25SOI enters standby mode automatically when CS is driven HIGH. Two levels exist: TTL-level standby (ISB = 40 mA max) when CS > VIH, and deeper CMOS-level standby (ISB1 = 2 mA max) when CS > VHC (VCC – 0.2 V). Both disable outputs and reduce dynamic current, but ISB1 requires tighter CS threshold control for lowest power.
IDT6116SA25SOI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116SA25SOI FAQ
1.How can I place an order for IDT6116SA25SOI through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116SA25SOI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116SA25SOI reliable?
The price and inventory of IDT6116SA25SOI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116SA25SOI is usually 5 days.
3.What payment methods are accepted for IDT6116SA25SOI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116SA25SOI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116SA25SOI?
IDT6116SA25SOI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116SA25SOI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116SA25SOI?
For technical support, including IDT6116SA25SOI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116SA25SOI requirements.
6.How does Aetrix verify that IDT6116SA25SOI is sourced from the original manufacturer or authorized distributors?
All IDT6116SA25SOI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116SA25SOI meets industry standards.
7.What is the process for return or replacement of IDT6116SA25SOI?
All IDT6116SA25SOI units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116SA25SOI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116SA25SOI part is unused and in its original packaging.
Return procedure for IDT6116SA25SOI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116SA25SOI Tags
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AT24C02C-XHM-T
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