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Renesas IDT6116SA25SOI8
- Part No.:
- IDT6116SA25SOI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116SA25SOI8.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,432
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Product details
Overview
IDT6116SA25SOI8 from Integrated Device Technology is a 16K-bit (2K × 8) high-speed CMOS static RAM with 25 ns maximum access time, TTL-compatible I/O, and industrial temperature range (–45°C to +85°C). It operates at 5.0 V ±10%, supports full static operation without clocks or refresh, and features dual standby modes - TTL-level (ISB = 40 mA max) and CMOS-level (ISB1 = 2 mA max) - for system power optimization in embedded controllers and data acquisition systems.
For engineers reviewing the IDT6116SA25SOI8 datasheet, IDT6116SA25SOI8 pinout, IDT6116SA25SOI8 application, or IDT6116SA25SOI8 equivalent, key selection criteria include guaranteed 25 ns read cycle time (tRC), chip-select–controlled low-power standby, 24-pin SOIC packaging, and compatibility with legacy 2K×8 SRAM-based memory subsystems requiring deterministic timing and zero-refresh operation.
Technical Context
The IDT6116SA25SOI8 implements a fully static asynchronous architecture with no internal clocks or refresh circuitry. Its address decoder drives a 128 × 128 memory array, and all control logic (CS, WE, OE) operates with TTL-level thresholds (VIH = 2.2 V min, VIL = 0.8 V max) under 5 V supply.
It supports three distinct operational states: active read/write (ICC1 = 80 mA max), TTL-level standby (ISB = 40 mA max), and deep CMOS-level standby (ISB1 = 2 mA max), triggered by CS voltage level relative to VIH/VHC thresholds. Data retention is not supported - this is the SA (standard power) variant, not the LA battery-backup version.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 25 ns max - guarantees valid data at I/O pins within 25 ns of stable address and CS assertion |
| Read Cycle Time (tRC) | 25 ns max - defines minimum interval between successive read operations |
| Supply Voltage | 5.0 V ±10% - compatible with standard TTL/CMOS 5 V logic rails; no regulation margin required |
| Operating Temperature | –45°C to +85°C - qualified for industrial environments including factory automation and telecom infrastructure |
| Standby Current (ISB1) | 2 mA max at CMOS-level CS deassertion - enables ultra-low-power hold mode during processor sleep |
| I/O Compatibility | TTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive (VOH ≥ 2.4 V @ –4 mA, VOL ≤ 0.4 V @ 8 mA) |
Pinout & Package
Package: 24-pin SOIC (Small Outline Integrated Circuit), gull-wing lead form, 300 mil body width (SO24-2 per IDT ordering guide).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit binary address bus selecting one of 2,048 memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path; high-impedance when CS high or OE/WE inactive |
| CS | Chip Select | Active-low enable; asserts memory array and I/O drivers; controls standby entry/exit |
| WE | Write Enable | Active-low signal enabling write cycle when CS low; latches data on falling edge |
| OE | Output Enable | Active-low control for output drivers only; allows read data gating independent of CS |
| VCC | Power Supply | +5 V ±10% main supply; powers core logic and I/O buffers |
| GND | Ground Reference | 0 V return path for all internal circuits and I/O signals |
Key Features
| Feature | Design Value |
|---|---|
| Zero-refresh static operation | Eliminates external refresh circuitry and timing constraints - simplifies controller design and reduces BOM count |
| Dual standby power modes | TTL-level (ISB = 40 mA) and CMOS-level (ISB1 = 2 mA) standby reduce system power by >95% vs active mode |
| TTL-compatible interface | Direct connection to legacy microcontrollers and FPGAs without level-shifting or bus buffering |
| Industrial temperature qualification | Validated operation from –45°C to +85°C ensures reliability in uncontrolled ambient environments |
| High-reliability CMOS process | Alpha-particle soft-error rate virtually eliminated - suitable for mission-critical industrial control |
Applications
| Industrial PLC Memory Buffer | Legacy Microcontroller Data RAM |
|---|---|
|
Use Scenario: Storing real-time I/O status, configuration registers, and temporary process variables in programmable logic controllers operating in factory-floor environments. IC Role / Device Role / Timing Role: Byte-accessible, non-refreshing data RAM interfaced directly to 8-bit or 16-bit microcontrollers via parallel bus. Use Value: Deterministic 25 ns access ensures predictable scan-cycle timing; industrial temp rating avoids thermal derating in enclosed cabinets. |
Use Scenario: Serving as primary working RAM for 8051, Z80, or 68000-based embedded systems where board space and power are constrained. IC Role / Device Role / Timing Role: Static RAM replacement for older NMOS or bipolar SRAMs in retro-computing or maintenance-replacement designs. Use Value: Pin- and timing-compatible drop-in upgrade with lower power and higher reliability than obsolete 2114/6116 variants. |
| Telecom Line Card Buffer | Test Equipment Data Capture |
|
Use Scenario: Holding packet headers, channel status, and protocol state in T1/E1 line interface cards deployed in central office environments. IC Role / Device Role / Timing Role: Low-latency, jitter-free memory for real-time framing and error-checking logic. Use Value: 25 ns tRC enables tight integration with FPGA-based framer logic; SOIC package supports high-density PCB layouts. |
Use Scenario: Capturing high-speed analog-to-digital converter outputs in benchtop oscilloscopes and logic analyzers during burst-mode acquisition. IC Role / Device Role / Timing Role: High-speed circular buffer memory synchronized to sample clock and trigger events. Use Value: Asynchronous read/write capability allows independent address generation and data streaming without clock domain crossing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 32K × 8-bit, 45 ns access, 3.3 V supply, industrial temp - larger density but slower and different voltage | Requires level translation and layout revision; suited for capacity upgrades, not direct replacement | Select only if migrating to 3.3 V systems and needing >16K bytes; not pin-compatible with IDT6116SA25SOI8 |
| AS6C1008-25PIN | 128K × 8-bit, 25 ns access, 5 V supply, industrial temp - higher density, same speed and voltage | Pinout differs (28-pin DIP/SOIC); requires PCB redesign and firmware address mapping update | Choose when expanding memory footprint is acceptable; verify address decoding logic supports 128K addressing |
Compared with IDT6116SA25SOI8, CY62167EV30LL-45ZSXIT offers greater density but mandates 3.3 V infrastructure and sacrifices speed, while AS6C1008-25PIN matches speed and voltage but demands physical and logical redesign - neither serves as a drop-in substitute.
Availability
IDT6116SA25SOI8 is available at Aetrix Electronics and suitable for industrial PLCs, legacy microcontroller systems, telecom line cards, and test equipment requiring stable component supply, long-lifecycle support, and verified industrial-temperature performance.
Supply support for IDT6116SA25SOI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in timing, memory, and interface solutions before its acquisition by Renesas Electronics in 2019. IDT delivered high-reliability, high-performance ICs for communications and industrial markets.
IDT6116SA25SOI8 belongs to IDT's legacy 6116-series CMOS SRAM product line, designed specifically for pin-compatible replacement of earlier 2K×8 SRAMs in industrial and telecom systems demanding zero-refresh operation and robust temperature performance.
FAQ
What is the maximum operating temperature range for IDT6116SA25SOI8?
IDT6116SA25SOI8 is rated for industrial temperature operation from –45°C to +85°C. This specification is validated per IDT's commercial and industrial ordering information and confirmed in the Absolute Maximum Ratings table (TA = –45°C to +85°C). It is not rated for military temperature ranges (–55°C to +125°C), which apply only to versions with 'D' or 'Y' suffixes.
Does IDT6116SA25SOI8 support battery backup or data retention mode?
No, IDT6116SA25SOI8 does not support battery backup or low-voltage data retention. It is the SA (standard power) variant, not the LA version. The LA series specifies 2 V data retention voltage and microamp-level retention current; those features are explicitly excluded from IDT6116SA25SOI8 per the device family description and DC Electrical Characteristics tables.
Is IDT6116SA25SOI8 pin-compatible with other 2K×8 SRAMs like the 6116LP or HM6116?
IDT6116SA25SOI8 uses the industry-standard 24-pin 2K×8 SRAM pinout (A0–A10, I/O0–I/O7, CS, WE, OE, VCC, GND), matching HM6116, 6116LP, and most second-source 6116 variants. However, timing parameters (e.g., tRC = 25 ns) and electrical specs (e.g., ISB1 = 2 mA) differ - verify setup/hold times and drive strength in your target system before substitution.
What is the standby current consumption of IDT6116SA25SOI8 when CS is deasserted?
IDT6116SA25SOI8 offers two standby modes: TTL-level standby (ISB = 40 mA max) when CS > VIH, and deeper CMOS-level standby (ISB1 = 2 mA max) when CS > VHC and inputs are held at valid logic levels. ISB1 is the lowest achievable quiescent current and is specified under strict input voltage conditions per Table 8 in the datasheet.
Can IDT6116SA25SOI8 operate reliably at 4.5 V supply voltage?
Yes, IDT6116SA25SOI8 is fully specified for VCC = 4.5 V to 5.5 V (±10% of 5.0 V). All AC and DC parameters - including 25 ns access time, VOH ≥ 2.4 V, and VOL ≤ 0.4 V - are guaranteed across this range. Operation at 4.5 V is compliant and commonly used to accommodate worst-case rail droop in industrial power supplies.
IDT6116SA25SOI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116SA25SOI8 FAQ
1.How can I place an order for IDT6116SA25SOI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116SA25SOI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116SA25SOI8 reliable?
The price and inventory of IDT6116SA25SOI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116SA25SOI8 is usually 5 days.
3.What payment methods are accepted for IDT6116SA25SOI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116SA25SOI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116SA25SOI8?
IDT6116SA25SOI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116SA25SOI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116SA25SOI8?
For technical support, including IDT6116SA25SOI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116SA25SOI8 requirements.
6.How does Aetrix verify that IDT6116SA25SOI8 is sourced from the original manufacturer or authorized distributors?
All IDT6116SA25SOI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116SA25SOI8 meets industry standards.
7.What is the process for return or replacement of IDT6116SA25SOI8?
All IDT6116SA25SOI8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116SA25SOI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116SA25SOI8 part is unused and in its original packaging.
Return procedure for IDT6116SA25SOI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116SA25SOI8 Tags
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