Renesas IDT6116SA35SO

Overview

IDT6116SA35SO from Integrated Device Technology is a 16K-bit (2K × 8) high-speed CMOS static RAM with 35 ns maximum access time, TTL-compatible I/O, and industrial temperature range (–45°C to +85°C). It operates at 5.0 V ±10%, supports full static asynchronous operation without clocks or refresh, and features dual standby modes - TTL-level (25 mA) and CMOS-level (0.1 mA) - for power-sensitive embedded control and data buffering applications.

For engineers reviewing the IDT6116SA35SO datasheet, IDT6116SA35SO pinout, IDT6116SA35SO application, or IDT6116SA35SO equivalent, key selection criteria include guaranteed 35 ns tAA/tACS timing, 24-pin SOIC package compatibility, low-power standby current under CMOS-level chip select, and direct TTL interface capability without level-shifting circuitry.

Technical Context

The IDT6116SA35SO implements a fully static 128 × 128 memory array with address decoding, I/O control, and input data circuitry - all built in high-reliability CMOS technology. Its asynchronous architecture requires no clocks, refresh cycles, or external timing control, enabling deterministic read/write timing across its specified industrial temperature range.

It supports three distinct operational states: active read (CS = L, OE = L, WE = H), active write (CS = L, WE = L), and two-tier standby (ISB = 25 mA at TTL-level CS, ISB1 = 0.1 mA at CMOS-level CS). Input leakage is ≤5 µA, output drive meets TTL VOH ≥2.4 V / VOL ≤0.4 V at rated loads, and all pins are directly compatible with standard TTL logic families.

Key Specifications

Pinout & Package

24-pin Small Outline Integrated Circuit (SOIC), gull-wing package (SO24-2), 300 mil body width, JEDEC MS-012AC compliant. RoHS-compliant lead finish, moisture sensitivity level (MSL) not specified in source documentation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IDT6116SA35SO, CY62167EV30LL-45ZSXI offers higher density and lower voltage operation but lacks native TTL compatibility, while AS6C1008-35PCN matches speed and voltage but requires physical and logical redesign due to increased pin count and memory depth - neither is pin- or functionally interchangeable without hardware changes.

Availability

IDT6116SA35SO is available at Aetrix Electronics and suitable for industrial automation, legacy microcontroller expansion, and telecom infrastructure applications requiring stable component supply, long-lifecycle support, and verified industrial temperature performance.

Supply support for IDT6116SA35SO includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and real-time interconnect solutions for communications, computing, and industrial markets.

IDT6116SA35SO belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for industrial and military applications demanding reliable, low-latency, asynchronous memory with TTL compatibility and wide temperature operation.

FAQ

What is the maximum operating temperature range for IDT6116SA35SO?

IDT6116SA35SO is rated for industrial temperature operation from –45°C to +85°C. This specification is confirmed in the "Recommended Operating Temperature and Supply Voltage" table and applies specifically to the SA-series commercial/industrial variants packaged in SOIC. It does not extend to military-grade versions unless explicitly ordered with MIL-STD-883 qualification.

Does IDT6116SA35SO require a refresh circuit or clock signal?

No, IDT6116SA35SO is a fully static RAM and requires no refresh cycles or clock input. Its internal circuitry maintains data indefinitely as long as power and valid CS levels are maintained. This eliminates timing-critical refresh overhead in microcontroller or FPGA-based systems using IDT6116SA35SO as local scratchpad memory.

What is the difference between ISB and ISB1 current specifications for IDT6116SA35SO?

ISB (25 mA max) is the standby current drawn when CS is held at TTL-high level (≥2.2 V); ISB1 (0.1 mA max) is the ultra-low standby current activated only when CS exceeds the CMOS-high threshold (VCC – 0.2 V). Designers use ISB1 mode to minimize power in battery-backed or energy-harvesting systems where IDT6116SA35SO retains data during sleep states.

Is IDT6116SA35SO pin-compatible with other 24-pin SRAMs like the HM6116 or 6116LP series?

IDT6116SA35SO shares the industry-standard 24-pin SOIC pinout (SO24-2) and functional pin assignments (A0–A10, I/O0–I/O7, CS, WE, OE, VCC, GND) with HM6116 and most 2K × 8 SRAMs. However, timing parameters, standby current behavior, and DC thresholds differ - direct substitution requires verification of tAA, ISB1, and VIH/VIL margins in the target application.

Can IDT6116SA35SO be used with a 3.3 V microcontroller interface?

IDT6116SA35SO is specified for 5.0 V ±10% operation and has TTL-compatible thresholds (VIH ≥2.2 V, VIL ≤0.8 V), making it interoperable with 3.3 V microcontrollers only if their outputs meet these voltage levels. Most 3.3 V GPIOs drive VIH = 2.0 V min - marginal for reliable IDT6116SA35SO recognition. A level translator or pull-up resistor network is recommended for robust interfacing with IDT6116SA35SO.