Renesas IDT6116SA35SO8

Overview

IDT6116SA35SO8 from Integrated Device Technology is a 16K-bit (2K × 8) high-speed CMOS static RAM with 35 ns maximum access time, TTL-compatible I/O, and industrial temperature range (–45°C to +85°C). It operates at 5.0 V ±10%, supports asynchronous read/write cycles without clocks or refresh, and features dual standby modes - TTL-level (25 mA) and CMOS-level (0.1 mA) - for system power optimization in embedded controllers and data acquisition systems.

For engineers reviewing the IDT6116SA35SO8 datasheet, IDT6116SA35SO8 pinout, IDT6116SA35SO8 application, or IDT6116SA35SO8 equivalent, this page delivers verified timing parameters, package-specific pin mapping, real-world use cases in legacy industrial control and instrumentation, and two validated alternative SRAMs with documented functional and thermal differences.

Technical Context

The IDT6116SA35SO8 implements fully static asynchronous operation using advanced CMOS technology, eliminating need for clocks or refresh cycles. Its address decoder drives a 128 × 128 memory array, with independent chip select (CS), output enable (OE), and write enable (WE) controls enabling flexible bus interfacing in microprocessor-based systems.

It supports three distinct operating modes: active read (CS=L, OE=L, WE=H), active write (CS=L, WE=L), and two-tier standby (CS=H for TTL-level ISB=25 mA; CS > VHC with CMOS-level inputs for ISB1=0.1 mA). Input leakage is ≤5 µA, output drive meets TTL specs (VOL ≤0.4 V at 8 mA, VOH ≥2.4 V at –4 mA), and all pins are directly TTL-compatible.

Key Specifications

Pinout & Package

Package: 24-pin Small Outline IC (SOIC), 300-mil body width (SO24-2), gull-wing leads, JEDEC MS-013 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IDT6116SA35SO8, CY62167EV30LL-45ZSXI offers greater density at lower voltage but demands full system redesign, while AS6C1008-35PCN provides scalable capacity with minimal timing or voltage changes - making it the closer functional match for incremental upgrades.

Availability

IDT6116SA35SO8 is available at Aetrix Electronics and suitable for industrial control systems, legacy test equipment refurbishment, and embedded instrumentation requiring stable component supply across extended product lifecycles.

Supply support for IDT6116SA35SO8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a fabless semiconductor company specializing in timing, memory, and interface solutions before its acquisition by Renesas in 2019. Known for high-reliability SRAMs and clock devices.

IDT6116SA35SO8 belongs to IDT's legacy 6116-series high-speed CMOS SRAM family, designed specifically for industrial and military applications demanding zero-refresh operation, wide temperature tolerance, and TTL compatibility in resource-constrained embedded systems.

FAQ

What is the maximum operating frequency supported by IDT6116SA35SO8?

IDT6116SA35SO8 does not operate on a clock signal - it is an asynchronous static RAM. Its 35 ns access time defines the minimum read cycle time (tRC = 35 ns), allowing reliable interface with microprocessors running up to approximately 28.5 MHz bus frequency when no wait states are inserted. Timing compliance depends on proper setup/hold margins for address, CS, OE, and WE signals per AC Electrical Characteristics Table 12.

Does IDT6116SA35SO8 support battery backup for data retention?

IDT6116SA35SO8 is the standard-power (SA) variant and does not support battery backup data retention. That feature is exclusive to the LA version (e.g., IDT6116LA35SO8), which specifies 2 V data retention voltage and sub-1 µA retention current. The SA version enters low-power standby (0.1 mA) when CS is deasserted but requires continuous VCC to retain data.

Is IDT6116SA35SO8 pin-compatible with other 24-pin SRAMs like the HM6116 or 2114?

IDT6116SA35SO8 is functionally and pinout-compatible with industry-standard 2K × 8 SRAMs including the HM6116 and original 2114, sharing identical pin assignments for A0–A10, I/O0–I/O7, CS, WE, OE, VCC, and GND. However, timing parameters differ: HM6116 typically has 200 ns access, while IDT6116SA35SO8 guarantees 35 ns - enabling faster system performance without layout change.

What is the difference between ISB and ISB1 standby current specifications for IDT6116SA35SO8?

IDT6116SA35SO8 specifies two standby currents: ISB = 25 mA max (TTL-level standby, triggered when CS > VIH) and ISB1 = 0.1 mA max (CMOS-level standby, triggered when CS > VHC and all inputs held at valid CMOS levels). ISB1 enables ultra-low-power operation in battery-buffered or energy-sensitive applications, while ISB suits simpler control logic where CS is driven by TTL outputs.

Can IDT6116SA35SO8 be used in place of IDT6116LA35SO8 in a design?

IDT6116SA35SO8 can replace IDT6116LA35SO8 electrically in non-battery-backed applications, as both share identical timing, pinout, and DC specs - except LA's 2 V retention capability and lower ISB1 (0.1 mA vs SA's 0.1 mA, same value). However, substituting SA for LA forfeits data retention during VCC loss, so verification of system-level power failover behavior is essential before replacement.