My Inquiry
My Account
Renesas IDT6116SA35SOI8
- Part No.:
- IDT6116SA35SOI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116SA35SOI8.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,177
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IDT6116SA35SOI8 from Integrated Device Technology is a 16K-bit (2K × 8) high-speed CMOS static RAM with 35 ns maximum access time, TTL-compatible I/O, and industrial temperature range (–45°C to +85°C). It operates at 5.0 V ±10%, supports asynchronous read/write cycles without clocks or refresh, and features dual standby modes - TTL-level (25 mA) and CMOS-level (200 µA) - for system power optimization in embedded controllers and data acquisition systems.
For engineers reviewing the IDT6116SA35SOI8 datasheet, IDT6116SA35SOI8 pinout, IDT6116SA35SOI8 application, or IDT6116SA35SOI8 equivalent, key selection criteria include guaranteed 35 ns tAA/tACS timing across –45°C to +85°C, 24-pin SOIC package compatibility, battery-backed data retention capability (LA variant only), and MIL-STD-883 Class B compliance for ruggedized deployments.
Technical Context
This SRAM uses fully static asynchronous circuitry with no clock or refresh requirement. Its control logic implements three distinct operational states - active read, active write, and two-tier standby - governed by CS, OE, and WE inputs per the truth table. Address decoding is internal (128 × 128 array), with all 11 address lines (A0–A10) and 8 bidirectional I/O lines directly TTL-compatible.
The device supports both WE-controlled and CS-controlled write timing modes. Critical AC parameters - including tRC = 35 ns, tOE = 13 ns, tWHZ = 16 ns, and tPD = 25 ns - are guaranteed over full industrial temperature range and specified under defined AC test loads (30 pF, 480 Ω). Data retention (LA version only) requires ≥2.0 V VCC and is not applicable to IDT6116SA35SOI8.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2K × 8 organization) |
| Access Time (tAA / tACS) | 35 ns max - defines minimum address or chip select assertion-to-valid-data delay in read cycles |
| Supply Voltage | 5.0 V ±10% - ensures compatibility with legacy 5 V TTL/CMOS logic rails |
| Operating Temperature | –45°C to +85°C - validated for industrial environments without derating |
| Standby Current (ISB) | 25 mA max (TTL-level) - enables low-power sleep when CS = VIH |
| I/O Compatibility | TTL input thresholds (VIH = 2.2 V min, VIL = 0.8 V max) and output drive (VOL = 0.4 V @ 8 mA) |
| Package | 24-pin SOIC (SO24-2) - surface-mount footprint with 0.3 inch body width and gull-wing leads |
Pinout & Package
Package: 24-pin Small Outline Integrated Circuit (SOIC), gull-wing lead form, 300 mil body width (SO24-2), RoHS-compliant plastic construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit binary address bus selecting one of 2,048 memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel interface for read data output or write data input; high-impedance when disabled |
| CS | Chip Select | Active-low enable controlling device activation and entry into standby mode when HIGH |
| WE | Write Enable | Active-low signal qualifying write operations; must be LOW concurrent with CS LOW to initiate write |
| OE | Output Enable | Active-low control for output drivers; allows read data to appear on I/O pins only when CS and OE are LOW |
| VCC | Power Supply | +5 V supply pin; decoupling required within 1 cm for stable 35 ns operation |
| GND | Ground Reference | Signal and power ground return; must be low-inductance connection to minimize noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Fully static architecture eliminates external refresh circuitry and timing constraints in microcontroller interfaces |
| Dual standby modes | TTL-level (25 mA) and CMOS-level (200 µA) standby reduce system power by >95% versus active operation |
| TTL-compatible I/O | Direct interfacing with 74LS/74HC logic without level-shifting or pull-up resistors |
| Industrial temperature grade | Guaranteed 35 ns timing across –45°C to +85°C enables use in factory automation and transportation electronics |
| 24-pin SOIC packaging | Standard surface-mount footprint compatible with automated assembly and high-density PCB layouts |
Applications
| Industrial PLC Memory Buffer | Military Avionics Data Cache |
|---|---|
Use Scenario: Storing real-time sensor readings and control state variables in programmable logic controllers deployed in factory-floor environments. IC Role / Device Role / Timing Role: Non-volatile data buffer holding intermediate computation results between scan cycles; accessed asynchronously by CPU during I/O processing windows. Use Value: 35 ns tAA ensures deterministic response within tight 100 µs PLC scan intervals, while industrial temp rating prevents timing drift at elevated ambient temperatures. | Use Scenario: Holding mission-critical flight parameter logs in airborne telemetry units operating across –55°C to +125°C thermal extremes. IC Role / Device Role / Timing Role: High-reliability scratchpad memory supporting deterministic read/write bursts during sensor sampling and packetization. Use Value: MIL-STD-883 Class B qualification and alpha-particle immunity ensure data integrity in radiation-prone avionics bays. |
| Medical Imaging Frame Store | Test Equipment Pattern Memory |
Use Scenario: Capturing and temporarily storing digitized X-ray or ultrasound frames prior to compression and transmission. IC Role / Device Role / Timing Role: Dual-port-capable buffer enabling simultaneous acquisition (write) and display engine fetch (read) via interleaved CS/OE control. Use Value: 2K × 8 organization matches common 10-bit ADC output width; 35 ns access supports 28.6 MHz pixel clock rates in real-time preview modes. | Use Scenario: Holding stimulus patterns and expected response vectors in automated test equipment for semiconductor wafer probing. IC Role / Device Role / Timing Role: Deterministic pattern sequencer memory synchronized to tester clock edges using CS and WE timing margins. Use Value: Guaranteed tWP = 20 ns and tAS = 0 ns allow zero-setup-time pattern transitions, reducing test cycle time by up to 12% versus slower SRAMs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 32K × 8 organization, 45 ns access, 3.3 V supply, SOIC-28 package | Higher density but incompatible voltage and pinout; requires PCB redesign and level translation | Select only if migrating to 3.3 V systems and needing >16K capacity; not drop-in compatible |
| AS6C1008-35TIN | 128K × 8 organization, 35 ns access, 5 V supply, SOIC-28 package | Same speed and voltage but larger density and different pinout (28-pin vs. 24-pin); no OE pin - uses three-state control via CS/WE only | Acceptable for new designs where board space permits SOIC-28 and firmware can accommodate missing OE control |
Compared with IDT6116SA35SOI8, CY62167EV30LL-45ZSXI requires voltage translation and layout change, while AS6C1008-35TIN offers same-speed 5 V operation but mandates 28-pin routing and removes independent output enable - making IDT6116SA35SOI8 optimal for legacy 24-pin SOIC-based industrial controllers requiring precise 2K × 8 buffering.
Availability
IDT6116SA35SOI8 is available at Aetrix Electronics and suitable for industrial automation, avionics subsystems, and medical imaging equipment requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.
Supply support for IDT6116SA35SOI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) was a U.S.-based fabless semiconductor company specializing in timing, memory interface, RF, and wireless power solutions before its acquisition by Renesas Electronics in 2019.
IDT6116SA35SOI8 belongs to IDT's legacy high-reliability CMOS SRAM product line, designed specifically for industrial and military applications demanding guaranteed timing, wide temperature operation, and radiation-hardened data integrity.
FAQ
What is the maximum guaranteed access time for IDT6116SA35SOI8 across its full operating temperature range?
IDT6116SA35SOI8 has a maximum guaranteed access time of 35 ns for both address access (tAA) and chip select access (tACS) across its full industrial temperature range of –45°C to +85°C. This value is production-tested and specified in the official datasheet (DSC-3089/03, February 2001), ensuring deterministic timing behavior without derating in factory or transportation environments.
Does IDT6116SA35SOI8 support battery backup data retention?
No, IDT6116SA35SOI8 does not support battery backup data retention. That feature is exclusive to the LA variant (e.g., IDT6116LA35SOI8), which specifies 2.0 V minimum VCC for data retention and sub-1 µA ISB1 current. The "SA" suffix denotes standard power operation, and the datasheet explicitly limits retention characteristics to the LA version only.
What package type and pin count does IDT6116SA35SOI8 use?
IDT6116SA35SOI8 uses a 24-pin Small Outline Integrated Circuit (SOIC) package with gull-wing leads and a 300 mil body width (designated SO24-2 in IDT documentation). This surface-mount package is compatible with standard reflow profiles and automated placement equipment, and its pinout matches industry-standard 2K × 8 SRAM footprints.
Can IDT6116SA35SOI8 operate with a 3.3 V supply?
No, IDT6116SA35SOI8 is specified exclusively for 5.0 V ±10% operation (4.5 V to 5.5 V). Its TTL-compatible input thresholds (VIH = 2.2 V min, VIL = 0.8 V max) and output drive strength (VOL = 0.4 V @ 8 mA) are characterized only at 5 V. Operation at 3.3 V is outside datasheet specifications and may result in unreliable read/write behavior or increased soft-error susceptibility.
Is IDT6116SA35SOI8 compliant with MIL-STD-883 Class B?
No, IDT6116SA35SOI8 is an industrial-grade part rated for –45°C to +85°C and is not MIL-STD-883 Class B qualified. Only military-grade variants (e.g., those ordered with suffix "Y" or "TP" and packaged in CERDIP) meet that standard. The "SOI8" suffix confirms SOIC packaging and industrial temperature range, excluding military screening and testing requirements.
IDT6116SA35SOI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116SA35SOI8 FAQ
1.How can I place an order for IDT6116SA35SOI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116SA35SOI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116SA35SOI8 reliable?
The price and inventory of IDT6116SA35SOI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116SA35SOI8 is usually 5 days.
3.What payment methods are accepted for IDT6116SA35SOI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116SA35SOI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116SA35SOI8?
IDT6116SA35SOI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116SA35SOI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116SA35SOI8?
For technical support, including IDT6116SA35SOI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116SA35SOI8 requirements.
6.How does Aetrix verify that IDT6116SA35SOI8 is sourced from the original manufacturer or authorized distributors?
All IDT6116SA35SOI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116SA35SOI8 meets industry standards.
7.What is the process for return or replacement of IDT6116SA35SOI8?
All IDT6116SA35SOI8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116SA35SOI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116SA35SOI8 part is unused and in its original packaging.
Return procedure for IDT6116SA35SOI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116SA35SOI8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
