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Renesas IDT6116SA35TP

Part No.:
IDT6116SA35TP
Manufacturer:
Renesas
Category:
Memory
Package:
24-DIP (0.300", 7.62mm)
Datasheet:
AetrixIDT6116SA35TP.pdf
Description:
IC SRAM 16KBIT PARALLEL 24DIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,679

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Product details

Overview

IDT6116SA35TP from Integrated Device Technology is a 16K-bit (2K × 8) high-speed CMOS static RAM with 35 ns maximum access time, TTL-compatible I/O, and industrial temperature range (–45°C to +85°C). It operates at 5.0 V ±10%, supports asynchronous read/write cycles without clocks or refresh, and features dual standby modes - TTL-level (25 mA) and CMOS-level (2 mA) - for system power optimization in embedded controllers and data acquisition systems.

For engineers reviewing the IDT6116SA35TP datasheet, IDT6116SA35TP pinout, IDT6116SA35TP application, or IDT6116SA35TP equivalent, key selection considerations include its 24-pin plastic DIP (P24-1) package, 2K × 8 organization, guaranteed tAA ≤ 35 ns and tRC = 35 ns, low-power standby capability, and compatibility with legacy 6116-family designs requiring industrial-grade reliability.

Technical Context

The IDT6116SA35TP implements fully static asynchronous logic with no internal clocks or refresh circuitry. Its address decoder drives a 128 × 128 memory array, and control logic manages three-state I/O via independent CS, OE, and WE inputs. Read and write operations are decoupled: OE enables output drivers during reads, while WE gates write data latching - both active-low and TTL-compatible.

Two distinct standby modes are supported: TTL-level standby (ISB = 25 mA max) activates when CS > VIH, and full CMOS-level standby (ISB1 = 2 mA max) engages when CS > VHC and input levels are valid, enabling deep power savings in battery-backed or intermittently active systems. Data retention is not supported - that function is exclusive to the LA variant.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size 16,384 bits (2,048 words × 8 bits) - fits compact firmware buffers or real-time data logging in space-constrained 8-bit systems.
Access Time (tAA) ≤35 ns max - enables direct interface with 20 MHz Z80, 8085, or 68000-based bus systems without wait states.
Supply Voltage 5.0 V ±10% - compatible with standard TTL/CMOS logic rails; no external regulation required.
Operating Temperature –45°C to +85°C - qualified for industrial environments including factory automation and telecom line cards.
Standby Current (ISB1) 2 mA max (CMOS-level) - reduces idle power by >95% vs. active mode (ICC1 = 80 mA), critical for energy-sensitive applications.
I/O Compatibility TTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive (VOH ≥ 2.4 V @ –4 mA, VOL ≤ 0.4 V @ 8 mA) - ensures plug-and-play integration with legacy microprocessor buses.
Package 24-pin 300-mil plastic DIP (P24-1) - supports through-hole prototyping and high-reliability industrial PCB assembly.

Pinout & Package

Package: 24-pin 300-mil plastic DIP (P24-1), through-hole mounting, JEDEC MS-001 compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A10 Address Inputs 11-bit binary address bus; selects one of 2,048 memory locations; TTL-compatible, no pull-ups required.
I/O0–I/O7 Bi-directional Data Bus 8-bit parallel data path; high-impedance when CS or OE inactive; drives/receives TTL levels directly.
CS Chip Select Active-low enable; asserts memory access; controls TTL- and CMOS-level standby entry/exit based on voltage threshold.
WE Write Enable Active-low write strobe; latches data on falling edge; must be coordinated with CS for valid write cycles.
OE Output Enable Active-low output control; enables I/O drivers during reads; independent of WE, allowing read-modify-write sequences.
VCC Power Supply +5 V supply pin; bypassing with 0.1 µF ceramic capacitor adjacent to pin is recommended for noise immunity.
GND Ground Reference Signal and power ground return; requires low-impedance connection to system ground plane.

Key Features

Feature Design Value
No refresh required Fully static architecture eliminates DRAM-style refresh overhead and timing constraints in microcontroller systems.
Dual standby modes TTL-level (25 mA) and CMOS-level (2 mA) standby reduce system power across operational states without external logic.
TTL-compatible I/O Direct interface with 8080, Z80, 6800, and 68000 families - no level-shifting or bus transceivers needed.
Industrial temperature grade –45°C to +85°C operation validated per MIL-STD-883 Class B test methods - suitable for uncontrolled industrial enclosures.
Low alpha-particle sensitivity CMOS process minimizes soft-error rate - critical for long-term data integrity in non-volatile buffer applications.

Applications

Industrial PLC Data Buffer Legacy Microprocessor System Memory

Use Scenario: Storing real-time I/O scan data between programmable logic controller (PLC) CPU cycles in factory automation cabinets.

IC Role / Device Role / Timing Role: Asynchronous 2K × 8 SRAM providing zero-wait-state memory access for deterministic scan cycle timing.

Use Value: 35 ns tAA ensures full data capture within tight 10 µs I/O update windows; industrial temp rating sustains reliability at cabinet ambient up to +85°C.

Use Scenario: Expanding onboard RAM in vintage 8-bit embedded systems such as medical instrument controllers or test equipment based on Z80 or 8085 CPUs.

IC Role / Device Role / Timing Role: Drop-in replacement for original 6116 SRAMs, delivering identical pinout and timing while improving standby power efficiency.

Use Value: 2 mA CMOS-level standby current extends battery backup runtime in portable diagnostic devices; TTL compatibility avoids redesign of address/data bus termination.

Telecom Line Card Buffer Avionics Maintenance Terminal Memory

Use Scenario: Holding configuration tables and status logs in carrier-grade DSLAM or T1/E1 line cards operating in temperature-controlled but vibration-prone central office environments.

IC Role / Device Role / Timing Role: Non-refreshing static RAM serving as fast-access scratchpad for protocol stack variables and alarm history.

Use Value: 24-pin DIP package allows field-replaceable module design; 35 ns access supports 28.8 Mbps serial framing logic with margin.

Use Scenario: Supporting built-in test (BIT) and fault logging in aircraft maintenance terminals deployed in hangar or ramp environments.

IC Role / Device Role / Timing Role: Primary working memory for BIT firmware execution and sensor calibration data storage during pre-flight checks.

Use Value: –45°C to +85°C qualification meets DO-160 Section 22 temperature requirements; low soft-error rate ensures data integrity over 20-year service life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY6116BV35LL-PLXC 35 ns access, 5 V, 2K × 8, SOIC-28 package - larger footprint, different pinout, no DIP option. Requires PCB layout change; better suited for new surface-mount designs than legacy through-hole upgrades. Select if migrating to SMT and need Cypress's extended lifecycle support beyond IDT's discontinued status.
AS6C1008-35PCN 35 ns access, 5 V, 2K × 8, 24-pin DIP - same package and pinout; lower ICC1 (65 mA vs. 80 mA) but no industrial temp rating (0°C to +70°C only). Limited to commercial-temperature applications; unsuitable for factory-floor or outdoor telecom deployments. Choose for cost-sensitive commercial systems where ambient stays below +70°C and board space allows same-footprint replacement.

Compared with IDT6116SA35TP, CY6116BV35LL-PLXC demands PCB redesign due to SOIC-28 packaging, while AS6C1008-35PCN matches the DIP-24 footprint but sacrifices industrial temperature capability - making IDT6116SA35TP uniquely suited for drop-in upgrades in harsh-environment legacy systems.

Availability

IDT6116SA35TP is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy microprocessor system memory expansion, and telecom line card applications requiring stable component supply across extended product lifecycles.

Supply support for IDT6116SA35TP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in timing, memory, and interface ICs before its acquisition by Renesas Electronics in 2019. It pioneered high-reliability CMOS SRAMs for military and industrial use.

IDT6116SA35TP belongs to IDT's 6116SA family of high-speed static RAMs, designed specifically for drop-in compatibility with industry-standard 2K × 8 memory sockets in industrial control, instrumentation, and communications equipment.

FAQ

What is the maximum guaranteed access time for IDT6116SA35TP?

The IDT6116SA35TP has a maximum guaranteed address access time (tAA) of 35 ns and a read cycle time (tRC) of 35 ns, both specified across the full industrial temperature range (–45°C to +85°C) at VCC = 5.0 V ±10%. These values are production-tested and apply to the SA (standard power) variant in the P24-1 package.

Does IDT6116SA35TP support battery backup or data retention?

No, IDT6116SA35TP does not support battery backup or low-voltage data retention. That capability is exclusive to the LA (low-power) variants such as IDT6116LA35TP, which specify 2 V data retention voltage and sub-µA retention current. The SA suffix denotes standard power operation only.

What package type is used for IDT6116SA35TP?

IDT6116SA35TP uses a 24-pin 300-mil plastic DIP package, designated P24-1 in IDT's ordering nomenclature. This through-hole package is compatible with standard DIP-24 sockets and supports manual or wave-solder assembly in industrial PCBs.

Can IDT6116SA35TP be used as a direct replacement for older 6116-series SRAMs?

Yes, IDT6116SA35TP is pin-compatible and functionally equivalent to other 2K × 8 6116-family SRAMs with 24-pin DIP packaging, including the original Mostek MK6116 and early IDT IDT6116SA variants. Its TTL-compatible I/O, identical pinout, and 35 ns timing make it a verified drop-in upgrade for legacy systems.

What are the standby current specifications for IDT6116SA35TP?

IDT6116SA35TP specifies two standby current modes: ISB = 25 mA maximum under TTL-level standby (CS > VIH), and ISB1 = 2 mA maximum under full CMOS-level standby (CS > VHC with valid input levels). Both are measured at VCC = 5.5 V and f = 0, enabling significant system-level power savings during idle periods.

IDT6116SA35TP Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
24-DIP (0.300", 7.62mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Kbit
Memory Organization:
2K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
35ns
Access Time:
35 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
24-PDIP

IDT6116SA35TP FAQ

1.How can I place an order for IDT6116SA35TP through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT6116SA35TP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT6116SA35TP reliable?

The price and inventory of IDT6116SA35TP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116SA35TP is usually 5 days.

3.What payment methods are accepted for IDT6116SA35TP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116SA35TP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT6116SA35TP?

IDT6116SA35TP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT6116SA35TP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT6116SA35TP?

For technical support, including IDT6116SA35TP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116SA35TP requirements.

6.How does Aetrix verify that IDT6116SA35TP is sourced from the original manufacturer or authorized distributors?

All IDT6116SA35TP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116SA35TP meets industry standards.

7.What is the process for return or replacement of IDT6116SA35TP?

All IDT6116SA35TP units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116SA35TP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT6116SA35TP part is unused and in its original packaging.

Return procedure for IDT6116SA35TP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT6116SA35TP Tags

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