Renesas IDT6116SA45SO

Overview

IDT6116SA45SO from Integrated Device Technology is a 16K-bit (2K × 8) high-speed CMOS static RAM with 45 ns maximum access time, TTL-compatible I/O, and industrial temperature range (–45°C to +85°C). It operates at 5.0 V ±10%, supports asynchronous read/write cycles without clocks or refresh, and features dual standby modes - TTL-level (25 mA) and CMOS-level (2 mA) - for system power optimization in embedded controllers and data acquisition systems.

For engineers reviewing the IDT6116SA45SO datasheet, IDT6116SA45SO pinout, IDT6116SA45SO application, or IDT6116SA45SO equivalent, key selection considerations include its 24-pin SOIC package, 2K × 8 organization, guaranteed 45 ns tRC across industrial temperature, battery-retention capability (LA variant only), and compatibility with legacy 6116-family board designs requiring low-power static memory.

Technical Context

The IDT6116SA45SO implements fully static asynchronous logic with no internal clocks or refresh circuitry. Its address decoder drives a 128 × 128 memory array, and control logic manages three-state I/O via independent CS, OE, and WE inputs - enabling read, write, and high-impedance standby modes per the truth table.

It uses advanced CMOS process technology to eliminate alpha-particle soft errors and ensure reliability in industrial environments. The device supports two standby power states: TTL-level standby (ISB = 25 mA max) when CS > VIH, and ultra-low CMOS-level standby (ISB1 = 2 mA max) when CS > VHC and inputs are driven to valid logic levels.

Key Specifications

Pinout & Package

Package: 24-pin SOIC (gull-wing, 300 mil width), JEDEC MS-013 compliant, surface-mountable with 0.050" lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IDT6116SA45SO, CY62167EV30LL-45ZSXI offers higher density and 3.3 V operation but demands voltage translation and layout change, while AS6C1008-45ZIN provides greater capacity at 5 V but requires SOIC-28 routing and address bus extension - neither is pin-compatible, making IDT6116SA45SO the only drop-in replacement for existing 24-pin SOIC 2K × 8 designs.

Availability

IDT6116SA45SO is available at Aetrix Electronics and suitable for industrial automation, legacy embedded controller upgrades, and test equipment requiring stable component supply with long-term lifecycle support and traceable sourcing.

Supply support for IDT6116SA45SO includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.

The IDT6116SA/LA product line was designed as a high-reliability, drop-in compatible successor to the industry-standard 2K × 8 SRAM family, targeting applications demanding military- and industrial-grade temperature performance without sacrificing speed or power efficiency.

FAQ

What is the maximum operating temperature range for IDT6116SA45SO?

IDT6116SA45SO is rated for industrial temperature operation from –45°C to +85°C. This specification is guaranteed per the datasheet's Recommended Operating Conditions table and applies to all AC and DC parameters including access time, power consumption, and I/O voltage thresholds. The device does not support military-grade (–55°C to +125°C) operation - that capability is reserved for versions marked with 'D' or 'Y' suffixes in the ordering information.

Does IDT6116SA45SO support battery backup data retention?

No, IDT6116SA45SO does not support battery backup data retention. That feature is exclusive to the LA variant (e.g., IDT6116LA45SO), which specifies 2 V data retention voltage and sub-microwatt standby current. The 'SA' suffix denotes standard power operation, and the datasheet explicitly limits data retention capability to LA versions only - confirmed in Table 10 (Data Retention Characteristics) and the Features section.

Is IDT6116SA45SO pin-compatible with other 2K × 8 SRAMs like the HM6116 or IS61C256?

IDT6116SA45SO is pin-compatible with the industry-standard 24-pin 2K × 8 SRAM footprint, including HM6116 and early IS61C256 variants, as all use identical pin assignments for A0–A10, I/O0–I/O7, CS, WE, OE, VCC, and GND. However, IS61C256 is a 32K × 8 device in a 28-pin package - only 24-pin 2K × 8 SRAMs share direct mechanical and electrical compatibility with IDT6116SA45SO.

What is the difference between ISB and ISB1 standby current specifications for IDT6116SA45SO?

ISB (25 mA max) is the TTL-level standby current drawn when CS > VIH (≥2.2 V), suitable for simple logic-driven deactivation. ISB1 (2 mA max) is the CMOS-level standby current activated only when CS > VHC (VCC – 0.2 V) and all inputs are held at valid logic levels - enabling deeper power savings in systems with clean, rail-swing control signals. Both values are specified in Table 8 for the SA45 speed grade.

Can IDT6116SA45SO operate reliably at 4.5 V supply voltage?

Yes, IDT6116SA45SO is fully specified to operate at VCC = 4.5 V (minimum per DC Electrical Characteristics Table 6), with all timing parameters including tRC = 45 ns and tAA = 45 ns guaranteed across the full industrial temperature range. VOH remains ≥2.4 V and VOL ≤0.4 V at 4.5 V, ensuring robust TTL compatibility even at the lower end of the 5.0 V ±10% supply window.