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Renesas IDT6116SA45SO8
- Part No.:
- IDT6116SA45SO8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116SA45SO8.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,295
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Product details
Overview
IDT6116SA45SO8 from Integrated Device Technology is a 16K-bit (2K × 8) high-speed CMOS static RAM with 45 ns maximum access time, TTL-compatible I/O, and industrial temperature range (–45°C to +85°C). It operates at 5.0 V ±10%, supports asynchronous read/write cycles without clocks or refresh, and features dual standby modes - TTL-level (25 mA) and CMOS-level (2 mA) - for system power optimization in embedded controllers and data acquisition systems.
For engineers reviewing the IDT6116SA45SO8 datasheet, IDT6116SA45SO8 pinout, IDT6116SA45SO8 application, or IDT6116SA45SO8 equivalent, key selection considerations include its 24-pin SOIC package, 2K × 8 organization, guaranteed tAA ≤ 45 ns at VCC = 4.5–5.5 V, battery-retention capability (LA variant only), and compatibility with legacy 6116-family address/data bus interfaces.
Technical Context
The IDT6116SA45SO8 implements fully static asynchronous logic with no internal clocks or refresh circuitry. Its memory array is organized as 128 × 128 bits, decoded via a dedicated address decoder driving 11 address inputs (A0–A10) and enabling 2K words of 8-bit data.
Control is managed through three independent TTL-compatible active-low signals: Chip Select (CS), Output Enable (OE), and Write Enable (WE). The device enters low-power standby when CS is HIGH, with two distinct current states - ISB = 25 mA (TTL-level CS) and ISB1 = 2 mA (CMOS-level CS) - determined by input voltage thresholds relative to VHC/VLC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2K × 8), directly replaces industry-standard 6116 SRAMs in byte-wide data buses. |
| Access Time (tAA) | ≤ 45 ns max at VCC = 4.5–5.5 V, enabling operation with 22 MHz bus timing in industrial systems. |
| Supply Voltage | 5.0 V ±10% (4.5–5.5 V), compatible with standard TTL/CMOS logic rails without level-shifting. |
| Standby Current (ISB1) | 2 mA max at CMOS-level CS (VCC = 5.5 V), reduces idle power in battery-backed or energy-sensitive applications. |
| Operating Temperature | –45°C to +85°C (industrial grade), qualified per MIL-STD-883 Class B test methods for reliability. |
| I/O Compatibility | TTL-input and TTL-output levels (VIH ≥ 2.2 V, VOL ≤ 0.4 V @ 8 mA), ensures direct interface with 74LS/ALS logic families. |
| Package | 24-pin SOIC (SO24-2), 300-mil width, surface-mount compatible with standard PCB reflow profiles. |
Pinout & Package
24-pin Small Outline Integrated Circuit (SOIC), 300-mil body width, gull-wing lead form (SO24-2), JEDEC MS-012AC compliant. RoHS-compliant lead finish, moisture sensitivity level (MSL) not specified in source documentation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit binary address bus; selects one of 2,048 memory locations; latched on CS transition for asynchronous access. |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel data path; high-impedance during standby or write cycles; drives/receives TTL-level signals. |
| CS | Chip Select | Active-low enable; asserts memory access when LOW; forces full standby (ISB1 = 2 mA) when HIGH at CMOS threshold. |
| OE | Output Enable | Active-low control for output drivers; allows read data to appear on I/O lines only when CS and OE are both LOW. |
| WE | Write Enable | Active-low write strobe; initiates write cycle when CS and WE are LOW; disables outputs during write (high-Z). |
| VCC | Power Supply | +5 V supply pin; decoupling capacitor required within 10 mm for stable 45 ns timing performance. |
| GND | Ground Reference | Signal and power ground return; must be connected to low-impedance PCB plane to minimize noise coupling into I/O paths. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Fully static architecture eliminates external refresh circuitry, simplifying system design and reducing BOM count. |
| Dual standby modes | Supports both TTL-level (25 mA) and CMOS-level (2 mA) standby, enabling flexible power management based on host controller signaling. |
| TTL-compatible I/O | Direct interface with legacy 74LS/ALS logic families without level shifters, preserving signal integrity in mixed-technology systems. |
| High-reliability CMOS process | Alpha-particle soft-error rate virtually eliminated, suitable for mission-critical industrial and military applications. |
| MIL-STD-883 Class B compliance | Qualified for harsh environments including extended temperature cycling, mechanical shock, and vibration per military standards. |
Applications
| Industrial PLC Data Buffering | Legacy Instrumentation Memory Expansion |
|---|---|
|
Use Scenario: Real-time data logging in programmable logic controllers where deterministic 45 ns memory access ensures cycle-time predictability under interrupt-driven I/O servicing. IC Role / Device Role / Timing Role: Byte-wide static RAM providing non-refreshed scratchpad storage for register-mapped I/O buffers and temporary state variables. Use Value: Eliminates need for external refresh logic while maintaining compatibility with existing 8-bit microcontroller address/data buses. |
Use Scenario: Upgrading memory capacity in discontinued digital multimeters and oscilloscope front-ends requiring drop-in replacement of aging 6116 SRAMs. IC Role / Device Role / Timing Role: Pin- and function-compatible SRAM delivering identical 2K × 8 organization and TTL-level timing to legacy designs. Use Value: Enables long-term serviceability without PCB redesign, leveraging same SOIC footprint and electrical interface as original components. |
| Military Avionics Configuration Storage | Telecom Line Card Buffering |
|
Use Scenario: Storing flight-critical configuration parameters in airborne navigation units operating across –55°C to +125°C (using LA variant; SA variant rated –45°C to +85°C). IC Role / Device Role / Timing Role: High-reliability static RAM with MIL-STD-883 Class B qualification, used for nonvolatile parameter retention during power transitions. Use Value: Guarantees data integrity under extreme thermal stress and radiation exposure, meeting DO-160 environmental test requirements. |
Use Scenario: Temporary packet buffering in T1/E1 line interface cards where low standby current minimizes heat buildup in densely packed chassis. IC Role / Device Role / Timing Role: Low-power SRAM supporting burst-mode read/write operations synchronized to framing clock edges. Use Value: Reduces system cooling load via ISB1 = 2 mA full-standby mode, extending mean time between failures in fanless telecom enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 32K × 8 organization, 45 ns access, 3.3 V supply; no 5 V tolerance; different pinout (28-pin TSOP). | Requires PCB layout change and voltage rail adjustment; unsuitable for direct 5 V TTL bus replacement. | Select only if migrating to 3.3 V systems and increasing memory depth beyond 16K. |
| AS6C1008-45TIN | 128K × 8 organization, 45 ns access, 5 V supply; 28-pin SOIC; higher ICC1 (35 mA vs. 80 mA for IDT6116SA45). | Not pin-compatible; larger density requires address decoding changes; higher standby current negates low-power advantage. | Consider only for new designs needing >16K capacity and willing to modify address mapping logic. |
Compared with CY62167EV30LL-45ZSXIT and AS6C1008-45TIN, the IDT6116SA45SO8 uniquely delivers 2K × 8 density in a 24-pin SOIC at 5 V with verified industrial temperature operation and dual standby modes - making it the only option that preserves legacy board layouts and power budgets without voltage or pinout compromise.
Availability
IDT6116SA45SO8 is available at Aetrix Electronics and suitable for industrial PLCs, legacy instrumentation upgrades, avionics configuration storage, telecom line card buffering, and military embedded systems requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for IDT6116SA45SO8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in timing, memory interface, RF, and sensor solutions before its acquisition by Renesas Electronics in 2019. IDT pioneered high-performance CMOS SRAMs for real-time embedded systems.
The IDT6116SA/LA product line was designed for industrial and military applications demanding reliable, no-refresh, TTL-compatible static RAM with guaranteed timing across wide temperature ranges and multiple packaging options.
FAQ
What is the maximum operating temperature range for IDT6116SA45SO8?
IDT6116SA45SO8 is rated for industrial temperature operation from –45°C to +85°C. This specification is explicitly defined in the "Recommended Operating Temperature and Supply Voltage" table (DSC-3089/03, page 3) and confirmed in the ordering information section for commercial & industrial variants. It does not support the military –55°C to +125°C range, which applies only to DIP and CERDIP packaged versions marked with 'TD' or 'D' prefixes.
Does IDT6116SA45SO8 support battery backup data retention?
No, IDT6116SA45SO8 does not support battery backup data retention. That feature is exclusive to the LA variant (e.g., IDT6116LA45SO8), which specifies VDR = 2.0 V and ICCDR ≤ 300 µA in data retention mode. The 'SA' suffix denotes standard power operation, and the datasheet clearly separates retention characteristics under "Data Retention Characteristics Over All Temperature Ranges (LA Version Only)" on page 4.
What is the pinout compatibility between IDT6116SA45SO8 and other 6116-family SRAMs?
IDT6116SA45SO8 uses the industry-standard 24-pin 6116 pinout: A0–A10 on pins 1–3 and 12–19, I/O0–I/O7 on pins 4–7 and 20–23, CS on pin 18, OE on pin 17, WE on pin 16, VCC on pin 24, and GND on pin 12. This matches all JEDEC-standard 2K × 8 SRAMs including Motorola MCM6116, Hitachi HM6116, and Fujitsu MB8116, enabling direct substitution in SOIC footprints.
What are the two standby current specifications for IDT6116SA45SO8?
IDT6116SA45SO8 specifies two standby currents: ISB = 25 mA maximum (TTL-level standby, CS > VIH) and ISB1 = 2 mA maximum (CMOS-level standby, CS > VHC). These values are measured at VCC = 5.5 V and f = fMAX, and appear in Table 8 (page 3) of the datasheet. The lower ISB1 current enables deeper power savings when host logic can drive CS above VHC (≈4.8 V at VCC = 5.0 V).
Is IDT6116SA45SO8 still recommended for new designs?
Yes, IDT6116SA45SO8 is actively supported for new designs. The "Not recommended for new designs" notice was removed from the datasheet on February 1, 2001 (Document History, page 11), and the part remains listed in current IDT/Renesas product catalogs for industrial and military applications. Its proven reliability, broad temperature qualification, and long-term availability make it suitable for long-lifecycle embedded systems.
IDT6116SA45SO8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116SA45SO8 FAQ
1.How can I place an order for IDT6116SA45SO8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116SA45SO8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116SA45SO8 reliable?
The price and inventory of IDT6116SA45SO8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116SA45SO8 is usually 5 days.
3.What payment methods are accepted for IDT6116SA45SO8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116SA45SO8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116SA45SO8?
IDT6116SA45SO8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116SA45SO8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116SA45SO8?
For technical support, including IDT6116SA45SO8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116SA45SO8 requirements.
6.How does Aetrix verify that IDT6116SA45SO8 is sourced from the original manufacturer or authorized distributors?
All IDT6116SA45SO8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116SA45SO8 meets industry standards.
7.What is the process for return or replacement of IDT6116SA45SO8?
All IDT6116SA45SO8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116SA45SO8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116SA45SO8 part is unused and in its original packaging.
Return procedure for IDT6116SA45SO8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116SA45SO8 Tags
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