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Renesas IDT6116SA45SOI
- Part No.:
- IDT6116SA45SOI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
IDT6116SA45SOI.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,876
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Product details
Overview
IDT6116SA45SOI from Integrated Device Technology is a 16K-bit (2K × 8) high-speed CMOS static RAM with 45 ns maximum access time, TTL-compatible I/O, and industrial temperature range (–45°C to +85°C). It operates at 5.0 V ±10%, supports asynchronous read/write cycles without clocks or refresh, and features dual standby modes - TTL-level (25 mA) and CMOS-level (2 mA) - for system power optimization in embedded controllers and data acquisition systems.
For engineers reviewing the IDT6116SA45SOI datasheet, IDT6116SA45SOI pinout, IDT6116SA45SOI application, or IDT6116SA45SOI equivalent, key selection criteria include guaranteed 45 ns read cycle time (tRC), 24-pin SOIC package compatibility, industrial-grade reliability per MIL-STD-883 Class B, and direct TTL interface support without level-shifting.
Technical Context
The IDT6116SA45SOI implements fully static asynchronous circuitry with no clock or refresh requirement. Its address decoder drives a 128 × 128 memory array, and control logic supports three operational modes: standby (CS HIGH), read (CS & OE LOW, WE HIGH), and write (CS & WE LOW).
It uses advanced CMOS process technology to eliminate alpha-particle soft errors and provides two distinct standby current states: ISB = 25 mA (TTL-level CS) and ISB1 = 2 mA (CMOS-level CS), enabling flexible low-power design across varying bus voltage thresholds.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384 bits (2K × 8 organization) |
| Access Time (tAA) | 45 ns max - defines minimum address-to-data valid delay in read cycles |
| Read Cycle Time (tRC) | 45 ns max - sets shortest interval between successive read operations |
| Supply Voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails |
| Operating Temperature | –45°C to +85°C - qualified for industrial environments without derating |
| Standby Current (ISB1) | 2 mA max at CMOS-level CS - enables ultra-low-power retention during idle periods |
| I/O Compatibility | TTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive (VOH ≥ 2.4 V, VOL ≤ 0.4 V) |
Pinout & Package
Package: 24-pin SOIC (SO24-2), gull-wing lead form, 300 mil body width, RoHS-compliant lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel interface supporting simultaneous read or write transfers |
| CS | Chip Select | Active-low enable controlling device activation and standby entry (ISB/ISB1 transition) |
| WE | Write Enable | Active-low signal qualifying write cycles when CS is asserted |
| OE | Output Enable | Active-low control for output buffer enable during read operations |
| VCC | Power Supply | +5 V supply pin; decoupling required within 1 cm for stable AC operation |
| GND | Ground Reference | Signal and power ground return path; must be low-impedance connection |
Key Features
| Feature | Design Value |
|---|---|
| Static Operation | No clocks or refresh required - simplifies timing design and eliminates dynamic power overhead |
| Dual Standby Modes | TTL-level (25 mA) and CMOS-level (2 mA) standby currents allow optimized power gating based on system bus voltage |
| TTL-Compatible I/O | Direct interface with 74LS/74HC logic families without level shifters or external drivers |
| MIL-STD-883 Class B Compliance | Validated for industrial applications requiring high-reliability screening and burn-in testing |
| Alpha-Particle Immunity | CMOS fabrication eliminates soft-error susceptibility - critical for long-term data integrity in unshielded environments |
Applications
| Industrial PLC Memory Buffer | Medical Instrument Data Log |
|---|---|
Use Scenario: Stores real-time sensor readings and control state variables in programmable logic controllers operating continuously in factory environments. IC Role / Device Role / Timing Role: Non-volatile data buffer holding intermediate values between scan cycles; accessed asynchronously during CPU polling intervals. Use Value: 45 ns tRC enables sub-100 ns memory access latency, supporting fast scan rates up to 10 kHz without pipeline stalls. | Use Scenario: Captures time-stamped physiological waveforms (ECG, EEG) in portable diagnostic devices with battery backup constraints. IC Role / Device Role / Timing Role: Primary working memory for waveform preprocessing firmware; retains data during brief power interruptions via external 2 V hold-up supply. Use Value: ISB1 = 2 mA standby current extends battery life beyond 72 hours during idle monitoring mode. |
| Avionics Sensor Interface Module | Test Equipment Pattern Generator |
Use Scenario: Interfaces with analog-to-digital converters in airborne environmental monitoring units exposed to wide thermal excursions. IC Role / Device Role / Timing Role: High-reliability scratchpad memory storing calibration coefficients and transient fault logs across –45°C to +85°C ambient. Use Value: MIL-STD-883 Class B qualification ensures operation under vibration, thermal shock, and radiation conditions typical of avionics bays. | Use Scenario: Holds stimulus patterns for automated circuit board functional testers requiring deterministic, glitch-free vector delivery. IC Role / Device Role / Timing Role: Synchronous pattern store synchronized to tester clock; accessed at fixed 45 ns intervals for repeatable timing margins. Use Value: Guaranteed tAA ≤ 45 ns and tOH ≥ 5 ns provide 10 ns setup/hold margin for 20 MHz pattern clocks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 32K × 8 organization, 45 ns access, 3.3 V supply only | Requires level translation for 5 V systems; higher density but incompatible voltage domain | Select only if migrating to 3.3 V architecture and needing >16K capacity |
| AS6C1008-45ZIN | 128K × 8, 45 ns, 5 V, but no CMOS-level standby (ISB1 not supported) | Lacks ultra-low-power retention mode - unsuitable for battery-backed applications | Prefer for cost-sensitive, non-battery systems where density outweighs power sensitivity |
Compared with IDT6116SA45SOI, CY62167EV30LL-45ZSXI offers double density but mandates 3.3 V operation, while AS6C1008-45ZIN provides greater capacity without the 2 mA CMOS-level standby essential for extended battery retention - making IDT6116SA45SOI uniquely suited for industrial systems requiring both 5 V compatibility and ultra-low-power idle states.
Availability
IDT6116SA45SOI is available at Aetrix Electronics and suitable for industrial automation, medical instrumentation, avionics subsystems, and test equipment requiring stable component supply across extended lifecycle commitments.
Supply support for IDT6116SA45SOI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.
IDT6116SA45SOI belongs to IDT's legacy CMOS SRAM product line, engineered for reliability-critical applications demanding zero-refresh operation, TTL compatibility, and military-grade screening in industrial and aerospace environments.
FAQ
What is the maximum operating temperature range for IDT6116SA45SOI?
IDT6116SA45SOI is rated for industrial temperature operation from –45°C to +85°C. This range is explicitly specified in the ordering information and DC operating conditions tables, and it applies to the SOIC package variant (SO24-2) with SA (standard power) and 45 ns speed grade. The device does not support commercial (0°C to +70°C) or military (–55°C to +125°C) grades in this specific SOI configuration.
Does IDT6116SA45SOI require external refresh circuitry?
No, IDT6116SA45SOI does not require external refresh circuitry. It is a fully static RAM using asynchronous CMOS design, meaning data retention is maintained indefinitely as long as power is applied and CS remains active. The absence of refresh requirements simplifies system timing and reduces controller overhead compared to DRAM solutions.
What is the difference between ISB and ISB1 standby current in IDT6116SA45SOI?
IDT6116SA45SOI specifies two standby current modes: ISB (25 mA max) activates when CS exceeds VIH (TTL threshold), while ISB1 (2 mA max) engages only when CS exceeds VHC (CMOS threshold, ~VCC – 0.2 V). ISB1 enables significantly lower power consumption but requires tighter bus voltage control - a key trade-off for battery-backed or thermally constrained designs.
Can IDT6116SA45SOI be used with 3.3 V logic interfaces?
IDT6116SA45SOI is designed for 5.0 V ±10% operation and features TTL-compatible inputs (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and outputs (VOH ≥ 2.4 V, VOL ≤ 0.4 V). While its inputs accept 3.3 V logic HIGH signals, its outputs drive 5 V levels and are not 3.3 V tolerant. Direct connection to 3.3 V-only systems requires level-shifting circuitry to prevent damage or signal contention.
Is IDT6116SA45SOI pin-compatible with other 24-pin SRAMs like the HM6116 or 6264?
IDT6116SA45SOI follows the industry-standard 24-pin SRAM pinout (A0–A10, I/O0–I/O7, CS, WE, OE, VCC, GND), matching HM6116 and 6264 in signal assignment and physical layout. However, timing parameters (e.g., tRC = 45 ns vs. 200 ns for HM6116) and electrical specs (e.g., ISB1 support) differ - functional substitution requires verification of access time, power, and control timing margins in the target system.
IDT6116SA45SOI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
IDT6116SA45SOI FAQ
1.How can I place an order for IDT6116SA45SOI through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT6116SA45SOI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT6116SA45SOI reliable?
The price and inventory of IDT6116SA45SOI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT6116SA45SOI is usually 5 days.
3.What payment methods are accepted for IDT6116SA45SOI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT6116SA45SOI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT6116SA45SOI?
IDT6116SA45SOI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT6116SA45SOI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT6116SA45SOI?
For technical support, including IDT6116SA45SOI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT6116SA45SOI requirements.
6.How does Aetrix verify that IDT6116SA45SOI is sourced from the original manufacturer or authorized distributors?
All IDT6116SA45SOI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT6116SA45SOI meets industry standards.
7.What is the process for return or replacement of IDT6116SA45SOI?
All IDT6116SA45SOI units undergo pre-shipment inspection (PSI). If there is an issue with IDT6116SA45SOI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT6116SA45SOI part is unused and in its original packaging.
Return procedure for IDT6116SA45SOI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT6116SA45SOI Tags
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AT24C02C-XHM-T
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