Renesas IDT70825L20G

Overview

IDT70825L20G from Integrated Device Technology is a high-speed 8K × 16-bit Sequential Access Random Access Memory (SARAM™) with dual-port architecture: asynchronous random-access port and synchronous sequential-access port. It delivers 20 ns tAA random-access access time, 20 ns tCD sequential-access cycle delay, and 1 mW standby power consumption. Used in real-time data buffering applications such as PCI bridge interfaces and packet FIFOs where concurrent read/write and streaming access are required.

For engineers reviewing the IDT70825L20G datasheet, IDT70825L20G pinout, IDT70825L20G application, or IDT70825L20G equivalent, key selection criteria include dual-port timing isolation, buffer chaining mode support, EOB flag-controlled flow control, battery-backed 2V data retention, and TTL-compatible 5V operation with industrial temperature range support.

Technical Context

The IDT70825L20G implements a Dual-Port RAM cell architecture with physically separate address/data/control paths for its asynchronous random-access port (A0–A12, I/O0–I/O15, CE/OE/R/W/LB/UB) and synchronous sequential-access port (SCLK, SCE, SR/W, SLD, SSTRT1/SSTRT2, SI/O0–SI/O15). Each port operates independently-enabling simultaneous streaming writes via sequential port while servicing random reads via the other port.

Its internal pointer logic supports two configurable buffers with start/end address registers and four flow modes (BUFFER CHAINING, STOP, LINEAR, MASK), controlled via CMD register access using A0–A2 and R/W on the random port. EOB1/EOB2 flags signal buffer boundary crossings and are cleared by RST or CMD write to bit 0/1 of flag status register.

Key Specifications

Pinout & Package

Package: 80-pin Thin Quad Flatpack (TQFP), PN80-1, 14 mm × 14 mm × 1.4 mm body size, lead-free and RoHS-compliant per datasheet revision DSC-3016/10.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SARAM applications.

Compared with CY7C028V-20AC and IS61LV51216-20TQLI, the IDT70825L20G uniquely integrates synchronous sequential access with hardware buffer management, eliminating external control logic and reducing BOM count in streaming-buffer designs.

Availability

IDT70825L20G is available at Aetrix Electronics and suitable for PCI bridge buffering, real-time packet FIFOs, motor control data logging, and DSP co-processor interfaces requiring stable component supply across industrial temperature ranges and long production lifecycles.

Supply support for IDT70825L20G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a fabless semiconductor company specializing in timing, memory, and interface solutions before its acquisition by Renesas in 2019. Known for high-performance, low-power memory and clock devices.

The IDT70825L20G belongs to IDT's SARAM™ product line, designed specifically for applications demanding concurrent streaming and random access - such as communications infrastructure, industrial automation, and embedded real-time systems.

FAQ

What is the function of the CMD pin on the IDT70825L20G?

The CMD pin on the IDT70825L20G enables access to internal control and status registers via the random-access port. When CMD = LOW and CE = HIGH, address lines A0–A2 and data I/O0–I/O12 are used to read/write buffer start/end addresses, flow control mode, and EOB flag status. This mode must not be used concurrently with sequential port activity.

Does the IDT70825L20G support true simultaneous read/write across both ports?

Yes, the IDT70825L20G supports true concurrent operation: the random-access port can perform a read while the sequential port executes a write, or vice versa, with no internal arbitration delay. Its Dual-Port RAM cell architecture ensures electrical isolation between ports, enabling deterministic timing for real-time buffering.

How does the EOB1/EOB2 flag behavior differ between BUFFER CHAINING and STOP modes on the IDT70825L20G?

In BUFFER CHAINING mode, EOB1 asserts when the pointer reaches Buffer #1's end address and immediately loads Buffer #2's start address. In STOP mode, EOB1 asserts and the pointer halts at EOB+1 (if CNTEN is LOW on next SCLK), blocking further sequential writes until released via RST, SLD, or bit 4 of the flow control register.

Can the IDT70825L20G operate with only one port enabled while retaining data in the memory array?

Yes - the IDT70825L20G retains full data integrity when only one port is active. If CE = HIGH (random port disabled) and SCE = LOW (sequential port active), all stored data remains accessible and uncorrupted. Similarly, with SCE = HIGH and CE = LOW, random access continues without affecting sequential port state or stored values.

What is the significance of the "L" suffix in IDT70825L20G?

The "L" in IDT70825L20G denotes the low-power variant: it draws only 1 mW typical standby current (vs. 5 mW for the "S" version) while maintaining identical 20 ns speed grade, pinout, and functionality. This makes IDT70825L20G optimal for battery-backed or thermally constrained industrial applications.