Renesas IDT70V7339S133DD

Overview

IDT70V7339S133DD from Integrated Device Technology is a high-speed 512K × 18 (9 Mbit) synchronous bank-switchable dual-ported SRAM with independent left/right ports, 133 MHz operation (4.2 ns max access), selectable 2.5 V/3.3 V I/O interface per port, and industrial temperature support (–40°C to +85°C). It enables concurrent memory access in real-time networking and packet buffering systems where deterministic latency and port isolation are critical.

For engineers reviewing the IDT70V7339S133DD datasheet, IDT70V7339S133DD pinout, IDT70V7339S133DD application, or IDT70V7339S133DD equivalent, key selection criteria include bank-switchable arbitration control, pipelined vs. flow-through output mode timing, dual chip-enable depth expansion capability, JTAG IEEE 1149.1 compliance, and VDDQ voltage selectability per port.

Technical Context

The IDT70V7339S133DD implements a true SRAM core-not a traditional dual-port architecture-partitioned into 64 independent 8K × 18 banks, each accessible via dedicated BA0–BA5 address lines per port. Bank conflict detection is user-managed: simultaneous left/right access to the same bank invalidates both operations.

It supports two synchronous output modes: pipelined (3.4–4.2 ns clock-to-data, 5–7.5 ns cycle time) and flow-through (10–15 ns clock-to-data, 15–25 ns cycle time), selected independently per port via PL/FTL and PL/FTR pins. All inputs-including address, control, and data-are registered for tight setup/hold margins (1.5 ns setup, 0.5 ns hold @ 200 MHz).

Key Specifications

Pinout & Package

Available in 256-pin BGA (BC256 package), 17 mm × 17 mm body, 1.0 mm ball pitch. Pin functions defined per port (left/right) with fully duplicated control, address, and I/O terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133AXC and R1EX25618AS-133B1#U0, the IDT70V7339S133DD uniquely combines bank-switchable arbitration, per-port voltage select, and counter repeat functionality - enabling higher-level protocol acceleration and mixed-voltage integration not possible with either alternative.

Availability

IDT70V7339S133DD is available at Aetrix Electronics and suitable for industrial motion control, avionics display systems, and telecom packet buffering requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IDT70V7339S133DD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF power solutions for communications, computing, and industrial markets.

The IDT70V7339S product line delivers bank-switchable dual-port SRAMs optimized for deterministic, low-latency memory sharing in real-time systems where port arbitration and voltage flexibility are essential design constraints.

FAQ

What is the maximum guaranteed access speed of the IDT70V7339S133DD?

The IDT70V7339S133DD is rated for 133 MHz operation with a maximum access time of 4.2 ns under industrial temperature conditions (–40°C to +85°C). This specification applies to both commercial and industrial versions, and is validated with VDDQ = 3.3 V (OPT pin set to VIH) per port. The device also supports 166 MHz operation in commercial grade only.

Does the IDT70V7339S133DD support mixed I/O voltages between its two ports?

Yes - the IDT70V7339S133DD supports independent I/O voltage selection per port. OPTL configures the left port for either 2.5 V or 3.3 V operation, while OPTR does the same for the right port. Corresponding VDDQL and VDDQR supplies must match the selected voltage level. This allows one port to interface with a 2.5 V FPGA and the other with a 3.3 V microcontroller without external level shifters.

How does bank conflict resolution work in the IDT70V7339S133DD?

The IDT70V7339S133DD does not resolve bank conflicts automatically. If both ports assert identical BA0–BA5 values simultaneously, neither access is valid - writes may corrupt data and reads return undefined values. System firmware must ensure BA0L–BA5L ≠ BA0R–BA5R before initiating concurrent accesses. The functional description on page 18 of the datasheet explicitly warns against this condition.

Can the IDT70V7339S133DD be used in depth-expanded configurations?

Yes - the IDT70V7339S133DD supports depth expansion using its dual chip enable (CE0X/CE1X) architecture. By tying CE0A = CE0B = L and CE1A = CE1B = H, two devices operate in parallel with shared address/control lines and independent data buses. No additional logic is required, and timing remains synchronized across devices when clocks are aligned.

Is JTAG boundary-scan supported on the IDT70V7339S133DD?

Yes - the IDT70V7339S133DD implements full IEEE 1149.1 JTAG compliance with dedicated TDI, TDO, TCK, TMS, and TRST pins. This enables boundary-scan testing, in-system programming verification, and debug visibility in high-density PCB assemblies. JTAG functionality is active regardless of memory operation mode or voltage configuration.