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Renesas IDT71016S12Y

Part No.:
IDT71016S12Y
Manufacturer:
Renesas
Category:
Memory
Package:
44-BSOJ (0.400", 10.16mm Width)
Datasheet:
AetrixIDT71016S12Y.pdf
Description:
IC SRAM 1MBIT PARALLEL 44SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,022

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Product details

Overview

IDT71016S12Y from Integrated Device Technology is a 64K × 16-bit (1 Mbit) high-speed CMOS static RAM with 12 ns access time, TTL-compatible I/O, single 5 V supply operation, and dual byte enable (BHE/BLE) for flexible 8-bit or 16-bit data bus interfacing - used in legacy industrial controllers and embedded memory subsystems requiring deterministic asynchronous timing.

For engineers reviewing the IDT71016S12Y datasheet, IDT71016S12Y pinout, IDT71016S12Y application, or IDT71016S12Y equivalent, key selection criteria include verified 12 ns commercial-grade timing at 5 V, SOJ-44 package compatibility, byte-selectable write capability, and support for no-refresh static operation in real-time control buffers and FPGA configuration storage.

Technical Context

The IDT71016S12Y implements fully static asynchronous architecture with no clocks or refresh required. Its address decoding, sense amplifiers, and bidirectional I/O drivers are all CMOS-based and operate across 0°C to +70°C (Commercial grade), with TTL-level input thresholds and output drive strength compliant to ±4 mA VOH/8 mA VOL.

It supports three independent write control modes: chip-select–driven, write-enable–driven, and byte-enable–driven - each with defined setup/hold and pulse-width constraints (e.g., tWP ≥ 9 ns). Output enable propagation delay is guaranteed ≤7 ns, enabling tight timing closure in microprocessor co-processor interfaces.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 64K × 16-bit (1,048,576-bit total); enables direct 16-bit data path without external multiplexing
Access Time (tAA) 12 ns max at VCC = 4.5–5.5 V; meets cycle timing for 80386/80486 CPU burst modes
Supply Voltage 5.0 V ±10%; compatible with legacy 5 V logic families without level translation
I/O Interface TTL-compatible inputs and outputs; eliminates need for bus interface translators in mixed-voltage systems
Byte Enable Control Separate BHE and BLE pins allow independent 8-bit writes to upper/lower bytes - critical for x86-style data alignment
Standby Current (ISB1) 10 µA max at CMOS-level chip deselect (VCC = 5.5 V, VIN < VLC or > VHC); enables low-power sleep states
Operating Temperature 0°C to +70°C (Commercial grade); validated for use in office automation and test equipment environments

Pinout & Package

Packaged in JEDEC-standard 44-pin Plastic SOJ (SO44-1), 400-mil body width, with gull-wing leads and pin 1 index notch. Pin 1 is A0; pins 23 and 32 are VCC; pins 11 and 24 are VSS; pin 3 is A12; pin 44 is A5.

Pin/Terminal Circuit Role Design Meaning
A0–A15 Address Inputs 16-bit address bus interface; fully decoded internally to select one of 65,536 memory words
CS Chip Select Active-low global enable; places device in standby (high-Z I/O) when deasserted
WE Write Enable Active-low write strobe; controls data latching into memory array during CS/BHE/BLE assertion
OE Output Enable Active-low output gate; enables read data on I/O pins independently of CS state
BHE / BLE Byte Enable Independent high/low byte write control; allows partial-word writes without read-modify-write cycles
I/O0–I/O15 Bidirectional Data 16-bit TTL-compatible data bus; direction controlled by WE and CS timing, not external direction signals
VCC / VSS Power / Ground Single 5 V supply; decoupling required per JEDEC SOJ layout guidelines to maintain 12 ns timing integrity

Key Features

Feature Design Value
Asynchronous Static Operation No clock, no refresh, no wait states - simplifies timing design in microcontroller and DSP memory interfaces
12 ns Access with 7 ns OE Delay Enables sub-83 MHz read throughput in tightly coupled bus architectures (e.g., Motorola 68000 derivatives)
Dual Byte Write Enable Eliminates need for external byte masking logic in 8-bit peripheral interfacing or legacy ISA bus designs
TTL-Compatible I/O Direct connection to 74LS/74ALS logic families without level shifters or series resistors
Low Standby Power (10 µA) Supports battery-backed operation in instrumentation where memory retention must persist during main power loss

Applications

Industrial PLC Memory Buffer FPGA Configuration Storage

Use Scenario: Storing real-time I/O scan data and ladder logic state variables in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: Asynchronous SRAM buffer between CPU and field I/O modules; provides zero-wait-state access for 12 ns-critical scan timing.

Use Value: Eliminates refresh overhead and guarantees consistent 12 ns read/write latency across temperature, ensuring predictable PLC scan jitter under thermal stress.

Use Scenario: Holding configuration bitstreams for Xilinx XC4000-series FPGAs during power-up and reconfiguration sequences.

IC Role / Device Role / Timing Role: Nonvolatile-configurable memory mapped to FPGA's parallel slave mode interface; accessed via 16-bit synchronous read bursts.

Use Value: TTL-compatible outputs drive FPGA DATA[15:0] directly; byte enables support partial reconfiguration of CLB blocks without full bitstream reload.

Legacy x86 Co-Processor Cache Test Equipment Pattern Memory

Use Scenario: Serving as L1 cache extension for Intel 80387 math coprocessors in CAD workstations and engineering terminals.

IC Role / Device Role / Timing Role: High-speed scratchpad memory mapped into coprocessor's local address space; accessed via dedicated 16-bit bus.

Use Value: 12 ns tAA and tRC match 80386DX-25 bus timing; BHE/BLE align with x86 byte lane addressing for efficient operand fetches.

Use Scenario: Storing digital stimulus/response patterns in automated test equipment (ATE) for semiconductor wafer probing.

IC Role / Device Role / Timing Role: Deterministic pattern store accessed by high-speed pattern generator ASIC; requires guaranteed 12 ns access across 0–70°C.

Use Value: No refresh circuitry avoids pattern corruption during long test sequences; SOJ-44 package supports dense PCB layouts in modular ATE backplanes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
Cypress CY7C1016D-12ZXC Same 64K × 16 organization, 12 ns speed, but TSOP-44 only (no SOJ); higher ICC (220 mA vs. 210 mA) Requires PCB redesign for TSOP footprint; suitable where board space is constrained but SOJ socketing is not required Select if TSOP-44 is preferred for automated assembly and thermal profile permits slightly higher dynamic current
ISSI IS61LV1024-12ML 12 ns speed, 5 V operation, SOJ-44 package, but only 100% tested at 0°C to +70°C - no industrial grade variant Limited to commercial-temperature applications; lacks BHE/BLE - uses single UB/LB pins instead Choose only for cost-sensitive commercial systems where byte-select write granularity is not required

Compared with CY7C1016D-12ZXC and IS61LV1024-12ML, the IDT71016S12Y uniquely retains SOJ-44 compatibility, true dual-byte enable logic, and documented 12 ns timing across its full commercial spec - making it the only option for drop-in replacement in legacy 400-mil SOJ sockets with x86-aligned byte control.

Availability

IDT71016S12Y is available at Aetrix Electronics and suitable for industrial PLC memory buffers, FPGA configuration storage, and legacy x86 co-processor cache applications requiring stable component supply and long-lifecycle support.

Supply support for IDT71016S12Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a U.S.-based fabless semiconductor company specializing in timing, memory, and interface ICs before its acquisition by Renesas in 2019. It pioneered high-speed SRAM architectures for embedded computing.

The IDT71016S12Y belongs to IDT's flagship 71000-series high-speed CMOS SRAM family, designed specifically for deterministic, no-refresh memory interfacing in microprocessor, controller, and FPGA-based systems operating at 5 V.

FAQ

What is the maximum operating frequency supported by the IDT71016S12Y?

The IDT71016S12Y does not operate on a clock signal - it is an asynchronous static RAM. Its performance is specified by timing parameters, not frequency. With a 12 ns read cycle time (tRC), it supports up to approximately 83 MHz effective throughput in continuous sequential reads, assuming ideal bus turnaround and no wait states. The IDT71016S12Y achieves this using fully static CMOS circuitry without clocks or refresh cycles.

Does the IDT71016S12Y require external refresh circuitry?

No, the IDT71016S12Y is a true static RAM and requires no refresh circuitry. Its memory cells retain data as long as power is applied, eliminating the need for periodic refresh cycles that complicate system timing. This makes the IDT71016S12Y ideal for real-time control applications where deterministic latency is mandatory, such as industrial PLC scan buffers and test equipment pattern stores.

Can the IDT71016S12Y be used with a 3.3 V microcontroller interface?

No - the IDT71016S12Y is strictly a 5 V device with TTL-compatible I/O thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and requires VCC = 4.5–5.5 V. Direct connection to 3.3 V logic risks violating input voltage limits and may cause unreliable operation. If interfacing with 3.3 V systems, level-shifting circuitry or a 3.3 V–compatible SRAM like the IDT71V1024 is required instead of the IDT71016S12Y.

What is the function of the BHE and BLE pins on the IDT71016S12Y?

BHE (High Byte Enable) and BLE (Low Byte Enable) are independent active-low write control inputs that allow selective writing to the upper (I/O8–I/O15) or lower (I/O0–I/O7) byte of the 16-bit data bus. When only BHE is asserted, only the high byte is written; when only BLE is asserted, only the low byte is written. This enables efficient 8-bit peripheral interfacing without read-modify-write cycles - a key feature of the IDT71016S12Y in x86 and ISA bus designs.

Is the IDT71016S12Y still recommended for new designs?

No - the IDT71016S12Y was officially marked "Not recommended for new designs" in August 2000 (per datasheet revision history), and that notice was removed in February 2001. While still available through legacy channels like Aetrix Electronics, it is considered obsolete for new product development. Engineers designing new systems should evaluate modern low-voltage, higher-density alternatives - though the IDT71016S12Y remains viable for repair, replacement, and long-term maintenance of existing equipment.

IDT71016S12Y Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
44-BSOJ (0.400", 10.16mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-SOJ

IDT71016S12Y FAQ

1.How can I place an order for IDT71016S12Y through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71016S12Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71016S12Y reliable?

The price and inventory of IDT71016S12Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71016S12Y is usually 5 days.

3.What payment methods are accepted for IDT71016S12Y?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71016S12Y transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71016S12Y?

IDT71016S12Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71016S12Y order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71016S12Y?

For technical support, including IDT71016S12Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71016S12Y requirements.

6.How does Aetrix verify that IDT71016S12Y is sourced from the original manufacturer or authorized distributors?

All IDT71016S12Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71016S12Y meets industry standards.

7.What is the process for return or replacement of IDT71016S12Y?

All IDT71016S12Y units undergo pre-shipment inspection (PSI). If there is an issue with IDT71016S12Y, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71016S12Y part is unused and in its original packaging.

Return procedure for IDT71016S12Y:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT71016S12Y Tags

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