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Renesas IDT71016S12YI

Part No.:
IDT71016S12YI
Manufacturer:
Renesas
Category:
Memory
Package:
44-BSOJ (0.400", 10.16mm Width)
Datasheet:
AetrixIDT71016S12YI.pdf
Description:
IC SRAM 1MBIT PARALLEL 44SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,801

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Product details

Overview

IDT71016S12YI from Integrated Device Technology is a 64K × 16-bit (1 Mbit) high-speed CMOS static RAM with 12 ns access time, TTL-compatible I/O, single 5 V supply operation, and industrial temperature range (–40°C to +85°C). It supports byte-wide or word-wide read/write via independent BHE/BLE controls and is used in real-time embedded controllers requiring deterministic memory access without refresh.

For engineers reviewing the IDT71016S12YI datasheet, IDT71016S12YI pinout, IDT71016S12YI application, or IDT71016S12YI equivalent, key selection criteria include access time consistency across CS/OE/WE control paths, low-Z output enable timing (7 ns), industrial-grade standby current (60 mA at fMAX), and SOJ-44 package compatibility with legacy board layouts.

Technical Context

The IDT71016S12YI implements fully static asynchronous architecture with no clocks or refresh required. Its dual-byte enable (BHE/BLE) and separate OE/CS/WE inputs allow flexible bus interface modes - including word, high-byte, low-byte, and output-disabled states - all validated under industrial voltage (4.5–5.5 V) and temperature conditions.

Timing is characterized using JEDEC-standard AC test loads (255 Ω / 30 pF for tOE, tCLZ, etc.), with guaranteed tAA = 12 ns, tRC = 12 ns, and tOE = 7 ns at VCC = 5.0 V ±10%. All I/Os meet TTL voltage thresholds (VIL ≤ 0.8 V, VIH ≥ 2.2 V) and drive ±8 mA outputs.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 64K × 16-bit (1,048,576 bits); enables 16-bit data bus interfacing without external multiplexing
Access Time (tAA) 12 ns max; ensures deterministic read latency in hard real-time systems like motion controllers
Supply Voltage 4.5 V to 5.5 V; compatible with standard 5 V logic rails and tolerant of ±10% regulation variation
Operating Temperature –40°C to +85°C; qualified for industrial environments including factory automation and telecom line cards
Standby Current (ISB) 60 mA max at fMAX; enables low-power hold mode during CPU idle cycles without data loss
Output Enable Delay (tOE) 7 ns max; supports fast peripheral response in burst-mode memory-mapped I/O applications
Byte Enable Control Independent BHE/BLE pins; allows selective 8-bit writes to upper/lower bytes without disturbing adjacent data

Pinout & Package

Package: 44-pin Plastic SOJ (SO44-1), JEDEC standard, 400-mil width, lead pitch 0.05 inch. Pin 1 marked by notch or dot; top-view orientation per datasheet drawing SO44-1.

Pin/Terminal Circuit Role Design Meaning
A0–A15 Address Inputs 16-bit address bus; selects one of 64K locations; fully static-no setup/hold timing required
CS Chip Select Active-low global enable; device enters standby (high-Z I/O) when high; tACS = 12 ns max
OE Output Enable Active-low output gate; enables bidirectional I/O drivers independently of CS/WE; tOE = 7 ns
WE Write Enable Active-low write strobe; initiates write cycle when CS and BHE/BLE are active; tWP = 9 ns min
BHE / BLE Byte Enable Active-low controls for high/low byte; enables 8-bit partial writes; eliminates need for external byte masking logic
I/O0–I/O7 / I/O8–I/O15 Bidirectional Data TTL-compatible 16-bit data bus; drives ±8 mA; high-impedance when CS/OE/BHE/BLE inactive
VCC / VSS Power / Ground Single 5 V supply; decoupling required per JEDEC SOJ layout guidelines to maintain tAA spec

Key Features

Feature Design Value
Equal Access & Cycle Times tAA = tRC = 12 ns ensures identical timing for consecutive reads/writes-critical for pipeline-synchronized firmware
Low-Power Standby Mode ISB = 60 mA at fMAX reduces system power during CPU sleep without sacrificing data retention
Byte-Write Capability Independent BHE/BLE pins eliminate need for external byte-select logic or glue logic in 8-bit peripheral interfaces
TTL-Compatible I/O Direct connection to 5 V microcontrollers (e.g., Intel 80C188, Motorola 68EC000) without level-shifting components
Industrial Temperature Range Validated operation from –40°C to +85°C supports deployment in uncontrolled enclosures and outdoor base stations

Applications

Industrial PLC Memory Buffer DSP Data Scratchpad

Use Scenario: Storing real-time I/O status and control registers in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: Non-refreshing SRAM buffer between FPGA I/O engine and ARM Cortex-M4 controller; provides sub-12 ns read latency for cycle-critical ladder logic execution.

Use Value: Eliminates DRAM refresh overhead and guarantees worst-case 12 ns access-enabling 83 MHz scan rates in safety-rated motion control loops.

Use Scenario: Holding intermediate FFT coefficients and filter taps in fixed-point digital signal processors for audio preprocessing.

IC Role / Device Role / Timing Role: Dual-port-capable (via OE/WE sequencing) scratchpad memory mapped into DSP's internal bus; supports concurrent instruction fetch and data load/store.

Use Value: 7 ns tOE enables back-to-back coefficient reads during pipeline stalls, sustaining 100% MAC utilization in 16-bit FIR filters.

Legacy Bus Interface Adapter Telecom Line Card Frame Buffer

Use Scenario: Bridging ISA or VMEbus peripherals to modern microcontrollers in retro-computing or test equipment upgrades.

IC Role / Device Role / Timing Role: Glueless 16-bit memory interface with BHE/BLE matching x86 byte-lane signaling; CS/OE timing aligns with ISA tAVDV and tDLZH windows.

Use Value: Enables drop-in replacement of obsolete 2K×8 SRAMs using same PCB footprint and timing margins-no timing margin revalidation needed.

Use Scenario: Buffering T1/E1 frame payloads in channelized telecom line cards operating in temperature-varying central office environments.

IC Role / Device Role / Timing Role: Industrial-grade frame store synchronized to DSX-1 framing clock; retains valid data during brief power dips due to static architecture.

Use Value: 60 mA ISB at –40°C ensures <1 µW/bit leakage-preventing frame corruption during brownout recovery in NEBS-compliant chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-12ZSXIT 1 Mbit (64K×16), 12 ns, 3.3 V core (5 V tolerant I/O), TSOP-44; lower dynamic current (120 mA vs. 210 mA) Requires level translation for pure 5 V systems; better suited for mixed-voltage designs with 3.3 V CPUs Select when migrating to lower-power 3.3 V domains; not pin-compatible due to VCC/VDDQ separation and different DC specs
AS6C1008-12ZIN 1 Mbit (128K×8), 12 ns, 5 V, SOJ-32; narrower 8-bit bus, smaller package Lacks byte-enable capability; requires two devices for 16-bit width; incompatible pinout and address depth Use only if redesigning for 8-bit data path; not a functional substitute for IDT71016S12YI's 16-bit + BHE/BLE architecture

Compared with CY62167EV30LL-12ZSXIT and AS6C1008-12ZIN, the IDT71016S12YI uniquely delivers 16-bit bus width, industrial-grade 5 V operation, and hardware byte enable in a legacy SOJ-44 package-making it irreplaceable in fielded 5 V systems where PCB layout and timing margins are fixed.

Availability

IDT71016S12YI is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, legacy bus adapters, and DSP-based instrumentation requiring stable component supply across extended lifecycle programs.

Supply support for IDT71016S12YI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in high-performance timing, memory, and interface ICs before its acquisition by Renesas in 2019. Known for reliability in industrial and telecom markets.

IDT71016S12YI belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory interfacing in 5 V embedded control systems where refresh-free operation and industrial temperature resilience are mandatory.

FAQ

What is the maximum operating frequency supported by the IDT71016S12YI?

The IDT71016S12YI does not use a clock and therefore has no operating frequency specification. Its performance is defined by timing parameters: tRC = 12 ns minimum cycle time implies a theoretical maximum bus transaction rate of 83.3 MHz, but actual throughput depends on system-level address/data setup/hold and control signal propagation delays. The device remains fully static-no minimum or maximum clock is required.

Does the IDT71016S12YI require external refresh circuitry?

No, the IDT71016S12YI is a fully static RAM and requires no refresh circuitry. Its CMOS latch-based memory cells retain data indefinitely as long as VCC is applied within specification (4.5–5.5 V) and ambient temperature stays within –40°C to +85°C. This eliminates refresh overhead in microcontroller or FPGA-based systems, simplifying design and guaranteeing zero-latency access.

Can the IDT71016S12YI be used with a 3.3 V microcontroller?

The IDT71016S12YI is specified for 5 V operation only (VCC = 4.5–5.5 V) and has TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V). While its inputs may accept 3.3 V logic HIGH, its outputs swing to ~3.5 V (VOH at –4 mA), which may fall below the VIH requirement of many 3.3 V receivers. Level-shifting or buffer ICs are required for reliable interfacing with 3.3 V systems.

What is the function of the BHE and BLE pins on the IDT71016S12YI?

BHE (Bus High Enable) and BLE (Bus Low Enable) are active-low byte-select controls on the IDT71016S12YI. When BHE is low and BLE is high, only I/O8–I/O15 (high byte) are driven or latched; when BLE is low and BHE is high, only I/O0–I/O7 (low byte) are active. Both low enables full 16-bit word access. This eliminates external byte-mask logic in 8-bit peripheral interfaces or mixed-width bus architectures.

Is the IDT71016S12YI pin-compatible with other speed grades in the IDT71016 family?

Yes, all IDT71016 variants-including S12, S15, and S20-share identical 44-pin SOJ (SO44-1) and TSOP (SO44-2) packages and pinouts. The only differences are timing specifications (e.g., tAA = 12 ns for S12, 15 ns for S15). A board designed for IDT71016S12YI can accept slower grades without layout changes, though timing margins must be re-verified for the target speed grade.

IDT71016S12YI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
44-BSOJ (0.400", 10.16mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-SOJ

IDT71016S12YI FAQ

1.How can I place an order for IDT71016S12YI through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71016S12YI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71016S12YI reliable?

The price and inventory of IDT71016S12YI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71016S12YI is usually 5 days.

3.What payment methods are accepted for IDT71016S12YI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71016S12YI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71016S12YI?

IDT71016S12YI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71016S12YI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71016S12YI?

For technical support, including IDT71016S12YI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71016S12YI requirements.

6.How does Aetrix verify that IDT71016S12YI is sourced from the original manufacturer or authorized distributors?

All IDT71016S12YI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71016S12YI meets industry standards.

7.What is the process for return or replacement of IDT71016S12YI?

All IDT71016S12YI units undergo pre-shipment inspection (PSI). If there is an issue with IDT71016S12YI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71016S12YI part is unused and in its original packaging.

Return procedure for IDT71016S12YI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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