Renesas IDT71016S12YI8
- Part No.:
- IDT71016S12YI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
IDT71016S12YI8.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IDT71016S12YI8 from Integrated Device Technology is a 64K × 16-bit (1 Mbit) high-speed CMOS static RAM with 12 ns access time, 5 V single-supply operation, TTL-compatible I/O, and dual byte enable (BHE/BLE) for selective 8-bit access in embedded control and data acquisition systems.
For engineers reviewing the IDT71016S12YI8 datasheet, IDT71016S12YI8 pinout, IDT71016S12YI8 application, or IDT71016S12YI8 equivalent, key selection criteria include industrial temperature range (–40°C to +85°C), 44-pin SOJ package compatibility, byte-selectable read/write timing, and low standby current (10 mA at CMOS-level chip deselect).
Technical Context
The IDT71016S12YI8 implements fully static asynchronous architecture-no clocks or refresh required-and uses bidirectional TTL-compatible I/O buffers with independent high- and low-byte enables (BHE/BLE) to support 8-bit or 16-bit data bus configurations. Its output enable (OE) path achieves 7 ns propagation delay, enabling fast read cycles without requiring address hold after OE assertion.
Chip select (CS) and write enable (WE) are fully decoded with overlapping timing windows supporting three distinct write control modes: WE-controlled, CS-controlled, and byte-enable-controlled. All DC and AC parameters-including tAA = 12 ns, tRC = 12 ns, and ISB1 = 10 mA-are guaranteed over the full industrial temperature range (–40°C to +85°C) and 4.5 V–5.5 V supply.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576 bits); supports word-wide or byte-wide data transfers via BHE/BLE |
| Access Time (tAA) | 12 ns max; determines minimum latency between address valid and valid data on I/O pins |
| Read Cycle Time (tRC) | 12 ns max; sets minimum interval between successive read operations |
| Supply Voltage | 4.5 V–5.5 V; compatible with standard 5 V TTL logic rails and legacy system power domains |
| Standby Current (ISB1) | 10 µA typical, 10 mA max at CMOS-level chip deselect; enables ultra-low-power sleep mode |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade reliability in motor drives and telecom line cards |
| I/O Interface | TTL-compatible bidirectional data (I/O0–I/O15); no level-shifting required when interfacing with 5 V microcontrollers |
Pinout & Package
Package: 44-pin Plastic SOJ (SO44-1), JEDEC-standard footprint, 400-mil width, lead pitch 0.05 inch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; fully decoded to select one of 65,536 memory words |
| CS | Chip Select | Active-low global enable; places device in active or high-Z standby based on logic level |
| OE | Output Enable | Active-low control for output drivers; enables fast read access independent of WE state |
| WE | Write Enable | Active-low signal initiating write cycle; latches data on I/O lines when CS and byte enables are active |
| BHE / BLE | Byte Enable Inputs | Independent high- and low-byte controls; allow 8-bit writes without disturbing adjacent byte |
| I/O0–I/O7 / I/O8–I/O15 | Bidirectional Data I/O | 16-bit TTL-compatible data bus; direction controlled by CS/OE/WE state per truth table |
| VCC / VSS | Power / Ground | Single 5 V supply; decoupling required within 1 inch of VCC pin per JEDEC SOJ layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Byte-selectable write capability | Enables partial-word updates (e.g., updating only low byte of 16-bit register) without read-modify-write overhead |
| 7 ns OE-to-output valid delay | Reduces read latency in burst-access applications such as FIFO buffering and real-time DSP data streams |
| 10 mA CMOS-level standby current (ISB1) | Supports low-power idle states in battery-backed controllers and portable instrumentation |
| Industrial temperature qualification | Validated operation from –40°C to +85°C ensures reliability in motor control enclosures and outdoor base stations |
| No clock or refresh required | Eliminates external timing circuitry and simplifies PCB layout for deterministic memory access in safety-critical systems |
Applications
| Industrial PLC Data Buffers | DSP Co-Processor Memory |
|---|---|
Use Scenario: Storing real-time I/O scan data and ladder logic intermediate variables in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state 16-bit word access synchronized to PLC CPU bus timing. Use Value: 12 ns tAA and tRC enable full-speed interface with 80C188EC and similar industrial microcontrollers without wait-state insertion. | Use Scenario: Holding coefficient tables and intermediate FFT results in fixed-point digital signal processors used in audio analyzers and vibration monitors. IC Role / Device Role / Timing Role: High-bandwidth data scratchpad memory accessed concurrently by DSP core and DMA engine. Use Value: Byte-enable (BHE/BLE) support allows efficient 8-bit coefficient loading while preserving 16-bit result storage integrity. |
| Telecom Line Card Buffers | Medical Imaging Frame Stores |
Use Scenario: Temporary packet buffering and header manipulation in T1/E1 framer modules operating in extended temperature cabinets. IC Role / Device Role / Timing Role: Dual-port-capable SRAM acting as first-in-first-out (FIFO) buffer between serial framer and host processor bus. Use Value: Industrial temperature rating (–40°C to +85°C) and 10 mA ISB1 ensure stable operation during uncooled cabinet thermal cycling. | Use Scenario: Capturing and staging uncompressed grayscale image frames (e.g., 512×512 @ 16 bpp) in portable ultrasound devices before compression. IC Role / Device Role / Timing Role: High-reliability frame buffer memory interfaced directly to image sensor controller and JPEG encoder ASIC. Use Value: TTL-compatible I/O eliminates level translators, reducing BOM count and improving signal integrity at 12 ns access speeds. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZXC | 3.3 V supply, 45 ns access, 512K × 16 organization; lower speed but higher density and lower voltage | Requires level translation for 5 V systems; suited for newer low-voltage designs with relaxed timing | Select if migrating to 3.3 V architecture and >12 ns latency acceptable |
| AS6C1008-12PIN | 5 V supply, 12 ns access, 128K × 8 organization; same speed but narrower 8-bit bus and larger capacity | Needs two devices for 16-bit word access; increases board area and routing complexity | Select if 8-bit bus architecture dominates and higher density justifies dual-SOJ layout |
Compared with CY62167EV30LL-45ZXC and AS6C1008-12PIN, the IDT71016S12YI8 uniquely delivers 12 ns 16-bit word access at 5 V in a single SOJ package-critical for maintaining legacy 5 V controller compatibility without sacrificing performance or increasing component count.
Availability
IDT71016S12YI8 is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, medical imaging subsystems, and DSP co-processor modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IDT71016S12YI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology, Inc. (IDT) was a fabless semiconductor company specializing in timing, memory, interface, and RF solutions before its acquisition by Renesas Electronics in 2019.
The IDT71016 product line was designed for high-reliability, fully static memory applications in industrial automation, telecommunications infrastructure, and test equipment where zero-refresh operation and deterministic timing were mandatory.
FAQ
What is the maximum operating frequency supported by the IDT71016S12YI8?
The IDT71016S12YI8 does not use a clock and therefore has no operating frequency specification. Its performance is defined by timing parameters: minimum read cycle time (tRC) is 12 ns, corresponding to a maximum effective throughput of approximately 83 MHz for consecutive reads. This asynchronous behavior eliminates clock skew concerns in mixed-signal systems.
Does the IDT71016S12YI8 require external refresh circuitry?
No, the IDT71016S12YI8 is a fully static RAM and requires no refresh cycles or external refresh circuitry. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied and CS remains asserted or in CMOS-level standby (ISB1 mode). This simplifies system design for safety-critical and real-time applications.
Can the IDT71016S12YI8 be used with a 3.3 V microcontroller interface?
The IDT71016S12YI8 is specified for 5 V ±10% operation and features TTL-compatible inputs (VIH ≥ 2.2 V, VIL ≤ 0.8 V), but its outputs swing rail-to-rail (0 V to VCC). Direct connection to a 3.3 V microcontroller risks overvoltage damage to input pins. A level-shifting solution or voltage-tolerant I/O buffer is required for safe interoperability.
What is the function of the BHE and BLE pins on the IDT71016S12YI8?
The BHE (Bus High Enable) and BLE (Bus Low Enable) pins on the IDT71016S12YI8 independently control access to the upper (I/O8–I/O15) and lower (I/O0–I/O7) bytes of the 16-bit data bus. When asserted low with CS and WE, they permit byte-selective writes-enabling efficient updates of individual 8-bit fields without reading-modifying-writing the full 16-bit word.
Is the IDT71016S12YI8 still recommended for new designs?
No-the IDT71016S12YI8 was marked "Not recommended for new designs" in August 2000, and that notice was removed in February 2001 per the datasheet revision history. While technically viable and supported through legacy channels, modern designs should evaluate drop-in alternatives with extended longevity, RoHS compliance, and enhanced power efficiency unless backward compatibility is mandatory.
IDT71016S12YI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
IDT71016S12YI8 FAQ
1.How can I place an order for IDT71016S12YI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71016S12YI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71016S12YI8 reliable?
The price and inventory of IDT71016S12YI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71016S12YI8 is usually 5 days.
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IDT71016S12YI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71016S12YI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71016S12YI8?
For technical support, including IDT71016S12YI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71016S12YI8 requirements.
6.How does Aetrix verify that IDT71016S12YI8 is sourced from the original manufacturer or authorized distributors?
All IDT71016S12YI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71016S12YI8 meets industry standards.
7.What is the process for return or replacement of IDT71016S12YI8?
All IDT71016S12YI8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71016S12YI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71016S12YI8 part is unused and in its original packaging.
Return procedure for IDT71016S12YI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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