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Renesas IDT71016S20PH
- Part No.:
- IDT71016S20PH
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
IDT71016S20PH.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,117
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Product details
Overview
IDT71016S20PH from Integrated Device Technology is a 64K × 16-bit (1 Mbit) high-speed CMOS static RAM with 20 ns read/write cycle time, TTL-compatible I/O, and dual byte enable (BHE/BLE) for 8-bit subsystem interfacing. It operates from a single 5.0 V ±10% supply, supports commercial temperature range (0°C to +70°C), and is used in embedded controllers, industrial PLCs, and legacy communication interface buffers.
For engineers reviewing the IDT71016S20PH datasheet, IDT71016S20PH pinout, IDT71016S20PH application, or IDT71016S20PH equivalent, key selection criteria include access time (tAA ≤ 20 ns), standby current (ISB1 = 10 µA), byte-select capability, SOJ-44 package compatibility, and 5V-only operation without refresh circuitry.
Technical Context
The IDT71016S20PH implements fully static asynchronous memory architecture with no clocks or refresh required. Its address decoding uses row/column architecture over A0–A15, and bidirectional I/O drivers support simultaneous high-impedance control via CS, OE, BHE, and BLE.
Timing is governed by three independent control paths: chip-select–driven (tACS ≤ 20 ns), output-enable–driven (tOE ≤ 10 ns), and byte-enable–driven (tBE ≤ 10 ns). All inputs meet TTL voltage thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V), and outputs drive ±8 mA loads while maintaining VOH ≥ 2.4 V and VOL ≤ 0.4 V at VCC min.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576 bits); enables word-wide data transfers without external multiplexing |
| Access Time (tAA) | ≤20 ns at VCC = 4.5–5.5 V; determines minimum CPU wait-state insertion for 5V bus interfaces |
| Read Cycle Time (tRC) | 20 ns; defines maximum sustained random read throughput of 50 MHz |
| Standby Current (ISB1) | 10 µA at CMOS-level chip deselect (CS > VHC); enables ultra-low-power hold mode in battery-backed systems |
| I/O Voltage Compatibility | TTL-compatible inputs (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and outputs (VOH ≥ 2.4 V, VOL ≤ 0.4 V); interoperable with 5V microcontrollers and FPGAs |
| Byte Enable Support | Dedicated BHE and BLE pins allow independent 8-bit upper/lower byte writes; eliminates need for external byte-mask logic |
| Package | 44-pin Plastic SOJ (SO44-1), 400-mil width; JEDEC-standard footprint compatible with legacy PCB layouts |
Pinout & Package
44-pin Plastic SOJ (SO44-1), 400-mil body width, JEDEC standard, lead pitch 0.05 inch. Pin 1 marked by notch or dot; top view shown in datasheet Figure 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; fully decoded internally to select one of 64K words |
| CS | Chip Select | Active-low global enable; places device in standby (ISB1 = 10 µA) when high |
| OE | Output Enable | Active-low control of output drivers; tOE ≤ 10 ns ensures fast data release during read cycles |
| WE | Write Enable | Active-low write strobe; initiates write when CS and BHE/BLE are also low |
| BHE / BLE | Byte Enable (High/Low) | Independent 8-bit write masking: BHE controls I/O8–I/O15, BLE controls I/O0–I/O7 |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit TTL-compatible I/O; high-impedance when CS, OE, BHE, or BLE inactive |
| VCC | Power Supply | +5.0 V ±10%; powers all internal logic and I/O drivers |
| VSS | Ground | Reference return for all signals and power; two dedicated pins (pins 11 & 34) reduce ground bounce |
Key Features
| Feature | Design Value |
|---|---|
| Single 5V supply operation | Eliminates need for dual-voltage regulators or level shifters in 5V system designs |
| Byte-select write capability | Reduces bus contention and simplifies glue logic in 8-bit peripheral interfaces |
| Ultra-low ISB1 standby current | Enables retention in power-gated subsystems without external power switches |
| Asynchronous static architecture | Removes clock distribution, timing closure, and refresh overhead in microcontroller-based systems |
| TTL-compatible signaling | Direct connection to legacy 5V MCUs, CPLDs, and ASICs without interface buffers |
Applications
| Industrial PLC Data Buffers | Legacy Communication Interface Cards |
|---|---|
|
Use Scenario: Real-time I/O data buffering between fieldbus controllers and local processor in programmable logic controllers. IC Role / Device Role / Timing Role: High-reliability, non-refreshing SRAM providing deterministic 20 ns read/write latency for cyclic process data exchange. Use Value: Eliminates DRAM refresh jitter and supports deterministic scan-cycle timing critical for safety-rated control loops. |
Use Scenario: Protocol translation buffer in RS-485/RS-232 interface cards for industrial gateways. IC Role / Device Role / Timing Role: Dual-byte-accessible memory staging incoming/outgoing packets between UART and host bus. Use Value: Byte-enable pins allow independent handling of header (low byte) and payload (high byte), reducing firmware overhead. |
| Embedded Controller Boot Memory | Test Equipment Pattern Generators |
|
Use Scenario: Storing boot code and runtime variables in fixed-function embedded controllers where flash write endurance is limited. IC Role / Device Role / Timing Role: Fast-access, unlimited-write-cycle memory mapped into processor's lower address space. Use Value: 20 ns tAA enables zero-wait-state execution from SRAM, improving real-time response vs. flash-based execution. |
Use Scenario: Storing stimulus/response patterns in automated test equipment requiring precise timing alignment. IC Role / Device Role / Timing Role: Deterministic-access memory synchronized to pattern clock via simple address counter. Use Value: Fully static operation guarantees data integrity across power cycles and eliminates setup/hold violations in high-speed pattern sequencing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZXC | 512K × 16-bit, 45 ns access, 3.3 V core (with 5V-tolerant I/O), TSOP-44 | Higher density but slower speed; requires 3.3 V supply and level-aware design | Select when migrating to lower power and higher capacity, not for drop-in 5V/20 ns replacement |
| AS6C1008-20PCN | 128K × 8-bit, 20 ns access, 5 V only, SOJ-32 | 8-bit bus width and 32-pin package; lacks byte-enable and requires external data widening | Use only if redesigning for narrower bus and accepting pin-count reduction and missing BHE/BLE functionality |
Compared with CY62167EV30LL-45ZXC and AS6C1008-20PCN, the IDT71016S20PH uniquely delivers 64K × 16 organization, 20 ns speed, full 5V operation, and native byte enable in a 44-pin SOJ - making it irreplaceable in legacy 5V systems requiring exact timing and pin compatibility.
Availability
IDT71016S20PH is available at Aetrix Electronics and suitable for industrial automation, legacy communications infrastructure, and embedded controller upgrades requiring stable component supply and long-term obsolescence management.
Supply support for IDT71016S20PH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) was a fabless semiconductor company specializing in timing, memory interface, RF, and serial switching solutions before its acquisition by Renesas in 2019.
The IDT71016S20PH belongs to IDT's high-speed parallel SRAM product line, designed specifically for 5V microprocessor and DSP systems needing deterministic, low-latency, non-refreshing memory with byte-granular write control.
FAQ
What is the operating temperature range for the IDT71016S20PH?
The IDT71016S20PH is rated for commercial temperature operation from 0°C to +70°C. It is not specified for industrial range (–40°C to +85°C); that grade is designated by the 'I' suffix (e.g., IDT71016S20PHI). The 'PH' suffix confirms the 44-pin Plastic SOJ package and commercial temperature screening.
Does the IDT71016S20PH require a refresh circuit or clock signal?
No, the IDT71016S20PH is a fully static RAM and requires no refresh circuitry or clock input. Its asynchronous design relies solely on address, control (CS/OE/WE/BHE/BLE), and power (VCC/VSS) signals - enabling direct integration into microcontroller buses without timing controller overhead.
Can the IDT71016S20PH be used with a 3.3 V microcontroller interface?
No - the IDT71016S20PH is strictly a 5.0 V ±10% device. Its inputs require VIH ≥ 2.2 V and VIL ≤ 0.8 V, and outputs drive VOH ≥ 2.4 V. Direct connection to 3.3 V logic risks overvoltage damage and violates absolute maximum ratings; level-shifting circuitry is mandatory for mixed-voltage systems.
What is the meaning of the 'S20' in IDT71016S20PH?
The 'S20' in IDT71016S20PH denotes the speed grade: 20 ns read cycle time (tRC) and 20 ns access time (tAA). This distinguishes it from faster variants (S12, S15) and confirms guaranteed timing performance under commercial conditions with VCC = 4.5–5.5 V.
How does byte enable (BHE/BLE) function during a write operation on the IDT71016S20PH?
During a write, asserting BHE low enables writing to I/O8–I/O15 (high byte), while asserting BLE low enables writing to I/O0–I/O7 (low byte). Both can be asserted simultaneously for full 16-bit writes. When only one is active, the other byte remains unmodified - preserving data integrity without requiring read-modify-write sequences.
IDT71016S20PH Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
IDT71016S20PH FAQ
1.How can I place an order for IDT71016S20PH through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71016S20PH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71016S20PH reliable?
The price and inventory of IDT71016S20PH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71016S20PH is usually 5 days.
3.What payment methods are accepted for IDT71016S20PH?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71016S20PH transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71016S20PH?
IDT71016S20PH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71016S20PH order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71016S20PH?
For technical support, including IDT71016S20PH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71016S20PH requirements.
6.How does Aetrix verify that IDT71016S20PH is sourced from the original manufacturer or authorized distributors?
All IDT71016S20PH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71016S20PH meets industry standards.
7.What is the process for return or replacement of IDT71016S20PH?
All IDT71016S20PH units undergo pre-shipment inspection (PSI). If there is an issue with IDT71016S20PH, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71016S20PH part is unused and in its original packaging.
Return procedure for IDT71016S20PH:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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