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Renesas IDT71016S20PH8
- Part No.:
- IDT71016S20PH8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
IDT71016S20PH8.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,099
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Product details
Overview
IDT71016S20PH8 from Integrated Device Technology is a 64K × 16-bit (1 Mbit) high-speed CMOS static RAM with 20 ns access time, single 5V supply operation, TTL-compatible I/O, and dual byte enable (BHE/BLE) for flexible 8-bit or 16-bit data bus interfacing - used in legacy industrial controllers, telecom line cards, and embedded instrumentation requiring deterministic, no-refresh memory access.
For engineers reviewing the IDT71016S20PH8 datasheet, IDT71016S20PH8 pinout, IDT71016S20PH8 application, or IDT71016S20PH8 equivalent, key selection criteria include 20 ns read cycle time, 44-pin plastic SOJ package compatibility, byte-selectable write capability, and industrial temperature support (–40°C to +85°C) in a fully static asynchronous architecture.
Technical Context
The IDT71016S20PH8 implements a fully static, asynchronous memory array with no clocks or refresh required. Its architecture includes independent address decoding, bidirectional TTL-compatible I/O buffers, and three-level chip select (CS), output enable (OE), and write enable (WE) control logic enabling precise timing isolation between read and write operations.
Byte enable functionality (BHE/BLE) allows selective 8-bit writes to upper or lower data bytes without affecting adjacent bytes. The device supports multiple timing modes - CS-controlled, OE-controlled, and WE-controlled - with guaranteed tRC = 20 ns, tAA = 20 ns, and tOE = 10 ns under industrial conditions at VCC = 5.0 V ±10%.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576 bits); supports full-word or half-word data transfers via BHE/BLE. |
| Access Time (tAA) | 20 ns max (industrial range); defines worst-case delay from valid address to stable data output. |
| Read Cycle Time (tRC) | 20 ns max (industrial range); minimum interval between successive read operations. |
| Supply Voltage | 5.0 V ±10%; operates reliably across 4.5 V–5.5 V without regulation or external LDO. |
| Operating Temperature | –40°C to +85°C; qualified for industrial environments without derating or thermal management. |
| Standby Current (ISB1) | 10 µA max (CMOS-level chip deselect); enables ultra-low-power sleep mode when CS > VHC. |
| I/O Interface | TTL-compatible inputs/outputs; drives standard 5V logic loads without level shifters or bus transceivers. |
Pinout & Package
Package: 44-pin Plastic SOJ (SO44-1), JEDEC-standard 400-mil body, lead pitch 0.05 inch, gull-wing leads. Compatible with wave soldering and reflow profiles per J-STD-020.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; selects one of 65,536 memory locations for read/write access. |
| CS | Chip Select | Active-low global enable; places device in active or high-Z standby based on logic level. |
| OE | Output Enable | Active-low control for output drivers; decouples data bus during reads without affecting CS/WE state. |
| WE | Write Enable | Active-low signal initiating write cycle; latches data on I/O pins when CS and byte enables are asserted. |
| BHE / BLE | Byte Enable (High/Low) | Selects upper (I/O8–I/O15) or lower (I/O0–I/O7) byte for write; enables partial-word updates. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit multiplexed data path; direction controlled by WE and CS; TTL-compatible drive strength. |
| VCC / VSS | Power / Ground | Single 5V supply; requires local 0.1 µF ceramic bypass per VCC pin for noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Asynchronous Static Operation | No clock, no refresh, no wait states - simplifies timing design in microcontroller and FPGA-based systems. |
| Dual Byte Write Control | Independent BHE/BLE pins allow atomic 8-bit writes without read-modify-write cycles or bus contention. |
| Low Standby Power | 10 µA ISB1 current at CMOS-level CS deassertion - critical for battery-backed or energy-constrained systems. |
| TTL-Compatible I/O | Direct interface to 5V microprocessors (e.g., Intel 80C188, Motorola 68EC000) without level-shifting circuitry. |
| Industrial Temperature Range | Guaranteed 20 ns performance from –40°C to +85°C - validated for use in base station modules and PLC backplanes. |
Applications
| Industrial PLC Memory Buffer | Telecom Line Card Data Cache |
|---|---|
|
Use Scenario: Real-time I/O mapping and register storage in programmable logic controllers where deterministic latency is mandatory. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding configuration and status registers; accessed synchronously with scan cycle timing. Use Value: 20 ns tAA ensures sub-microsecond response to fieldbus interrupts, eliminating polling delays in safety-critical loops. |
Use Scenario: Temporary packet buffering and header processing in T1/E1 framing circuits within carrier-grade access equipment. IC Role / Device Role / Timing Role: High-speed scratchpad for frame alignment and CRC calculation engines operating at 2.048 Mbps. Use Value: Byte-enable capability allows efficient 8-bit header manipulation without disturbing payload data stored in adjacent bytes. |
| Legacy Microprocessor System Memory | Embedded Instrumentation Data Log |
|
Use Scenario: Main program/data RAM in 16-bit embedded systems using Motorola 68000-family CPUs with 20 ns bus timing budgets. IC Role / Device Role / Timing Role: Primary memory mapped at fixed address space; interfaces directly to CPU address/data/control buses. Use Value: Pin-compatible replacement for earlier 64K×16 SRAMs (e.g., HM628128) with identical SOJ footprint and timing margins. |
Use Scenario: Cyclic data capture buffer in portable test equipment logging analog sensor outputs at 10 kS/s over extended periods. IC Role / Device Role / Timing Role: Circular buffer storing timestamped samples before transfer to flash; powered continuously during acquisition. Use Value: 10 µA ISB1 current enables >1-year battery life in sleep mode between acquisition bursts, preserving last valid dataset. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-20ZSXIT | 20 ns access, 512K×16 organization, 3.3 V supply only; no 5 V tolerance. | Requires voltage translation or redesign for legacy 5 V systems; not drop-in compatible. | Select only if migrating to 3.3 V architecture and higher density is needed. |
| AS6C1008-20ZIN | 20 ns access, 64K×16, 5 V supply, but only commercial temp range (0°C to +70°C). | Lacks industrial qualification; unsuitable for uncontrolled ambient deployments. | Acceptable for cost-sensitive lab or office equipment where temperature stability is assured. |
Compared with IDT71016S20PH8, CY62167EV30LL-20ZSXIT offers double density but mandates 3.3 V infrastructure changes, while AS6C1008-20ZIN matches pinout and voltage but sacrifices industrial reliability - making IDT71016S20PH8 the sole choice for ruggedized 5 V systems demanding guaranteed –40°C to +85°C operation.
Availability
IDT71016S20PH8 is available at Aetrix Electronics and suitable for industrial automation, telecom infrastructure, and embedded instrumentation requiring stable component supply, long-lifecycle support, and verified second-source availability.
Supply support for IDT71016S20PH8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in timing, memory, and interface ICs before its acquisition by Renesas in 2019; known for high-reliability SRAMs and clock solutions.
IDT71016S20PH8 belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory in industrial and telecom systems where refresh-free operation and byte-selectable writes are essential.
FAQ
What is the maximum operating temperature range for the IDT71016S20PH8?
The IDT71016S20PH8 is rated for industrial temperature operation from –40°C to +85°C. This specification is guaranteed across all AC and DC parameters in the datasheet, including 20 ns access time and 10 µA standby current. It is not qualified for extended temperature ranges beyond this limit, and operation outside these bounds may result in timing violations or data retention loss.
Does the IDT71016S20PH8 require an external clock or refresh circuitry?
No, the IDT71016S20PH8 uses fully static CMOS memory cells and requires no clock input or periodic refresh cycles. Its asynchronous design means data remains valid indefinitely as long as power and CS are maintained, making it ideal for systems with irregular or event-driven memory access patterns.
Can the IDT71016S20PH8 be used with a 3.3 V microcontroller interface?
No - the IDT71016S20PH8 is strictly a 5 V device with TTL-compatible I/O thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V). Direct connection to 3.3 V logic risks undriven inputs and marginal noise margins. Level-shifting circuitry or a 5 V-tolerant controller interface is required for interoperability.
What does the 'PH8' suffix indicate in IDT71016S20PH8?
The 'PH8' suffix denotes the 44-pin plastic SOJ (SO44-1) package variant with industrial temperature grade. 'PH' specifies the SOJ body, and '8' indicates the industrial range (–40°C to +85°C), distinguishing it from commercial-grade versions ending in 'P' or 'PI'.
Is the IDT71016S20PH8 still recommended for new designs?
No - IDT discontinued new design recommendations for the IDT71016S20PH8 as of August 2000, though it remains available through authorized distributors and Aetrix Electronics for legacy system support, repair, and obsolescence mitigation with full traceability and extended lifecycle coordination.
IDT71016S20PH8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
IDT71016S20PH8 FAQ
1.How can I place an order for IDT71016S20PH8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71016S20PH8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71016S20PH8 reliable?
The price and inventory of IDT71016S20PH8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71016S20PH8 is usually 5 days.
3.What payment methods are accepted for IDT71016S20PH8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71016S20PH8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71016S20PH8?
IDT71016S20PH8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71016S20PH8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71016S20PH8?
For technical support, including IDT71016S20PH8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71016S20PH8 requirements.
6.How does Aetrix verify that IDT71016S20PH8 is sourced from the original manufacturer or authorized distributors?
All IDT71016S20PH8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71016S20PH8 meets industry standards.
7.What is the process for return or replacement of IDT71016S20PH8?
All IDT71016S20PH8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71016S20PH8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71016S20PH8 part is unused and in its original packaging.
Return procedure for IDT71016S20PH8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71016S20PH8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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