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Renesas IDT71016S20Y
- Part No.:
- IDT71016S20Y
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
IDT71016S20Y.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:4,693
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Product details
Overview
IDT71016S20Y from Integrated Device Technology is a 64K × 16-bit (1 Mbit) high-speed CMOS static RAM with 20 ns access time, TTL-compatible I/O, single 5V supply operation, and dual byte enable (BHE/BLE) for flexible 8-bit or 16-bit data bus interfacing - used in legacy industrial controllers, embedded instrumentation, and FPGA configuration memory buffers.
For engineers reviewing the IDT71016S20Y datasheet, IDT71016S20Y pinout, IDT71016S20Y application, or IDT71016S20Y equivalent, key selection considerations include 20 ns read cycle time, SOJ-44 package compatibility, 5V-only operation, and byte-selectable write capability in space-constrained industrial PCBs.
Technical Context
The IDT71016S20Y implements fully static asynchronous architecture with no clocks or refresh required. Its address decoding supports 16-bit parallel access across A0–A15, and bidirectional I/O drivers are directly TTL-compatible with VOH ≥ 2.4 V and VOL ≤ 0.4 V under load.
Control logic uses independent chip select (CS), output enable (OE), write enable (WE), and dual byte enables (BHE/BLE) to support word, high-byte, or low-byte read/write operations - enabling precise memory mapping in 80x86 and Z80-based systems without external gating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576 bits) - supports full 16-bit data bus transfers without interleaving |
| Access Time (tAA) | 20 ns max - determines minimum CPU wait-state insertion for 50 MHz bus interfaces |
| Read Cycle Time (tRC) | 20 ns max - defines shortest consecutive read interval for burst-access firmware loops |
| Supply Voltage | 5.0 V ±10% - requires stable 4.5–5.5 V rail; not compatible with 3.3 V or mixed-voltage systems |
| Standby Current (ISB) | 45 mA max (industrial) - sets baseline power draw during system sleep modes |
| I/O Capacitance | CI/O = 7 pF - limits trace length and fanout in high-density PCB layouts |
| Operating Temperature | –40°C to +85°C - qualified for extended-range industrial environments without derating |
Pinout & Package
Package: 44-pin Plastic SOJ (SO44-1), JEDEC standard, 400-mil width, lead pitch 0.05 inch - compatible with wave-solder and reflow profiles for through-hole replacement designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus interface; fully decoded internally to access all 64K words |
| I/O0–I/O7 | Low-Byte Data I/O | Bi-directional 8-bit data path enabled only when BLE = L; isolated during high-byte ops |
| I/O8–I/O15 | High-Byte Data I/O | Bi-directional 8-bit data path enabled only when BHE = L; isolated during low-byte ops |
| CS | Chip Select | Active-low global enable; device enters standby (high-Z I/O) when CS = H |
| OE | Output Enable | Active-low control for read-data output drivers; tOE = 10 ns max ensures timing closure with fast microcontrollers |
| WE | Write Enable | Active-low write strobe; initiates write when CS, BHE/BLE, and WE all low simultaneously |
| BHE | High-Byte Enable | Active-low signal selecting I/O8–I/O15 for byte-write; allows partial-word updates without read-modify-write |
| BLE | Low-Byte Enable | Active-low signal selecting I/O0–I/O7 for byte-write; enables 8-bit peripheral register emulation |
| VCC | Power Supply | +5.0 V ±10% input; decoupling capacitor required within 0.5 inch of pin per layout guidelines |
| VSS | Ground | Signal and power ground reference; must be connected to low-impedance plane |
Key Features
| Feature | Design Value |
|---|---|
| Equal access and cycle times | tAA = tRC = 20 ns - eliminates need for asymmetric timing margins in synchronous bus controllers |
| Dual byte enable (BHE/BLE) | Independent 8-bit write masking - enables efficient peripheral register access and avoids full-word overwrites |
| TTL-compatible I/O | VOH ≥ 2.4 V, VOL ≤ 0.4 V at 4 mA - interoperates directly with 74LS, 74F, and early microprocessor families |
| Low-power standby mode | ISB1 = 10 mA max (CMOS-level CS) - reduces idle power in battery-backed or energy-sensitive systems |
| 44-pin SOJ/TSOP packaging | JEDEC-standard footprint - supports drop-in replacement for legacy SRAMs in existing industrial PCBs |
Applications
| Industrial PLC Memory Buffer | FPGA Configuration Storage |
|---|---|
Use Scenario: Storing real-time I/O mapping tables and ladder logic state variables in programmable logic controllers operating in factory-floor environments. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding volatile runtime data; accessed via 16-bit ISA-like bus with 20 ns timing constraints. Use Value: Enables deterministic scan-cycle execution by guaranteeing 20 ns read/write response without wait states or refresh overhead. | Use Scenario: Holding configuration bitstreams for Xilinx Spartan or Altera MAX EPLD devices during power-up initialization sequences. IC Role / Device Role / Timing Role: Parallel boot-ROM replacement; loaded by FPGA's master serial mode controller using 16-bit parallel interface. Use Value: Reduces configuration time by 40% vs. serial PROMs; supports hot-swap reconfiguration via external processor writes. |
| Legacy Microcontroller Expansion | Test Equipment Data Acquisition Buffer |
Use Scenario: Extending on-chip RAM in Z80- or 80C188-based embedded instruments where internal memory is insufficient for waveform storage. IC Role / Device Role / Timing Role: External memory mapped at fixed address range; accessed using WAIT signal generation based on tRC = 20 ns. Use Value: Adds 1 Mbit of zero-wait-state RAM without requiring external glue logic or clock domain bridging. | Use Scenario: Capturing high-speed analog-to-digital samples in benchtop oscilloscopes and spectrum analyzers before transfer to host PC. IC Role / Device Role / Timing Role: Circular buffer memory; written continuously by DMA controller at up to 50 MHz effective rate using burst reads. Use Value: Sustains 20 MB/s sustained write throughput with deterministic latency, enabling real-time FFT processing on captured segments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY7C1019DV33-10ZXC | 3.3 V supply, 10 ns access, TSOP-44 - lower voltage, faster speed, different logic thresholds | Requires level-shifting for 5 V systems; unsuitable for legacy 5 V-only designs | Select only if migrating to 3.3 V architecture and redesigning power delivery and I/O interface |
| ISSI IS61LV25616AL-10TLI | 3.3 V supply, 10 ns access, SOJ-44 - same pinout but incompatible voltage and timing margins | Not drop-in; needs PCB revision for VCC/GND routing and pull-up adjustments | Consider for new designs targeting lower power and higher speed, but not for IDT71016S20Y replacement |
Compared with CY7C1019DV33-10ZXC and IS61LV25616AL-10TLI, the IDT71016S20Y remains the only 5 V, 20 ns, SOJ-44 SRAM with verified industrial temperature support and direct TTL compatibility - critical for maintaining legacy system functionality without hardware modification.
Availability
IDT71016S20Y is available at Aetrix Electronics and suitable for industrial PLCs, FPGA configuration systems, legacy microcontroller expansions, and test equipment data acquisition buffers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IDT71016S20Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in timing, memory interface, and RF solutions before its acquisition by Renesas in 2019.
The IDT71016S20Y belongs to IDT's legacy high-speed parallel SRAM product line, designed specifically for 5 V industrial computing systems requiring deterministic, no-refresh memory performance with byte-selectable write capability.
FAQ
What is the operating voltage range for the IDT71016S20Y?
The IDT71016S20Y operates strictly from a single 5.0 V supply with a tolerance of ±10%, meaning 4.5 V to 5.5 V. It is not 3.3 V tolerant, and applying voltages outside this range may cause permanent damage or unpredictable behavior. The IDT71016S20Y does not support mixed-voltage I/O or dual-supply operation.
Does the IDT71016S20Y require a clock or refresh circuit?
No, the IDT71016S20Y uses fully static CMOS memory cells and asynchronous control logic, so it requires neither a clock signal nor periodic refresh cycles. This simplifies system design by eliminating timing-critical refresh controllers and reducing power variability - a key advantage of the IDT71016S20Y in deterministic real-time applications.
What is the function of BHE and BLE pins on the IDT71016S20Y?
The BHE (High-Byte Enable) and BLE (Low-Byte Enable) pins on the IDT71016S20Y independently control which 8-bit half of the 16-bit data bus is active during write operations. When BHE = L and BLE = H, only I/O8–I/O15 are written; when BLE = L and BHE = H, only I/O0–I/O7 are written - enabling precise byte-level updates without read-modify-write overhead in the IDT71016S20Y.
Is the IDT71016S20Y pin-compatible with other 44-pin SOJ SRAMs?
The IDT71016S20Y follows JEDEC-standard SOJ-44 pinout (SO44-1), matching mechanical and basic signal placement (A0–A15, I/O0–I/O15, CS, OE, WE, VCC, VSS). However, functional compatibility depends on timing, voltage, and control logic - e.g., byte enable behavior and 5 V TTL thresholds make direct substitution with 3.3 V SRAMs unsafe without validation. The IDT71016S20Y is not guaranteed pin-compatible with non-IDT parts.
What is the maximum data retention time for the IDT71016S20Y when powered down?
The IDT71016S20Y is a volatile SRAM and retains data only while powered and within specified operating conditions. When VCC drops below 2.0 V or is removed entirely, data is lost within microseconds - no data retention capability exists without continuous power. Unlike NVSRAM or battery-backed RAM, the IDT71016S20Y provides no inherent non-volatility or backup power path.
IDT71016S20Y Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
IDT71016S20Y FAQ
1.How can I place an order for IDT71016S20Y through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71016S20Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71016S20Y reliable?
The price and inventory of IDT71016S20Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71016S20Y is usually 5 days.
3.What payment methods are accepted for IDT71016S20Y?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71016S20Y transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71016S20Y?
IDT71016S20Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71016S20Y order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71016S20Y?
For technical support, including IDT71016S20Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71016S20Y requirements.
6.How does Aetrix verify that IDT71016S20Y is sourced from the original manufacturer or authorized distributors?
All IDT71016S20Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71016S20Y meets industry standards.
7.What is the process for return or replacement of IDT71016S20Y?
All IDT71016S20Y units undergo pre-shipment inspection (PSI). If there is an issue with IDT71016S20Y, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71016S20Y part is unused and in its original packaging.
Return procedure for IDT71016S20Y:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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