Renesas IDT71016S20Y8

Overview

IDT71016S20Y8 from Integrated Device Technology is a 64K × 16-bit (1 Mbit) high-speed CMOS static RAM with 20 ns access time, TTL-compatible I/O, single 5V supply operation, and dual byte enable (BHE/BLE) for flexible 8-bit or 16-bit data bus interfacing - used in legacy industrial controllers and embedded memory subsystems requiring deterministic asynchronous timing.

For engineers reviewing the IDT71016S20Y8 datasheet, IDT71016S20Y8 pinout, IDT71016S20Y8 application, or IDT71016S20Y8 equivalent, key selection criteria include verified 20 ns read cycle time (tRC), SOJ-44 package compatibility, byte-selectable write capability, and industrial temperature range (–40°C to +85°C) support.

Technical Context

The IDT71016S20Y8 implements fully static asynchronous circuitry with no clocks or refresh required, using address-decoded row/column architecture and TTL-level input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V). Its bidirectional I/O buffers support simultaneous high-impedance control via CS, OE, BHE, and BLE.

Timing is governed by three independent enable paths: chip-select–controlled (tACS = 20 ns max), output-enable–controlled (tOE = 10 ns max), and byte-enable–controlled (tBE = 10 ns max), all validated under VCC = 5.0 V ±10% and industrial temperature conditions.

Key Specifications

Pinout & Package

Package: 44-pin Plastic SOJ (SO44-1), JEDEC standard, 400-mil width, lead pitch 0.05 inch, body height 0.145 inch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Compared with CY62167EV30LL-20ZSXIT and AS6C1008-20ZIN, the IDT71016S20Y8 uniquely delivers true 5 V operation with dedicated BHE/BLE pins and 10 ns tOE - making it the only option among the three that supports hardware byte writes in legacy 5 V industrial systems without redesign.

Availability

IDT71016S20Y8 is available at Aetrix Electronics and suitable for industrial PLC upgrades, legacy test equipment refurbishment, and automotive diagnostics hardware requiring stable component supply and long-term obsolescence management.

Supply support for IDT71016S20Y8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in timing, memory, and interface solutions before its acquisition by Renesas in 2019; known for high-reliability SRAMs and clock products.

The IDT71016S20Y8 belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for industrial and automotive systems needing deterministic 5 V asynchronous memory with byte-select capability.

FAQ

What is the operating temperature range specified for the IDT71016S20Y8?

The IDT71016S20Y8 is rated for industrial temperature operation from –40°C to +85°C, as confirmed in the "Recommended Operating Temperature and Supply Voltage" table and AC Electrical Characteristics section of the datasheet. This specification applies to all timing parameters including tAA, tRC, and tOE, ensuring reliable performance in harsh environments such as factory floors or vehicle engine compartments.

Does the IDT71016S20Y8 support true 8-bit write operations without external logic?

Yes, the IDT71016S20Y8 supports true hardware 8-bit writes via dedicated BHE (high-byte enable) and BLE (low-byte enable) pins. When only BHE is asserted, I/O8–I/O15 are written while I/O0–I/O7 remain unchanged; similarly, asserting only BLE writes I/O0–I/O7. This eliminates the need for external byte-mask gates or bus transceivers in 8-bit microprocessor interfaces.

What is the maximum dynamic current draw of the IDT71016S20Y8 during active operation?

The IDT71016S20Y8 draws a maximum dynamic operating current (ICC) of 170 mA under worst-case conditions: VCC = 5.5 V, f = fMAX (50 MHz), and all outputs open. This value is explicitly listed in Table 08 ("DC Electrical Characteristics") for the S20 industrial speed grade and must be accounted for in power budgeting for densely populated memory subsystems.

Is the IDT71016S20Y8 pin-compatible with other speed grades in the IDT71016 family?

Yes, the IDT71016S20Y8 shares identical pinout and package (44-pin SOJ) with IDT71016S12Y8 and IDT71016S15Y8. All variants use the same SO44-1 footprint and electrical interface; only timing parameters differ - enabling direct replacement in systems where 20 ns access meets timing margin requirements.

What is the output enable propagation delay (tOE) for the IDT71016S20Y8?

The output enable propagation delay (tOE) for the IDT71016S20Y8 is guaranteed at 10 ns maximum, measured from OE going low to valid data appearing on I/O pins, under VCC = 4.5–5.5 V and industrial temperature conditions. This parameter is specified in Table 10 ("AC Electrical Characteristics") and is critical for synchronizing data capture in microprocessor read cycles.