Renesas IDT71016S20YI
- Part No.:
- IDT71016S20YI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
IDT71016S20YI.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:

- Shipping:

Inventory:4,542
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IDT71016S20YI from Integrated Device Technology is a 64K × 16-bit (1 Mbit) high-speed CMOS static RAM with 20 ns access time, TTL-compatible I/O, single 5V supply operation, and dual byte enable (BHE/BLE) for flexible 8-bit or 16-bit data bus interfacing - used in industrial embedded controllers requiring deterministic memory timing.
For engineers reviewing the IDT71016S20YI datasheet, IDT71016S20YI pinout, IDT71016S20YI application, or IDT71016S20YI equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), 44-pin SOJ package compatibility, 20 ns read cycle time, and byte-selectable write capability without external logic.
Technical Context
The IDT71016S20YI implements fully static asynchronous architecture with no clocks or refresh required. Its address decoding, sense amplifiers, and bidirectional I/O buffers are all CMOS-based and operate from a single 5.0 V ±10% supply.
It supports three independent write control modes: chip-select–driven, write-enable–driven, and byte-enable–driven, with guaranteed timing parameters including tAA = 20 ns, tRC = 20 ns, and tOE = 10 ns under industrial conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576 bits), enabling direct interface to 16-bit microprocessors without data splitting logic |
| Access Time (tAA) | 20 ns max at VCC = 4.5–5.5 V and TA = –40°C to +85°C - defines minimum address-to-data valid delay in read cycles |
| Read Cycle Time (tRC) | 20 ns max - sets shortest interval between successive read operations on same device |
| Supply Voltage | 5.0 V ±10% - compatible with legacy 5V TTL/CMOS system rails without level-shifting |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments including motor drives and PLCs |
| Standby Current (ISB1) | 10 µA max at CMOS-level chip deselect (CS > VHC) - enables ultra-low-power sleep states |
| I/O Interface | TTL-compatible inputs and outputs - eliminates need for bus interface translators in mixed-logic systems |
Pinout & Package
Package: 44-pin Plastic SOJ (SO44-1), JEDEC standard, 400-mil width, lead pitch 0.05 inch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus accepting full 64K word space; latched internally on CS/WE transitions |
| CS | Chip Select | Active-low enable controlling device participation in bus cycles; enables low-power standby when high |
| WE | Write Enable | Active-low signal qualifying write operations; combined with BHE/BLE to select byte or word writes |
| OE | Output Enable | Active-low control of output drivers; allows shared bus operation with tri-state isolation in 10 ns |
| BHE, BLE | Byte Enable | Independent active-low controls for upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes |
| I/O0–I/O15 | Bidirectional Data | 16-bit multiplexed data path; direction determined by WE and OE states per cycle |
| VCC, VSS | Power/Ground | Single 5V supply pins; decoupling required within 0.5 inch due to 170 mA dynamic ICC |
Key Features
| Feature | Design Value |
|---|---|
| Dual Byte Enable (BHE/BLE) | Enables independent 8-bit writes to high or low byte without masking logic or extra control lines |
| 20 ns Industrial-Grade Timing | Guaranteed tAA/tRC ≤ 20 ns across –40°C to +85°C, supporting real-time deterministic memory access |
| CMOS-Level Standby (ISB1) | 10 µA max current when CS held above VHC - reduces idle power in battery-backed or energy-sensitive systems |
| TTL-Compatible I/O | VIH ≥ 2.2 V and VOL ≤ 0.4 V at 8 mA drive - interoperates directly with 74LS, 74F, and early microprocessor buses |
| No Clock or Refresh Required | Fully static design eliminates timing-critical refresh cycles and clock distribution networks |
Applications
| Industrial PLC Memory Buffer | Legacy 16-Bit Microprocessor Cache |
|---|---|
Use Scenario: Real-time I/O scanning in programmable logic controllers where deterministic memory latency is critical for scan-cycle consistency. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer storing process image data with 20 ns access guaranteeing sub-100 µs scan times. Use Value: Eliminates wait states on 80C186/80C188-based controllers, maintaining hard real-time response without external timing glue. | Use Scenario: Instruction/data cache for 16-bit embedded CPUs such as Motorola 68000 or Intel 80286 in test equipment and avionics subsystems. IC Role / Device Role / Timing Role: High-speed scratchpad memory mapped into CPU address space with byte-selectable writes for efficient stack and register file access. Use Value: Enables zero-wait-state execution at 12.5 MHz CPU clock via 20 ns tRC, reducing instruction fetch overhead by >35% vs. slower SRAM. |
| Telecom Line Card Frame Buffer | Medical Imaging Data Pipeline |
Use Scenario: Temporary storage of T1/E1 frame payloads in channelized line cards where bursty traffic demands fast random access. IC Role / Device Role / Timing Role: Dual-port–emulated buffer using OE-controlled read/write separation and BHE/BLE for channel-aligned byte writes. Use Value: Supports 1.544 Mbps T1 payload buffering with <50 ns worst-case read-modify-write latency for HDLC processing. | Use Scenario: Pixel data staging in ultrasound or digital X-ray front-end modules before FPGA-based compression or display rendering. IC Role / Device Role / Timing Role: Burst-mode acquisition buffer synchronized to ADC sampling clocks, leveraging tAS = 0 ns setup requirement for tight timing margins. Use Value: Captures 12-bit pixel streams at 20 MSPS without FIFO overflow, using full 16-bit bus width and 20 ns tAA for back-to-back reads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-20ZSXIT | 3.3 V core supply, 20 ns access, 48-pin TSOP - requires level translation for 5V systems | Targeted at newer low-voltage designs; lacks native 5V TTL compatibility | Select only if migrating to 3.3 V system architecture and redesigning I/O interface |
| AS6C1008-20ZIN | 5 V supply, 20 ns access, 32-pin SOJ - 128K × 8 organization, no byte enables | Requires two devices for 16-bit bus; no BHE/BLE, limiting byte-granularity control | Acceptable for cost-sensitive 8-bit bus systems but adds board area and routing complexity for 16-bit use |
Compared with CY62167EV30LL-20ZSXIT and AS6C1008-20ZIN, the IDT71016S20YI uniquely delivers 5V TTL compatibility, integrated BHE/BLE, and 44-pin SOJ packaging in a single device - making it the only drop-in replacement for legacy 16-bit industrial designs requiring zero layout change.
Availability
IDT71016S20YI is available at Aetrix Electronics and suitable for industrial automation, telecom infrastructure, and medical imaging systems requiring stable component supply and long-lifecycle support.
Supply support for IDT71016S20YI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in timing, memory, and interface ICs before its acquisition by Renesas in 2019.
The IDT71016 family was designed specifically for high-reliability, 5V parallel SRAM applications in industrial and telecom equipment where pin-compatible upgrade paths and guaranteed AC timing were essential.
FAQ
What is the maximum operating temperature range for the IDT71016S20YI?
The IDT71016S20YI is rated for industrial temperature operation from –40°C to +85°C. This specification is guaranteed across all AC and DC parameters in the datasheet, including tAA = 20 ns and ISB1 = 10 µA, making it suitable for deployment in harsh environments like factory floors and outdoor telecom cabinets.
Does the IDT71016S20YI require a clock signal or refresh circuitry?
No, the IDT71016S20YI uses fully static CMOS memory cells and requires neither a clock nor periodic refresh. Its operation is purely asynchronous - address, CS, WE, OE, and byte enables directly control read/write behavior with no hidden timing dependencies, simplifying system design and eliminating refresh-related jitter.
Can the IDT71016S20YI be used in a 5V-only system without level shifters?
Yes, the IDT71016S20YI features true TTL-compatible inputs (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and outputs (VOH ≥ 2.4 V at –4 mA, VOL ≤ 0.4 V at 8 mA), allowing direct connection to 5V microcontrollers, FPGAs, and bus transceivers without level-shifting components.
What is the function of the BHE and BLE pins on the IDT71016S20YI?
The BHE (Bus High Enable) and BLE (Bus Low Enable) pins on the IDT71016S20YI independently control write access to the upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes. When asserted low with WE, they allow byte-selective writes - critical for efficient stack operations, peripheral register updates, and mixed-endian data handling in 16-bit systems.
Is the IDT71016S20YI still recommended for new designs?
Yes - unlike earlier speed grades marked "Not recommended for new designs" in 2000, the February 2001 revision of the IDT71016S20YI datasheet explicitly removed that notice. The IDT71016S20YI remains a viable option for industrial retrofits and long-lifecycle programs where 5V parallel SRAM compatibility and SOJ footprint are mandatory.
IDT71016S20YI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
IDT71016S20YI FAQ
1.How can I place an order for IDT71016S20YI through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71016S20YI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71016S20YI reliable?
The price and inventory of IDT71016S20YI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71016S20YI is usually 5 days.
3.What payment methods are accepted for IDT71016S20YI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71016S20YI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71016S20YI?
IDT71016S20YI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71016S20YI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71016S20YI?
For technical support, including IDT71016S20YI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71016S20YI requirements.
6.How does Aetrix verify that IDT71016S20YI is sourced from the original manufacturer or authorized distributors?
All IDT71016S20YI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71016S20YI meets industry standards.
7.What is the process for return or replacement of IDT71016S20YI?
All IDT71016S20YI units undergo pre-shipment inspection (PSI). If there is an issue with IDT71016S20YI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71016S20YI part is unused and in its original packaging.
Return procedure for IDT71016S20YI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71016S20YI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

