Renesas IDT71024S12TY
- Part No.:
- IDT71024S12TY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
IDT71024S12TY.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOJ
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IDT71024S12TY from Renesas Electronics is a 128K × 8-bit (1 Mbit) high-speed CMOS static RAM with 12 ns access time, industrial temperature range (–40°C to +85°C), single 5V supply operation, and TTL-compatible bidirectional I/O. It serves as main or cache memory in embedded controllers, industrial PLCs, and legacy communication equipment requiring deterministic, no-refresh asynchronous operation.
For engineers reviewing the IDT71024S12TY datasheet, IDT71024S12TY pinout, IDT71024S12TY application, or IDT71024S12TY equivalent, key selection criteria include guaranteed 12 ns read cycle time, dual chip select architecture with independent OE control, SOJ-32 package compatibility, and low-power standby modes (ISB1 = 10 mA) for power-constrained systems.
Technical Context
The IDT71024S12TY implements fully static asynchronous logic with no clocks or refresh cycles required. Its dual CS architecture (CS1 active-low, CS2 active-high) enables hierarchical memory decoding, while OE allows output gating without affecting internal state.
All inputs and outputs are TTL-compatible (VIH = 2.2 V min, VIL = 0.8 V max), and the device supports both WE-controlled and CS-controlled write timing. Power management includes two standby modes: ISB (40 mA, TTL-level CS inactive) and ISB1 (10 mA, CMOS-level CS inactive).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 8-bit (1,048,576 bits); supports byte-wide data bus interfacing without external demultiplexing |
| Access Time (tAA) | 12 ns max at VCC = 4.5–5.5 V and TA = –40°C to +85°C; enables ≤83 MHz burst read throughput in synchronous glue logic |
| Supply Voltage | 5.0 V ±10% (4.5–5.5 V); compatible with legacy 5V TTL/CMOS system rails without level shifting |
| Standby Current (ISB1) | 10 mA max at VCC = 5.5 V, full CMOS-level deselection; reduces idle power in always-on industrial modules |
| Output Enable Delay (tOE) | 6 ns max; allows tight timing alignment between address valid and data valid in fast microprocessor bus cycles |
| Package | 32-pin Plastic SOJ, 300-mil width (PJG32); footprint-compatible with industry-standard SRAM sockets and wave-solder processes |
| Operating Temperature | –40°C to +85°C industrial grade; qualified for deployment in motor drives, base station line cards, and railway signaling hardware |
Pinout & Package
32-pin Plastic SOJ (300-mil width, PJG32), JEDEC MS-012AC compliant. Pin 1 index located at top-left corner (notch side up), with pins numbered counter-clockwise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus (A0 LSB to A16 MSB); decodes 128K locations; no internal latching - requires stable address during CS1/CS2 active window |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit TTL-compatible data path; direction controlled by WE and CS states; high-impedance when deselected or during write setup |
| CS1 | Chip Select 1 (Active Low) | Primary enable; must be LOW with CS2 HIGH for read/write; enables internal timing paths and power-up sequence |
| CS2 | Chip Select 2 (Active High) | Secondary enable; complements CS1 for hierarchical decode; both CS1=LOW and CS2=HIGH required for device activation |
| OE | Output Enable (Active Low) | Gates output drivers only; does not affect internal memory state or write functionality; supports bus sharing with other peripherals |
| WE | Write Enable (Active Low) | Controls write cycle initiation; LOW during overlap of valid CS1/CS2 enables data capture on I/O lines; HIGH enables read mode |
| VCC | Power Supply | +5V supply pin (Pin 24); requires local 0.1 µF ceramic bypass capacitor per JEDEC guidelines |
| GND | Ground | Signal reference (Pin 16); must be connected to system ground plane with low-inductance path to minimize noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| 12 ns guaranteed access time | Enables direct interface with 80C188, 68EC000, and Z80-based controllers without wait-state insertion |
| Dual chip select (CS1/CS2) architecture | Supports multi-chip memory banks and partial-address decoding in space-constrained PCB layouts |
| Two-tier standby current (ISB = 40 mA / ISB1 = 10 mA) | Allows dynamic power scaling: ISB1 engaged during deep sleep (e.g., watchdog timer active), ISB during light standby |
| TTL-compatible I/O with 5V supply only | Eliminates need for level translators in legacy 5V systems; simplifies BOM and layout for industrial retrofits |
| SOJ-32 300-mil package | Provides mechanical robustness and thermal performance superior to TSOP in vibration-prone environments (e.g., factory automation) |
Applications
| Industrial PLC Memory | Legacy Telecom Line Card Buffer |
|---|---|
|
Use Scenario: Storing real-time I/O mapping tables and ladder logic state variables in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Asynchronous scratchpad memory accessed directly by 16-bit microcontroller bus with no DMA or cache coherency overhead. Use Value: 12 ns tAA ensures deterministic scan-cycle execution under worst-case temperature and voltage conditions, meeting IEC 61131-3 cycle-time guarantees. |
Use Scenario: Holding frame buffers and protocol translation tables in E1/T1 channel banks and multiplexers built before 2010. IC Role / Device Role / Timing Role: Byte-wide SRAM acting as dual-port-accessible register file for HDLC controller and DSP co-processor. Use Value: Dual CS pins allow clean separation between control-plane (CS1-driven) and data-plane (CS2-driven) accesses, reducing bus arbitration latency. |
| Railway Signaling Logic Storage | Medical Imaging Subsystem Cache |
|
Use Scenario: Storing fail-safe interlocking logic tables and sensor history logs in EN 5012x-certified trackside electronic units. IC Role / Device Role / Timing Role: Non-volatile-configurable memory mapped into safety-critical microcontroller address space with ECC disabled. Use Value: Industrial temperature rating (–40°C to +85°C) and SOJ package integrity ensure reliable operation inside unheated trackside cabinets exposed to wide ambient swings. |
Use Scenario: Caching raw pixel data during CT/MRI image reconstruction pipelines where FPGA-based accelerators require low-latency memory access. IC Role / Device Role / Timing Role: Burst-capable SRAM interfaced via custom parallel bus to Xilinx Spartan-3 FPGA with dedicated I/O banks. Use Value: 6 ns tOE and 3 ns tCLZ enable sub-10 ns data valid windows, matching FPGA register-to-register timing closure requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-45ZAXI | 55 ns access time, 3.3 V supply only, 32-pin TSOP-II package | Requires level-shifting and redesign for 5V systems; lower power but incompatible voltage domain | Select only if migrating to 3.3 V architecture and accepting slower timing; not drop-in for IDT71024S12TY |
| AS6C1008-12PIN | 12 ns access, 5 V supply, 32-pin SOJ (PBG32, 400-mil), ISB1 = 25 mA | Larger 400-mil SOJ footprint; higher standby current limits use in ultra-low-power battery-backed modules | Valid alternative if board layout accommodates wider SOJ; verify PCB pad dimensions and thermal relief for PJG32 vs PBG32 |
Compared with CY62128EV30LL-45ZAXI and AS6C1008-12PIN, the IDT71024S12TY uniquely delivers 12 ns performance in a 300-mil SOJ at 5 V while maintaining 10 mA ISB1 - making it the only option for space-constrained, legacy 5V industrial designs requiring both speed and ultra-low deep-standby current.
Availability
IDT71024S12TY is available at Aetrix Electronics and suitable for industrial PLCs, railway signaling electronics, and legacy telecom infrastructure requiring stable component supply across extended product lifecycles.
Supply support for IDT71024S12TY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The IDT71024S12TY belongs to Renesas' legacy high-speed parallel SRAM product line, designed specifically for deterministic, no-refresh memory interfacing in 5V industrial control and communications systems.
FAQ
What is the maximum operating frequency supported by the IDT71024S12TY?
The IDT71024S12TY does not operate on a clock signal - it is an asynchronous static RAM. Its 12 ns access time (tAA) and 12 ns read cycle time (tRC) define the fastest achievable bus transaction rate: one read every 12 ns, equivalent to an effective 83.3 MHz burst rate when address and control signals meet timing constraints. The IDT71024S12TY requires no clock input or refresh circuitry.
Does the IDT71024S12TY support battery backup or non-volatility?
No, the IDT71024S12TY is a volatile CMOS static RAM and loses all stored data when VCC drops below 2.0 V or is removed. It does not integrate battery-switching circuitry, write-protection registers, or NVSRAM functionality. For non-volatile retention, external battery-backed SRAM controllers or separate EEPROM/NVRAM must be used alongside the IDT71024S12TY.
Can the IDT71024S12TY be used with a 3.3 V microcontroller bus?
No - the IDT71024S12TY is strictly a 5 V device with TTL-compatible thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and requires VCC = 4.5–5.5 V. Direct connection to a 3.3 V bus risks violating input voltage limits and causing excessive current leakage. Level-shifting ICs such as the TXB0108 or discrete resistor-divider networks are mandatory for safe interfacing with 3.3 V controllers.
What is the difference between ISB and ISB1 standby current in the IDT71024S12TY?
ISB (40 mA max) activates when either CS1 or CS2 is driven to TTL-inactive levels (CS1 ≥ 2.2 V or CS2 ≤ 0.2 V), placing the device in light standby. ISB1 (10 mA max) engages only when both CS1 and CS2 meet stricter CMOS thresholds (CS1 ≥ VCC–0.2 V and CS2 ≤ 0.2 V), achieving deeper power savings. The IDT71024S12TY uses this dual-mode scheme to optimize power across varying system sleep states.
Is the IDT71024S12TY pin-compatible with other speed grades like IDT71024S15TY or IDT71024S20TY?
Yes - all IDT71024SxxTY variants (12 ns, 15 ns, 20 ns) share identical pinout, package (PJG32 SOJ), and functional behavior. The only differences are AC timing parameters and corresponding ICC/ISB values. A design qualified with IDT71024S12TY can substitute IDT71024S15TY or IDT71024S20TY without PCB changes, though timing margins must be re-verified for the slower speed grade.
IDT71024S12TY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOJ
IDT71024S12TY FAQ
1.How can I place an order for IDT71024S12TY through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71024S12TY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71024S12TY reliable?
The price and inventory of IDT71024S12TY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71024S12TY is usually 5 days.
3.What payment methods are accepted for IDT71024S12TY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71024S12TY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71024S12TY?
IDT71024S12TY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71024S12TY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71024S12TY?
For technical support, including IDT71024S12TY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71024S12TY requirements.
6.How does Aetrix verify that IDT71024S12TY is sourced from the original manufacturer or authorized distributors?
All IDT71024S12TY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71024S12TY meets industry standards.
7.What is the process for return or replacement of IDT71024S12TY?
All IDT71024S12TY units undergo pre-shipment inspection (PSI). If there is an issue with IDT71024S12TY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71024S12TY part is unused and in its original packaging.
Return procedure for IDT71024S12TY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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