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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas IDT71024S12YI

Name: IDT71024S12YI
Brand: Renesas
SKU: IDT71024S12YI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDT71024S12YI

Manufacturer:: Renesas

Category:: Memory

Package:: 32-BSOJ (0.400", 10.16mm Width)

Datasheet:: IDT71024S12YI.pdf

Description:: IC SRAM 1MBIT PARALLEL 32SOJ

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Product details

Overview

IDT71024S12YI from Renesas Electronics is a 128K × 8-bit (1 Mbit) high-speed CMOS static RAM operating at 5 V, with 12 ns access time and industrial temperature range (–40°C to +85°C), packaged in 32-pin 400-mil Plastic SOJ. It serves as asynchronous main memory or buffer storage in embedded controllers, data acquisition systems, and real-time communication interfaces requiring deterministic timing and zero-refresh operation.

For engineers reviewing the IDT71024S12YI datasheet, IDT71024S12YI pinout, IDT71024S12YI application, or IDT71024S12YI equivalent, key selection criteria include TTL-compatible bidirectional I/O, dual chip select architecture with independent OE control, low-power standby modes (ISB1 = 10 mA), and guaranteed 12 ns read/write cycle timing under industrial conditions.

Technical Context

The IDT71024S12YI implements fully static asynchronous logic with no clocks or refresh cycles required. Its dual CS architecture (CS1 active-low, CS2 active-high) enables hierarchical memory decoding, while OE allows output gating independent of chip selection - critical for bus sharing in multi-master systems.

All inputs and outputs are TTL-compatible (VIH = 2.2 V min, VIL = 0.8 V max), and the device supports two distinct standby states: ISB (40 mA, TTL-level deselect) and ISB1 (10 mA, CMOS-level full standby). Address access time (tAA = 12 ns) and cycle time (tRC = 12 ns) are matched, ensuring symmetrical read/write performance.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 8-bit (1,048,576 bits); supports byte-wide parallel data interface without address multiplexing.
Access / Cycle Time	12 ns (max); enables ≤83.3 MHz burst read/write throughput in synchronous bus environments.
Supply Voltage	5.0 V ± 10% (4.5–5.5 V); compatible with legacy 5 V TTL/CMOS system rails without level translation.
Operating Temperature	–40°C to +85°C; qualified for industrial-grade reliability in factory automation and transportation electronics.
Standby Current (ISB1)	10 mA max; achieved when CS1 ≥ VHC or CS2 ≤ VLC, enabling ultra-low-power sleep mode during idle periods.
I/O Interface	TTL-compatible bidirectional data bus (I/O0–I/O7); eliminates need for external bus transceivers in 5 V systems.
Output Enable Delay	tOE = 6 ns max; ensures fast data assertion after OE activation, minimizing bus turnaround latency.

Pinout & Package

Package: 32-pin 400-mil Plastic SOJ (PBG32), surface-mount, gull-wing leads, JEDEC MS-012AC compliant.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit address bus (A0 LSB to A16 MSB); fully decoded for direct 128K-word addressing without external demultiplexing.
I/O0–I/O7	Bidirectional Data Bus	8-bit TTL-compatible data path; direction controlled by WE and CS states - no external direction control needed.
CS1	Chip Select 1 (active-low)	Primary enable; device selected only when CS1 = L and CS2 = H - prevents partial selection glitches.
CS2	Chip Select 2 (active-high)	Secondary enable; complements CS1 to form AND-gated chip enable, supporting hierarchical memory mapping.
OE	Output Enable (active-low)	Gates outputs independently of CS; allows data read without asserting CS, useful for bus arbitration and diagnostic access.
WE	Write Enable (active-low)	Controls write latching; write occurs only during overlap of CS1 = L, CS2 = H, and WE = L - eliminates spurious writes.
VCC	Power Supply	+5 V supply pin; decoupling required within 10 mm per JEDEC guidelines to maintain 12 ns timing integrity.
GND	Ground Reference	Signal and power ground return; dedicated pin minimizes noise coupling into sensitive address/data paths.

Key Features

Feature	Design Value
Matched Access & Cycle Times	12 ns tAA = tRC ensures predictable bus timing margins in both read and write phases - simplifies controller timing design.
Dual Chip Select Architecture	CS1 (active-low) + CS2 (active-high) enables robust decode logic with glitch immunity and flexible memory partitioning.
Two-Tier Standby Power Control	ISB = 40 mA (TTL deselect) and ISB1 = 10 mA (CMOS deselect) allow graded power management based on system wake-up latency requirements.
Zero-Refresh Static Operation	Fully static CMOS core eliminates DRAM-style refresh overhead, reducing CPU load and guaranteeing deterministic latency.
TTL-Compatible I/O	Direct interface with 5 V microcontrollers, FPGAs, and ASICs without level shifters - reduces BOM count and layout complexity.

Applications

Industrial PLC Memory Buffer	Medical Imaging Frame Store
Use Scenario: Storing real-time sensor input buffers and control command queues in programmable logic controllers deployed in factory-floor environments. IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM providing deterministic 12 ns read/write response for cyclic I/O scanning and motion control loops. Use Value: Industrial temperature rating (–40°C to +85°C) and matched tAA/tRC ensure timing compliance across thermal cycling, avoiding watchdog timeouts or jitter-induced servo errors.	Use Scenario: Holding uncompressed grayscale image frames (e.g., 1024 × 1024 × 8-bit) during acquisition and preprocessing in portable ultrasound or X-ray units. IC Role / Device Role / Timing Role: High-speed frame buffer enabling pixel-rate streaming between ADC and DSP without FIFO bottlenecks. Use Value: 12 ns access time supports >80 MB/s sustained bandwidth, sufficient for real-time 30 fps video capture at VGA resolution.
Avionics Data Logger	Test & Measurement Equipment
Use Scenario: Capturing flight parameter snapshots (GPS, IMU, engine telemetry) during transient events in certified airborne data recorders. IC Role / Device Role / Timing Role: Non-volatile-buffered SRAM stage (paired with flash) for crash-survivable data retention with zero refresh dependency. Use Value: Fully static operation guarantees data integrity during power interruptions or brownouts common in aircraft electrical systems.	Use Scenario: Serving as acquisition memory in digital oscilloscopes and logic analyzers capturing high-speed serial protocol bursts (e.g., SPI, UART). IC Role / Device Role / Timing Role: Deep buffer memory interfaced directly to FPGA-based trigger engines for pre/post-trigger sample storage. Use Value: Bidirectional I/O and independent OE allow seamless integration with FPGA I/O banks, eliminating glue logic and reducing PCB layer count.

Industrial PLC Memory Buffer

Medical Imaging Frame Store

Use Scenario: Storing real-time sensor input buffers and control command queues in programmable logic controllers deployed in factory-floor environments.

IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM providing deterministic 12 ns read/write response for cyclic I/O scanning and motion control loops.

Use Value: Industrial temperature rating (–40°C to +85°C) and matched tAA/tRC ensure timing compliance across thermal cycling, avoiding watchdog timeouts or jitter-induced servo errors.

Use Scenario: Holding uncompressed grayscale image frames (e.g., 1024 × 1024 × 8-bit) during acquisition and preprocessing in portable ultrasound or X-ray units.

IC Role / Device Role / Timing Role: High-speed frame buffer enabling pixel-rate streaming between ADC and DSP without FIFO bottlenecks.

Use Value: 12 ns access time supports >80 MB/s sustained bandwidth, sufficient for real-time 30 fps video capture at VGA resolution.

Avionics Data Logger

Test & Measurement Equipment

Use Scenario: Capturing flight parameter snapshots (GPS, IMU, engine telemetry) during transient events in certified airborne data recorders.

IC Role / Device Role / Timing Role: Non-volatile-buffered SRAM stage (paired with flash) for crash-survivable data retention with zero refresh dependency.

Use Value: Fully static operation guarantees data integrity during power interruptions or brownouts common in aircraft electrical systems.

Use Scenario: Serving as acquisition memory in digital oscilloscopes and logic analyzers capturing high-speed serial protocol bursts (e.g., SPI, UART).

IC Role / Device Role / Timing Role: Deep buffer memory interfaced directly to FPGA-based trigger engines for pre/post-trigger sample storage.

Use Value: Bidirectional I/O and independent OE allow seamless integration with FPGA I/O banks, eliminating glue logic and reducing PCB layer count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY62128EV30LL-45ZAXI	512K × 8-bit, 45 ns access, 3.3 V supply; higher density but slower speed and different voltage domain.	Requires level-shifting in 5 V systems; suitable for lower-speed, higher-capacity buffering where timing margin is relaxed.	Select when capacity >128K is required and 5 V compatibility is not mandatory.
AS6C1008-12PIN	128K × 8-bit, 12 ns access, 5 V supply; single CS pin, no CS2; OE tied to CS in some variants.	Lacks dual-CS decode flexibility; may require external logic for complex memory maps or bus arbitration.	Select for cost-sensitive 5 V designs where hierarchical chip select is unnecessary and board space is constrained.

Compared with CY62128EV30LL-45ZAXI and AS6C1008-12PIN, the IDT71024S12YI uniquely delivers 12 ns timing at 5 V with dual-CS architecture and industrial temperature support - making it optimal for legacy 5 V real-time systems demanding precise decode control and thermal resilience.

Availability

IDT71024S12YI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, and avionics data loggers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IDT71024S12YI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The IDT71024S12YI belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for 5 V embedded systems needing deterministic, zero-refresh memory with industrial-grade reliability and TTL interoperability.

FAQ

What is the maximum clock frequency supported by the IDT71024S12YI?

The IDT71024S12YI is an asynchronous static RAM and does not use a clock signal. Its maximum effective data rate is determined by its 12 ns read/write cycle time (tRC), supporting up to 83.3 MHz burst transfers when interfaced with a synchronous controller. Timing is governed solely by address, CS, OE, and WE setup/hold relationships - no clock tree or skew management is required for IDT71024S12YI operation.

Does the IDT71024S12YI require refresh circuitry?

No, the IDT71024S12YI is a fully static RAM and requires no refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied and operating specifications (VCC, temperature) are met. This eliminates refresh overhead in microcontroller or FPGA-based systems and guarantees deterministic access latency - a key advantage of IDT71024S12YI over DRAM alternatives.

What is the function of the CS2 pin on the IDT71024S12YI?

CS2 is an active-high chip select that must be asserted HIGH simultaneously with CS1 asserted LOW for the IDT71024S12YI to enter active mode. This dual-CS architecture prevents partial selection during address or control signal transitions, improving noise immunity in electrically noisy industrial environments. When CS2 is LOW, the IDT71024S12YI enters standby regardless of CS1 state - a feature not found in single-CS SRAMs.

Can the IDT71024S12YI operate with a 3.3 V supply?

No, the IDT71024S12YI is specified exclusively for 5.0 V ± 10% operation (4.5–5.5 V). Its input thresholds (VIH = 2.2 V min, VIL = 0.8 V max) and output drive strength are optimized for TTL-compatible 5 V systems. Using 3.3 V will result in non-compliant VIH levels, unreliable read/write behavior, and potential data corruption. For 3.3 V designs, consider Renesas' later-generation low-voltage SRAMs - not the IDT71024S12YI.

What package type is used for the IDT71024S12YI?

The IDT71024S12YI uses a 32-pin 400-mil Plastic SOJ (Small Outline J-lead) package, identified as PBG32 in Renesas' ordering nomenclature. This gull-wing surface-mount package has 0.050" lead pitch and conforms to JEDEC MS-012AC. It is distinct from the 300-mil SOJ (PJG32) variant and requires specific footprint and reflow profile validation for IDT71024S12YI assembly.

IDT71024S12YI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 32-BSOJ (0.400", 10.16mm Width)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 1Mbit

Memory Organization:: 128K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 12ns

Access Time:: 12 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 32-SOJ

IDT71024S12YI FAQ

1.How can I place an order for IDT71024S12YI through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71024S12YI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71024S12YI reliable?

The price and inventory of IDT71024S12YI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71024S12YI is usually 5 days.

3.What payment methods are accepted for IDT71024S12YI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71024S12YI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71024S12YI?

IDT71024S12YI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71024S12YI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71024S12YI?

For technical support, including IDT71024S12YI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71024S12YI requirements.

6.How does Aetrix verify that IDT71024S12YI is sourced from the original manufacturer or authorized distributors?

All IDT71024S12YI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71024S12YI meets industry standards.

7.What is the process for return or replacement of IDT71024S12YI?

All IDT71024S12YI units undergo pre-shipment inspection (PSI). If there is an issue with IDT71024S12YI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71024S12YI part is unused and in its original packaging.

Return procedure for IDT71024S12YI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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