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Renesas IDT71124S12YI
- Part No.:
- IDT71124S12YI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
IDT71124S12YI.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:1,862
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Product details
Overview
IDT71124S12YI from Renesas Electronics is a 128K × 8-bit (1 Mbit) high-speed CMOS static RAM with 12 ns access time, JEDEC center-power/GND pinout for noise reduction, TTL-compatible bidirectional I/O, and single 5 V supply operation. It serves as main or cache memory in industrial embedded controllers requiring deterministic timing and zero-refresh operation.
For engineers reviewing the IDT71124S12YI datasheet, IDT71124S12YI pinout, IDT71124S12YI application, or IDT71124S12YI equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), 12 ns read cycle time, SOJ-32 package compatibility, and low standby current (10 mA ISB1) in full CMOS standby mode.
Technical Context
The IDT71124S12YI implements fully static asynchronous logic with no clocks or refresh cycles required. Its architecture features independent chip select (CS) and output enable (OE) controls, enabling fast read access (tAA = 12 ns) and rapid output disable (tOHZ = 5 ns).
It uses center-power/GND pinout (VCC on pins 5 & 24, GND on pins 13 & 20) to minimize simultaneous switching noise. All inputs and outputs are TTL-compatible, and operation is guaranteed across –40°C to +85°C with 5.0 V ±10% supply.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 8-bit (1,048,576-bit array), byte-wide data interface |
| Access Time (tAA) | 12 ns maximum - enables CPU bus interfacing at ≤83 MHz sustained burst rate |
| Read Cycle Time (tRC) | 12 ns minimum - defines shortest consecutive read interval without address hold violation |
| Supply Voltage | 4.5 V to 5.5 V - supports legacy 5 V TTL/CMOS system rails with ±10% tolerance |
| Operating Temperature | –40°C to +85°C - qualified for industrial control, motor drives, and factory automation |
| Standby Current (ISB1) | 10 mA maximum at VCC max and f = 0 - enables low-power sleep modes with CMOS-level CS deassertion |
| I/O Capacitance | 8 pF typical - limits signal edge degradation on PCB traces up to ~5 cm in length |
Pinout & Package
Package: 32-pin 400-mil Plastic SOJ (PBG32), surface-mount, gull-wing leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K-word decoding; no internal latching |
| I/O0–I/O7 | Bidirectional Data Bus | TTL-compatible 8-bit data path; high-impedance when CS or OE inactive |
| CS | Chip Select | Active-low enable; device enters standby (ISB1 = 10 mA) when held >VHC (≈4.8 V) |
| OE | Output Enable | Active-low control of output drivers; tOE = 6 ns ensures tight timing with microprocessor RD# |
| WE | Write Enable | Active-low write strobe; initiates write cycle only when CS is also low |
| VCC (pins 5, 24) | Power Supply | Dual VCC pins centered per JEDEC pinout reduce power rail inductance and SSN |
| GND (pins 13, 20) | Ground Reference | Dual ground pins symmetrically placed opposite VCC to improve return path integrity |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center-Power/GND Pinout | Reduces simultaneous switching noise by 30–40% vs. conventional SOJ layouts, improving signal integrity in dense PCBs |
| Separate CS and OE Controls | Enables partial-memory reads without toggling chip select, reducing power and bus contention in multi-SRAM systems |
| Full Static Operation | Zero refresh overhead and no clock required - simplifies timing design and eliminates DRAM controller complexity |
| TTL-Compatible I/O | Direct interface to legacy microprocessors (e.g., 80C188, 68EC000) without level-shifting circuitry |
| Industrial Temperature Range | Guaranteed parametric performance from –40°C to +85°C - suitable for uncooled industrial enclosures |
Applications
| Industrial PLC Memory | Legacy Microcontroller Cache |
|---|---|
|
Use Scenario: Non-volatile program/data storage buffer in programmable logic controllers operating in factory-floor environments with wide ambient temperature swings and EMI exposure. IC Role / Device Role / Timing Role: Byte-accessible SRAM providing deterministic 12 ns read/write latency for ladder logic execution and I/O image updates. Use Value: Eliminates need for external wait-state generation due to guaranteed tAA ≤12 ns and tWC ≤12 ns across full industrial temperature range. |
Use Scenario: Instruction/data cache for 16-bit microcontrollers (e.g., Intel 80C186, Motorola 68HC11) in medical instrumentation where firmware must execute without DRAM refresh jitter. IC Role / Device Role / Timing Role: Asynchronous memory mapped directly into CPU address space, accessed via standard RD#/WR# strobes. Use Value: Full static operation ensures zero-cycle penalty on branch misprediction or interrupt latency - critical for real-time response ≤10 µs. |
| Automated Test Equipment Buffer | Avionics Data Acquisition Module |
|
Use Scenario: High-speed pattern buffer in ATE systems capturing digital test vectors at ≥50 MHz sampling rates under thermal cycling conditions. IC Role / Device Role / Timing Role: Dual-port-capable (via OE/WE sequencing) temporary storage for stimulus/response data before FPGA-based compression. Use Value: Low tCHZ (≤7 ns) and tOHZ (≤5 ns) allow clean bus turnaround between capture and upload phases without added glue logic. |
Use Scenario: Radiation-tolerant-adjacent data logging in non-safety-critical avionics subsystems (e.g., environmental monitoring) operating at altitude-induced low pressure and wide thermal gradients. IC Role / Device Role / Timing Role: Buffered sensor data store synchronized to discrete aircraft bus timing (ARINC 429, MIL-STD-1553) via external sequencer. Use Value: 10 mA ISB1 current at full CMOS standby enables battery-backed retention during 10+ minute power interruptions without thermal runaway risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-45ZAXI | 128K × 8, 45 ns access, 3.3 V core (with 5 V tolerant I/O), TSOP-32 package | Requires level translation for pure 5 V systems; higher tAA limits max bus frequency to ~22 MHz | Select when migrating to lower-power 3.3 V domains with backward-compatible I/O voltage |
| AS6C1008-12PIN | 128K × 8, 12 ns access, 5 V supply, PDIP-32 and SOJ-32 packages available | No center-power/GND pinout - higher SSN in high-density layouts; lacks ISB1 <15 mA spec | Select for through-hole prototyping or cost-sensitive industrial designs where noise margin exceeds requirement |
Compared with CY62128EV30LL-45ZAXI and AS6C1008-12PIN, the IDT71124S12YI uniquely delivers 12 ns timing at 5 V with JEDEC-optimized SOJ-32 layout and sub-10 mA CMOS standby - making it optimal for noise-sensitive, thermally demanding 5 V embedded systems.
Availability
IDT71124S12YI is available at Aetrix Electronics and suitable for industrial PLCs, legacy microcontroller systems, automated test equipment, and avionics data loggers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IDT71124S12YI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.
The IDT71124S12YI belongs to Renesas' legacy high-speed SRAM product line, designed specifically for deterministic, zero-refresh memory interfacing in 5 V industrial control and instrumentation systems.
FAQ
What is the operating temperature range specified for the IDT71124S12YI?
The IDT71124S12YI is rated for industrial operation from –40°C to +85°C. This range is explicitly confirmed in the Renesas datasheet's "Recommended Operating Temperature and Supply Voltage" table and applies to all speed grades offered in the YI suffix variant, including the 12 ns version.
Does the IDT71124S12YI require a clock or refresh circuit?
No, the IDT71124S12YI is a fully static RAM and requires no clock input or periodic refresh cycles. Its asynchronous design allows direct connection to microprocessor address/data/control buses using only CS, OE, and WE signals - eliminating DRAM controller overhead.
What does the 'YI' suffix indicate in IDT71124S12YI?
The 'YI' suffix denotes the 400-mil Plastic SOJ (PBG32) package and industrial temperature grade (–40°C to +85°C). Per Renesas' ordering information table, 'Y' = SOJ-32, 'I' = industrial temp, and 'S12' = 12 ns speed grade - confirming full qualification at extended temperature.
Can the IDT71124S12YI be used with a 3.3 V microcontroller interface?
No - the IDT71124S12YI is strictly a 5 V device with TTL-compatible inputs requiring VIH ≥2.2 V and VIL ≤0.8 V, and it draws supply current only from a 4.5–5.5 V rail. Interfacing to 3.3 V logic requires level-shifting circuitry; it is not 3.3 V tolerant.
What is the significance of the center-power/GND pinout in the IDT71124S12YI?
The JEDEC center-power/GND pinout places VCC on pins 5 and 24 and GND on pins 13 and 20 - symmetrically distributing power and ground connections. This reduces simultaneous switching noise (SSN) by shortening current loop inductance and improves signal integrity in high-speed 5 V bus designs using the IDT71124S12YI.
IDT71124S12YI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOJ
IDT71124S12YI FAQ
1.How can I place an order for IDT71124S12YI through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71124S12YI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71124S12YI reliable?
The price and inventory of IDT71124S12YI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71124S12YI is usually 5 days.
3.What payment methods are accepted for IDT71124S12YI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71124S12YI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71124S12YI?
IDT71124S12YI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71124S12YI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71124S12YI?
For technical support, including IDT71124S12YI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71124S12YI requirements.
6.How does Aetrix verify that IDT71124S12YI is sourced from the original manufacturer or authorized distributors?
All IDT71124S12YI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71124S12YI meets industry standards.
7.What is the process for return or replacement of IDT71124S12YI?
All IDT71124S12YI units undergo pre-shipment inspection (PSI). If there is an issue with IDT71124S12YI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71124S12YI part is unused and in its original packaging.
Return procedure for IDT71124S12YI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71124S12YI Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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