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Renesas IDT71124S20Y
- Part No.:
- IDT71124S20Y
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
IDT71124S20Y.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:1,796
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Product details
Overview
IDT71124S20Y from Renesas Electronics is a 128K × 8-bit (1 Mbit) high-speed CMOS static RAM with 20 ns access time, JEDEC center-power/GND pinout for noise reduction, TTL-compatible I/O, and single 5 V supply operation. It serves as main or cache memory in embedded controllers, industrial PLCs, and legacy communication interfaces requiring deterministic, no-refresh asynchronous operation.
For engineers reviewing the IDT71124S20Y datasheet, IDT71124S20Y pinout, IDT71124S20Y application, or IDT71124S20Y equivalent, key selection criteria include guaranteed 20 ns read cycle time, 32-pin 400-mil SOJ package compatibility, industrial temperature support (–40°C to +85°C), and dual chip select/output enable control logic for bus arbitration in multi-SRAM systems.
Technical Context
The IDT71124S20Y implements fully static asynchronous architecture-no clocks or refresh cycles required-with independent CS and OE controls enabling fast read/write switching and output tri-state management. Its bidirectional I/O pins operate at TTL voltage levels (VIH = 2.2 V min, VIL = 0.8 V max) and tolerate 5 V ±10% supply across commercial and industrial grades.
JEDEC-compliant center-power/GND pinout (VCC on pins 5 & 24, GND on pins 13 & 20) minimizes simultaneous switching noise and improves signal integrity in dense PCB layouts. The device supports both WE-controlled and CS-controlled write timing modes, with tWP ≥ 15 ns and tDW ≥ 9 ns under industrial conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 8-bit (1,048,576 bits), byte-wide parallel interface |
| Access Time (tAA) | 20 ns max - defines minimum address-to-data-valid delay in read cycles |
| Read Cycle Time (tRC) | 20 ns max - sets shortest interval between successive read operations |
| Supply Voltage | 4.5 V to 5.5 V - compatible with standard 5 V TTL/CMOS logic rails |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded systems |
| Standby Current (ISB1) | 10 µA max - ultra-low power in full CMOS standby (CS > VHC) |
| I/O Capacitance | 8 pF max - ensures minimal loading on data bus traces |
Pinout & Package
Package: 32-pin 400-mil Plastic SOJ (PBG32), JEDEC-standard center-power/GND layout with VCC on pins 5 and 24, GND on pins 13 and 20.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K-word decoding |
| I/O0–I/O7 | Bidirectional Data Bus | TTL-compatible 8-bit data path; high-impedance when OE or CS inactive |
| CS | Chip Select | Active-low enable; deassertion places outputs in high-Z and reduces ICC to ISB/ISB1 |
| OE | Output Enable | Active-low control for output drivers only; allows read while CS remains asserted |
| WE | Write Enable | Active-low write strobe; enables data latching on rising edge of WE during CS low |
| VCC (pins 5, 24) | Power Supply | Dual VCC pins reduce IR drop and improve noise immunity per JEDEC pinout |
| GND (pins 13, 20) | Ground Reference | Dual GND pins symmetrically placed to minimize ground bounce |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC center-power/GND pinout | Reduces simultaneous switching noise by 30–40% vs. conventional SOJ layouts |
| Asynchronous static operation | Eliminates need for clock distribution or refresh circuitry in host system design |
| Separate CS and OE controls | Enables overlapping read cycles and dynamic bus sharing without external logic |
| Industrial temperature range | Validated operation from –40°C to +85°C supports deployment in harsh environments |
| Low standby current (ISB1 = 10 µA) | Extends battery life in always-on monitoring or backup memory applications |
Applications
| Industrial PLC Memory Buffer | Legacy Network Interface Cache |
|---|---|
Use Scenario: Storing real-time I/O mapping tables and ladder logic state variables in programmable logic controllers. IC Role / Device Role / Timing Role: Byte-accessible non-refreshing memory providing deterministic 20 ns read latency for scan-cycle execution. Use Value: Enables sub-100 µs PLC scan times with zero refresh overhead and robust operation across wide temperature swings. | Use Scenario: Caching packet headers and protocol state in T1/E1 line cards and serial communications processors. IC Role / Device Role / Timing Role: High-speed parallel SRAM interfacing directly to UART/DMA controllers via 8-bit data bus. Use Value: Supports 1.544 Mbps T1 throughput with <20 ns memory latency, eliminating wait states in legacy telecom ASIC designs. |
| Embedded Controller Boot ROM Shadow | Test Equipment Pattern Memory |
Use Scenario: Mirroring boot firmware from slower flash into fast SRAM during initialization in microcontroller-based instrumentation. IC Role / Device Role / Timing Role: Read-only shadow memory mapped at reset vector; accessed with 20 ns tAA for fast instruction fetch. Use Value: Reduces boot time by >60% versus direct flash execution, while maintaining pin compatibility with legacy 128K×8 designs. | Use Scenario: Storing digital stimulus/response patterns in automated test equipment (ATE) channel modules. IC Role / Device Role / Timing Role: Deterministic-access pattern buffer synchronized to test clock edges using CS/OE timing control. Use Value: Guarantees 20 ns read/write repeatability across temperature, critical for pass/fail margin testing at production speeds. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-45ZSXIT | 45 ns access time, 3.3 V supply, 32-pin TSOP-II package | Requires level-shifting for 5 V systems; lower power but slower timing | Select when migrating to 3.3 V platforms and timing budgets allow ≥45 ns latency |
| AS6C1008-20PCN | 20 ns access, 5 V supply, 32-pin SOJ, but only commercial temp (0°C to +70°C) | Lacks industrial temperature qualification; identical pinout and AC timing | Use where ambient operating temperature stays within commercial range and cost sensitivity favors alternate sourcing |
Compared with CY62128EV30LL-45ZSXIT and AS6C1008-20PCN, the IDT71124S20Y uniquely delivers 20 ns performance at 5 V with industrial temperature support in the legacy 32-pin SOJ footprint-making it the only drop-in replacement for existing designs requiring extended thermal reliability without board redesign.
Availability
IDT71124S20Y is available at Aetrix Electronics and suitable for industrial PLCs, legacy telecom interfaces, embedded controller boot buffers, and ATE pattern memory requiring stable component supply and long-term lifecycle support.
Supply support for IDT71124S20Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The IDT71124S20Y belongs to Renesas' legacy high-speed parallel SRAM product line, designed specifically for deterministic, no-refresh memory subsystems in industrial control and telecommunications equipment where 5 V compatibility and JEDEC-standard SOJ packaging remain essential.
FAQ
What is the maximum operating temperature range supported by the IDT71124S20Y?
The IDT71124S20Y is qualified for industrial temperature operation from –40°C to +85°C. This rating is confirmed in the "Recommended Operating Temperature and Supply Voltage" table and applies to all speed grades including the 20 ns variant. The device maintains full AC/DC specifications across this range when powered with 5.0 V ±10%.
Does the IDT71124S20Y require a clock or refresh signal to retain data?
No, the IDT71124S20Y uses fully static CMOS memory cells and requires no clock, refresh, or periodic access to retain data. As stated in the Functional Description, "Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation." Data remains valid indefinitely as long as VCC is maintained within specification and CS is held high during standby.
What is the function of the dual VCC and dual GND pins on the IDT71124S20Y?
The IDT71124S20Y implements a JEDEC-revolutionary center-power/GND pinout: VCC appears on pins 5 and 24, and GND on pins 13 and 20. This symmetrical placement reduces power supply inductance, minimizes ground bounce, and lowers simultaneous switching noise-critical for signal integrity in high-density 5 V systems using the IDT71124S20Y.
Can the IDT71124S20Y be used with a 3.3 V microcontroller interface?
No-the IDT71124S20Y is specified only for 5 V ±10% operation (4.5 V to 5.5 V) and features TTL-compatible inputs (VIH = 2.2 V min, VIL = 0.8 V max). Direct connection to 3.3 V logic violates VIH/VIL thresholds and risks unreliable operation. Level-shifting circuitry is required for interoperability with 3.3 V controllers.
How does the Output Enable (OE) pin interact with Chip Select (CS) during read operations?
In the IDT71124S20Y, OE and CS operate independently: CS must be low to enable the chip, while OE low activates output drivers. When CS is low and OE is high, outputs enter high-impedance state-allowing multiple IDT71124S20Y devices to share a common data bus without external bus transceivers. This dual-control scheme supports flexible memory banking and interleaved access.
IDT71124S20Y Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOJ
IDT71124S20Y FAQ
1.How can I place an order for IDT71124S20Y through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71124S20Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71124S20Y reliable?
The price and inventory of IDT71124S20Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71124S20Y is usually 5 days.
3.What payment methods are accepted for IDT71124S20Y?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71124S20Y transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71124S20Y?
IDT71124S20Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71124S20Y order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71124S20Y?
For technical support, including IDT71124S20Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71124S20Y requirements.
6.How does Aetrix verify that IDT71124S20Y is sourced from the original manufacturer or authorized distributors?
All IDT71124S20Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71124S20Y meets industry standards.
7.What is the process for return or replacement of IDT71124S20Y?
All IDT71124S20Y units undergo pre-shipment inspection (PSI). If there is an issue with IDT71124S20Y, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71124S20Y part is unused and in its original packaging.
Return procedure for IDT71124S20Y:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71124S20Y Tags
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