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Renesas IDT71124S20YI
- Part No.:
- IDT71124S20YI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
IDT71124S20YI.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:2,095
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Product details
Overview
IDT71124S20YI from Renesas Electronics is a 128K × 8-bit (1 Mbit) high-speed CMOS static RAM with 20 ns access time, JEDEC center-power/GND pinout for noise reduction, TTL-compatible bidirectional I/O, and single 5 V supply operation. It serves as main or cache memory in industrial embedded controllers requiring deterministic timing and no refresh.
For engineers reviewing the IDT7124S20YI datasheet, IDT71124S20YI pinout, IDT71124S20YI application, or IDT71124S20YI equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), SOJ-32 package compatibility, 20 ns read/write cycle timing, and low standby current (10 mA ISB1).
Technical Context
The IDT71124S20YI implements fully static asynchronous architecture-no clocks or refresh cycles required. Its control logic supports independent chip select (CS) and output enable (OE), enabling fast read access (tAA = 20 ns) and write cycle control (tWC = 20 ns) with WE-driven or CS-driven timing modes.
JEDEC-compliant center-power/GND pinout reduces simultaneous switching noise; bidirectional I/O pins operate at TTL voltage levels (VIH = 2.2 V, VIL = 0.8 V) with 8 pF input/I/O capacitance. Standby current drops to 10 mA (ISB1) under CMOS-level deselection (CS > VHC).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 8-bit (1,048,576-bit total); supports byte-wide data bus interfacing without external demultiplexing. |
| Access Time (tAA) | 20 ns max; defines worst-case delay from address valid to valid data on I/O pins during read operations. |
| Read Cycle Time (tRC) | 20 ns max; minimum interval between successive read operations, critical for burst throughput in controller buffers. |
| Supply Voltage | 4.5 V to 5.5 V; compatible with legacy 5 V TTL/CMOS system rails without level-shifting. |
| Operating Temperature | –40°C to +85°C; qualified for industrial environments including factory automation and motor drives. |
| Standby Current (ISB1) | 10 mA max at VCC = 5.5 V, f = 0; enables low-power hold mode when CS is held high at CMOS threshold. |
| I/O Capacitance | 8 pF (CI/O); limits signal rise/fall time degradation on PCB traces up to ~10 cm at 20 ns timing margin. |
Pinout & Package
Package: 32-pin 400-mil Plastic SOJ (PBG32), surface-mount, gull-wing leads, JEDEC MS-012AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K-word decoding; A16 enables 1 Mbit addressing range. |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit TTL-compatible data path; direction controlled by CS/OE/WE states per truth table. |
| CS | Chip Select | Active-low enable; device enters standby (ISB1 = 10 mA) when high above VHC (VCC – 0.2 V). |
| OE | Output Enable | Active-low; enables output drivers only when CS is low; tOE = 8 ns max ensures fast read gating. |
| WE | Write Enable | Active-low; initiates write cycle when CS low; controls data latching timing per tWP (15 ns min) and tDW (9 ns min). |
| VCC | Power Supply | 5 V ±10% supply; dual VCC pins (pins 24 & 32) reduce IR drop and improve noise immunity. |
| GND | Ground | Reference return; dual GND pins (pins 13 & 20) symmetrically placed per JEDEC center-power/GND layout. |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center-Power/GND Pinout | Reduces simultaneous switching noise by 30–40% vs. conventional SOJ layouts, improving signal integrity in dense industrial PCBs. |
| TTL-Compatible I/O | Eliminates need for level translators when interfacing with legacy microcontrollers (e.g., Intel 80C188, Motorola 68EC000) and FPGAs. |
| Two-Mode Standby Control | Supports both TTL-level (ISB = 40 mA) and CMOS-level (ISB1 = 10 mA) power-down, enabling adaptive power management in battery-backed systems. |
| No Refresh Required | Fully static design removes DRAM-style refresh circuitry, simplifying FPGA-based memory controllers and reducing firmware overhead. |
| Industrial Temperature Qualification | Guaranteed operation across –40°C to +85°C with full AC/DC specs, suitable for uncontrolled ambient deployments like railway signaling or outdoor HMI. |
Applications
| Industrial PLC Memory Buffer | Legacy Microcontroller Code Storage |
|---|---|
Use Scenario: Storing real-time I/O mapping tables and motion control trajectory data in programmable logic controllers operating in factory-floor environments. IC Role / Device Role / Timing Role: Non-refreshing, byte-accessible SRAM providing deterministic 20 ns read/write latency for cyclic scan execution. Use Value: Eliminates refresh-induced jitter in 10 ms control loops; dual VCC/GND pins suppress noise coupling from adjacent 24 V solenoid drivers. | Use Scenario: Hosting boot code and runtime variables for 8-bit/16-bit microcontrollers (e.g., Zilog Z8, NEC V30) in medical diagnostic equipment. IC Role / Device Role / Timing Role: Primary program/data memory mapped directly to CPU address space with no wait-state insertion. Use Value: TTL-compatible I/O avoids level-shifter BOM cost; industrial temp rating ensures reliability during sterilization-cycle thermal cycling. |
| Automotive Engine Control Unit Cache | Test Equipment Pattern Memory |
Use Scenario: Holding calibration lookup tables and sensor fusion intermediate results in engine control units deployed in under-hood compartments. IC Role / Device Role / Timing Role: High-reliability SRAM buffer interfaced via dedicated memory bus of automotive-grade MCUs (e.g., Infineon TC1797). Use Value: –40°C to +85°C operation meets AEC-Q100 Grade 2 requirements; low ISB1 current extends battery life during key-off monitoring. | Use Scenario: Storing digital stimulus/response patterns in automated test equipment for semiconductor wafer probing. IC Role / Device Role / Timing Role: High-speed pattern store synchronized to tester clock; accessed in burst mode with 20 ns cycle repeatability. Use Value: Matched tRC/tAA ensures zero-wait-state operation at 50 MHz effective bandwidth; SOJ-32 footprint allows direct replacement of legacy SRAMs in aging tester platforms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-45ZSXIT | 45 ns access time, 3.3 V supply, TSOP-32 package; lower speed, different voltage domain. | Requires level translation and redesign for 5 V systems; unsuitable for legacy 5 V controller interfaces. | Select only if migrating to 3.3 V architecture and relaxing timing constraints. |
| AS6C1008-20TIN | 20 ns access, 5 V supply, SOJ-32 package; identical speed/temp/package but higher ISB (25 mA vs. 10 mA ISB1). | Higher standby current limits use in battery-backed or thermally constrained enclosures. | Acceptable drop-in where ISB1 < 15 mA is not required; verify thermal derating at +85°C. |
Compared with CY62128EV30LL-45ZSXIT, IDT71124S20YI delivers 2.25× faster access and native 5 V compatibility; versus AS6C1008-20TIN, it achieves 60% lower deep-standby current-critical for always-on industrial nodes.
Availability
IDT71124S20YI is available at Aetrix Electronics and suitable for industrial PLCs, legacy microcontroller systems, automotive ECUs, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IDT71124S20YI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
IDT71124S20YI belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for deterministic, no-refresh memory interfacing in 5 V industrial and automotive control systems.
FAQ
What is the maximum operating temperature range for IDT71124S20YI?
IDT71124S20YI is rated for industrial temperature operation from –40°C to +85°C. This specification is guaranteed across all DC and AC electrical parameters, including access time (tAA ≤ 20 ns), cycle time (tRC ≤ 20 ns), and standby current (ISB1 ≤ 10 mA). The device uses Renesas' qualified industrial process and undergoes temperature-cycled testing per JESD22-A108.
Does IDT71124S20YI require a refresh clock or external timing circuitry?
No, IDT71124S20YI is a fully static RAM and requires no refresh clock or external timing signals. Its internal circuitry maintains data indefinitely as long as VCC is applied and CS is asserted low during active use. This eliminates refresh-related interrupt latency and simplifies integration with microcontrollers lacking DRAM controllers.
What is the meaning of "center power/GND" pinout in IDT71124S20YI?
The center power/GND pinout places VCC and GND pins symmetrically near the middle of the 32-pin SOJ package (pins 24 & 32 for VCC; pins 13 & 20 for GND). This layout minimizes ground bounce and supply noise during high-speed I/O transitions, improving signal integrity in electrically noisy industrial environments where IDT71124S20YI is commonly deployed.
Can IDT71124S20YI be used with 3.3 V microcontrollers?
IDT71124S20YI operates exclusively from a 4.5–5.5 V supply and features TTL-compatible inputs (VIH = 2.2 V min, VIL = 0.8 V max). While its inputs accept 3.3 V logic HIGH, its outputs swing to 5 V levels. Direct connection to 3.3 V-only I/O ports risks overvoltage damage unless level-shifting or series termination is implemented-IDT71124S20YI is intended for 5 V system integration.
What is the difference between ISB and ISB1 current specifications for IDT71124S20YI?
IDT71124S20YI specifies two standby currents: ISB = 40 mA (TTL-level deselection, CS > VIH) and ISB1 = 10 mA (CMOS-level deselection, CS > VHC ≈ VCC – 0.2 V). ISB1 enables deeper power savings when the host controller can drive CS to near-VCC, making IDT71124S20YI suitable for low-power hold modes in battery-buffered industrial memory applications.
IDT71124S20YI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOJ
IDT71124S20YI FAQ
1.How can I place an order for IDT71124S20YI through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71124S20YI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71124S20YI reliable?
The price and inventory of IDT71124S20YI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71124S20YI is usually 5 days.
3.What payment methods are accepted for IDT71124S20YI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71124S20YI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71124S20YI?
IDT71124S20YI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71124S20YI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71124S20YI?
For technical support, including IDT71124S20YI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71124S20YI requirements.
6.How does Aetrix verify that IDT71124S20YI is sourced from the original manufacturer or authorized distributors?
All IDT71124S20YI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71124S20YI meets industry standards.
7.What is the process for return or replacement of IDT71124S20YI?
All IDT71124S20YI units undergo pre-shipment inspection (PSI). If there is an issue with IDT71124S20YI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71124S20YI part is unused and in its original packaging.
Return procedure for IDT71124S20YI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71124S20YI Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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