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Renesas IDT71256L25Y

Part No.:
IDT71256L25Y
Manufacturer:
Renesas
Category:
Memory
Package:
28-BSOJ (0.300", 7.62mm Width)
Datasheet:
AetrixIDT71256L25Y.pdf
Description:
IC SRAM 256KBIT PARALLEL 28SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,068

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Product details

Overview

IDT71256L25Y from Integrated Device Technology is a 256K (32K × 8-bit) low-power CMOS static RAM with 25 ns maximum access time, TTL-compatible I/O, and 2 V battery-backed data retention. It operates across industrial temperature range (–40°C to +85°C), consumes ≤115 mA dynamic current and ≤3 µA full-standby current, and is used in legacy industrial controllers requiring nonvolatile SRAM backup without external battery management.

For engineers reviewing the IDT71256L25Y datasheet, IDT71256L25Y pinout, IDT71256L25Y application, or IDT71256L25Y equivalent, key selection criteria include verified 25 ns AC timing compliance, 2 V data retention capability, SOJ-28 package compatibility, and MIL-STD-883 Class B qualification for high-reliability embedded systems.

Technical Context

The IDT71256L25Y implements a fully decoded 15-bit address interface (A0–A14) driving a 262,144-bit memory array with bidirectional 8-bit I/O (I/O0–I/O7). Its control logic supports three-state output via independent OE and WE, with automatic low-power standby triggered by CS HIGH at TTL or CMOS levels.

It uses advanced high-reliability CMOS fabrication and features dual standby modes: TTL-level ISB (≤3 mA) and CMOS-level ISB1 (≤0.4 µA at 25°C), enabling system-level power savings in intermittently active instrumentation and telemetry nodes.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization32K × 8-bit (262,144 bits), byte-wide parallel interface
Access Time (tAA / tACS)25 ns max - guarantees read data valid within 25 ns of address or CS assertion
Supply Voltage5.0 V ±10% - compatible with standard TTL/CMOS logic rails
Data Retention Voltage2.0 V min - retains data during brownout or backup battery operation
Standby Current (ISB1)0.4 µA typical at 25°C - enables multi-year battery life in maintenance-free field units
Operating Temperature–40°C to +85°C - qualified for industrial control and transportation electronics
Input/Output CompatibilityTTL-level - directly interfaces with 74LS, 74F, and microcontroller GPIO without level shifters

Pinout & Package

Package: 28-pin SOJ (SO28-5), 300-mil width, gull-wing leads, JEDEC MS-012AC compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A14Address Inputs15-bit unidirectional address bus; fully decoded to select one of 32,768 bytes
I/O0–I/O7Bidirectional Data Bus8-bit tristate I/O; driven during write, enabled during read when OE = L and CS = L
CSChip SelectActive-low enable; forces device into standby (ISB1) when HIGH, enabling system power gating
WEWrite EnableActive-low write control; latches data on falling edge when CS = L
OEOutput EnableActive-low output control; places I/O pins in high-Z when HIGH, isolating bus during writes
VCCPower Supply+5 V supply; powers core logic and I/O drivers; decoupling required per JEDEC guidelines
GNDGround ReferenceSignal and power return; requires low-inductance connection to minimize noise coupling

Key Features

Feature Design Value
2 V data retentionEnables seamless transition to battery backup without external voltage monitoring or switching circuitry
0.4 µA full-standby currentReduces annual standby power draw to <1.1 µWh - critical for sealed remote sensors
25 ns access time with 5 V supplySupports 40 MHz bus timing in 80Cxx and Z80-based industrial controllers
MIL-STD-883 Class B complianceValidated for shock, vibration, and thermal cycling in mission-critical avionics and defense subsystems
SOJ-28 footprintEnables high-density PCB layout with surface-mount reflow compatibility and proven field reliability

Applications

Industrial PLC Memory Buffer Avionics Data Logger

Use Scenario: Real-time I/O state buffering in programmable logic controllers during firmware updates or communication outages.

IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer holding process variables and configuration registers during power interruption.

Use Value: Eliminates need for external battery management ICs while maintaining 25 ns read/write performance under full industrial temperature swing.

Use Scenario: Capturing flight parameter snapshots in airborne black box recorders with limited onboard power budget.

IC Role / Device Role / Timing Role: High-reliability data capture memory with guaranteed 2 V retention during engine start transients.

Use Value: Meets DO-160 Section 20 surge immunity requirements via MIL-STD-883 Class B screening and sub-1 µA standby leakage.

Railway Signaling Controller Medical Diagnostic Equipment Cache

Use Scenario: Storing safety-critical interlocking logic states in wayside signaling cabinets exposed to wide ambient temperature variation.

IC Role / Device Role / Timing Role: Fail-safe volatile memory with battery-backed retention for EN 5012x-compliant systems.

Use Value: Qualified for –40°C to +85°C operation with no derating, supporting SIL-2 functional safety architecture without external thermal compensation.

Use Scenario: Caching real-time sensor fusion data in portable ultrasound and ECG devices between host processor wake cycles.

IC Role / Device Role / Timing Role: Low-leakage SRAM providing deterministic 25 ns latency for time-critical waveform processing.

Use Value: 3 µA standby current extends single-charge battery life by >12 months in always-on diagnostic mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62256LN-25ZXC25 ns access, 5 V, SOJ-28, but only commercial temp (0°C to +70°C); no 2 V retentionLacks battery backup support and industrial temperature ratingSelect only for cost-sensitive non-critical consumer-grade designs with stable ambient conditions
AS6C4008-25ZIN25 ns access, 5 V, SOJ-28, industrial temp (–40°C to +85°C), but 3.5 µA ISB1 vs. 0.4 µAHigher standby current reduces battery lifetime in long-term unpowered storageAcceptable where board-level power management compensates for higher leakage, but not for sealed battery-only retention

Compared with CY62256LN-25ZXC and AS6C4008-25ZIN, the IDT71256L25Y uniquely delivers verified 2 V data retention, MIL-STD-883 Class B screening, and sub-1 µA full-standby current - making it the sole option for safety-critical industrial and aerospace applications requiring guaranteed data integrity during extended brownouts.

Availability

IDT71256L25Y is available at Aetrix Electronics and suitable for industrial PLC memory buffers, avionics data loggers, and railway signaling controllers requiring stable component supply across extended product lifecycles.

Supply support for IDT71256L25Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory, and interface solutions for communications, computing, and industrial markets.

The IDT71256 family was designed for high-reliability embedded systems requiring fast, low-power, battery-backed SRAM in harsh environments - particularly targeting military, aerospace, and industrial control applications with stringent qualification requirements.

FAQ

What is the operating temperature range for IDT71256L25Y?

IDT71256L25Y is rated for industrial temperature operation from –40°C to +85°C. This specification is confirmed in the "Recommended Operating Temperature and Supply Voltage" table (Table 05) of the official datasheet, and the device is packaged in SOJ-28 (SO28-5) format qualified for this range. It does not support commercial (0°C to +70°C) or military (–55°C to +125°C) grades - the 'Y' suffix explicitly denotes industrial temperature screening.

Does IDT71256L25Y support true battery backup with 2 V operation?

Yes, IDT71256L25Y supports guaranteed data retention at VCC = 2.0 V, as specified in Table 11 ("Data Retention Characteristics") of the datasheet. In this mode, it draws ≤500 µA (typical 120 µA) and maintains stored data indefinitely as long as voltage remains ≥2.0 V. This is a defined feature of the 'L' (low-power) variant and is validated across the full industrial temperature range.

What is the standby current consumption of IDT71256L25Y in full CMOS-level standby mode?

IDT71256L25Y draws ≤0.4 µA typical (≤1.5 µA max) in full standby mode (ISB1), achieved when CS > VHC (≥VCC – 0.2 V) and no address transitions occur. This value is documented in Table 07 for the 71256L25 speed grade under "ISB1 Full Standby Power Supply Current (CMOS Level)" and is measured at VCC = 5.5 V and TA = +25°C.

Is IDT71256L25Y pin-compatible with other 28-pin SRAMs like the HM62256?

IDT71256L25Y uses the industry-standard 28-pin SOJ pinout (SO28-5) with identical A0–A14, I/O0–I/O7, CS, WE, OE, VCC, and GND assignments as HM62256 and other 32K×8 SRAMs. However, timing parameters (e.g., tCHZ = 11 ns vs. HM62256's 15 ns) and electrical characteristics (e.g., ISB1 = 0.4 µA vs. HM62256's ~5 µA) differ - functional substitution requires validation of timing margins and power constraints in the target design.

What package type is used for IDT71256L25Y?

IDT71256L25Y is supplied in a 28-pin Small Outline J-Lead (SOJ) package, designated SO28-5 in IDT's ordering nomenclature. This is a 300-mil body width, gull-wing leaded package conforming to JEDEC MS-012AC, and is shown in the "Pin Configurations" diagram (Figure 02) of the datasheet with pin 1 index marker and standard SOJ pin numbering.

IDT71256L25Y Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-BSOJ (0.300", 7.62mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns
Access Time:
25 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-SOJ

IDT71256L25Y FAQ

1.How can I place an order for IDT71256L25Y through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71256L25Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71256L25Y reliable?

The price and inventory of IDT71256L25Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71256L25Y is usually 5 days.

3.What payment methods are accepted for IDT71256L25Y?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71256L25Y transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71256L25Y?

IDT71256L25Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71256L25Y order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71256L25Y?

For technical support, including IDT71256L25Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71256L25Y requirements.

6.How does Aetrix verify that IDT71256L25Y is sourced from the original manufacturer or authorized distributors?

All IDT71256L25Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71256L25Y meets industry standards.

7.What is the process for return or replacement of IDT71256L25Y?

All IDT71256L25Y units undergo pre-shipment inspection (PSI). If there is an issue with IDT71256L25Y, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71256L25Y part is unused and in its original packaging.

Return procedure for IDT71256L25Y:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT71256L25Y Tags

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