Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas IDT71256L25YI

Part No.:
IDT71256L25YI
Manufacturer:
Renesas
Category:
Memory
Package:
28-BSOJ (0.300", 7.62mm Width)
Datasheet:
AetrixIDT71256L25YI.pdf
Description:
IC SRAM 256KBIT PARALLEL 28SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,119

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IDT71256L25YI from Integrated Device Technology is a 256K-bit (32K × 8) low-power CMOS static RAM with 25 ns maximum access time, TTL-compatible I/O, and 2 V battery backup data retention. It operates across –40°C to +85°C industrial temperature range, consumes ≤3 mA standby current (ISB1), and supports full standby mode via CMOS-level chip select. Used in legacy industrial controllers requiring non-volatile SRAM hold during power loss.

For engineers reviewing the IDT71256L25YI datasheet, IDT71256L25YI pinout, IDT71256L25YI application, or IDT71256L25YI equivalent, key selection criteria include industrial-temperature operation, 25 ns read cycle time, 2 V data retention capability, low-power standby current under 3 µA, and compatibility with 28-pin SOJ packaging for space-constrained embedded designs.

Technical Context

The IDT71256L25YI implements a fully decoded 15-bit address interface (A0–A14) driving a 32K × 8 memory array using high-reliability CMOS technology. Its control logic supports independent chip select (CS), output enable (OE), and write enable (WE) with three distinct operational states: active read/write, TTL-level standby (ISB), and CMOS-level full standby (ISB1).

Timing behavior is defined by strict AC parameters including tRC = 25 ns (read cycle), tAA = 25 ns (address access), and tCHZ = 11 ns (chip deselect to high-Z). Data retention at 2 V is guaranteed over the full industrial temperature range (–40°C to +85°C), with ICCDR ≤ 120 µA typical at 3.0 V and ≤ 800 µA max at 2.0 V.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 32K × 8-bit (262,144 bits), byte-wide parallel interface
Access Time (tAA) 25 ns max - determines minimum clock-to-data latency in synchronous systems
Supply Voltage 5.0 V ±10% - compatible with standard TTL/CMOS logic rails
Standby Current (ISB1) ≤3 µA typical at VCC = 5 V, CS > VHC - enables ultra-low-power battery backup
Data Retention Voltage 2.0 V min - sustains stored data during main power loss without refresh
Operating Temperature –40°C to +85°C - qualified for industrial-grade environmental stress
Input/Output Compatibility TTL-compatible VIH/VIL thresholds - direct interfacing with 5 V microcontrollers and FPGAs

Pinout & Package

Package: 28-pin SOJ (SO28-5), 300 mil width, gull-wing lead form, JEDEC MS-012 compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A14 Address Inputs 15-bit unidirectional address bus; fully decoded to select one of 32K locations
I/O0–I/O7 Bi-directional Data Bus 8-bit shared data path; high-impedance when CS or OE inactive
CS Chip Select Active-low enable; drives full standby (ISB1) when held above VHC (≈4.8 V)
WE Write Enable Active-low control for write cycles; disables outputs during write when OE = L
OE Output Enable Active-low control for read data assertion; allows output tri-state independent of CS
VCC Power Supply +5 V ±10% main supply; powers core and I/O circuits
GND Ground Reference 0 V return path for all internal and I/O currents

Key Features

Feature Design Value
2 V data retention Preserves memory contents during brownout or main power failure using backup battery
Full standby mode (ISB1) Reduces current to ≤3 µA when CS held at CMOS-high, enabling multi-year battery life
TTL-compatible I/O Eliminates level-shifting circuitry when interfacing with legacy 5 V microprocessors and peripherals
Industrial temperature range Validated operation from –40°C to +85°C supports deployment in harsh factory and outdoor environments
25 ns access time Enables integration into 40 MHz bus systems with zero wait states for critical real-time buffers

Applications

Industrial PLC Data Buffer Military Avionics Configuration Store

Use Scenario: Stores real-time I/O status and configuration registers in programmable logic controllers during mains interruption.

IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical state data with automatic 2 V retention fallback.

Use Value: Prevents loss of machine state during brief AC outages; eliminates need for external EEPROM write cycles.

Use Scenario: Holds flight-critical configuration tables in airborne mission computers where power cycling is frequent.

IC Role / Device Role / Timing Role: Industrial-qualified SRAM providing deterministic 25 ns read access and guaranteed data hold at 2 V.

Use Value: Reduces boot-time initialization delay by retaining last-known valid configuration without reflash.

Telecom Line Card Packet Buffer Medical Imaging System Frame Cache

Use Scenario: Temporarily stores packet headers and metadata in carrier-grade DSLAM line cards operating continuously at elevated ambient temperatures.

IC Role / Device Role / Timing Role: Low-power 32K × 8 SRAM with <3 µA ISB1 current, supporting thermal management in dense chassis.

Use Value: Enables fanless design in NEBS-compliant telecom equipment by minimizing standby heat generation.

Use Scenario: Caches intermediate image frames in portable ultrasound devices powered by rechargeable Li-ion batteries.

IC Role / Device Role / Timing Role: Battery-backed SRAM delivering 25 ns access while drawing <120 µA during 2 V retention mode.

Use Value: Extends battery runtime between charges by reducing active and standby power versus DRAM-based alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62256LL-25ZSXIT Same 32K × 8 organization, 25 ns speed, but uses 28-pin TSOP-I package; ISB1 = 1 µA typical at 2 V Requires PCB layout change due to different footprint and solder profile; better suited for high-density SMT assembly Select when board space is constrained and reflow compatibility with modern assembly lines is required
AS6C4008-25ZIN 25 ns access, 32K × 8, 28-pin SOJ package identical to IDT71256L25YI; ISB1 = 2 µA typical, VDR = 2.2 V min Pins 1–28 match exactly; no layout change needed; supports same industrial temperature range Preferred drop-in alternative with lower standby current and marginally higher retention voltage

Compared with IDT71256L25YI, CY62256LL-25ZSXIT offers superior standby efficiency but demands PCB redesign, whereas AS6C4008-25ZIN provides true pin-and-function compatibility with improved ISB1 and VDR specs-making it the most seamless replacement for continuity-driven industrial upgrades.

Availability

IDT71256L25YI is available at Aetrix Electronics and suitable for industrial PLCs, avionics subsystems, and medical imaging equipment requiring stable component supply across extended product lifecycles.

Supply support for IDT71256L25YI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in timing, memory, and interface solutions before its acquisition by Renesas Electronics in 2019.

IDT71256L25YI belongs to the IDT71256 family of high-reliability CMOS SRAMs designed specifically for industrial and military applications demanding long-term data retention, wide temperature operation, and low-power standby modes.

FAQ

What is the guaranteed data retention voltage for IDT71256L25YI?

IDT71256L25YI guarantees data retention down to 2.0 V across its full industrial temperature range (–40°C to +85°C), with typical retention current (ICCDR) of 120 µA at 3.0 V and up to 800 µA maximum at 2.0 V. This enables reliable battery backup operation using standard 2-cell alkaline or lithium primary cells without regulation.

Does IDT71256L25YI support true CMOS-level standby mode?

Yes, IDT71256L25YI supports full standby mode (ISB1) when chip select (CS) is driven above VHC (VCC – 0.2 V, ≈4.8 V at 5 V supply), reducing supply current to ≤3 µA typical. This is distinct from TTL-level standby (ISB), which draws ≤3 mA and requires CS > VIH only.

Which package type does IDT71256L25YI use, and is it RoHS-compliant?

IDT71256L25YI uses a 28-pin SOJ (SO28-5) package with 300 mil width and gull-wing leads. As a February 2001 product, it predates RoHS enforcement and contains leaded solder terminations; however, Aetrix Electronics provides full material declarations and can source RoHS-compliant equivalents upon request.

Can IDT71256L25YI be used in place of IDT71256S25YI?

IDT71256L25YI replaces IDT71256S25YI in low-power applications: both share identical speed (25 ns), pinout, and organization, but the 'L' version reduces ISB1 from 20 mA (S-version) to ≤3 µA and adds 2 V data retention. No PCB changes are needed, though system firmware must manage the lower standby current path.

What is the maximum operating frequency supported by IDT71256L25YI?

IDT71256L25YI supports a maximum read cycle frequency of 40 MHz, derived from its 25 ns read cycle time (tRC). This allows direct interfacing with microcontrollers and ASICs running at 40 MHz bus clocks without wait states, provided address and control setup/hold times are met per AC specifications.

IDT71256L25YI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-BSOJ (0.300", 7.62mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns
Access Time:
25 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-SOJ

IDT71256L25YI FAQ

1.How can I place an order for IDT71256L25YI through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71256L25YI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71256L25YI reliable?

The price and inventory of IDT71256L25YI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71256L25YI is usually 5 days.

3.What payment methods are accepted for IDT71256L25YI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71256L25YI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71256L25YI?

IDT71256L25YI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71256L25YI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71256L25YI?

For technical support, including IDT71256L25YI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71256L25YI requirements.

6.How does Aetrix verify that IDT71256L25YI is sourced from the original manufacturer or authorized distributors?

All IDT71256L25YI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71256L25YI meets industry standards.

7.What is the process for return or replacement of IDT71256L25YI?

All IDT71256L25YI units undergo pre-shipment inspection (PSI). If there is an issue with IDT71256L25YI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71256L25YI part is unused and in its original packaging.

Return procedure for IDT71256L25YI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT71256L25YI Tags

  • IDT71256L25YI
  • IDT71256L25YI PDF
  • IDT71256L25YI Datasheet
  • IDT71256L25YI Specifications
  • IDT71256L25YI Images
  • Renesas
  • Renesas IDT71256L25YI
  • Buy IDT71256L25YI
  • IDT71256L25YI Price
  • IDT71256L25YI Distributor
  • IDT71256L25YI Supplier
  • IDT71256L25YI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER